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1. 发明申请

WO2005116614A1 CAPILLARY MULTI-CHANNEL OPTICAL FLOW CELL 审中-公开
标题翻译：毛细管多通道光学细胞
公开(公告)号：WO2005116614A1
公开(公告)日：2005-12-08
申请号：PCT/US2005/012083
申请日：2005-04-08
申请人： NANOSTREAM, INC. , HOBBS, Steven, E.
发明人： HOBBS, Steven, E.
IPC分类号： G01N21/05
CPC分类号： G01N21/05 , G01N30/74 , G01N2021/0346 , G01N2021/056 , G01N2030/746 , G01N30/466
摘要： A first multi-channel optical flow cell (10, 100, 200, 540) includes a two end blocks (14, 114, 214, 16, 116, 216) disposed around a channel-defining flow layer (12, 112, 212, 292, 400, 410, 420, 430, 440, 450, 1212, 2212), with a first end block (14, 114, 214) having multiple inlet ports (20A-20X, 120X, 220A-220X) each containing an associated optical fiber (26A-26X, 126X, 535A-535X) and fluid conduit (24A-24X, 124X, 528A-528X) terminated substantially flush against an inner surface (40, 140) of the first end block (14, 114, 214). The second end block (16, 116, 216) may have multiple outlet ports (22A-22X, 122X, 222A-222X) each containing at least one of an additional optical fiber (30A-30X, 130X, 537A-537X) and additional fluid conduit (28A-28X, 128X, 529A-529X). A method for fabricating a multi-channel flow cell (10, 100, 200, 540) includes inserting a first plurality of optical fibers (26A-26X, 126X, 535A-535X) and a first plurality of fluid conduits (24A-24X, 124X, 528A-528X) through a plurality of inlet ports (20A-20X, 120X, 220A-220X) defined in a first end block (14, 114, 214), sealing the optical fibers (26A-26X, 126X, 535A-535X) and conduits (24A-24X, 124X, 528A-528X), polishing the optical fibers (26A-26X, 126X, 535A-535X), and then positioning and joining a channel-defining flow layer (12, 112, 212, 292, 400, 410, 420, 430, 440, 450, 1212, 2212) between the first end block (14, 114, 214) and a second end block (16, 116, 216).
摘要翻译：第一多通道光学流通池（10,100,200,540）包括设置在通道限定流动层（12,112,212和216）周围的两个端部块（14,114,214,16，116,216）具有多个入口端口（20A-20X，120X，220A-220X）的第一端块（14,114,214），每个入口端口（20A-20X，120X，220A-220X）光纤（26A-26X，126X，535A-535X）和流体导管（24A-24X，124X，528A-528X）基本上与第一端块（14,114,214）的内表面（40,140）齐平）。第二端块（16,116,216）可以具有多个出口端口（22A-22X，122X，222A-222X），每个出口端口包含附加光纤（30A-30X，130X，537A-537X）中的至少一个和附加的流体导管（28A-28X，128X，529A-529X）。一种制造多通道流动池（10,100,200,540）的方法包括：将第一组多个光纤（26A-26X，126X，535A-535X）和第一组多个流体导管（24A-24X， 124A，528A-528X）通过限定在第一端块（14,114,214）中的多个入口端口（20A-20X，120X，220A-220X），将光纤（26A-26X，126X， 532X，535X）和导管（24A-24X，124X，528A-528X），抛光光纤（26A-26X，126X，535A-535X），然后定位和连接通道限定流动层（12,112,212，在第一端块（14,114,214）和第二端块（16,116,216）之间的第二端块（292,114,216）上。

2. 发明授权

US07893445B2 Solid state emitter package including red and blue emitters 有权
标题翻译：固态发射器封装
公开(公告)号：US07893445B2
公开(公告)日：2011-02-22
申请号：US12614553
申请日：2009-11-09
申请人： Antony Paul van de Ven , Gerald H. Negley
发明人： Antony Paul van de Ven , Gerald H. Negley
IPC分类号： H01L33/00
CPC分类号： H01L25/0753 , F21K9/00 , H01L23/49541 , H01L2224/48091 , H01L2224/48465 , H01L2224/48471 , H01L2924/00014 , H01L2924/12032 , H01L2924/00 , H01L2224/4554
摘要： A solid state emitter package includes a principally red solid state emitter having peak emissions within 590 nm to 680 nm, a principally blue solid state emitter having peak emissions within 400 nm to 480 nm, and at least one of a common leadframe, common substrate, and common reflector, with the package being devoid of any principally green solid state emitters having peak emissions between 510 nm and 575 nm. A solid state emitter package may include at least one electrically conductive path associated with the solid state emitter package that is not in electrical communication with any solid state emitter of the solid state emitter package, with such electrically conductive path being susceptible to inclusion of a jumper or a control element.
摘要翻译：固态发射器封装包括主要为红色固体发射体，其具有在590nm至680nm内的峰值发射，主要具有在400nm至480nm内具有峰值发射的蓝色固体发射体，以及共同引线框架，公共衬底，和公共反射器，其中封装没有任何主要为绿色固体发射体，其具有510nm和575nm之间的峰值发射。固态发射器封装可以包括与固态发射极封装相关联的至少一个导电路径，其不与固态发射极封装的任何固态发射极电连通，这种导电路径易于包含跳线或控制元件。

3. 发明授权

US07857880B2 Semiconductor manufacturing facility utilizing exhaust recirculation 有权
标题翻译：利用排气再循环的半导体制造设备
公开(公告)号：US07857880B2
公开(公告)日：2010-12-28
申请号：US12364800
申请日：2009-02-03
申请人： W. Karl Olander , Joseph D. Sweeney , Luping Wang
发明人： W. Karl Olander , Joseph D. Sweeney , Luping Wang
IPC分类号： B01D46/00
CPC分类号： C23C14/48 , B01D53/74 , C23C14/564 , Y10S438/905 , Y10S438/909
摘要： A semiconductor manufacturing process facility requiring use therein of air exhaust for its operation, such facility including clean room and gray room components, with the clean room having at least one semiconductor manufacturing tool therein, and wherein air exhaust is flowed through a region of the clean room. The facility includes an air exhaust treatment apparatus arranged to (i) receive air exhaust after flow thereof through said region of said clean room, (ii) produce a treated air exhaust, and (iii) recirculate the treated air exhaust to an ambient air environment in the facility, e.g., to the gray room of the facility.
摘要翻译：一种半导体制造工艺设备，其中需要使用其中的排气用于其操作，这种设施包括洁净室和灰色房间部件，洁净室在其中具有至少一个半导体制造工具，并且其中排气流过干净的区域房间。该设施包括排气处理设备，其布置成（i）在其流过所述洁净室的所述区域之后接收排气，（ii）产生经处理的排气，以及（iii）将经处理的排气再循环到环境空气环境在设施中，例如，到设施的灰色房间。

4. 发明授权

US07838329B2 Antimony and germanium complexes useful for CVD/ALD of metal thin films 有权
标题翻译：用于金属薄膜的CVD / ALD的锑和锗络合物
公开(公告)号：US07838329B2
公开(公告)日：2010-11-23
申请号：US12307101
申请日：2007-05-12
申请人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Melissa A. Petruska , Matthias Stender , Philip S. H. Chen , Gregory T. Stauf , Bryan C. Hendrix
发明人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Melissa A. Petruska , Matthias Stender , Philip S. H. Chen , Gregory T. Stauf , Bryan C. Hendrix
IPC分类号： H01L21/06
CPC分类号： H01L45/1616 , C07C251/08 , C07F7/003 , C07F7/10 , C07F7/28 , C07F9/90 , C07F9/902 , C07F17/00 , C23C16/18 , C23C16/305 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
摘要： Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
摘要翻译：描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这些前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造方法。本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。

5. 发明授权

US07838073B2 Tantalum amide complexes for depositing tantalum-containing films, and method of making same 有权
标题翻译：用于沉积含钽膜的钽酰胺配合物及其制备方法
公开(公告)号：US07838073B2
公开(公告)日：2010-11-23
申请号：US12773650
申请日：2010-05-04
申请人： Tianniu Chen , Chongying Xu , Thomas H. Baum
发明人： Tianniu Chen , Chongying Xu , Thomas H. Baum
IPC分类号： C23C16/00 , C07F9/00
CPC分类号： C23C16/45553 , C07F9/005 , C23C16/18 , C23C16/34 , C23C16/40 , C23C16/405 , C23C16/45525 , H01L21/28556 , Y10T29/49117
摘要： Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films.
摘要翻译：钽前体可用于通过诸如化学气相沉积和原子层沉积的方法在衬底上沉积氮化钽或钽氧化物材料。这些前体可用于在具有铜金属化和/或铁电薄膜的微电子器件结构上形成钽基扩散阻挡层。

6. 发明授权

US07831032B2 System and method for the establishment of a connection between a contact requester and a communications center 有权
标题翻译：用于建立联系人请求者和通信中心之间的连接的系统和方法
公开(公告)号：US07831032B2
公开(公告)日：2010-11-09
申请号：US10549392
申请日：2004-03-12
申请人： Davide Antilli
发明人： Davide Antilli
IPC分类号： H04M3/00
CPC分类号： H04M3/51 , H04M3/42382 , H04M3/5231 , H04M2203/652
摘要： A system for establishing a connection between a contact requester (i.e. a potential customer) and a communications center is disclosed. The system has a message receiver which accepts a message from a communications device, such as a mobile telephone or a PDA, and a contact number. The contact number is usually the number of the mobile telephone or PDA. The system has furthermore a parser for parsing the message and identifying one or more identifiers in the message, including a destination identifier. The destination identifier indicates the number of a communications center, such as a call center, to which the message should be sent. A connector in the system uses the destination identifier and the contact number to establish a connection between a requested one of the communications centers and the contact requester.
摘要翻译：公开了一种用于在联系人请求者（即，潜在客户）和通信中心之间建立连接的系统。该系统具有接收来自诸如移动电话或PDA的通信设备的消息的消息接收器以及联系号码。联系电话通常是移动电话或PDA的号码。该系统还具有用于解析消息并识别消息中的一个或多个标识符的解析器，包括目的地标识符。目的地标识符表示应该发送消息的通信中心（例如呼叫中心）的号码。系统中的连接器使用目的地标识符和联系人号码建立所请求的一个通信中心和联系请求者之间的连接。

7. 发明授权

US07807461B2 Multipotent stem cells derived from human adipose tissue and cellular therapeutic agents comprising the same 有权
标题翻译：衍生自人类脂肪组织的多能干细胞和包含其的细胞治疗剂
公开(公告)号：US07807461B2
公开(公告)日：2010-10-05
申请号：US11313083
申请日：2005-12-20
申请人： Kyung Sun Kang , Jeong Chan Ra , Jung Ran Park
发明人： Kyung Sun Kang , Jeong Chan Ra , Jung Ran Park
IPC分类号： C12N5/071 , C12N5/00 , C12N5/02 , A01N1/00 , A01N1/02
CPC分类号： C12N5/0667 , C12N2500/14 , C12N2500/20 , C12N2500/32 , C12N2500/44 , C12N2500/84 , C12N2501/11 , C12N2501/115 , C12N2501/33 , C12N2501/39
摘要： This invention relates to human adipose tissue-derived multipotent adult stem cells. More particularly, the invention relates to human adipose tissue-derived multipotent stem cells, which can be maintained in an undifferentiated state for a long period of time by forming spheres and have high proliferation rates, as well as methods for isolating and maintaining the adult stem cells, and methods for differentiating the multipotent adult stem cells into nerve cells, fat cells, cartilage cells, osteogenic cells and insulin-releasing pancreatic beta-cells. Also, the invention relates to cellular therapeutic agents for treating osteoarthritis, osteoporosis and diabetes and for forming breast tissue, which contain the differentiated cells or the adult stem cells. Although the multipotent stem cells are adult stem cells, they have the ability to differentiate into osteogenic cells, nerve cells, astrocytes, fat cells, chrondrogenic cells or insulin-releasing pancreatic beta-cells, and so are effective in treating osteoporosis, osteoarthritis, nerve disease, diabetes, etc. Also, the stem cells form spheres in a serum-free medium containing CORM-2, and thus can be maintained in an undifferentiated state for a long period of time. Also, the stem cells have very high proliferation rates. Accordingly, the stem cells are useful as cellular therapeutic agents.
摘要翻译：本发明涉及人脂肪组织衍生的多潜能成体干细胞。更具体地说，本发明涉及人类脂肪组织衍生的多潜能干细胞，其可以通过形成球体并且具有高增殖率而长时间维持在未分化状态，以及分离和维持成体干细胞的方法细胞和用于将多能成体干细胞分化成神经细胞，脂肪细胞，软骨细胞，成骨细胞和胰岛素释放胰腺β-细胞的方法。此外，本发明涉及用于治疗骨关节炎，骨质疏松症和糖尿病以及形成含有分化细胞或成体干细胞的乳腺组织的细胞治疗剂。虽然多能干细胞是成体干细胞，但它们具有分化成成骨细胞，神经细胞，星形胶质细胞，脂肪细胞，成纤维细胞或胰岛素释放胰腺β-细胞的能力，因此有效治疗骨质疏松症，骨关节炎，神经疾病，糖尿病等。此外，干细胞在含有CORM-2的无血清培养基中形成球，因此可以长时间维持在未分化状态。此外，干细胞具有非常高的增殖率。因此，干细胞可用作细胞治疗剂。

8. 发明授权

US07798168B2 Pressure-based gas delivery system and method for reducing risks associated with storage and delivery of high pressure gases 有权
标题翻译：基于压力的气体输送系统和降低高压气体储存和输送相关风险的方法
公开(公告)号：US07798168B2
公开(公告)日：2010-09-21
申请号：US12615722
申请日：2009-11-10
申请人： W. Karl Olander , Matthew B. Donatucci , Luping Wang , Michael J. Wodjenski
发明人： W. Karl Olander , Matthew B. Donatucci , Luping Wang , Michael J. Wodjenski
IPC分类号： F16K3/36 , B08B9/027 , G05B11/01
CPC分类号： F17C13/04 , F17C5/00 , F17C2201/0109 , F17C2201/0119 , F17C2201/032 , F17C2201/056 , F17C2201/058 , F17C2205/0111 , F17C2205/0176 , F17C2205/0326 , F17C2205/0332 , F17C2205/0335 , F17C2205/0338 , F17C2205/0341 , F17C2205/0391 , F17C2205/0394 , F17C2221/012 , F17C2221/014 , F17C2221/016 , F17C2221/037 , F17C2221/05 , F17C2223/0123 , F17C2223/036 , F17C2225/0123 , F17C2225/033 , F17C2225/035 , F17C2225/038 , F17C2227/044 , F17C2227/045 , F17C2250/032 , F17C2250/043 , F17C2260/036 , F17C2260/044 , F17C2270/0518 , Y02E60/321 , Y10T137/0324 , Y10T137/0419 , Y10T137/2569 , Y10T137/4259 , Y10T137/7759 , Y10T137/7761 , Y10T137/7762 , Y10T137/7793 , Y10T137/8158 , Y10T137/87249
摘要： Apparatus and method for dispensing a gas using a gas source coupled in selective flow relationship with a gas manifold. The gas manifold includes flow circuitry for discharging gas to a gas-using zone, and the gas source includes a pressure-regulated gas source vessel containing the gas at superatmospheric pressure. The pressure-regulated gas source vessel can be arranged with a pressure regulator at or within the vessel and a flow control valve coupled in flow relationship to the vessel, so that gas dispensed from the vessel flows through the regulator prior to flow through the flow control valve, and into the gas manifold. The apparatus and method permit an enhancement of the safety of storage and dispensing of toxic or otherwise hazardous gases used in semiconductor processes.
摘要翻译：使用与气体歧管以选择性流动关系耦合的气体源分配气体的装置和方法。气体歧管包括用于将气体排放到气体使用区域的流动回路，并且气体源包括在超大气压下容纳气体的压力调节气体源容器。压力调节的气体源容器可以布置有在容器内或容器内的压力调节器，以及与容器流动关系的流量控制阀，使得从容器分配的气体在流过流量控制器之前流过调节器阀，并进入气体歧管。该装置和方法允许提高半导体工艺中使用的有毒或其他有害气体的储存和分配的安全性。

9. 发明授权

US07797911B2 Sterile, pyrogen-free, polymeric film-based heating bag 有权
标题翻译：无菌，无热原，聚合物膜基加热袋
公开(公告)号：US07797911B2
公开(公告)日：2010-09-21
申请号：US11594604
申请日：2006-11-08
申请人： Jean-Pascal Zambaux
发明人： Jean-Pascal Zambaux
IPC分类号： B65B55/02
CPC分类号： B32B27/08 , A61J1/10 , A61L2/26 , A61L2202/22 , A61M2207/00 , B29C65/08 , B29C65/18 , B29C66/1122 , B29C66/133 , B29C66/43 , B29C66/53262 , B29C66/71 , B29K2023/0683 , B29K2027/12 , B29K2027/16 , B29K2027/18 , B29K2071/00 , B29L2031/7148 , B31B70/00 , B31B70/642 , B31B70/844 , B31B2155/00 , B31B2155/002 , B31B2160/10 , B32B1/02 , B32B37/0076 , B32B2310/028 , B32B2439/46 , B65B55/022 , Y10T428/13 , Y10T428/1334 , Y10T428/3154 , Y10T428/31544 , B29K2079/00 , B29K2023/18
摘要： In one embodiment, there is provided a method for producing a sterilized and pyrogen-free bag for storing fluids. The method includes providing a bag comprised of polymeric film and heating the bag to at least approximately 253 degrees Celsius for at least approximately 30 minutes for sterilization and pyrogen removal. The polymeric film is a polymer selected from the group of poly(oxy-1,4-phenylene-oxy -1,4-phenylene-carbonyl-1,4-phenylene) (PEEK); polytetrafluoroethylene (PTFE); a perfluoroalkoxy (PFA) polymer; poly(tetrafluoroethylene-co-perfluoromethyl vinyl ether) (MFA); polyperfluoro(ethylene-co-propylene)(FEP); poly(ethylene-alt-chlorotrifluoroethylene) (ECTFE); poly(ethylene-co-tetrafluoroethylene) (ETFE); poly(vinylidene fluoride) (PDVF); tetrafluoroethylene-co-hexafluoropropylene-co-vinylidene fluoride terpolymer (THV); poly(bisphenol A-co-4-nitrophthalic anhydride-co-1,3-phenylenediamine) (PEI); poly(4-methyl-1-pentene) (PMP); and suitable mixtures thereof.
摘要翻译：在一个实施方案中，提供了一种用于生产用于储存流体的无菌和无热原的袋的方法。该方法包括提供由聚合物膜构成的袋并将袋加热到至少约253摄氏度至少约30分钟，用于灭菌和除热。聚合物膜是选自聚（氧基-1,4-亚苯基 - 氧基-1,4-亚苯基 - 羰基-1,4-亚苯基）（PEEK）的聚合物; 聚四氟乙烯（PTFE）; 全氟烷氧基（PFA）聚合物; 聚（四氟乙烯 - 共 - 全氟甲基乙烯基醚）（MFA）; （全氟（乙烯 - 共 - 丙烯）（FEP））; 聚（乙烯 - 高氯三氟乙烯）（ECTFE）; 聚（乙烯 - 共四氟乙烯）（ETFE）; 聚（偏二氟乙烯）（PDVF）; 四氟乙烯 - 共 - 六氟丙烯 - 共 - 偏二氟乙烯三元共聚物（THV）; 聚（双酚A-共-4-硝基邻苯二甲酸酐 - 共-1,3-苯二胺）（PEI）; 聚（4-甲基-1-戊烯）（PMP）; 及其合适的混合物。

10. 发明授权

US07750173B2 Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films 有权
标题翻译：具有螯合配体的钽酰氨基复合物，可用于TaN和Ta205薄膜的CVD和ALD
公开(公告)号：US07750173B2
公开(公告)日：2010-07-06
申请号：US12013433
申请日：2008-01-12
申请人： Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum
发明人： Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum
IPC分类号： C07F9/00 , C01G35/00
CPC分类号： C23C16/18 , C23C16/34 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Tantalum compounds of Formula I hereof are disclosed, having utility as precursors for forming tantalum-containing films such as barrier layers. The tantalum compounds of Formula I may be deposited by CVD or ALD for forming semiconductor device structures including a dielectric layer, a barrier layer on the dielectric layer, and a copper metallization on the barrier layer, wherein the barrier layer includes a Ta-containing layer and sufficient carbon so that the Ta-containing layer is amorphous. According to one embodiment, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including the tantalum compound of Formula I hereof at a temperature below about 400° C. in a reducing or inert atmosphere, e.g., a gas or plasma optionally containing a reducing agent.
摘要翻译：公开了式I的钽化合物，其用作形成含钽膜如阻挡层的前体。可以通过CVD或ALD沉积式I的钽化合物以形成包括电介质层，电介质层上的阻挡层和阻挡层上的铜金属化的半导体器件结构，其中阻挡层包括含Ta层和足够的碳，使得含Ta层是无定形的。根据一个实施例，半导体器件结构通过CVD或ALD从包含式I的钽化合物的前体在低于约400℃的还原或惰性的沉积中制备气氛，例如任选地含有还原剂的气体或等离子体。

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