专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP0317122A3 A static random access memory 失效
标题翻译：静态随机存取存储器
公开(公告)号：EP0317122A3
公开(公告)日：1990-11-14
申请号：EP88310293.1
申请日：1988-11-02
申请人： International Business Machines Corporation
发明人： Mao, Robert Shu
IPC分类号： G11C8/00 , G11C11/40
CPC分类号： G11C7/12 , G11C8/10 , G11C8/18
摘要： A static random access memory includes an array of memory cells (MC) connected to a pair of bit lines (eg, BL1, BL1 ). Selection of a memory cell is performed by decoding an address using a dynamic address decoder (8,9). The bit lines and the decoder are restored to respective predetermined voltage levels. Restoration of the dynamic decoder is performed during the sensing of memory data; and restoration of the bit lines is performed before or during address decoding.
摘要翻译：静态随机存取存储器包括连接到一对位线（例如BL1，BL1）的存储器单元阵列（MC）。通过使用动态地址解码器对地址进行解码来执行存储单元的选择（8,9）。位线和解码器恢复到相应的预定电压电平。在存储器数据的感测期间执行动态解码器的恢复; 并且在地址解码之前或期间执行位线的恢复。

2. 发明公开

EP0317122A2 A static random access memory 失效
标题翻译：统计员RAM-Speicher。
公开(公告)号：EP0317122A2
公开(公告)日：1989-05-24
申请号：EP88310293.1
申请日：1988-11-02
申请人： International Business Machines Corporation
发明人： Mao, Robert Shu
IPC分类号： G11C8/00 , G11C11/40
CPC分类号： G11C7/12 , G11C8/10 , G11C8/18
摘要： A static random access memory includes an array of memory cells (MC) connected to a pair of bit lines (eg, BL1, BL1 ). Selection of a memory cell is performed by decoding an address using a dynamic address decoder (8,9). The bit lines and the decoder are restored to respective predetermined voltage levels. Restoration of the dynamic decoder is performed during the sensing of memory data; and restoration of the bit lines is performed before or during address decoding.
摘要翻译：静态随机存取存储器包括连接到一对位线（例如BL1，BL1）的存储器单元阵列（MC）。通过使用动态地址解码器对地址进行解码来执行存储单元的选择（8,9）。位线和解码器恢复到相应的预定电压电平。在存储器数据的感测期间执行动态解码器的恢复; 并且在地址解码之前或期间执行位线的恢复。

3. 发明公开

EP0220578A2 A photoresist composition and a process using that photoresist composition 失效
标题翻译： Photolackzusammensetzung und deren Verwendung。
公开(公告)号：EP0220578A2
公开(公告)日：1987-05-06
申请号：EP86114063.0
申请日：1986-10-10
申请人： International Business Machines Corporation
发明人： Hinsberg, William Dinan , Willson, Carlton Grant
IPC分类号： G03F7/02 , G03F7/08 , G03F7/10
CPC分类号： G03F7/095 , G03F7/008 , G03F7/0226
摘要： A photoresist composition comprising a matrix resin and two photoactive additives, one of which causes acceleration of dissolution upon irradiation and one of which causes deceleration of dissolution upon irradiation, the photoactive additives being such that the dissolution-accelerating additive is activated by at least one narrow bandwidth of radiation which does not activate the dissolution-decelerating additive. Self aligned multilayer or multi-level structures can be made by a process using that photoresist composition.
摘要翻译：一种光致抗蚀剂组合物，其包含基质树脂和两种光活性添加剂，其中之一导致照射时加速溶解，其中一种导致照射时溶解减慢，光活性添加剂使得溶解促进添加剂被至少一个窄的不激活溶解减速添加剂的辐射带宽。可以通过使用该光致抗蚀剂组合物的方法制备自对准多层或多层结构。

4. 发明公开

EP0202755A1 Double heterojunction field effect transistor data storage device 失效
标题翻译：电子邮件Doppelheteroübergangs-Feldeffekttramistor bestehendes Datenspeicherelement。
公开(公告)号：EP0202755A1
公开(公告)日：1986-11-26
申请号：EP86302730.6
申请日：1986-04-11
申请人： International Business Machines Corporation
发明人： Freeouf, John Lawrence , Jackson, Thomas Nelson , Kirchner, Peter Daniel
IPC分类号： H01L29/80 , H01L29/64
CPC分类号： H01L29/205 , H01L29/778 , H01L29/803
摘要： Reversible control of conduction in a band offset heterojunction field effect transistor device is achieved by .an asymmetric barrier (10) which can position a potential well across the Fermi level to produce conduction and away from the Fermi level for a non-conducting condition and to retain that position in the absence of a signal. The device can be a GaAs channel FET with a multilayer gate comprising, in order of proximity to the GaAs channel, a gate layer (3) of GaA1As, a charge storage layer (8) of GaAs, an asymmetric barrier layer (10) of GaA1As graded towards the GaAs storage layer and an ohmic adapting layer (13) of GaAs.
摘要翻译：带偏移异质结场效应晶体管器件中的导通的可逆控制是通过非对称势垒（10）来实现的，该不对称势垒（10）可将势阱定位在费米能级上以产生导通并远离费米能级用于非导通状态并保持那个位置在没有信号的情况下。所述器件可以是具有多层栅极的GaAs沟道FET，所述GaAs沟道FET包括依次接近GaAs沟道的GaAlAs的栅极层（3），GaAs的电荷存储层（8），不对称势垒层（10）， GaAlAs分级到GaAs存储层和GaAs的欧姆适配层（13）。

5. 发明公开

EP0179196A2 A method of forming a semiconductor device using a mask 失效
标题翻译： Verfahren zum Herstellen eines Halbleiterbauelementes mittels einer Maske。
公开(公告)号：EP0179196A2
公开(公告)日：1986-04-30
申请号：EP85107231.4
申请日：1985-06-13
申请人： International Business Machines Corporation
发明人： Fang, Frank Fu , Grossman, Bertrand M. , Hwang, Wei
IPC分类号： H01L21/00 , H01L21/28 , H01L21/265
CPC分类号： H01L29/66659 , H01L21/0337 , H01L21/26586 , H01L21/2815 , H01L29/42376 , H01L29/66545 , Y10S148/082
摘要： A semiconductor device, particularly an ultra-short gate MOSFET, is formed by depositing a mask (6) at a low angle with respect to a planar surface and then performing an angular conductivity conversion operation, such as ion implantation, so that the converted region extends (9) partially under the mask. The mask is then removed and a gate electrode (12) is deposited in its place, the gate being smaller than the channel length (11) from the source (7) to the point (9) where the conversion extended under the mask.
Straggle location change is accommodated by arranging that the mask has a dimension along a line parallel to the planar surface which is greater than the desired channel length.
摘要翻译：通过相对于平面表面以低角度沉积掩模（6）并且然后执行诸如离子注入的角度电导率转换操作来形成半导体器件，特别是超短栅极MOSFET，使得转换区域部分地在面罩下延伸（9）。然后去除掩模，并且在其位置沉积栅电极（12），栅极小于从源（7）到在掩模下延伸的转换点（9）的沟道长度（11）。通过布置掩模具有沿平行于平坦表面的线大于所需通道长度的尺寸来适应带状位置变化。

6. 发明公开

EP0165547A2 A method of forming a shallow doped region in a semiconductor substrate 失效
标题翻译：制造平面型掺杂区，一个在半导体衬底的方法。
公开(公告)号：EP0165547A2
公开(公告)日：1985-12-27
申请号：EP85107228.0
申请日：1985-06-13
申请人： International Business Machines Corporation
发明人： Rubloff, Gary Wayne , Wittmer, Marc Francis
IPC分类号： H01L21/28 , H01L21/225
CPC分类号： H01L21/2254 , H01L21/2257 , H01L21/28518
摘要： A shallow (not more than about 30nm deep) doped region (24) is formed in a semiconductor substrate (10) by depositing at least two overlayers (12,14) on the top surface of the semiconductor substrate, one (14) of the overlayers containing metal atoms. The overlayers are such that a metal compound is formed from the metal atoms in one (14) of the overlayers and atoms from another one (12) of the overlayers when the multilayered structure is annealed at a temperature less than 700°C. At least one (12) of the overlayers contains atoms to be introduced as a dopant into the substrate.
When the multilayer structure is annealed at a temperature less than 700°C the metal compound is formed and releases the atoms to be introduced into the substrate. This produces an interface (18) which moves towards the substrate and pushes the released atoms by the snowplow effect towards the substrate. The annealing is continued for a time sufficient to move the interface (18) to the top surface of the substrate to push the released atoms into the body of the substrate.
摘要翻译：浅（不超过约30nm深）掺杂区（24）在一个半导体基片（10）通过的所述半导体衬底的顶面，一个（14）上沉积的至少两个以上的层（12，14）而形成在含有金属原子的层。过层被检查没有金属化合物选自金属原子的过从过层当该多层结构是在温度低于700℃。在至少退火另一个（12）的层和原子形成一个（14）一个（12）的上方的层包含原子被引入作为掺杂剂进入衬底。当多层结构是在温度低于700℃下退火的金属化合物形成，并释放原子被引入到基材。这产生基片接口（18），朝向所述基板移动，并推动通过朝向所述扫雪机作用释放的原子。退火持续足够长的时间的界面（18）移动到衬底的顶表面，以释放的原子推入基板的主体中。

7. 发明公开

EP0136631A2 A process for forming a magnetic record member and a magnetic record member 失效
标题翻译：形成的磁记录介质和磁记录介质的方法。
公开(公告)号：EP0136631A2
公开(公告)日：1985-04-10
申请号：EP84111286.5
申请日：1984-09-21
申请人： International Business Machines Corporation
发明人： Eldridge, Jerome Michael , Homola, Andrew Marion
IPC分类号： G11B5/84 , G11B5/702 , G11B5/70
CPC分类号： G11B5/702 , G11B5/84
摘要： A hermetically encapsulated magnetic record member is produced by applying a liquid mixture containing one or more organometallic compounds, an organic solvent and magnetic particles to a thermally stable substrate, e.g. of silicon. The applied mixture is then heated to melt the glass in the organometallic compound so that upon cooling of the glass, the magnetic particles are encapsulated therein.

8. 发明公开

EP0131098A2 A translation/rotation positioning device 失效
标题翻译： Fortschreitendes Umdrehungspositionierungssystem。
公开(公告)号：EP0131098A2
公开(公告)日：1985-01-16
申请号：EP84104626.1
申请日：1984-04-25
申请人： International Business Machines Corporation
发明人： Schlotter, Nicholas Edward , Rabolt, John Francis
IPC分类号： G05B19/29
CPC分类号： G05B19/291
摘要： This is a device that enables one to control the translation and rotation of an element 15A, B relative to a light beam 38. The device has a rotatable member 12 having a plurality of position-identifying circumferentially spaced openings 14A, B, C, D therein as well as code aperture 16A, B, C for the transmission of a light beam. The rotatable member 12 is mounted on a rotating mounting 20 driven from a motor 26. The mounting 20 is carried by a housing 22 which can be translated by motor 34. The code apertures 16 are read by an optical head 18 and the positional information used in the control of motor 26.
摘要翻译：这是一种能够控制元件相对于光束的平移和旋转的装置。该装置具有可旋转构件，其中具有多个位置识别周向间隔的开口以及用于传输光束的孔。可旋转构件与平移装置和旋转装置相关联。在优选实施例中，可旋转构件由计算机远程控制。

9. 发明公开

EP0130496A1 Magnetic field sensing device 失效
标题翻译： Vorrichtung zum Nachweis magnetischer Felder。
公开(公告)号：EP0130496A1
公开(公告)日：1985-01-09
申请号：EP84107150.9
申请日：1984-06-22
申请人： International Business Machines Corporation
发明人： Aboaf, Joseph Adam , Klokholm, Erik , Mc Guire, Thomas Roche
IPC分类号： G01R33/06 , H01L43/08
CPC分类号： G11B5/3903 , H01L43/10
摘要： A magnetic field sensing device employs a magnetoresistive element which exhibits a negative Δp effect (Δp = p ∥-ρ┴) when a magnetic field is applied to it to magnetise it to saturation at room temperature. The electrical resistivity p┴ of the element in a direction perpendicular to the direction of current through the element is greater than the electrical resistivity p ∥ of the element in a direction parallel to the direction of the electrical current through the element. The magnetoresistive element is formed from a ferromagnetic material containing at least one of Ni; Fe and Co together with lr in an amount sufficient to cause the element to exhibit negative anisotropic magnetoresistance at room temperature.
摘要翻译：当磁场被施加到磁场以在室温下饱和时，磁场感测装置采用表现出负的DELTA rho效应（DELTA rho = rho ||-rho ORTHOGONAL）的磁阻元件。元件在与通过元件的电流方向垂直的方向上的电阻率ROH ORTHOGONAL大于电阻率rho || 的元件在平行于通过元件的电流的方向的方向上。磁阻元件由含有Ni中的至少一种的铁磁材料形成; Fe和Co与Ir的量足以使元素在室温下呈现负的各向异性磁阻。

10. 发明公开

EP0127838A2 Silicon sources suitable for use in molecular beam epitaxy deposition 失效
标题翻译： SiliciumquellefürMolekularstrahl-Epitaxieaufwachsen。
公开(公告)号：EP0127838A2
公开(公告)日：1984-12-12
申请号：EP84105836.5
申请日：1984-05-23
申请人： International Business Machines Corporation
发明人： Jackson, Thomas Nelson , Kirchner, Peter Daniel , Pettit, George David , Rosenberg, James Jordan , Woodall, Jerry MacPherson , Wright, Steven Lorenz
IPC分类号： C30B23/06 , C30B29/06
CPC分类号： C30B29/06 , C30B23/06 , Y10S148/169 , Y10T428/24314
摘要： A silicon source for molecular beam epitaxial deposition heated by electric current through the silicon is provided wherein the silicon is configured in a plurality of filaments positioned between two broader electrical contact areas.
The figures shows such a source comprising Z-shaped silicon filaments 15, 16, 17 integrated with and extending between electrical contact headers 18,19. A current source is connected in series with the source and causes resistance heating of the source.
摘要翻译：提供了通过电流通过硅加热的用于分子束外延沉积的硅源，其中硅被配置在位于两个更宽的电接触区域之间的多根细丝中。附图示出了这样的源，其包括与电接触集管18,19之间延伸的集成的Z形硅丝15,16,17。电流源与源串联连接并引起电阻加热资源。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式