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    • 3. 发明公开
    • PROCEDE DE DETERMINATION D'AU MOINS UN PARAMETRE DE COMPORTEMENT VISUEL D'UN INDIVIDU
    • 方法确定至少一个个体的视觉行为的参数
    • EP3145386A1
    • 2017-03-29
    • EP15726239.5
    • 2015-05-19
    • Essilor International (Compagnie Générale d'Optique)
    • BONNIN, ThierryESCALIER, GuilhemHADDADI, Ahmed
    • A61B3/00A61B3/113A61B3/14G02C13/00
    • G02C13/005A61B3/113A61B3/14
    • The invention relates to a method of determining at least one parameter of visual behaviour of an individual, comprising the following steps: - determination of the position of the centre of rotation (CRO) of at least one eye (OD) of the individual in a first reference frame (01, X1, Y1, Z1) tied to the head (TS) of the individual, - capture, with the aid of an image capture device, of at least one image of at least one part of the body of the individual in a second reference frame, determination of the position and the orientation, in the second reference frame, of the first reference frame tied to the head of the individual, by searching for the position, in the second reference frame of a distinctive zone of the said part of the body of the individual, - determination of the position of the centre of rotation of the eye in the second reference frame, - determination of the sought-after visual behaviour parameter.
    • 公开的是确定性的采矿的方法的至少一个个体的视觉行为的参数,包括:确定所述个体的至少一个眼睛的旋转中绑在人的头部的第一参考帧中的中心的位置的; 捕获,与图像捕获装置的第二参考帧的帮助下,个体的身体的至少一部分的至少一个图像的,确定的位置和取向的,在第二参考帧,其中第 参考帧依赖于个人的头,通过搜索在个体的身体的所述部分的一个独特的区域的所述第二参考帧中的位置; 判定在第二参考帧中的眼睛的转动中心的位置; 和判定所寻求的视觉行为参数。
    • 4. 发明公开
    • METHOD FOR FORMING POLYSILICON
    • 形成多晶硅的方法
    • EP3097578A1
    • 2016-11-30
    • EP15702681.6
    • 2015-01-22
    • Laser Systems & Solutions of Europe
    • MAZZAMUTO, Fulvio
    • H01L21/20
    • H01L21/02675H01L21/02422H01L21/02532H01L21/02592H01L21/02691
    • The present invention is directed to a method for forming polysilicon on a semiconductor substrate comprising providing amorphous silicon on a semiconductor substrate, exposing at least an area of the amorphous silicon to a first laser beam and a second laser beam, characterized in that during exposing the area to the second laser beam no displacement of the laser beam relative to the area occurs. In addition, the present invention is directed to the use of such method for producing large grain polysilicon. In particular, the present invention is directed to the use of such method for producing vertical grain polysilicon. Further, the present invention is directed to the use of such method for producing sensors, MEMS, NEMS, Non Volatile Memory, Volatile memory, NAND Flash, DRAM, Poly Si contacts and interconnects.
    • 本发明涉及一种在半导体衬底上形成多晶硅的方法,包括在半导体衬底上提供非晶硅,将非晶硅的至少一个区域暴露于第一激光束和第二激光束,其特征在于,在暴露 区域到第二激光束不发生激光束相对于该区域的位移。 此外,本发明涉及这种方法用于制造大晶粒多晶硅的用途。 具体地说,本发明涉及这种方法用于制造垂直晶粒多晶硅的用途。 此外,本发明针对使用这种方法来生产传感器,MEMS,NEMS,非易失性存储器,易失性存储器,NAND闪存,DRAM,多晶硅触点和互连。