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    • 4. 发明申请
    • TELLURIUM PRECURSORS FOR GST FILM DEPOSITION
    • 用于消费税薄膜沉积的铜矾石前驱物
    • WO2009039187A1
    • 2009-03-26
    • PCT/US2008/076698
    • 2008-09-17
    • L'AIR LIQUIDE - SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDEDUSSARRAT, Christian
    • DUSSARRAT, Christian
    • C23C16/18C23C16/455C23C16/30H01L45/00
    • C23C16/305C23C16/45553H01L45/06H01L45/144H01L45/1616
    • A process for depositing a tellurium-containing film on a substrate is disclosed, including (a) providing a substrate in a reactor; (b) introducing into the reactor at least one tellurium-containing precursor having the formula TeL n or cyclic LTe( L ) 2 1TeL, wherein at least one L contains a N bonded to one said Te, "n" is between 2-6, inclusive, and each "L," is independently selected from certain alkyl and aryl groups. The process further includes (c) optionally, introducing at least one M-containing source, wherein M is Si, Ge, Sb, Sn, Pb, Bi, In, Ag or Se, or a combination of any of those; (d) optionally, introducing a hydrogen-containing fluid; (e) optionally, introducing an oxygen-containing fluid; (f) optionally, introducing a nitrogen-containing fluid; (g) reacting the precursor(s) and M-containing source(s), if any, in the reactor with the hydrogen-, oxygen- and/or nitrogen-containing fluid, if any; and (h) depositing a tellurium-containing film onto the substrate.
    • 公开了一种在基材上沉积含碲膜的方法,包括(a)在反应器中提供基材; (b)向反应器中引入具有式TeLn或环状LTe(L)21TeL的至少一种含碲前体,其中至少一个L含有与一个所述Te结合的N,“n”在2-6之间,包括 ,并且每个“L”独立地选自某些烷基和芳基。 该方法还包括(c)任选引入至少一种含M的源,其中M是Si,Ge,Sb,Sn,Pb,Bi,In,Ag或Se,或其中任何一种的组合; (d)任选地,引入含氢流体; (e)任选地,引入含氧流体; (f)任选地,引入含氮流体; (g)使反应器中的前体和含M源(如果有的话)与氢,氧和/或含氮流体(如果有的话)反应; 和(h)在基底上沉积含碲膜。