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    • 1. 发明授权
    • Ferromagnetic memory based on torroidal elements
    • 基于环形元件的铁磁记忆
    • US5923583A
    • 1999-07-13
    • US956405
    • 1997-10-23
    • Richard Womack
    • Richard Womack
    • G11C11/15G11C11/16G11C13/00
    • G11C11/15G11C11/16
    • A magnetic memory cell for storing binary encoded data and a memory constructed from these memory cells. The memory cell stores information in the direction of magnetization of a torroidal layer of magnetic material. The memory cell is constructed from a structure having a top electrode, a soft layer which includes a planar sheet of a soft magnetic material, a hard layer which includes a planar sheet of a hard magnetic material, and a bottom electrode, the soft and hard layers being sandwiched between the top and bottom electrodes. The various layers are torroids. The hard and soft materials are chosen such that the magnitude to the magnetic field needed to magnetize the hard magnetic material is greater than the magnitude of the magnetic field needed to magnetize the soft magnetic material. The memory cell also includes a write circuit that generates first and second magnetic fields. The first is generated by passing a current between the top and bottom electrodes of a memory cell in a direction that determines the data state to be written. The magnitudes of the first and second magnetic fields are less than that needed to magnetize the soft magnetic material. However, the magnitude of the vector sum of the first and second magnetic fields is greater than the magnetic field needed to magnetize the soft magnetic material but less than the magnetic field needed to magnetize the hard magnetic material.
    • 用于存储二进制编码数据的磁存储单元和由这些存储单元构成的存储器。 存储单元存储磁性材料的环形层的磁化方向的信息。 存储单元由具有顶部电极,软层的软层构成,该软层包括软磁性材料的平面片,包括硬磁性材料的平板的硬质层和底部电极,软和硬 层被夹在顶部和底部电极之间。 各层是电筒。 选择硬和软材料使得磁化磁性材料所需的磁场的大小大于磁化磁性材料所需的磁场的大小。 存储单元还包括产生第一和第二磁场的写入电路。 第一种是通过在确定要写入的数据状态的方向上通过存储器单元的顶部和底部电极之间的电流来产生的。 第一和第二磁场的大小小于磁化软磁材料所需的大小。 然而,第一和第二磁场的矢量和的大小大于磁化磁性材料但是小于磁化磁性材料所需的磁场所需的磁场。