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1. 发明专利

JP2014039025A Led type photolithography illuminator having high light collection efficiency 有权
标题翻译：具有高光收集效率的LED型光刻机
公开(公告)号：JP2014039025A
公开(公告)日：2014-02-27
申请号：JP2013155291
申请日：2013-07-26
申请人： Ultratech Inc , ウルトラテックインク
发明人： DAVID G STITES , HAWRYLUK M ANDREW
IPC分类号： H01L21/027 , G03F7/20 , H01L33/00
CPC分类号： G03F7/201 , G03F7/70391 , H01L25/0753 , H01L33/642 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an LED type photolithography illuminator having high light collection efficiency.SOLUTION: A plurality of LEDs are used as an illuminator 10. Each LED has an LED die and a heat sink. The LED die is imaged on the input end 452 of a homogenizer rod 450, and covers the input end substantially without including the non-light-emitting heat sink portion of the LED. A microlens group 414 is used for imaging the LED die. Light collection efficiency of the illuminator is better than 50%, and illumination homogeneity at the output end of a light homogenizer is in the range of ±2%.
摘要翻译：要解决的问题：提供具有高采光效率的LED型光刻照明器。解决方案：多个LED用作照明器10.每个LED具有LED管芯和散热器。 LED芯片成像在均质器450的输入端452上，并且基本上不包括LED的非发光散热器部分覆盖输入端。微透镜组414用于对LED管芯进行成像。照明器的采光效率优于50％，光均质器输出端的照明均匀度在±2％的范围内。

2. 发明专利

JP2012133352A Photolithographic led fabrication using phase-shift mask 有权
标题翻译：使用相位移屏蔽的照相机LED制造
公开(公告)号：JP2012133352A
公开(公告)日：2012-07-12
申请号：JP2011265742
申请日：2011-12-05
申请人： Ultratech Inc , ウルトラテックインク
发明人： ANDREW M HAWRYLUK , ROBERT L HSIEH , WARREN W FLACK
IPC分类号： G03F7/20 , H01L33/22
CPC分类号： H01L33/22 , G03F1/26 , G03F7/70283 , G03F7/703 , H01L33/007 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a photolithographic method of forming a roughened surface for an LED to improve LED light emission efficiency.SOLUTION: The method includes photolithographically imaging a phase-shift mask pattern onto a photoresist layer of a substrate to form therein a periodic array of photoresist features. A roughened substrate surface is created by processing the exposed photoresist layer to form a periodic array of substrate posts in the substrate surface. A p-n junction multilayer structure is then formed atop the roughened substrate surface to form the LED. The periodic array of substrate posts serve as scatter sites that improve LED light emission efficiency as compared to the LED having no roughened substrate surface. The use of the phase-shift mask enables the use of affordable photolithographic imaging at a depth of focus suitable for non-flat LED substrates while also providing the needed resolution to form the substrate posts.
摘要翻译：要解决的问题：提供一种形成LED粗糙化表面以提高LED发光效率的光刻方法。解决方案：该方法包括将相移掩模图案光刻成像到基板的光致抗蚀剂层上，以在其中形成光致抗蚀剂特征的周期性阵列。通过处理暴露的光致抗蚀剂层以在衬底表面中形成周期性阵列的衬底柱而产生粗糙化的衬底表面。然后在粗糙化的基板表面上形成p-n结多层结构以形成LED。与没有粗糙化的衬底表面的LED相比，衬底柱的周期性阵列用作改善LED发光效率的散射点。使用相移掩模使得可以在适合于非平坦LED基板的聚焦深度下使用经济的光刻成像，同时还提供形成基板柱的所需分辨率。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2010109363A Thermal processing of substrate with pre- and post-spike temperature control 有权
标题翻译：具有前期和后期温度控制的基板的热处理
公开(公告)号：JP2010109363A
公开(公告)日：2010-05-13
申请号：JP2009231615
申请日：2009-10-05
申请人： Ultratech Inc , ウルトラテックインク
发明人： ZAFIROPOULO ARTHUR W , HAWRYLUK ANDREW M , MCWHIRTER JAMES T , ANIKITCHEV SERGUEI G
IPC分类号： H01L21/268 , H01L21/265
CPC分类号： B23K26/0608 , B23K26/073 , B23K26/082 , B23K26/083 , H01L21/268
摘要： PROBLEM TO BE SOLVED: To provide apparatuses and method for the thermal processing of a substrate surface, e.g., controlled laser thermal annealing (LTA) of substrates.
SOLUTION: The apparatus for the thermal processing of a substrate surface involves irradiating the substrate surface 32 with first and second images 150, 250 to process regions of the substrate surface 32 at a substantially uniform peak processing temperature along a scan path. The first image 150 may serve to effect spike annealing of the substrates while the second image 250 may be used to provide auxiliary heat treatment to the substrates before and/or after the spike annealing. Control over the temperature profile of the prespike and/or postspike may also reduce stresses and strains generated in the wafers 30.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供用于基板表面的热处理的设备和方法，例如基板的受控激光热退火（LTA）。解决方案：用于衬底表面的热处理的装置包括用第一和第二图像150,250照射衬底表面32，以沿着扫描路径以基本均匀的峰值处理温度处理衬底表面32的区域。第一图像150可以用于实现基板的尖峰退火，而第二图像250可以用于在尖峰退火之前和/或之后向基板提供辅助热处理。控制预压和/或后刺的温度分布也可以减少晶片30中产生的应力和应变。版权所有（C）2010，JPO和INPIT

4. 发明专利

JP2005244191A Laser scanning apparatus and method for thermal treatment 有权
标题翻译：激光扫描仪和热处理方法
公开(公告)号：JP2005244191A
公开(公告)日：2005-09-08
申请号：JP2005013256
申请日：2005-01-20
申请人： Ultratech Inc , ウルトラテックインク
发明人： TALWAR SOMIT , MARKLE DAVID A
IPC分类号： H01L21/268 , H01S3/00
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and methods for thermal treatment of a substrate with scanned laser radiation. SOLUTION: The apparatus for thermal treatment of a region of a substrate, comprising: a continuous radiation source capable of providing a continuous first radiation beam with a first intensity profile and a wavelength capable of heating the substrate region; an optical system adapted to receive the first radiation beam and forms a second radiation beam therefrom that forms an image on the substrate; a recycling optical system arranged as to return the radiation to the substrate; and a stage adapted to support the substrate, and a first radiation pulse from the optical system and a second radiation pulse from the recycling optical system are adapted to scan the substrate, with respect to the image so as to heat the region to a temperature which is sufficient to thermally treat the region. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用扫描激光辐射对衬底进行热处理的装置和方法。解决方案：用于热处理衬底区域的设备，包括：连续辐射源，其能够提供具有第一强度分布和能够加热衬底区域的波长的连续的第一辐射束; 光学系统，其适于接收所述第一辐射束并且从其形成第二辐射束，所述第二辐射束在所述衬底上形成图像; 布置成将辐射返回到基底的再循环光学系统; 以及适于支撑衬底的阶段，以及来自光学系统的第一辐射脉冲和来自再循环光学系统的第二辐射脉冲适于相对于图像扫描衬底，以便将该区域加热至足以热处理该地区。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2015042972A 高強度光線測定システム、及び方法有权
标题翻译：用于测量高强度光束的系统和方法
公开(公告)号：JP2015042972A
公开(公告)日：2015-03-05
申请号：JP2014141285
申请日：2014-07-09
申请人：ウルトラテックインク , Ultratech Inc , ウルトラテックインク
发明人： SERGUEI ANIKITCHEV , DAVID GAINES
IPC分类号： G01J1/02 , G01J1/04
CPC分类号： G01J1/0407 , G01J1/0414 , G01J1/0477 , G01J1/4257 , G01J2001/0481 , G01J2001/4261 , G02B5/04 , G02B27/108
摘要：【課題】高強度光線の少なくとも一つの強度特性を測定するためのシステムおよび方法を提供する。【解決手段】二つの透明板に挟まれた薄膜プリズムであって、幅d、および、面積を有する全内部反射(TIR)表面を有する薄膜プリズムを含むプリズム組立体に光線を導くことと、前記光線の一部を前記TIR表面によって積分球へ反射しつつ、前記光線の残りの部分を、前記2つの透明板を通して光線集積部へ導くことと、前記積分球によって捕捉された光線の一部を検出することと、該検出された光線から光線の強度特性を決定することと、を備える。【選択図】図1A
摘要翻译：要解决的问题：提供用于测量光束的至少一个强度特性的系统和方法。解决方案：该方法包括：将光束引导到棱镜组件中，该棱镜组件包括夹在两个透明板之间的薄棱镜，并且具有全内反射（TIR）表面具有宽度d和面积; 将光束的一部分反射到积分球，同时将光束的剩余部分通过上述两个透明板传输到光束转台; 检测由积分球捕获的光束的一部分; 以及从所检测的光束确定光束的强度特性。

6. 发明专利

JP2014123719A Wynn-dyson imaging system reducing thermal deformation 有权
标题翻译： WYNN-DYSON成像系统减少热变形
公开(公告)号：JP2014123719A
公开(公告)日：2014-07-03
申请号：JP2013239824
申请日：2013-11-20
申请人： Ultratech Inc , ウルトラテックインク
发明人： HAWRYLUK M ANDREW
IPC分类号： H01L21/027 , G02B5/04 , G02B17/08 , G03F7/20
CPC分类号： G03F7/2002 , G03F7/70191
摘要： PROBLEM TO BE SOLVED: To provide a Wynn-Dyson imaging system reducing thermal deformation.SOLUTION: A reticle prism and a wafer prism are made of a glass material having a thermal expansion coefficient of about 100 ppb/°C or less. A Wynn-Dyson imaging system comprises: a first window arranged between a reticle 16 and a reticle prism 110R; and a second window arranged between a wafer 18 and a wafer prism, and maintaining symmetry of an image. The first window substantially blocks arrival of convective heat and radiation heat at the reticle prism, thus reducing the amount of thermally-induced image deformation of a reticle image formed on the wafer.
摘要翻译：要解决的问题：提供一种降低热变形的Wynn-Dyson成像系统。解决方案：光栅棱镜和晶片棱镜由热膨胀系数为约100ppb /℃以下的玻璃材料制成。 Wynn-Dyson成像系统包括：布置在标线片16和标线棱镜110R之间的第一窗口; 以及布置在晶片18和晶片棱镜之间并保持图像的对称性的第二窗口。第一个窗口基本上阻挡了在标尺棱镜处的对流热和辐射热的到达，从而减少了在晶片上形成的标线片图像的热诱导图像变形的量。

7. 发明专利

JP2013038417A FAST ANNEALING FOR GaN LED 审中-公开
标题翻译： GaN LED快速退火
公开(公告)号：JP2013038417A
公开(公告)日：2013-02-21
申请号：JP2012161560
申请日：2012-07-20
申请人： Ultratech Inc , ウルトラテックインク
发明人： WANG YUN , HAWRYLUK M ANDREW
IPC分类号： H01L33/32 , H01L21/26 , H01L21/268
摘要： PROBLEM TO BE SOLVED: To provide a method of forming GaN light-emitting diodes which realizes enhanced output power, lower starting voltage, and reduced series resistance.SOLUTION: A method of forming GaN light-emitting diodes includes forming a GaN multilayer structure having an n-GaN layer 40 and a p-GaN layer 50 between which an active layer 60 is interposed. The method also includes performing fast annealing of the p-GaN layer 50 using either a laser or a flash lamp. The method further includes forming a transparent conductive layer 70 on the GaN multilayer structure, and adding a p-contact 90p to the transparent conductive layer 70 and an n-contact 90n to the n-GaN layer 40.
摘要翻译：要解决的问题：提供一种形成GaN发光二极管的方法，其实现增强的输出功率，较低的起始电压和降低的串联电阻。解决方案：一种形成GaN发光二极管的方法包括形成具有n-GaN层40和p-GaN层50的GaN多层结构，其间介于有源层60之间。该方法还包括使用激光或闪光灯对p-GaN层50进行快速退火。该方法还包括在GaN多层结构上形成透明导电层70，并将p接触90p加到n-GaN层40上的透明导电层70和n型接触90n。版权所有：（C ）2013，JPO＆INPIT

8. 发明专利

JP2010249837A Light-measuring method for surface 审中-公开
标题翻译：表面光学测量方法
公开(公告)号：JP2010249837A
公开(公告)日：2010-11-04
申请号：JP2010143268
申请日：2010-06-24
申请人： Ultratech Inc , ウルトラテックインク
发明人： ROSAKIS ARES J , OWEN DAVID , GLEDDEN STEPHEN , OLSON SEAN
IPC分类号： G01B11/26 , G01B9/02 , G01B11/24 , G01B11/30 , G01J9/02 , G01N21/956
CPC分类号： G01B9/02098 , G01B9/0201 , G01B11/2441 , G01B2290/35 , G01J9/0215
摘要： PROBLEM TO BE SOLVED: To acquire a whole-region optical measured value of a surface, such as, the surface of a flat panel, a wafer, and the patterned surface of a substrate. SOLUTION: A surface 130 to be measured is irradiated with an optical probe beam 112 having a uniform wave front, and a reflected probe beam 132, having a reflected wave front with distortions caused by the surface 130 is faced to a light-sharing interferometer device 101 to acquire an optical interference pattern. Then, the phase shift between the reflected wave front and a replica of the reflected wave front is adjusted, and another interference pattern is acquired. The interference pattern is processed, and information on surface inclination is acquired over the entire region of irradiation location on the surface 130 to be measured. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：获取诸如平板的表面，晶片和基板的图案化表面的表面的全区域光学测量值。解决方案：用具有均匀波前的光学探针光束112照射要测量的表面130，具有由表面130引起的失真的反射波前面的反射探针光束132面对发光元件，共享干涉仪装置101以获得光学干涉图案。然后，调整反射波前面与反射波前面的副本之间的相移，获得另一干涉图案。处理干涉图案，并且在要测量的表面130上的照射位置的整个区域上获取关于表面倾斜度的信息。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2006156916A Chuck for laser heat treatment having heat compensation heater module 有权
标题翻译：用于具有热补偿加热器模块的激光热处理
公开(公告)号：JP2006156916A
公开(公告)日：2006-06-15
申请号：JP2004362777
申请日：2004-12-15
申请人： Ultratech Inc , ウルトラテックインク
发明人： SHAREEF IQBAL A , LANDAU IGOR , MARKLE DAVID A , TALWAR SOMIT , THOMPSON MICHAEL O , ANGELOV IVELIN A , ZHOU SENQUAN
IPC分类号： H01L21/268 , H01L21/683
CPC分类号： H01L21/67109 , B23K26/10 , B23K26/702 , B23K26/703 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a chucking method and a chuck for supporting a semiconductor substrate and sustaining it at a substantially constant background temperature even when a spatially or temporally varying thermal load is applied. SOLUTION: The chuck comprises a heating element, a wick, and a heat compensation heater module having an enclosed chamber containing alkaline metal liquid/vapor. The chamber makes temperature difference of the module uniform by using heating pipe principle. A spatially varying thermal load is made uniform quickly by thermal conductivity of the heater module. A significant temporary variation in thermal load is allowed by radiating a predetermined quantity of heat from below the heater module. Predetermined heat loss is preferably equalized at least with maximum variation in thermal load being supplied within a range smaller than the heat being lost through radiation and convection. Consequently, heat is required to be supplied through an electric heating element and temperature of the chuck and substrate can be controlled. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：即使在施加空间或时间变化的热负荷时，提供用于支撑半导体衬底并在基本上恒定的背景温度下保持其的夹持方法和卡盘。解决方案：卡盘包括加热元件，芯和热补偿加热器模块，其具有包含碱金属液体/蒸气的封闭室。该室通过采用加热管原理使模块的温差均匀。通过加热器模块的热导率，使空间变化的热负荷快速均匀。通过从加热器模块的下方辐射预定量的热量来允许热负荷的显着的暂时变化。优选地，预定的热损失至少在热负荷的最大变化在比通过辐射和对流损失的热量小的范围内被均衡。因此，需要通过电加热元件供给热量，并且能够控制卡盘和基板的温度。版权所有（C）2006，JPO＆NCIPI

10. 发明公开

KR20180065945A 워핑된 웨이퍼를 고정하는 수축 가능한 밀봉 장치를 갖는 웨이퍼 척 장치 审中-公开
公开(公告)号：KR20180065945A
公开(公告)日：2018-06-18
申请号：KR20170167550
申请日：2017-12-07
申请人： ULTRATECH INC
发明人： ELLIS RAYMOND , CRESPIN A J , HEINLE KONRAD , HU CHARLES
IPC分类号： H01L21/683 , H01L21/67
CPC分类号： H01L21/6838 , H01L21/67126 , H01L21/68735 , H01L21/68742 , H01L21/6875
摘要： 웨이퍼척 장치는본체와이 본체내에형성된진공라인시스템을포함한다. 웨이퍼척 장치는밀봉장치들을구비하며밀봉장치들각각은척의본체의상부면에형성된각각의리세스들내에작동가능하게배치된다. 각각의밀봉장치는연장된작동위치와수축된작동위치사이에서수축가능하다. 각각의밀봉장치의최상단부는웨이퍼의후면의대응하는부분과함께진공밀봉을형성한다. 밀봉장치들은통상의밀봉보다높이척의상부면위로연장하고웨이퍼를척의상부면까지아래로안내하며여기서웨이퍼는웨이퍼를척의상부면에척킹하는진공특징부들에의해맞물림될수 있다. 밀봉장치들은워핑된웨이퍼들을척킹하는데특히유용하다.

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