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    • 4. 发明申请
    • GALLIUM NITRIDE BULK CRYSTALS AND THEIR GROWTH METHOD
    • 氮化钾块状晶体及其生长方法
    • US20130022528A1
    • 2013-01-24
    • US13592750
    • 2012-08-23
    • Tadao HashimotoShuji Nakamura
    • Tadao HashimotoShuji Nakamura
    • C30B7/10C01B21/06
    • C30B29/406C30B7/10
    • A gallium nitride crystal with a polyhedron shape having exposed {10-10} m-planes and an exposed (000-1) N-polar c-plane, wherein a surface area of the exposed (000-1) N-polar c-plane is more than 10 mm2 and a total surface area of the exposed {10-10} m-planes is larger than half of the surface area of (000-1) N-polar c-plane. The GaN bulk crystals were grown by an ammonothermal method with a higher temperature and temperature difference than is used conventionally, using a high-pressure vessel with an upper region and a lower region. The temperature of the lower region is at or above 550° C., the temperature of the upper region is set at or above 500° C., and the temperature difference between the lower and upper regions is maintained at or above 30° C. GaN seed crystals having a longest dimension along the c-axis and exposed large area m-planes are used.
    • 具有暴露的{10-10} m面和暴露(000-1)N极c面的多面体形状的氮化镓晶体,其中暴露(000-1)N-极性c-面的表面积, 平面大于10平方毫米,暴露的{10-10} m面的总表面积大于(000-1)N极C面的表面积的一半。 通过使用具有上部区域和下部区域的高压容器,通过与常规使用的温度和温度差更高的氨热法生长GaN本体晶体。 下部区域的温度为550℃以上,上部区域的温度为500℃以上,下部和上部区域之间的温度差保持在30℃以上。 使用沿着c轴具有最长尺寸和暴露的大面积m面的GaN晶种。