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1. 发明专利

JP2007165852A Method and system for immersion lithography 有权
标题翻译：方法和系统的渗透层析
公开(公告)号：JP2007165852A
公开(公告)日：2007-06-28
申请号：JP2006280557
申请日：2006-10-13
申请人： Taiwan Semiconductor Manufacturing Co Ltd , 台湾セミコンダクターマニュファクチャリングカンパニーリミテッドTaiwan Semiconductor Manufacturing Co., Ltd.
发明人： CHANG CHING-YU , LIN CHIN-HSIANG , LIN BURN JENG , LU DING CHUNG
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F7/2041 , G03F7/70341 , G03F7/70941
摘要： PROBLEM TO BE SOLVED: To provide a method and a system for immersion lithography by which static electricity accumulated in an exposure step is effectively removed by using a conductive fluid as an immersion liquid. SOLUTION: This method for immersion lithography includes a step for preparing a substrate 110 coated with a resist layer 120, a step for charging a conductive immersion liquid 150 between the substrate 110 and an objective lens of a lithography system 100, and a step for irradiating the resist layer 120 by using a radiation energy through the objective lens and the conductive immersion liquid 150. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于浸没光刻的方法和系统，通过使用导电流体作为浸没液体，可以有效地去除曝光步骤中积聚的静电。解决方案：浸渍光刻方法包括制备涂覆有抗蚀剂层120的基板110的步骤，用于在基板110和光刻系统100的物镜之间填充导电浸没液体150的步骤，以及通过使用辐射能量通过物镜和导电浸渍液体150照射抗蚀剂层120的步骤。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2006310862A Thermoelectric heating and cooling apparatus for processing semiconductor 审中-公开
标题翻译：用于加工半导体的热电加热和冷却装置
公开(公告)号：JP2006310862A
公开(公告)日：2006-11-09
申请号：JP2006122732
申请日：2006-04-26
申请人： Taiwan Semiconductor Manufacturing Co Ltd , 台湾セミコンダクターマニュファクチャリングカンパニーリミテッドTaiwan Semiconductor Manufacturing Co., Ltd.
发明人： LIN YU-LIANG , LIN CHIN-HSIEN , CHIEN-RIN FAN
IPC分类号： H01L21/02
CPC分类号： H01L35/32 , H01L21/67109 , H01L35/325
摘要： PROBLEM TO BE SOLVED: To provide a thermoelectric wafer chuck which is applied to a semiconductor process for performing rapid, dynamic and multi-zone temperature control with respect to a wafer.
SOLUTION: A thermoelectric wafer chuck 22 includes a chuck base and a wafer support surface. Fluid channels extend through the wafer base for distribution of a cooling or a heating liquid. A thermoelectric module is provided in thermal contact with the wafer support surface. The thermoelectric wafer chuck is capable of heating a wafer, based on the wafer support surface as the thermoelectric module 22 converts electrical energy into thermal energy in accordance to the Peltier effect. The wafer is cooled by a reverse flow of current through the thermoelectric module, by making a cooling medium distribute through the cooling channels, or both of these methods.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种应用于半导体工艺的热电晶片卡盘，用于对晶片执行快速，动态和多区域温度控制。解决方案：热电晶片卡盘22包括卡盘基座和晶片支撑表面。流体通道延伸穿过晶片底座以分配冷却或加热液体。提供与晶片支撑表面热接触的热电模块。热电晶片卡盘能够基于晶片支撑表面加热晶片，因为热电模块22根据珀耳帖效应将电能转换成热能。通过使冷却介质分配通过冷却通道，或者这两种方法，通过热电模块的反向流动来冷却晶片。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2007102180A Immersion lithography that prevents occurrence of water mark 审中-公开
标题翻译：防止水标记发生的倾斜图
公开(公告)号：JP2007102180A
公开(公告)日：2007-04-19
申请号：JP2006186926
申请日：2006-07-06
申请人： Taiwan Semiconductor Manufacturing Co Ltd , 台湾セミコンダクターマニュファクチャリングカンパニーリミテッドTaiwan Semiconductor Manufacturing Co., Ltd.
发明人： CHANG CHING-YU
IPC分类号： G03F7/004 , G03F7/039 , G03F7/38 , H01L21/027
CPC分类号： G03F7/2041 , G03F7/004 , G03F7/0045 , G03F7/0392
摘要： PROBLEM TO BE SOLVED: To provide a resist material for use in immersion lithography that prevents or reduces damage due to water mark defects and an immersion lithography method. SOLUTION: The resist material includes a polymer that turns soluble in an alkaline solution after reaction with acid, a PAG that decomposes to form acid after absorption of radiation energy, and a quencher capable of neutralizing acid and having a reduced mobility, wherein the quencher has a concentration in the resist higher than 0.5 wt.%. The immersion lithography method includes: a step of forming a resist on a substrate; a step of exposing the resist in a fluid in an immersion lithography system; a step of baking the resist so that the amount of the fluid that diffuses the quencher in the resist in immersion lithography is confined to 5×10 -13 mol/cm 2 ; and a step of developing the exposed resist. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供用于浸没式光刻中的抗蚀剂材料，其防止或减少由于水痕缺陷引起的损伤和浸没式光刻方法。抗蚀剂材料包括在与酸反应后变成可溶于碱性溶液的聚合物，在吸收辐射能后分解形成酸的PAG和能够中和酸并具有降低的迁移率的猝灭剂，其中猝灭剂的抗蚀剂浓度高于0.5重量％。浸渍光刻方法包括：在基板上形成抗蚀剂的步骤; 在浸没式光刻系统中将流体中的抗蚀剂曝光的步骤; 将抗蚀剂烘烤的步骤使得浸没式光刻中的抗蚀剂中的猝灭剂扩散的流体的量被限制为5×10 -6 / SP 2 mol / cm 2。以及显影抗蚀剂的步骤。版权所有（C）2007，JPO＆INPIT

4. 发明申请

WO2010020836A1 IMPEDANCE CONTROLLED ELECTRICAL INTERCONNECTION EMPLOYING META-MATERIALS 审中-公开
标题翻译：阻抗控制电气互连使用元素材料
公开(公告)号：WO2010020836A1
公开(公告)日：2010-02-25
申请号：PCT/IB2008/053390
申请日：2008-08-22
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD , WYLAND, Christopher
发明人： WYLAND, Christopher
IPC分类号： H01L23/66 , H01L23/538
CPC分类号： H01L23/5383 , H01L23/5226 , H01L23/5387 , H01L23/66 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/50 , H01L24/91 , H01L2223/6611 , H01L2223/6627 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4805 , H01L2224/48091 , H01L2224/48135 , H01L2224/48472 , H01L2224/48599 , H01L2224/48699 , H01L2224/49052 , H01L2224/49111 , H01L2224/49174 , H01L2224/49175 , H01L2224/73265 , H01L2224/85207 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2924/1903 , H01L2924/19032 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2924/3025 , H01P1/047 , H05K1/0243 , H05K2203/049 , H01L2924/00 , H01L2224/85399 , H01L2224/05599
摘要： A method of improving electrical interconnections between two electrical elements (510,550) is made available by providing a meta-material overlay (700) in conjunction with the electrical interconnection (530) The meta-material overlay is designed to make the electrical signal propagating via the electrical interconnection to act as though the permittivity and permeability of the dielectric medium within which the electrical interconnection is formed are different than the real component permittivity and permeability of the dielectric medium surrounding the electrical interconnection. In some instances the permittivity and permeability resulting from the meta-material cause the signal to propagate as if the permittivity and permeability have negative values. Accordingly the method provides for electrical interconnections possessing enhanced control and stability of impedance, reduced noise, and reduced loss. Alternative embodiments of the meta- material overlay provide, the enhancements for conventional discrete wire bonds whilst also facilitating single integrated designs compatible with tape implementation.
摘要翻译：通过提供与电互连（530）结合的超材料覆层（700），改善了改善两个电气元件（510,550）之间的电互连的方法。超材料覆层被设计成使电信号经由电互连用作形成电互连的电介质的介电常数和导磁率不同于围绕电互连的电介质的实分量介电常数和磁导率。在某些情况下，由超常材料产生的介电常数和磁导率会导致信号传播，就好像介电常数和磁导率具有负值一样。因此，该方法提供具有增强的阻抗的稳定性，降低的噪声和减少的损耗的电互连。元材料覆盖层的替代实施例提供了常规分立线接合的增强，同时还促进与磁带实现兼容的单一集成设计。

5. 发明专利

JP2013232647A Backside irradiation image sensor device integrated in lengthwise direction 审中-公开
标题翻译：以长度方向集成的后置辐射图像传感器装置
公开(公告)号：JP2013232647A
公开(公告)日：2013-11-14
申请号：JP2013094292
申请日：2013-04-26
申请人： Taiwan Semiconductor Manufacturing Co Ltd , 台湾積體電路製造股▲ふん▼有限公司Taiwan Semiconductor Manufacturing Company,Ltd.
发明人： WANG TZU-JUI , CHEN SZU-YING , RYU JINSEI , YAUNG DUN-NIAN , LIU PING-YIN , CHAO LAN-LIN
IPC分类号： H01L27/14 , H01L27/146 , H04N5/369
CPC分类号： H01L27/14683 , H01L27/14618 , H01L27/14634 , H01L27/1469 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a backside irradiation image sensor device integrated in the lengthwise direction.SOLUTION: A backside irradiation image sensor includes a photodiode and a first transistor located in a first chip and the first transistor is electrically coupled to the photodiode. Furthermore, the backside irradiation image sensor includes a second transistor formed in a second chip and a plurality of logic circuits formed in a third chip, the second chip is laminated with the first chip, and the third chip is laminated with the second chip. The logic circuit, the second transistor, and the first transistor are coupled to each other through a plurality of bonding pads and a penetration via.
摘要翻译：要解决的问题：提供在长度方向上集成的背面照射图像传感器装置。解决方案：背面照射图像传感器包括光电二极管和位于第一芯片中的第一晶体管，并且第一晶体管电耦合到光电二极管。此外，背面照射图像传感器包括形成在第二芯片中的第二晶体管和形成在第三芯片中的多个逻辑电路，第二芯片与第一芯片层压，并且第三芯片与第二芯片层叠。逻辑电路，第二晶体管和第一晶体管通过多个接合焊盘和穿透通孔相互耦合。

6. 发明专利

JP2013229606A Rear surface irradiation type semiconductor image sensor device containing electric charge layer charged to be negative 审中-公开
标题翻译：包含电荷层的后表面辐射型半导体图像传感器装置被充电
公开(公告)号：JP2013229606A
公开(公告)日：2013-11-07
申请号：JP2013092026
申请日：2013-04-25
申请人： Taiwan Semiconductor Manufacturing Co Ltd , 台湾積體電路製造股▲ふん▼有限公司Taiwan Semiconductor Manufacturing Company,Ltd.
发明人： TING SHYH FANN , LAI CHIH-YU , GO SEITATSU , TU YEUR-LUEN , WANG CHING-CHUN
IPC分类号： H01L27/146 , H04N5/369
CPC分类号： H01L27/146 , H01L27/1463 , H01L27/1464 , H01L27/14683
摘要： PROBLEM TO BE SOLVED: To provide a rear surface irradiation type semiconductor image sensor device containing an electric charge layer charged to be negative.SOLUTION: A semiconductor image sensor device containing a layer charged to be negative includes: a semiconductor substrate having a p-type region; a plurality of irradiation sensing regions positioned in the p-type region adjoining a front surface of the semiconductor substrate; and a layer charged to be negative which is close to the p-type region adjoining the radiation sensing region. The layer charged to be negative is a silicon oxide containing plenty of oxygen, metal oxide of high dielectric constant, or silicon nitride. The layer charged to be negative is a liner in shallow trench isolation, sidewall spacer or off-set spacer of a transistor gate, salicide block layer, buffer layer under a salicide block layer, rear surface layer, or combination thereof.
摘要翻译：要解决的问题：提供一种包含充电为负电荷层的背面照射型半导体图像传感器装置。解决方案：包含被充电为负的层的半导体图像传感器装置包括：具有p型的半导体衬底地区; 位于与所述半导体衬底的前表面相邻的所述p型区域中的多个照射感测区域; 以及充电为负的层，其接近与辐射感测区域相邻的p型区域。被充电为负的层是含有大量氧的氧化硅，高介电常数的金属氧化物或氮化硅。充电为负的层是在浅沟槽隔离，侧壁间隔物或晶体管栅极的自组装间隔物，自对准硅化物阻挡层，在自对接硅化物阻挡层下的缓冲层，后表面层或其组合的衬垫。

7. 发明专利

JP2013157605A Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2013157605A
公开(公告)日：2013-08-15
申请号：JP2013016405
申请日：2013-01-31
申请人： Taiwan Semiconductor Manufacturing Co Ltd , 台湾積體電路製造股▲ふん▼有限公司Taiwan Semiconductor Manufacturing Company,Ltd.
发明人： JING JEAN SHIUH-KE , CHEN KEI-WEI , WANG YING-LANG
IPC分类号： H01L27/14 , H01L31/10
CPC分类号： H01L31/022441 , H01L27/14623 , H01L27/14629 , H01L27/1464 , H01L31/022433
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device composed of an improved reflectivity optical grid for image sensors and to provide a method of manufacturing the same.SOLUTION: A backside illuminated CIS device includes: a semiconductor substrate having a pixel array area including a plurality of photosensors formed on a front side surface of the semiconductor substrate, each of the photosensors forming a pixel in the pixel array area; an optical grid material disposed over a backside surface of the semiconductor substrate, patterned to form an optical grid that bounds each of the pixels in the pixel array area, and extending above the semiconductor substrate, the optical grid having sidewalls and a top portion; and a highly reflective coating formed over the optical grid, and including a pure metal coating of a metal that is at least 99% pure and a high-k material coating over the pure metal coating that has a refractive index of greater than about 2.0. Methods are also disclosed.
摘要翻译：要解决的问题：提供一种由图像传感器的改进的反射光栅组成的半导体器件，并提供其制造方法。解决方案：背面照明CIS器件包括：具有包括多个像素阵列区域的像素阵列区域的半导体衬底形成在所述半导体衬底的前侧表面上的光敏元件，每个所述光电传感器在所述像素阵列区域中形成像素; 设置在所述半导体衬底的背面上方的光栅格材料，被图案化以形成限定所述像素阵列区域中的每个像素并且在所述半导体衬底上方延伸的光栅，所述光栅具有侧壁和顶部; 以及形成在光栅上的高反射涂层，并且包括在纯金属涂层上具有至少99％纯度和高k材料涂层的纯金属涂层，其具有大于约2.0的折射率。还公开了方法。

8. 发明专利

JP2013141223A Gate voltage controlled oscillator and clock data regeneration circuit 有权
标题翻译：门电压控制振荡器和时钟数据再生电路
公开(公告)号：JP2013141223A
公开(公告)日：2013-07-18
申请号：JP2012278849
申请日：2012-12-21
申请人： Weltronics Component Ltd , 創意電子股▲ふん▼有限公司 , Taiwan Semiconductor Manufacturing Co Ltd , 台湾積體電路製造股▲ふん▼有限公司Taiwan Semiconductor Manufacturing Company,Ltd.
发明人： YU BAI XIN , ZHANG JIA XIANG , WANG DING HAO
IPC分类号： H04L7/02 , H03L7/00
CPC分类号： H03L7/00 , H03K3/0315 , H03K3/36 , H03L7/24
摘要： PROBLEM TO BE SOLVED: To provide a gate voltage controlled oscillator which can prevent unnecessary jitters without increasing a working current, and a clock data regeneration circuit.SOLUTION: In a gate voltage controlled oscillator, a gate signal is received and an oscillation signal having a frequency corresponding to the gate signal is output. The gate voltage controlled oscillator includes: a delay unit having a first and a second terminal, the delay unit delaying the oscillation signal received by the second terminal and outputting a delayed oscillation signal from the first terminal; and a multiplexer having a first and a second input terminal, a selection terminal, and an output terminal, with the first input terminal and the selection terminal supplied with the gate signal, the second input terminal connected to the first terminal of the delay unit, and the output terminal connected to the second terminal of the delay unit, the multiplexer receiving the delayed oscillation signal at the second input terminal, selecting a signal at the first or the second input terminal according to the gate signal, and outputting the selected signal as an oscillation signal from the output terminal.
摘要翻译：要解决的问题：提供一种能够在不增加工作电流的情况下防止不必要的抖动的栅极压控振荡器和时钟数据再生电路。解决方案：在栅极压控振荡器中，接收栅极信号，并且具有输出对应于门信号的频率。栅极压控振荡器包括：具有第一和第二端子的延迟单元，延迟单元延迟由第二端子接收的振荡信号，并从第一端子输出延迟的振荡信号; 以及具有第一和第二输入端子，选择端子和输出端子的多路复用器，其中第一输入端子和选择端子被提供门信号，第二输入端子连接到延迟单元的第一端子，并且所述输出端子连接到所述延迟单元的第二端子，所述多路复用器在所述第二输入端子处接收延迟的振荡信号，根据所述门信号在所述第一或第二输入端子处选择信号，并将所选择的信号输出为来自输出端子的振荡信号。

9. 发明专利

JP2013118007A Ldo regulator for integrated application 有权
标题翻译：用于集成应用的LDO调节器
公开(公告)号：JP2013118007A
公开(公告)日：2013-06-13
申请号：JP2013055043
申请日：2013-03-18
申请人： Taiwan Semiconductor Manufacturing Co Ltd , 台湾積體電路製造股▲ふん▼有限公司Taiwan Semiconductor Manufacturing Company,Ltd.
发明人： SOENEN ERIC , ROTH ALAN , SEKI SEKI , HSU YING-CHIH , WANG GUANG-CHENG , CHOU WEN-SHEN
IPC分类号： G05F1/56
CPC分类号： G05F1/575 , H02M3/07 , H02M2001/0045
摘要： PROBLEM TO BE SOLVED: To provide an efficient LDO regulator suitable to an integrated application for an electric power stage, an internal electric power source, etc., for different levels.SOLUTION: There is provided a regulator which includes: an amplifier applied so as to receive a reference voltage at a positive terminal; a master source follower configured to have a gate driven with the output of the amplifier and a source connected to a negative terminal of the amplifier; and at least one slave source follower having a gate shared with the gate of the master source follower and a source serving as an output of the regulator.

10. 发明专利

JP2013048094A Light source for lcd backlight display 有权
标题翻译： LCD背光显示器的光源
公开(公告)号：JP2013048094A
公开(公告)日：2013-03-07
申请号：JP2012194714
申请日：2012-09-05
申请人： Taiwan Semiconductor Manufacturing Co Ltd , 台湾積體電路製造股▲ふん▼有限公司Taiwan Semiconductor Manufacturing Company,Ltd.
发明人： CHUA JANET BEE YIN , LAU YUE HOONG
IPC分类号： F21S2/00 , F21Y101/02 , G02F1/13357
CPC分类号： G02B6/0043 , B82Y20/00 , G02B6/0031 , G02B6/005 , G02B6/0068 , G02F2202/36
摘要： PROBLEM TO BE SOLVED: To provide an LCD backlight display that eliminates an effect in differences caused by deterioration over time when different colored LEDs are used, and secures total internal reflection of projection light in a light pipe from a light source, thus avoiding deterioration of light conversion efficiency.SOLUTION: An apparatus includes the light source, the light pipe 73, and a light conversion layer 60. The light source includes a plurality of LED dies 71 arranged in an array, each LED emitting light having an excitation wavelength, the light source emitting light within a cone of angles. The light source includes a first reflector 72 reflecting light from the LED dies to an edge surface of the light pipe, and its size and cross-sectional shape is selected so that all light, which is reflected on a top surface or a bottom surface of the light pipe at first, is reflected at a larger angle than a critical angle. The light pipe 73 is positioned to receive the light within the cone of angles through the edge surface such that the light within the predetermined cone of angles is totally reflected from the top surface.
摘要翻译：要解决的问题：提供一种LCD背光显示器，其消除了当使用不同的彩色LED时随着时间的劣化而引起的差异的影响，并且确保投影光从光源到光管中的全内反射，因此避免光转换效率的恶化。解决方案：一种装置，包括光源，光管73和光转换层60.光源包括排列成阵列的多个LED管芯71，每个LED发射具有激发波长的光，该光光源在角锥内发光。光源包括将来自LED管芯的光反射到光管的边缘表面的第一反射器72，并且其尺寸和横截面形状被选择为使得在顶表面或底表面上反射的所有光首先，光管以比临界角更大的角度反射。光管73被定位成通过边缘表面接收角锥体内的光，使得预定锥角内的光从顶表面全反射。版权所有（C）2013，JPO＆INPIT

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