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1. 发明专利

JP2008124492A Contoured-tub fermi-threshold field effect transistor and method of forming same 审中-公开
标题翻译：轮廓线边界场效应晶体管及其形成方法
公开(公告)号：JP2008124492A
公开(公告)日：2008-05-29
申请号：JP2008002517
申请日：2008-01-09
申请人： Thunderbird Technologies Inc , サンダーバード・テクノロジーズ,インコーポレイテッド
发明人： DENNEN MICHAEL WILLIAM
IPC分类号： H01L29/78 , H01L21/265 , H01L21/336 , H01L29/08 , H01L29/10
CPC分类号： H01L29/0847 , H01L21/26586 , H01L29/1079 , H01L29/1083 , H01L29/1087 , H01L29/6659 , H01L29/7838
摘要： PROBLEM TO BE SOLVED: To improve a Fermi-threshold field effect (Fermi FET) and a method of forming same. SOLUTION: The Fermi-threshold field effect transistor includes a contoured-tub region of the same conductivity type as the source, drain and channel regions. The contoured-tub region has nonuniform tub depth. The contoured-tub is preferably deeper under the source and/or drain regions than under the channel region. Thus, the tub-substrate junction is deeper under the source and/or drain regions than under the channel region. The diffusion capacitance is thereby reduced compared to a tub having a uniform tub depth, so that a high saturation current is produced at low voltages. The contoured-tub may be formed by an additional implant into the substrate using the gate as a mask. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提高费米阈值场效应（费米子FET）及其形成方法。解决方案：费米阈值场效应晶体管包括与源极，漏极和沟道区相同的导电类型的波纹形槽区域。波纹盆地区域的盆深不均匀。波纹管优选在源极和/或漏极区域下方比在沟道区域下方更深。因此，在源极和/或漏极区域之下，在衬底 - 衬底结点之下比沟道区域下面更深。与具有均匀的桶深度的桶相比，扩散电容因此降低，使得在低电压下产生高饱和电流。轮廓桶可以通过使用门作为掩模的附加植入物形成到衬底中。版权所有（C）2008，JPO＆INPIT

2. 发明专利

TW200629552A 應變矽晶,閘極工程之費米場效電晶體 STRAINED SILICON, GATE ENGINEERED FERMI-FETS 审中-公开
简体标题：应变硅晶,闸极工程之费米场效应管 STRAINED SILICON, GATE ENGINEERED FERMI-FETS
公开(公告)号：TW200629552A
公开(公告)日：2006-08-16
申请号：TW094143262
申请日：2005-12-07
申请人：雷鳥工業技術公司 THUNDERBIRD TECHNOLOGIES, INC.
发明人：威廉R 理查二世 RICHARDS, WILLIAM R. JR. , 邁可嚴肇昇 SHEN, MIKE YEN-CHAO
IPC分类号： H01L
CPC分类号： H01L21/28255 , H01L21/2807 , H01L29/1054 , H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L29/7838
摘要：本發明提供一種場效電晶體，其包括一位於一基板中之應變矽晶通道、位於該基板中的該應變矽晶通道之相對端處的源極／汲極區、一位於該應變矽晶通道上之閘極絕緣層及一位於該閘極絕緣層上之閘極。該應變矽晶通道之摻雜、該基板之摻雜及／或該應變矽晶通道之深度經組態，從而在該場效電晶體之一臨限電壓下，在該閘極絕緣層及該應變矽晶通道表面中產生幾乎為零之垂直電場。此外，該閘極經組態以提供一接近矽晶之中間帶隙的閘極功函數。因此，提供了一具有一應變矽晶通道之Fermi–FET(費米場效電晶體)及一具有一中間帶隙功函數之閘極層。亦描述了使用磊晶生長之相關製造方法。
简体摘要：本发明提供一种场效应管，其包括一位于一基板中之应变硅晶信道、位于该基板中的该应变硅晶信道之相对端处的源极／汲极区、一位于该应变硅晶信道上之闸极绝缘层及一位于该闸极绝缘层上之闸极。该应变硅晶信道之掺杂、该基板之掺杂及／或该应变硅晶信道之深度经组态，从而在该场效应管之一临限电压下，在该闸极绝缘层及该应变硅晶信道表面中产生几乎为零之垂直电场。此外，该闸极经组态以提供一接近硅晶之中间带隙的闸极功函数。因此，提供了一具有一应变硅晶信道之Fermi–FET(费米场效应管)及一具有一中间带隙功函数之闸极层。亦描述了使用磊晶生长之相关制造方法。

3. 发明申请

WO2006062869A1 STRAINED SILICON, GATE ENGINEERED FERMI-FETS 审中-公开
标题翻译：应变硅，门工程FERMI-FET
公开(公告)号：WO2006062869A1
公开(公告)日：2006-06-15
申请号：PCT/US2005/043841
申请日：2005-12-06
申请人： THUNDERBIRD TECHNOLOGIES, INC. , RICHARDS, William, R., Jr. , SHEN, Mike, Yen-chao
发明人： RICHARDS, William, R., Jr. , SHEN, Mike, Yen-chao
IPC分类号： H01L21/28 , H01L29/78 , H01L29/10
CPC分类号： H01L21/28255 , H01L21/2807 , H01L29/1054 , H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L29/7838
摘要： A field effect transistor includes a strained silicon channel in a substrate, source/drain regions in the substrate at opposite ends of the strained silicon channel, a gate insulating layer on the strained silicon channel, and a gate on the gate insulating layer. The doping of the strained silicon channel, the doping of the substrate and/or the depth of the strained silicon channel are configured to produce nearly zero vertical electric field in the gate insulating layer and in the strained silicon channel surface at a threshold voltage of the field effect transistor. Moreover, the gate is configured to provide a gate work function that is close to a mid-bandgap of silicon. Accordingly, a Fermi-FET with a strained silicon channel and a gate layer with a mid-bandgap work function are provided. Related fabrication methods using epitaxial growth also are described.
摘要翻译：场效应晶体管包括衬底中的应变硅沟道，在应变硅沟道的相对端处的衬底中的源极/漏极区域，应变硅沟道上的栅极绝缘层以及栅极绝缘层上的栅极。应变硅沟道的掺杂，衬底的掺杂和/或应变硅沟道的深度被配置为在栅极绝缘层和应变硅沟道表面中在阈值电压下产生几乎为零的垂直电场场效应晶体管。此外，栅极被配置为提供接近硅的中间带隙的栅极功能。因此，提供了具有应变硅沟道的费米FET和具有中带隙工作功能的栅极层。还描述了使用外延生长的相关制造方法。

4. 发明申请

WO1997033321A1 FERMI-THRESHOLD FIELD EFFECT TRANSISTORS INCLUDING SOURCE/DRAIN POCKET IMPLANTS AND METHODS OF FABRICATING SAME 审中-公开
标题翻译： FERMI-THRESHOLD场效应晶体管，包括源/漏口插入物及其制造方法
公开(公告)号：WO1997033321A1
公开(公告)日：1997-09-12
申请号：PCT/US1997004183
申请日：1997-03-06
申请人： THUNDERBIRD TECHNOLOGIES, INC. , RICHARDS, William, Robert, Jr. , DENNEN, Michael, William
发明人： THUNDERBIRD TECHNOLOGIES, INC.
IPC分类号： H01L29/78
CPC分类号： H01L29/0847 , H01L21/26586 , H01L29/1079 , H01L29/1083 , H01L29/1087 , H01L29/6659 , H01L29/7838
摘要： A Fermi-FET, including but not limited to a tub-FET, a contoured-tub Fermi-FET or a short channel Fermi-FET includes a drain extension region of the same conductivity type as the drain region and a drain pocket implant region of opposite conductivity type from the drain region. The drain pocket implant region acts as a drain field stop to reduce or prevent drain-to-source field reach-through. Reduced low drain field threshold voltage, significantly reduced drain induced barrier lowering and reduced threshold dependence on channel length may be obtained, resulting in higher performance in short channels.
摘要翻译：包括但不限于桶状FET，波纹管费米子FET或短沟道费米FET的费米FET包括与漏极区域相同的导电类型的漏极延伸区域和漏极区域与漏极区相反的导电型。漏极腔注入区域用作漏极场阻止器，以减少或阻止漏极到源极场通过。可以获得降低的漏极场阈值电压，显着降低漏极引起的栅极降低和降低对沟道长度的阈值依赖性，从而导致短沟道中更高的性能。

5. 发明申请

WO1997004489A1 SHORT CHANNEL FERMI-THRESHOLD FIELD EFFECT TRANSISTORS 审中-公开
标题翻译：短路频率场效应晶体管
公开(公告)号：WO1997004489A1
公开(公告)日：1997-02-06
申请号：PCT/US1996011968
申请日：1996-07-19
申请人： THUNDERBIRD TECHNOLOGIES, INC. , DENNEN, Michael, William
发明人： THUNDERBIRD TECHNOLOGIES, INC.
IPC分类号： H01L29/78
CPC分类号： H01L29/0847 , H01L21/26586 , H01L29/1079 , H01L29/1083 , H01L29/1087 , H01L29/6659 , H01L29/7838
摘要： A Fermi-threshold field effect transistor includes spaced-apart source and drain regions which extend beyond the Fermi-tub in the depth direction and which may also extend beyond the Fermi-tub in the lateral direction. In order to compensate for the junction with the substrate, the doping density of the substrate region is raised to counteract the shared charge. Furthermore, the proximity of the source and drain regions leads to a potential leakage due to the drain field which can be compensated for by reducing the maximum tub depth compared to a low capacitance Fermi-FET and a contoured-tub Fermi-FET while still satisfying the Fermi-FET criteria. The tub depth is maintained below a maximum tub depth. Short channel effects may also be reduced by providing source and drain extension regions in the substrate, adjacent the source and drain regions and extending towards the channel regions. The source and drain extension regions are doped the same conductivity type and doping concentration as the source and drain themselves. A Fermi-FET which is particularly suitable for small linewidths is thereby provided.
摘要翻译：费米阈值场效应晶体管包括在深度方向上延伸超过费米皿的间隔开的源极和漏极区域，并且还可以在横向方向上延伸超过费米子槽。为了补偿与衬底的结，衬底区域的掺杂密度被提高以抵消共享电荷。此外，源极和漏极区域的接近性导致由于漏极场引起的电位泄漏，可以通过减小与低电容费米FET和成型槽费米FET相比最大的阱深度来补偿，同时仍然满足费米FET标准。浴缸深度保持在最大桶深度以下。通过在衬底中提供源极和漏极延伸区域，邻近源极和漏极区域并且朝向沟道区域延伸，也可以减小短沟道效应。源极和漏极延伸区域掺杂与源极和漏极本身相同的导电类型和掺杂浓度。由此提供了特别适合于小线宽的费米FET。

6. 发明申请

WO1994006120A1 COINCIDENT ACTIVATION OF PASS TRANSISTORS IN A RANDOM ACCESS MEMORY 审中-公开
标题翻译：随机访问存储器中的通用晶体管的联合激活
公开(公告)号：WO1994006120A1
公开(公告)日：1994-03-17
申请号：PCT/US1993008232
申请日：1993-08-30
申请人： THUNDERBIRD TECHNOLOGIES, INC. , VINAL, Albert, W.
发明人： THUNDERBIRD TECHNOLOGIES, INC.
IPC分类号： G11C11/412
CPC分类号： G11C11/412
摘要： The pass transistors in a random access memory array are activated only upon coincident (simultaneous) selection of both the associated row and the associated column of the memory cell; otherwise, activation of the pass transistors is prevented. Thus, when a word line is selected, only the pass transistors in the memory cell corresponding to a simultaneously selected bit line is active, rather than all of the pass transistors pairs connected to the word line. Transient power consumption during word line selection and deselection is thereby reduced. Coincident pass transistor activation may be obtained by providing a column select line for each column of the memory array, and gating means in each cell which electrically activates the associated pass transistors only upon simultaneous selection of the associated column select line and the associated work line, and for preventing activation of the associated pass transistors otherwise. When the column select lines and gating means are used, shared bit lines may be provided in the array. A single shared bit line may be used between adjacent columns of cells since only one of the columns will be selected by the column select line. A high density memory design is therefore provided.
摘要翻译：随机访问存储器阵列中的传输晶体管仅在存储器单元的相关行和相关联的列的同时（同时）选择时被激活; 否则，阻止了传输晶体管的激活。因此，当选择字线时，只有对应于同时选择的位线的存储单元中的通过晶体管是有效的，而不是连接到字线的所有传输晶体管对。因此，在字线选择和取消选择期间的瞬时功耗被降低。可以通过为存储器阵列的每列提供列选择线以及每个单元中的选通装置仅在相关联的列选择线和相关联的工作线同时选择时电激活相关联的传输晶体管来获得重合通道晶体管激活，并且用于防止相关联的通过晶体管的激活。当使用列选择线和门控装置时，可以在阵列中提供共享位线。可以在单元的相邻列之间使用单个共享位线，因为列选择线将仅选择一列。因此提供了高密度存储器设计。

7. 发明申请

WO1993015524A1 FERMI THRESHOLD FIELD EFFECT TRANSISTOR WITH REDUCED GATE AND DIFFUSION CAPACITANCE 审中-公开
标题翻译：具有降低栅极和扩散电容的FERMI阈值场效应晶体管
公开(公告)号：WO1993015524A1
公开(公告)日：1993-08-05
申请号：PCT/US1993000992
申请日：1993-01-28
申请人： THUNDERBIRD TECHNOLOGIES, INC.
发明人： THUNDERBIRD TECHNOLOGIES, INC. , VINAL, Albert, W.
IPC分类号： H01L29/784
CPC分类号： H01L29/1079 , H01L21/26586 , H01L29/7838 , Y10S257/90
摘要： An improved Fermi FET structure with low gate and diffusion capacity allows conduction carriers to flow within the channel at a predetermined depth in the substrate below the gate, without requiring an inversion layer to be created at the surface of the semiconductor. The low capacity Fermi FET is preferably implemented using a Fermi Tub having a predetermined depth, and with a conductivity type opposite the substrate conductivity type and the same conductivity type as the drain and source diffusions.
摘要翻译：具有低栅极和扩散能力的改进的费米FET结构允许导电载流子在栅极下方的基板中的预定深度处在沟道内流动，而不需要在半导体的表面处产生反型层。低容量费米FET优选地使用具有预定深度的费米子管，并且具有与衬底导电类型相反的导电类型和与漏极和源极扩散相同的导电类型。

8. 发明申请

WO1992022067A1 DIFFERENTIAL LATCHING INVERTER AND RANDOM ACCESS MEMORY USING SAME 审中-公开
标题翻译：差分锁存逆变器和使用相同的随机存取存储器
公开(公告)号：WO1992022067A1
公开(公告)日：1992-12-10
申请号：PCT/US1992004630
申请日：1992-05-28
申请人： THUNDERBIRD TECHNOLOGIES, INC.
发明人： THUNDERBIRD TECHNOLOGIES, INC. , VINAL, Albert, W.
IPC分类号： G11C07/06
CPC分类号： G11C7/065 , G11C11/419
摘要： A differential latching inverter uses a pair of cross-coupled inverters having a skewed voltage transfer function to rapidly sense a differential signal on a pair of bit lines in a random access memory and provide high speed sensing during a read operation. The differential latching inverter may also include a pair of symmetrical transfer function output inverters and additional pull-up circuits to enhance high speed operation. The differential latching inverter may be used in a memory architecture having primary bit lines and signal bit lines, with a differential latching inverter being connected to each pair of signal bit lines. The primary bit lines and signal bit lines are coupled to one another during read and write operations and decoupled from one another otherwise. The read and write operations may be internally timed without the need for external clock pulses in response to a high speed address change detection system, and internal timing signals generated by delay ring segment buffers. A high speed, low power random access memory may thereby be provided.

9. 发明申请

WO1997029519A1 SHORT CHANNEL FERMI-THRESHOLD FIELD EFFECT TRANSISTORS INCLUDING DRAIN FIELD TERMINATION REGION AND METHODS OF FABRICATING SAME 审中-公开
标题翻译：短通道FERMI-THRESHOLD场效应晶体管，包括漏极场终止区域及其制造方法
公开(公告)号：WO1997029519A1
公开(公告)日：1997-08-14
申请号：PCT/US1997002108
申请日：1997-02-04
申请人： THUNDERBIRD TECHNOLOGIES, INC. , DENNEN, Michael, William
发明人： THUNDERBIRD TECHNOLOGIES, INC.
IPC分类号： H01L29/78
CPC分类号： H01L29/66651 , H01L29/1083 , H01L29/66575 , H01L29/7838
摘要： A Fermi-FET includes a drain field termination region between the source and drain regions, to reduce and preferably prevent injection of carriers from the source region into the channel as a result of drain bias. The drain field terminating region prevents excessive drain induced barrier lowering while still allowing low vertical field in the channel. The drain field terminating region is preferably embodied by a buried counterdoped layer between the source and drain regions, extending beneath the substrate surface from the source region to the drain region. The buried counterdoped layer may be formed using a three tub structure which produces three layers between the spaced apart source and drain regions. The drain field terminating region may also be used in a conventional MOSFET. The channel region is preferably formed by epitaxial deposition, so that the channel region need not be counterdoped relative to the drain field terminating region. Higher carrier mobility in the channel may thereby be obtained for a given doping level.
摘要翻译：费米FET包括在源极和漏极区之间的漏极场终止区，以减少并优选地防止由于漏极偏压而将载流子从源极区域注入到沟道中。漏极场终止区域防止过多的漏极引起的屏障降低，同时仍允许通道中的低垂直场。漏极端接区优选地由在源区和漏区之间的掩埋反掺杂层实现，在源极区到漏极区之下延伸到衬底表面下方。埋置的反掺杂层可以使用在隔开的源极和漏极区域之间产生三层的三层结构形成。漏极场终止区也可以用于传统的MOSFET。沟道区优选通过外延沉积形成，使得沟道区不需要相对于漏极场终止区被反掺杂。因此，对于给定的掺杂水平可以获得通道中较高的载流子迁移率。

10. 发明申请

WO1996018211A1 CONTOURED-TUB FERMI-THRESHOLD FIELD EFFECT TRANSISTOR AND METHOD OF FORMING SAME 审中-公开
标题翻译：轮廓线边界场效应晶体管及其形成方法
公开(公告)号：WO1996018211A1
公开(公告)日：1996-06-13
申请号：PCT/US1995015777
申请日：1995-12-05
申请人： THUNDERBIRD TECHNOLOGIES, INC. , DENNEN, Michael, William
发明人： THUNDERBIRD TECHNOLOGIES, INC.
IPC分类号： H01L29/78
CPC分类号： H01L29/0847 , H01L21/26586 , H01L29/1079 , H01L29/1083 , H01L29/1087 , H01L29/6659 , H01L29/7838
摘要： A Fermi-threshold field effect transistor includes a contoured-tub region of the same conductivity type as the source, drain and channel regions and having nonuniform tub depth. The contoured-tub is preferably deeper under the source and/or drain regions than under the channel region. Thus, the tub-substrate junction is deeper under the source and/or drain regions than under the channel region. The diffusion capacitance is thereby reduced compared to a tub having a uniform tub depth, so that a high saturation current is produced at low voltages. The contoured-tub may be formed by an additional implant into the substrate using the gate as a mask.
摘要翻译：费米阈值场效应晶体管包括与源极，漏极和沟道区相同的导电类型的波形形状的区域，并且具有不均匀的凹槽深度。波纹管优选在源极和/或漏极区域下方比在沟道区域下方更深。因此，在源极和/或漏极区域之下，在衬底 - 衬底结点之下比沟道区域下面更深。与具有均匀的桶深度的桶相比，扩散电容因此降低，使得在低电压下产生高饱和电流。轮廓桶可以通过使用门作为掩模的附加植入物形成到衬底中。

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