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    • 8. 发明申请
    • TUNEABLE LASER
    • WO2018055394A1
    • 2018-03-29
    • PCT/GB2017/052840
    • 2017-09-22
    • THE UNIVERSITY OF SHEFFIELD
    • KENNEDY, Kenneth Leslie
    • H01S5/14H01S5/34H01S3/08H01S3/106
    • A tuneable quantum cascade or interband cascade laser (100) has a gain (medium110), a cavity mirror (20), an interference filter (130) and a positioning (mechanism140). The gain medium (110) has an emission spectrum and the gain medium (110) is configured to emit a laser (beam111). The interference filter (130) is located between the gain medium (110) and the cavity (mirror120). The interference filter (130) is configured to transmit a portion of the emission spectrum in order to suppress laser emission by the gain medium at wavelengths other than the transmitted portion. The portion of the emission spectrum transmitted by the interference filter (130) varies across the interference (filter130). The positioning mechanism (140) is configured to move the interference filter (30) relative to the laser beam (111) in order to select the portion of the emission spectrum transmitted by the interference (filter130), thereby determining the emission spectrum of the tuneable (laser100).
    • 可调谐量子级联或带间级联激光器(100)具有增益(介质110),腔镜(20),干涉滤光器(130)和定位(机构140)。 增益介质(110)具有发射光谱,并且增益介质(110)被配置为发射激光(光束111)。 干涉滤波器(130)位于增益介质(110)和空腔(反射镜120)之间。 干涉滤光片(130)被配置为透射发射光谱的一部分,以抑制增益介质在除透射部分以外的波长处的激光发射。 由干涉滤波器(130)发射的部分发射频谱在干扰(滤波器130)两端变化。 定位机构(140)被配置为相对于激光束(111)移动干涉滤光片(30)以选择由干涉发射的发射光谱的一部分(滤光片130),由此确定可调谐的发射光谱 (laser100)。
    • 9. 发明申请
    • NORMALLY-OFF TRANSISTORS
    • 常关晶体管
    • WO2017153787A1
    • 2017-09-14
    • PCT/GB2017/050682
    • 2017-03-13
    • THE UNIVERSITY OF SHEFFIELD
    • MADATHIL, Sankara Narayanan EkkanathUNNI, Vineet
    • H01L29/778H01L29/20
    • A normally-off transistor comprising a first layer (102) of semiconductor material, a second layer (104) of semiconductor material comprising first (106) and second (108) regions and a third region (110) between the first and second region, a source electrode (130) connected to the first region (104) and a drain electrode (132) connected to the second region (108), and a gate electrode (134) located over the third region (110), wherein the first (104) and second (108) regions are of a material arranged to form a polarization having a first polarity at the interface (114, 116) between the first and second regions and the first semiconductor layer (102), and the third region (110) is of a material arranged to form a polarization having a second polarity opposite to the first polarity at the interface (118) between the third region and the first semiconductor layer of opposite polarity.
    • 包括半导体材料的第一层(102),包括第一(106)和第二(108)区域的半导体材料的第二层(104)以及第三区域(110)的常关晶体管 ),连接到第一区域(104)的源电极(130)和连接到第二区域(108)的漏电极(132);以及位于第三区域之上的栅电极(134) (110),其中所述第一区域(104)和所述第二区域(108)是被布置成在所述第一区域和第二区域与所述第一半导体层(102)之间的界面(114,116)处形成具有第一极性的偏振的材料 ),并且第三区域(110)是用于在第三区域和极性相反的第一半导体层之间的界面(118)处形成具有与第一极性相反的第二极性的极化的材料。