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1. 发明申请

US20060030166A1 Laser annealing method 有权
公开(公告)号：US20060030166A1
公开(公告)日：2006-02-09
申请号：US11203282
申请日：2005-08-15
申请人： Naoto Kusumoto , Koichiro Tanaka
发明人： Naoto Kusumoto , Koichiro Tanaka
IPC分类号： H01L21/324
CPC分类号： H01L21/268 , B23K26/06 , B23K26/064 , B23K26/0648 , B23K26/0665 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L21/02678 , H01L21/02686 , H01L21/02691 , H01L27/1285
摘要： In crystallizing an amorphous silicon film by illuminating it with linear pulse laser beams having a normal-distribution type beam profile or a similar beam profile, the linear pulse laser beams are applied in an overlapped manner. There can be obtained effects similar to those as obtained by a method in which the laser illumination power is gradually increased and then decreased in a step-like manner in plural scans.

2. 发明申请

US20060017380A1 Light-emitting device and method of manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20060017380A1
公开(公告)日：2006-01-26
申请号：US11206195
申请日：2005-08-18
申请人： Takeshi Fukunaga , Junya Maruyama
发明人： Takeshi Fukunaga , Junya Maruyama
IPC分类号： H01J1/62
CPC分类号： H01L27/3276 , H01L27/12 , H01L27/1214 , H01L27/1288 , H01L27/15 , H01L27/3211 , H01L27/3244 , H01L27/3246 , H01L27/3248 , H01L27/3262 , H01L27/3295 , H01L29/78645 , H01L29/78669 , H01L51/0097 , H01L51/5206 , H01L51/5218 , H01L51/5228 , H01L51/5234 , H01L51/5237 , H01L51/525 , H01L51/5271 , H01L51/56 , H01L2251/5315 , Y10S428/917
摘要： To provide a bright and highly reliable light-emitting device. An anode (102), an EL layer (103), a cathode (104), and an auxiliary electrode (105) are formed sequentially in lamination on a reflecting electrode (101). Further, the anode (102), the cathode (104), and the auxiliary electrode (105) are either transparent or semi-transparent with respect to visible radiation. In such a structure, lights generated in the EL layer (103) are almost all irradiated to the side of the cathode (104), whereby an effect light emitting area of a pixel is drastically enhanced.
摘要翻译：提供明亮高可靠的发光装置。在反射电极（101）上依次层叠形成阳极（102），EL层（103），阴极（104）和辅助电极（105）。此外，阳极（102），阴极（104）和辅助电极（105）相对于可见光辐射是透明的或半透明的。在这种结构中，EL层（103）中产生的光几乎全部被照射到阴极（104）的侧面，从而显着提高像素的效果发光面积。

3. 发明申请

US20060006348A1 Apparatus and method for doping 失效
公开(公告)号：US20060006348A1
公开(公告)日：2006-01-12
申请号：US11221956
申请日：2005-09-09
申请人： Shunpei Yamazaki , Toshiji Hamatani , Koichiro Tanaka
发明人： Shunpei Yamazaki , Toshiji Hamatani , Koichiro Tanaka
IPC分类号： G21K5/10
CPC分类号： H01J37/05 , H01J37/08 , H01J37/147 , H01J37/3171 , H01J37/32412 , H01J37/32752 , H01J2237/057 , H01J2237/0817 , H01J2237/304 , H01L21/26506 , H01L21/26513 , H01L21/26586
摘要： There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.

4. 发明申请

US20050239299A1 Method for manufacturing a display device including irradiating overlapping regions 有权
标题翻译：用于制造包括照射重叠区域的显示装置的方法
公开(公告)号：US20050239299A1
公开(公告)日：2005-10-27
申请号：US11159107
申请日：2005-06-23
申请人： Shunpei Yamazaki , Koichiro Tanaka
发明人： Shunpei Yamazaki , Koichiro Tanaka
IPC分类号： B23K26/073 , H01L21/20 , H01L21/26 , H01L21/268 , H01L21/77
CPC分类号： H01L21/02675 , B23K26/0738 , B23K26/08 , B23K26/082 , H01L21/02422 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L21/02686 , H01L21/02691 , H01L21/268 , H01L27/1285 , H01L27/1296
摘要： A device-forming region where a semiconductor device is formed is arranged on a substrate in the matrix of 2×2. A linear laser beam has a cross-section having a length longer than the width of the device-forming region. When the irradiation of the laser beam is performed, the region irradiated with the end portions of the linear laser beams overlapped with each other or brought into contact with each other, is made positioned outside the device-forming region.
摘要翻译：形成半导体器件的器件形成区域以2x2的矩阵形式布置在衬底上。线性激光束的横截面长度大于器件形成区域的宽度。当进行激光束的照射时，将由线状激光束的端部照射的区域彼此重叠或彼此接触的区域设置在器件形成区域的外部。

5. 发明申请

US20050237286A1 Electronic device and method of driving the same 有权
公开(公告)号：US20050237286A1
公开(公告)日：2005-10-27
申请号：US11154598
申请日：2005-06-17
申请人： Yoshifumi Tanada
发明人： Yoshifumi Tanada
IPC分类号： G09G3/20 , G09G3/30 , G09G3/3233 , G09G3/3266 , G09G3/3275 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/32 , H01L29/786 , H01L51/50
CPC分类号： H01L27/1259 , G09G3/2022 , G09G3/3225 , G09G2300/0465 , G09G2300/0842 , G09G2300/0861 , H01L27/1214 , H01L27/127 , H01L27/3244 , H01L29/78621 , H01L2029/7863
摘要： An electro-optical device with a pixel portion of enhanced definition is provided, which uses pixels having a novel structure so that the number of stages of a source signal line side driver circuit is reduced to half the number of pixels in the horizontal direction, thereby making a space for placing the driver circuit and increasing the aperture ratio. One horizontal period is divided into the former half and the latter half. Signals for two adjacent pixels are successively inputted to one source signal line. A pixel selecting portion is provided between the two adjacent pixels. The signal selecting portion selects one of the pixels in the former half of one horizontal period so that a signal is written in the pixel whereas it selects the other pixel during the latter half of the horizontal period so that a signal is written in the pixel. Since one source signal line is shared between two adjacent pixels, the invention is advantageous also in terms of aperture ratio.

6. 发明申请

US20050218400A1 Light emitting device, driving method for the same and electronic apparatus 有权
公开(公告)号：US20050218400A1
公开(公告)日：2005-10-06
申请号：US11139441
申请日：2005-05-31
申请人： Jun Koyama
发明人： Jun Koyama
IPC分类号： G09G3/20 , G09G3/32 , H01L27/32 , H01L29/08
CPC分类号： G09G3/325 , G09G3/2022 , G09G3/3225 , G09G3/3266 , G09G3/3275 , G09G3/3283 , G09G3/3291 , G09G2300/0426 , G09G2300/0465 , G09G2300/0842 , G09G2300/0861 , G09G2300/0895 , G09G2310/0251 , G09G2310/0262 , G09G2310/027 , G09G2310/08 , G09G2320/0233 , G09G2320/0266 , G09G2320/041 , G09G2320/043 , H01L27/1255 , H01L27/3244 , H01L27/3276 , H01L29/4908
摘要： It is a problem to provide a light-emitting device capable of obtaining a constant brightness without being affected by deterioration in an organic light-emitting layer or temperature change, and of making desired color display. The lowering in OLED brightness due to deterioration is reduced by causing the OLED to emit light while keeping constant the current flowing through the OLED instead of causing the OLED to emit light while keeping constant the OLED drive voltage. Namely, OLED brightness is controlled not by voltage but by current thereby preventing against the change in OLED brightness due to deterioration of OLED. Specifically, the drain current Id of a transistor for supplying a current to the OLED is controlled in a signal line drive circuit thereby keeping constant the drain current Id without relying upon the value of a load resistance.

7. 发明申请

US20050206008A1 Electronic device and method for manufacturing the same 有权
公开(公告)号：US20050206008A1
公开(公告)日：2005-09-22
申请号：US11142300
申请日：2005-06-02
申请人： Shunpei Yamazaki , Satoshi Teramoto
发明人： Shunpei Yamazaki , Satoshi Teramoto
IPC分类号： H01L21/336 , H01L23/48 , H01L23/52 , H01L23/532 , H01L29/40 , H01L29/49 , H01L29/786
CPC分类号： H01L27/124 , H01L23/53214 , H01L27/1214 , H01L29/458 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L2924/0002 , H05K1/0306 , H05K1/09 , H05K2203/0315 , H05K2203/0597 , H01L2924/00
摘要： An electronic device is provided using wiring comprising aluminum to prevent hillock or whisker from generating, wherein the wiring contains oxygen atoms at a concentration of 8×1018 atoms·cm−3 or less, carbon atoms at a concentration of 5×1018 atoms·cm−3 or less, and nitrogen atoms at a concentration of 7×1017 atoms·cm−3 or less; furthermore, a silicon nitride film is formed on the aluminum gate, and an anodic oxide film is formed on the side planes thereof.

8. 发明申请

US20050189572A1 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050189572A1
公开(公告)日：2005-09-01
申请号：US10667899
申请日：2003-09-23
申请人： Akiharu Miyanaga , Nobuo Kubo
发明人： Akiharu Miyanaga , Nobuo Kubo
IPC分类号： H01L29/78 , H01L21/265 , H01L21/266 , H01L21/8234 , H01L21/8238 , H01L27/088 , H01L29/10 , H01L29/76
CPC分类号： H01L21/823807 , H01L21/26586 , H01L21/266 , H01L21/823814 , H01L29/1045 , H01L29/1083
摘要： In a semiconductor device, pining regions 105 are disposed along the junction portion of a drain region 102 and a channel forming region 106 locally in a channel width direction. With this structure, because the spread of a depletion layer from a drain side is restrained by the pining regions 105, a short-channel effect can be restrained effectively. Also, because a passage through which carriers move is ensured, high mobility can be maintained.
摘要翻译：在半导体器件中，沿着漏极区域102和沟道形成区域106的接合部分在通道宽度方向上局部设置引线区域105。利用这种结构，由于由漏极侧的耗尽层的扩散被引线区域105抑制，所以可以有效地抑制短沟道效应。此外，由于确保了载流子移动的通道，所以可以维持高流动性。

9. 发明申请

US20050184652A1 Display device and manufacturing method thereof 审中-公开
标题翻译：显示装置及其制造方法
公开(公告)号：US20050184652A1
公开(公告)日：2005-08-25
申请号：US10821927
申请日：2004-04-12
申请人： Junya Maruyama , Shunpei Yamazaki
发明人： Junya Maruyama , Shunpei Yamazaki
IPC分类号： G09G3/32 , H01L27/32 , H01L51/52 , H01L51/56 , H01J1/62 , H01J63/04
CPC分类号： H01L51/5246 , G09G3/3233 , G09G2300/0842 , G09G2310/0251 , H01L27/3244 , H01L27/3251 , H01L27/3281 , H01L51/0096 , H01L51/524 , H01L51/5259 , H01L51/5262 , H01L51/5281 , H01L51/56 , H01L2251/5315 , H01L2251/558
摘要： In a display device using an organic light emitting diode (OLED), the occurrence or a dark spot and peeling of a cathode due to moisture are suppressed. An outer edge portion of a sealing substrate (second substrate) (102) is made to have a convex shape and a gap between the sealing substrate and an element substrate are controlled by means of this convex region. Thus, since it is not required that a layer (106) having adhesion for bonding together the sealing substrate and the element substrate has a function for controlling the gap, the thickness of the layer can be minimized. Therefore, the amount of moisture which is transmitted through the layer (having adhesion) made of an organic material and penetrated in a sealed region can be reduced.
摘要翻译：在使用有机发光二极管（OLED）的显示装置中，抑制由于水分导致的阴极的发生或黑斑以及剥离。将密封基板（第二基板）（102）的外缘部形成为凸形，通过该凸区域来控制密封基板与元件基板之间的间隙。因此，由于不需要具有用于将密封基板和元件基板接合在一起的粘合层（106）具有用于控制间隙的功能，因此可以使层的厚度最小化。因此，可以减少由有机材料制成并渗透在密封区域中的透过层（具有粘附性）的水分量。

10. 发明申请

US20050162602A1 Liquid-crystal display device and method of fabricating the same 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20050162602A1
公开(公告)日：2005-07-28
申请号：US11085214
申请日：2005-03-22
申请人： Shunpei Yamazaki , Jun Koyama
发明人： Shunpei Yamazaki , Jun Koyama
IPC分类号： G02F1/1343 , G02F1/1345
CPC分类号： G02F1/1345 , G02F1/134363
摘要： An active matrix type liquid-crystal display device of IPS mode has its aperture ratio enhanced, thereby to realize an image display which has a wide angle of vision and which is clear and bright. A pixel portion (in FIG. 2) in the liquid-crystal display device comprises a TFT (115) which includes a semiconductor film formed over a substrate, and gate electrodes formed on a first insulating layer, a gate wiring line (104) which is formed on the first insulating layer, a common wiring line (113) which crosses the gate wiring line (104) through a second insulating layer, a pixel electrode (112) which is formed on the second insulating layer and which is connected with the TFT (115) of the pixel portion, a signal wiring line (106) which is formed so as to underlie the common wiring line (113) through the second insulating layer, and a connecting electrode (111) which is formed on the second insulating layer. The pixel electrode (112) and the common wiring line (113) are arranged so as to generate an electric field parallel to the plane of the substrate, and the signal wiring line (106) and the semiconductor film are connected through the connecting electrode (111).
摘要翻译： IPS模式的有源矩阵型液晶显示装置的开口率增加，从而实现了具有宽视角且清晰明亮的图像显示。液晶显示装置中的像素部分（图2中）包括TFT（115），其包括形成在基板上的半导体膜，以及形成在第一绝缘层上的栅电极，栅极布线（104）形成在第一绝缘层上，通过第二绝缘层与栅极布线（104）交叉的公共布线（113），形成在第二绝缘层上的与第二绝缘层连接的像素电极（112）像素部分的TFT（115），通过第二绝缘层形成为公共布线（113）的下方的信号布线（106）以及形成在第二绝缘层上的连接电极（111）层。像素电极（112）和公共配线（113）配置成产生与基板平面平行的电场，信号配线（106）和半导体膜通过连接电极（ 111）。

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