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1. 发明专利

NO986178A 未知
公开(公告)号：NO986178A
公开(公告)日：1999-02-26
申请号：NO986178
申请日：1998-12-29
申请人： SUMITOMO SITIX CORP , ALCAN INT LTD
发明人： KAMITAHIRA TAKASHI
IPC分类号： C25C20060101 , C25C3/04 , C25C7/06

2. 发明专利

DE69501090D1 未知
公开(公告)号：DE69501090D1
公开(公告)日：1998-01-08
申请号：DE69501090
申请日：1995-03-29
申请人： SUMITOMO SITIX CORP
发明人： KUBO TAKAYUKI
IPC分类号： C30B15/02 , C30B15/00 , C30B15/30 , C30B29/06 , H01L21/208 , C30B15/14

3. 发明专利

DE4442239A1 Appts. for prodn. of single crystals 未知
公开(公告)号：DE4442239A1
公开(公告)日：1995-06-01
申请号：DE4442239
申请日：1994-11-28
申请人： SUMITOMO SITIX CORP
发明人： KURAMOCHI KAORU , OKAMOTO SETSUO
IPC分类号： C30B15/00 , C30B15/14 , C30B29/06 , H01L21/208 , C30B15/20
摘要： Appts. for prodn. of single crystals comprises: (a) a crucible (1) contg. a melt (6) for the single crystal(s) to grow; (b) a heating element (2) to heat the melt; (c) pulling shaft for pulling the single crystal after a seed crystal (4) has been contacted with the surface of the melt in the crucible; (d) a protective gas inlet tube (9) surrounding the single crystal; and (e) a chamber (7,8) contg. all of the above. A heat-resistant and heat-insulating component (10) is installed so that it surrounds the pulling zone of the single crystal and is installed on the lower part of the tube (9). Process for producing a single crystal using the above appts. is also claimed.

4. 发明专利

DE4436826A1 Method and apparatus for preparing silicon monocrystals 未知
公开(公告)号：DE4436826A1
公开(公告)日：1995-04-20
申请号：DE4436826
申请日：1994-10-14
申请人： SUMITOMO SITIX CORP
发明人： AKASHI YOSHIHIRO , KURAMOCHI KAORU , OKAMOTO SETSUO , TSUJIMOTO YASUJI , ITO MAKOTO
IPC分类号： C30B15/20 , C30B15/00 , C30B29/06
摘要： The invention relates to a method and an apparatus for preparing silicon monocrystals having excellent dielectric strength of gate oxide films, by improving the previous thermal history by means of setting the temperature gradient of the silicon monocrystal (single crystal) without a loss in pulling rate during pulling. In the course of the process for preparing silicon monocrystals by the monocrystal being pulled up from the melt of the material for the single crystal, a specific average temperature gradient is applied to the grown monocrystal while it is still at high temperature. The apparatus is provided with a heating element outside a crucible and a pulling stem by means of which a monocrystal is pulled up from the melt of the material for the crystal. The ratio of the length h of the heating element to the internal diameter 0 of the crucible is between 0.2 and 0.8.

5. 发明专利

DE19737581A1 Seed crystal for pulling single crystal 未知
公开(公告)号：DE19737581A1
公开(公告)日：1999-03-04
申请号：DE19737581
申请日：1997-08-28
申请人： SUMITOMO SITIX CORP
发明人： IZUMI TERUO
IPC分类号： C30B15/36
摘要： Seed crystal (15) for pulling a single crystal has a cylindrical body (15a) and a conical front section (15b) to prevent induction of a dislocation. An Independent claim is also included for the process of pulling a single crystal using the seed crystal, in which the single crystal is pulled in a melt (13) after immersion and melting of the front section of the seed crystal without forming a neck. The cylindrical body has a diameter of 6 mm or more.

6. 发明专利

DE19808350A1 Method for semiconductor wafer evaluation 未知
公开(公告)号：DE19808350A1
公开(公告)日：1998-12-03
申请号：DE19808350
申请日：1998-02-27
申请人： MITSUBISHI ELECTRIC CORP , SUMITOMO SITIX CORP
发明人： KIMURA YASUHIRO , KUME MORIHIKO , FUJISE TSUNEAKI , GOHARA MASANORI
IPC分类号： G01N33/00 , G01N21/95 , H01L21/66 , H01L23/544 , H01L21/304 , G01N21/88
摘要： The method involves preparing a smooth polished semiconductor wafer. A processing defect is altered by grinding and polishing, including smooth polishing, to create a recess. Also defect below the surface of the wafer in a recess, which has an establishable size, is altered. A number of recesses are established on the semiconductor surface in this way. Dielectrical ruptures characteristic of an oxide film of the semiconductor wafer are evaluated on the basis of the number of the recesses established.

7. 发明专利

DE69120326T2 未知
公开(公告)号：DE69120326T2
公开(公告)日：1996-12-12
申请号：DE69120326
申请日：1991-03-27
申请人： SUMITOMO SITIX CORP
发明人： KANEKO KYOJIRO , MIZUMOTO HIDEYUKI , MISAWA TERUOKI
IPC分类号： C30B13/00 , C30B29/06
摘要： A manufacturing method for single-crystal silicon, characterized in that a polycrystalline silicon rod manufactured by a continuous casting through electromagnetic induction and by using as raw material polycrystalline silicon granules is single-crystallized by FZ method.

8. 发明专利

DE19740257A1 Seed crystal holder used in Czochralski single crystal growth process 未知
公开(公告)号：DE19740257A1
公开(公告)日：1999-03-18
申请号：DE19740257
申请日：1997-09-12
申请人： SUMITOMO SITIX CORP
发明人： IZUMI TERUO
IPC分类号： C30B15/32 , C30B15/36 , C30B29/06
摘要： A seed crystal holder has a cylindrical metal body embedded in the region surrounding the seed crystal. Independent claims are also included for: (i) a seed crystal holder comprising an inner cylindrical metal body, which holds a seed crystal directly and which is encased by a cylindrical carbon body; (ii) a single crystal growth seed crystal holder having a cavity corresponding to the seed crystal shape and being made of graphite reinforced with carbon fibers which are circumferentially wound at least down to the lower outer region and which extend vertically in the other regions; (iii) a single crystal growth seed crystal holder made of carbon fiber-reinforced graphite, the holder having an upper portion with a large diameter cavity connected by a middle portion to a lower portion with a small diameter cavity and having a design satisfying a given mathematical relationship; (iv) a seed crystal having an external shape matching that of the internal wall of the above holder (iii); (v) a seed crystal having a large diameter portion joined to a small diameter portion by a middle portion with a vertical curved cross-sectional shape; (vi) a seed crystal, in which the single crystal holding region has a surface non-uniformity of

9. 发明专利

DE19739247A1 Twisting vibration detector for silicon@ monocrystal 未知
公开(公告)号：DE19739247A1
公开(公告)日：1999-03-11
申请号：DE19739247
申请日：1997-09-08
申请人： SUMITOMO SITIX CORP
发明人： SAKURADA SHINICHI
IPC分类号： C30B15/00 , C30B15/22 , C30B15/26 , C30B15/30 , C30B29/06 , G01H9/00
摘要： The twisting vibration detector comprises a camera unit (1) placed at the outside of a silicon monocrystal growing chamber (2) so as to detect a rotation of a monocrystal (6) in the chamber, a memory unit (22) for processing and memorizing signals from the camera unit, and an arithmetic processing unit (21) for comparing signals from the camera unit and signals from the memory unit so as to decide a generation of an abnormal vibration of the silicon monocrystal. The twisting vibration detection method comprises detecting a seam portion (61) of a rotating silicon monocrystal by the camera unit, a step for memorizing time intervals of signals generated by detecting the seam portion, finding a mean value of the memorised time intervals, comparing time intervals of new signals from the camera unit and the calculated mean value, and deciding a generation of the abnormal vibration of the monocrystal when the deviation exceeding a specific value. The manufacture method feeds a signal to a silicon rotation drive unit when generation of an abnormal twisting vibration is decided so as to change the rotating speed of the silicon rotation drive unit.

10. 发明专利

NO986178L 未知
公开(公告)号：NO986178L
公开(公告)日：1999-02-26
申请号：NO986178
申请日：1998-12-29
申请人： SUMITOMO SITIX CORP , ALCAN INT LTD
发明人： KAMITAHIRA TAKASHI
IPC分类号： C25C20060101 , C25C3/04 , C25C7/06

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