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1. 发明专利

JP2013112880A Anodization apparatus, anodization system including the same, and semiconductor wafer 有权
标题翻译：阳离子装置，包括它们的阳离子系统和半导体滤波器
公开(公告)号：JP2013112880A
公开(公告)日：2013-06-10
申请号：JP2011262421
申请日：2011-11-30
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社 , Solexel Inc , ソレクセルインコーポレーテッドSolexel, Inc.
发明人： HAYASHI NORIYUKI , MIYAJI YASUYOSHI , YONEHARA SEIICHI , INAHARA TAKAMITSU , YONEHARA TAKAO , MOSLEHI MEHRDAD , TAMILMANI SUBRAMANIAN , KRAMER KARL-JOSEF , ASHJAEE JAY
IPC分类号： C25F7/00 , C25D11/32 , C25F3/12 , H01L21/306 , H01L21/3063
CPC分类号： C25D17/001 , C25D11/005 , C25D11/32 , C25D17/06 , C25D17/08 , C25D17/10 , H01L21/02002 , H01L21/67173 , H01L21/6723 , H01L21/67754 , H01L21/68707 , H01L29/06
摘要： PROBLEM TO BE SOLVED: To provide an anodization apparatus suitable for automatization and a batch process, and having a mechanism by which a substrate is held, transferred, and made into a part of an anodization tank, and a semiconductor substrate having a porous layer formed.SOLUTION: A plurality of substrates W are moved to a processing position while held by a left holder part 67 and a right holder part 69, and connected to an upper holder part 71 and a lower holder part 39, and then the whole circumferential surfaces of the plurality of substrates W are liquid-tight with an electrolyte solution in a reservoir 11. In this state, anodization processing is performed, and then the substrates W are discharged from the reservoir 11. Thus, the left holder part 67 and the right holder part 69 are structured along with the upper holder part 71 and the lower holder part 39 so as to be able to hold the substrates W in a liquid-tight state. Therefore, the anodization apparatus 1 suitable for automatization and a batch process is achieved, by which the plurality of the substrates W are transferred, and porous layers are formed. Also, according to the apparatus, the semiconductor substrate including porous layers efficiently and uniformly formed on both surfaces, the front and rear surfaces, can be provided.
摘要翻译：要解决的问题：提供一种适用于自动化和分批处理的阳极氧化装置，并且具有将基板保持，转移并制成阳极氧化槽的一部分的机构，以及具有形成多孔层。解决方案：将多个基板W移动到处理位置，同时由左保持器部分67和右保持器部分69保持，并连接到上保持器部分71和下保持器部分39，然后整体多个基板W的圆周表面在储存器11中用电解液液密。在该状态下，进行阳极氧化处理，然后基板W从储存器11排出。因此，左支架部分67和右支架部分69与上保持器部分71和下保持器部分39一起构成，以便能够将基板W保持在液密状态。因此，实现了适用于自动化和分批处理的阳极氧化装置1，通过该阳极氧化装置多个基板W被转印，形成多孔层。此外，根据该装置，可以提供包括在前表面和后表面的两个表面上有效且均匀地形成的多孔层的半导体衬底。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2012119570A Anodization apparatus 审中-公开
标题翻译：抗菌设备
公开(公告)号：JP2012119570A
公开(公告)日：2012-06-21
申请号：JP2010269416
申请日：2010-12-02
申请人： Dainippon Screen Mfg Co Ltd , Solexel Inc , ソレクセルインコーポレーテッドSolexel, Inc. , 大日本スクリーン製造株式会社
发明人： MIYAJI YASUYOSHI , HAYASHI TOKUYUKI , INAHARA TAKAMITSU , YONEHARA TAKAO , CARL JOSEPH CRAYMER , SUBRAHMANYAN TAMIRMANI
IPC分类号： H01L21/3063 , H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide an anodization apparatus suitable for automation and batch processing by devising a substrate holding mechanism.SOLUTION: In an anodization apparatus, when a plurality of substrates are loaded on a first support unit 57 by alienating the first support unit 57 and a second support unit 73 disposed in a storage tank 9, the plurality of substrates are supported such that only the lower parts of the peripheral surfaces thereof are liquid-tight with an electrolyte solution. When the second support unit 73 is coupled to the first support unit 57, the plurality of substrates are supported in a state where the remaining parts of the peripheral surfaces of the substrates are liquid-tight with the electrolyte solution, whereby the entire peripheral surfaces of the substrates are liquid-tight with the electrolyte solution. By allowing the first support unit 57 and the second support unit 73 to serve as a detachable substrate holder 41, the plurality of substrates are mechanically carried in or out to provide an anodization apparatus suitable for automation and batch processing.
摘要翻译：要解决的问题：通过设计基板保持机构来提供适合于自动化和批量处理的阳极氧化装置。解决方案：在阳极氧化装置中，当通过疏散第一支撑单元57和设置在储罐9中的第二支撑单元73将多个基板装载在第一支撑单元57上时，多个基板被支撑为其周边表面的下部仅用电解液液密。当第二支撑单元73联接到第一支撑单元57时，多个基板被支撑在基板的周边表面的其余部分与电解液液密的状态下，从而整个周边表面基板与电解质溶液是液密的。通过允许第一支撑单元57和第二支撑单元73用作可拆卸的基板支架41，多个基板被机械地承载或移出以提供适于自动化和批量处理的阳极氧化装置。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2012119571A Anodization apparatus 审中-公开
标题翻译：抗菌设备
公开(公告)号：JP2012119571A
公开(公告)日：2012-06-21
申请号：JP2010269417
申请日：2010-12-02
申请人： Dainippon Screen Mfg Co Ltd , Solexel Inc , ソレクセルインコーポレーテッドSolexel, Inc. , 大日本スクリーン製造株式会社
发明人： MIYAJI YASUYOSHI , HAYASHI TOKUYUKI , INAHARA TAKAMITSU , YONEHARA TAKAO
IPC分类号： H01L21/3063 , C25F7/00
摘要： PROBLEM TO BE SOLVED: To provide an anodization apparatus capable of performing batch processing and enhancing an operation rate by minimizing electrode exchange frequency.SOLUTION: In an anodization apparatus, if a substrate holder 41 disposed in a storage tank 9 is allowed to hold a plurality of substrates and electrodes 21 and 23 are electrified, ions move between electrode tanks 21 and 23, which causes a chemical conversion reaction on the plurality of substrates through ion-exchange membranes 29 and 35. Therefore, batch processing that processes the plurality of substrates becomes possible. Moreover, the concentration of the electrolyte solution stored in electrode tanks 5 and 7 is set to be lower than that of the electrolyte solution stored in the storage tank 9. Therefore, since the chemical conversion reaction in the electrode tanks 5 and 7 is suppressed as compared to the inside of the storage tank 9, a local chemical conversion reaction caused at the electrodes 21 and 23 in the electrode tanks 5 and 7 is suppressed. Consequently, the degradation of the electrodes 21 and 23 can be minimized to enhance the operation rate of the apparatus.
摘要翻译：要解决的问题：提供能够通过最小化电极交换频率来进行批量处理和提高操作速率的阳极氧化装置。解决方案：在阳极氧化装置中，如果允许设置在储罐9中的基板保持件41保持多个基板，电极21和23通电，则离子在电极槽21和23之间移动，这导致化学通过离子交换膜29和35在多个基板上的转化反应。因此，可以进行处理多个基板的批处理。此外，电解槽5和7中储存的电解质溶液的浓度设定得低于储存在储罐9中的电解液的浓度。因此，由于电极槽5和7中的化学转化反应被抑制为与储罐9的内部相比，抑制了在电极槽5和7中的电极21和23处引起的局部化学转化反应。因此，电极21和23的劣化可以最小化，以提高装置的操作速度。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2014143436A Pyramid shape three-dimensional thin-film solar cell 有权
标题翻译： PYRAMID形状三维薄膜太阳能电池
公开(公告)号：JP2014143436A
公开(公告)日：2014-08-07
申请号：JP2014076786
申请日：2014-04-03
申请人： Solexel Inc , ソレクセル、インコーポレイテッド
发明人： MEHRDAD MOSLEHI
IPC分类号： H01L31/047 , H01L31/0236 , H01L31/056 , H01L31/068
CPC分类号： H01L31/046 , G03G21/203 , H01L31/022425 , H01L31/022458 , H01L31/02363 , H01L31/02366 , H01L31/0352 , H01L31/035281 , H01L31/03529 , H01L31/042 , H01L31/048 , H01L31/0488 , H01L31/049 , H01L31/05 , H01L31/0504 , H01L31/0547 , H01L31/056 , H01L31/068 , H01L31/18 , H01L31/182 , H01L31/1896 , H02S40/36 , Y02B10/12 , Y02E10/52 , Y02E10/546 , Y02E10/547 , Y02P70/521 , Y10T117/1092
摘要： PROBLEM TO BE SOLVED: To provide a thin-film solar cell having excellent properties.SOLUTION: A pyramid shape three-dimensional thin-film solar cell comprises a pyramid shape three-dimensional thin-film solar cell substrate comprising a plurality of pyramid-shaped unit cells with emitter junction regions and doped base regions, emitter metallization process regions and base metallization process regions. Optionally, the pyramidal three-dimensional thin-film solar cell may be mounted on a rear mirror to improve light trapping and conversion efficiency.
摘要翻译：要解决的问题：提供一种具有优异性能的薄膜太阳能电池。解决方案：一种金字塔形三维薄膜太阳能电池，包括金字塔形三维薄膜太阳能电池基板，其包括多个金字塔形具有发射极结区域和掺杂基极区域，发射极金属化工艺区域和基底金属化工艺区域的单元电池。可选地，金字塔形三维薄膜太阳能电池可以安装在后视镜上以提高光捕获和转换效率。

6. 发明专利

JP2014150280A Template for manufacturing three-dimensional thin-film solar cell and use method 审中-公开
标题翻译：用于制造三维薄膜太阳能电池的模板和使用方法
公开(公告)号：JP2014150280A
公开(公告)日：2014-08-21
申请号：JP2014084330
申请日：2014-04-16
申请人： Solexel Inc , ソレクセル、インコーポレイテッド
发明人： MEHRDAD MOSLEHI
IPC分类号： H01L31/0352 , H01L31/047
CPC分类号： H01L31/046 , G03G21/203 , H01L31/022425 , H01L31/022458 , H01L31/02363 , H01L31/02366 , H01L31/0352 , H01L31/035281 , H01L31/03529 , H01L31/042 , H01L31/048 , H01L31/0488 , H01L31/049 , H01L31/05 , H01L31/0504 , H01L31/0547 , H01L31/056 , H01L31/068 , H01L31/18 , H01L31/182 , H01L31/1896 , H02S40/36 , Y02B10/12 , Y02E10/52 , Y02E10/546 , Y02E10/547 , Y02P70/521 , Y10T117/1092
摘要： PROBLEM TO BE SOLVED: To provide a thin-film solar cell having excellent properties.SOLUTION: A template 100 for three-dimensional thin-film solar cell substrate formation is used for three-dimensional thin-film solar cells. The template 100 comprises a substrate which comprises a plurality of posts 102 and a plurality of trenches 104 between the plurality of posts 102. The template 100 forms environment for the three-dimensional thin- film solar cell substrate formation.
摘要翻译：要解决的问题：提供一种具有优异性能的薄膜太阳能电池。解决方案：用于三维薄膜太阳能电池基板形成的模板100用于三维薄膜太阳能电池。模板100包括在多个柱102之间包括多个柱102和多个沟槽104的基板。模板100形成用于三维薄膜太阳能电池基板形成的环境。

7. 发明专利

MY173413A HIGH-EFFICIENCY SOLAR PHOTOVOLTAIC CELLS AND MODULES USING THIN CRYSTALLINE SEMICONDUCTOR ABSORBERS 未知
公开(公告)号：MY173413A
公开(公告)日：2020-01-23
申请号：MYPI2014700259
申请日：2012-08-09
申请人： SOLEXEL INC
发明人： MOSLEHI MEHRDAD M , KAPUR PAWAN , KRAMER K -JOSEF , RANA VIRENDRA V , SEUTTER SEAN , DESHPANDE ANAND , CALCATERRA ANTHONY , OLSEN GERRY , MANTEGHI KAMRAN , STALCUP THOM , KAMIAN GEORGE D , WANG DAVID XUAN-QI , SU YEN-SHENG , WINGERT MICHAEL
摘要： Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described. The Most Illustrative Drawing: Figure 4

8. 发明专利

MY170447A SYSTEMS AND METHODS FOR MONOLITHICALLY INTEGRATED BYPASS SWITCHES IN PHOTOVOLTAIC SOLAR CELLS AND MODULES 未知
公开(公告)号：MY170447A
公开(公告)日：2019-07-31
申请号：MYPI2015000994
申请日：2013-10-16
申请人： SOLEXEL INC
发明人： MEHRDAD M MOSLEHI
摘要： Structures and methods for a solar cell having an integrated bypass switch are provided. According to one embodiment, an integrated solar cell and bypass switch comprising a semiconductor layer having background doping, a frontside, and a backside is provided. A patterned first level metal is positioned on the layer backside and an electrically insulating backplane is positioned on the first level metal. A trench isolation pattern partitions the semiconductor layer into a solar cell region and at least one monolithically integrated bypass switch region. A patterned second level metal is positioned on the electrically insulating backplane and which connects to the first level metal through the backplane to complete the electrical metallization of the monolithically integrated solar cell and bypass switch structure. The most illustrative drawing.: Fig 20B

9. 发明专利

MY166305A High-efficiency Photovoltaic Back-contact Solar Cell Structures and Manufacturing Methods Using Thin Planar Semiconductor Absorbers 未知
公开(公告)号：MY166305A
公开(公告)日：2018-06-25
申请号：MYPI2012700546
申请日：2010-12-09
申请人： SOLEXEL INC
发明人： MOSLEHI MEHRDAD M , KAPUR PAWAN , KRAMER KARL-JOSEF , WANG DAVID XUAN QI , SEUTTER SEAN , RANA VIRENDRA V , CALCATERRA ANTHONY , VAN KERSCHAVER EMMANUEL
IPC分类号： H01L31/0224 , H01L31/18
摘要： Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell. Figure 13

10. 发明专利

AU2013337262A1 Systems and methods for monolithically isled solar photovoltaic cells and modules 未知
公开(公告)号：AU2013337262A1
公开(公告)日：2015-05-21
申请号：AU2013337262
申请日：2013-11-05
申请人： SOLEXEL INC
发明人： MOSLEHI MEHRDAD M
IPC分类号： H01L31/042 , H01L31/18
摘要： According to one aspect of the disclosed subject matter, a monolithically isled solar cell is provided. The solar cell comprises a semiconductor layer having a light receiving frontside and a backside opposite the frontside and attached to an electrically insulating backplane. A trench isolation pattern partitions the semiconductor layer into electrically isolated isles on the electrically insulating backplane. A first metal layer having base and emitter electrodes is positioned on the semiconductor layer backside. A patterned second metal layer providing cell interconnection and connected to the first metal layer by via plugs is positioned on the backplane.

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