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1. 发明专利

AU2003215143A1 HIGH PERFORMANCE ACTIVE AND PASSIVE STRUCTURES BASED ON SILICON MATERIAL GROWN EPITAXIALLY OR BONDED TO SILICON CARBIDE SUBSTRATE 未知
公开(公告)号：AU2003215143A1
公开(公告)日：2003-09-04
申请号：AU2003215143
申请日：2003-02-05
申请人： SIRENZA MICRODEVICES INC
发明人： JOHNSON JOSEPH H , ANNA PABLO E D
IPC分类号： H01L21/20 , H01L27/06 , H01L31/0312
摘要： The present invention discloses and claims the silicon carbide based silicon structure comprising: (1) a silicon carbide substrate, (2) a silicon semiconductor material having a top surface, and either bonded to the silicon carbide substrate via the bonding layer, or epitaxially grown on the silicon carbide substrate; and (3) at least one separation plug formed in the silicon semiconductor material. The separation plug extends from the top surface of the silicon semiconductor material into the silicon carbide substrate at a separation plug depth level, and is configured to block the coupling between at least two adjacent active/passive structures formed in the silicon semiconductor material.

2. 发明专利

AU2003295737A1 DIRECT COUPLED DISTRIBUTED AMPLIFIER 未知
公开(公告)号：AU2003295737A1
公开(公告)日：2004-06-18
申请号：AU2003295737
申请日：2003-11-19
申请人： SIRENZA MICRODEVICES INC
发明人： KOBAYASHI KEVIN
IPC分类号： H03F3/60
摘要： An apparatus comprising an input stage, an output stage, a bias circuit and a feedback circuit. The input stage may be configured to generate a plurality of intermediate signals in response to an input signal. The output stage may be (i) DC coupled to the input stage and (ii) configured to generate an output signal in response to the intermediate signals. The output stage generally comprises a plurality of distributed amplifiers each configured to receive one of the intermediate signals. The bias circuit may be (i) connected between the input stage and the output stage and (ii) configured to adjust an input impedance of the input stage.

3. 发明专利

AU2003239560A1 MICROWAVE FIELD EFFECT TRANSISTOR STRUCTURE 未知
公开(公告)号：AU2003239560A1
公开(公告)日：2003-12-12
申请号：AU2003239560
申请日：2003-05-21
申请人： SIRENZA MICRODEVICES INC
发明人： ANNA PABLO E D , JOHNSON JOSEPH H
IPC分类号： H01L29/06 , H01L29/08 , H01L29/417 , H01L29/78 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L23/58
摘要： A microwave transistor structure comprising: (1) a substrate having a top surface; (2) a silicon semiconductor material of a first conductivity type; (3) a conductive gate; (4) a channel region of a second conductivity type; (5) a drain region of the second conductivity type; (6) a body of the first conductivity type; (7) a source region of the second conductivity type; (8) a shield plate region formed on the top surface of the silicon semiconductor material over a portion of the channel region, wherein the shield plate is adjacent and parallel to the drain region, and to the conductive gate region; and (9) a conductive plug region formed in the body region of the silicon semiconductor material, wherein the conductive plug region connects a lateral surface of the body region to the top surface of the substrate.

4. 发明专利

AU2003226056A1 COMMON-BASE AMPLIFIER WITH HIGH INPUT OVERLOAD AND/OR TUNABLE TRANSIMPEDANCE 未知
公开(公告)号：AU2003226056A1
公开(公告)日：2003-11-10
申请号：AU2003226056
申请日：2003-04-11
申请人： SIRENZA MICRODEVICES INC
发明人： KOBAYASHI KEVIN W
IPC分类号： H03F1/08 , H03F3/08 , H03F3/343

5. 发明专利

AU2003226197A1 METHOD AND/OR APPARATUS FOR CONTROLLING A COMMON-BASE AMPLIFIER 未知
公开(公告)号：AU2003226197A1
公开(公告)日：2003-11-03
申请号：AU2003226197
申请日：2003-04-02
申请人： SIRENZA MICRODEVICES INC
发明人： KOBAYASHI KEVIN
IPC分类号： H03F3/08

6. 发明专利

DE69938776D1 未知
公开(公告)号：DE69938776D1
公开(公告)日：2008-07-03
申请号：DE69938776
申请日：1999-01-28
申请人： SIRENZA MICRODEVICES INC
发明人： JOHNSON JOSEPH H , D ANNA PABLO E
IPC分类号： H01L29/41 , H01L29/423 , H01L21/768 , H01L23/482 , H01L29/06 , H01L29/417 , H01L29/43 , H01L29/739 , H01L29/78
摘要： A quasi-mesh gate structure (80) for the RF MOS transistor having a conductive plug source-body-backside connection is disclosed. The connection structure uses a conductive plug (82) to connect a source area and a body area of the device with a backside (96). The RF MOS transistor having the quasi-mesh gate structure utilizes significantly shorter feeding gate paths as compared to long feeding gate paths used in prior art RF MOS devices. The RF MOS transistor having the quasi-mesh gate structure can utilize polysilicon gates or silicide gates (86). This results in a simplification of the fabrication process and/or improved performance at high frequencies.

7. 发明专利

AT396501T 未知
公开(公告)号：AT396501T
公开(公告)日：2008-06-15
申请号：AT99904324
申请日：1999-01-28
申请人： SIRENZA MICRODEVICES INC
发明人： JOHNSON JOSEPH , D ANNA PABLO
IPC分类号： H01L29/41 , H01L29/423 , H01L21/768 , H01L23/482 , H01L29/06 , H01L29/417 , H01L29/43 , H01L29/739 , H01L29/78
摘要： A quasi-mesh gate structure (80) for the RF MOS transistor having a conductive plug source-body-backside connection is disclosed. The connection structure uses a conductive plug (82) to connect a source area and a body area of the device with a backside (96). The RF MOS transistor having the quasi-mesh gate structure utilizes significantly shorter feeding gate paths as compared to long feeding gate paths used in prior art RF MOS devices. The RF MOS transistor having the quasi-mesh gate structure can utilize polysilicon gates or silicide gates (86). This results in a simplification of the fabrication process and/or improved performance at high frequencies.

8. 发明专利

AU2003295737A8 Direct coupled distributed amplifier 未知
公开(公告)号：AU2003295737A8
公开(公告)日：2004-06-18
申请号：AU2003295737
申请日：2003-11-19
申请人： SIRENZA MICRODEVICES INC
发明人： KOBAYASHI KEVIN
IPC分类号： H03F3/60 , H03F3/68
摘要： An apparatus comprising an input stage, an output stage, a bias circuit and a feedback circuit. The input stage may be configured to generate a plurality of intermediate signals in response to an input signal. The output stage may be (i) DC coupled to the input stage and (ii) configured to generate an output signal in response to the intermediate signals. The output stage generally comprises a plurality of distributed amplifiers each configured to receive one of the intermediate signals. The bias circuit may be (i) connected between the input stage and the output stage and (ii) configured to adjust an input impedance of the input stage.

9. 发明专利

AU2003231810A1 MICROWAVE FIELD EFFECT TRANSISTOR STRUCTURE ON SILICON CARBIDE SUBSTRATE 未知
公开(公告)号：AU2003231810A1
公开(公告)日：2003-12-12
申请号：AU2003231810
申请日：2003-05-21
申请人： SIRENZA MICRODEVICES INC
发明人： ANNA PABLO E D , JOHNSON JOSEPH H
IPC分类号： H01L21/74 , H01L23/552 , H01L29/06 , H01L29/08 , H01L29/24 , H01L29/417 , H01L29/78 , H01L29/00 , H01L29/76 , H01L29/80 , H01L31/062 , H01L31/112 , H01L31/119
摘要： A microwave transistor structure comprising: (a) a SiC substrate having a top surface; (b) a silicon semiconductor material of a first conductivity type overlaying the top surface of the semiconductor substrate and having a top surface; (c) a conductive gate overlying and insulated from the top surface of the silicon semiconductor material; (d) a channel region of the first conductivity type formed completely within the silicon semiconductor material including a channel dopant concentration; (e) a drain region of the second conductivity type formed in the silicon semiconductor material and contacting the channel region; (f) a body region of the first conductivity type and having a body region dopant concentration formed in the silicon semiconductor material under the conductive gate region; (g) a source region of the second conductivity type and having a source region dopant concentration formed in the silicon semiconductor material within the body region; (h) a shield plate region being adjacent and being parallel to the drain region formed on the top surface of the silicon semiconductor material over a portion of the channel region; wherein the shield plate region is adjacent and parallel to the conductive gate region; and wherein the shield plate extends above the top surface of the silicon semiconductor material to a shield plate height level, and is insulated from the top-surface of the silicon semiconductor material; and (i) a conductive plug region formed in the body region of the silicon semiconductor material to connect a lateral surface of the body region to the top surface of the substrate.

10. 发明专利

AU2002364086A1 MULTIPLE CONDUCTIVE PLUG STRUCTURE FOR LATERAL RF MOS DEVICES 未知
公开(公告)号：AU2002364086A1
公开(公告)日：2003-07-24
申请号：AU2002364086
申请日：2002-12-18
申请人： SIRENZA MICRODEVICES INC
发明人： YAN ALAN , ANNA PABLO E D
IPC分类号： H01L21/74 , H01L21/768 , H01L29/08 , H01L29/417 , H01L29/78 , H01L21/336 , H01L21/338 , H01L21/8234 , H01L21/8238 , H01L23/58 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
摘要： A lateral RF MOS transistor with at least one conductive plug structure comprising: (1) a semiconductor material of a first conductivity type having a first dopant concentration and a top surface; (2) a conductive gate overlying and insulated from the top surface of the semiconductor material; (3) at least two enhanced drain drift regions of the second conductivity type of the RF MOS transistor; the first region laying partially underneath the gate; the second enhanced drain drift region contacting the first enhanced drain drift region, the dopant concentration of the second enhanced drain drift region is higher than the dopant concentration of the first enhanced drain drift region; (4) a drain region of the second conductivity type contacting the second enhanced drain drift region; (5) a body region of said RF MOS transistor of the first conductivity type with the dopant concentration being at least equal to the dopant concentration of the semiconductor epi layer; (6) a source region of the second conductivity type located within the body region; (7) a body contact region of the first conductivity type contacting the body region; and (8) a plug region further comprising at least one conductive plug region, and at least one between-conductive-plug region.

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