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1. 发明授权

US5656540A Semiconductor crystal growing method 失效
标题翻译：半导体晶体生长方法
公开(公告)号：US5656540A
公开(公告)日：1997-08-12
申请号：US411464
申请日：1995-03-28
申请人： Yasuhiko Nomura , Shigeo Goto , Yoshitaka Morishita
发明人： Yasuhiko Nomura , Shigeo Goto , Yoshitaka Morishita
IPC分类号： H01L21/205 , H01L21/20 , H01L21/203 , H01L29/06
CPC分类号： H01L21/02395 , H01L21/02433 , H01L21/02543 , H01L21/02546 , H01L21/0262 , Y10S438/925
摘要： On a surface of a p-type GaAs (111)B substrate 11, a mesa groove is formed along a [211]A direction. TDMAAs as a group V material and TMGa as a group III material are supplied at 8.times.10.sup.-3 Pa and 8.times.10.sup.-4 Pa, respectively, to grow n-type GaAs 13 dominantly on a side surface of a mesa 12. Subsequently, the group V material is changed to metal As. As.sub.4 and MAGa are supplied at 5.times.10.sup.-3 Pa and 8.times.10.sup.-4 Pa, respectively, to grow p-type GaAs 14 only on a side surface of the GaAs 13. Then, the group V material is again changed to TDMAAs. TDMAAs and TMGa are supplied both at 8.times.10.sup.-4 Pa to grow p-type GaAs 15.
摘要翻译：在p型GaAs（111）B基板11的表面上沿[2 + E，ovs 11 + EE] A方向形成台面槽。以8×10 -3 Pa和8×10 -4 Pa分别提供作为V族材料的TDMAAs和作为III族材料的TMGa，以主要在台面12的侧表面上生长n型GaAs 13。材质改为金属As。 As4和MAGa分别以5×10 -3 Pa和8×10 -4 Pa供应，以仅在GaAs 13的侧表面上生长p型GaAs 14。然后，组V材料再次改变为TDMAA。在8×10 -4 Pa下提供TDMAAs和TMGa以生长p型GaAs 15。

2. 发明授权

US5073805A Semiconductor light emitting device including a hole barrier contiguous to an active layer 失效
标题翻译：半导体发光器件包括与有源层相邻的孔垒
公开(公告)号：US5073805A
公开(公告)日：1991-12-17
申请号：US658455
申请日：1991-02-22
申请人： Yoshinori Nomura , Hitoshi Ogata
发明人： Yoshinori Nomura , Hitoshi Ogata
IPC分类号： H01L33/06 , H01S5/062 , H01S5/20 , H01S5/32 , H01S5/34
CPC分类号： H01L33/06 , B82Y20/00 , H01S5/34 , H01S5/06226 , H01S5/2004 , H01S5/2009 , H01S5/3211 , H01S5/3416
摘要： In a semiconductor light emitting device comprising an active layer, a hole barrier layer is formed in contact with a first surface of the active layer to provide a barrier against holes in the active layer. The barrier layer does not provide a barrier against electrons tunnelling therethrough. A low energy band gap layer is formed on the barrier layer to have a conduction band minimum which is lower than the conduction band minimum of the active layer at least in a part adjacent to the barrier layer. First and second electrodes are in ohmic contact with an n-type and a p-type conductivity layers which are formed on the low energy band gap layer and a second surface of the active layer, respectively. Preferably, the p-type conductivity layer comprises an electron barrier layer on the second surface, a waveguide layer formed on the electron barrier layer to have an energy band gap wider than an energy band gap of the active layer, and a remaining layer formed between the waveguide layer and the second electrode to have an energy band gap wider than the emergy band gap of the waveguide layer. The waveguide layer may be removable without losing high speed capability of the laser.
摘要翻译：在包括有源层的半导体发光器件中，形成与有源层的第一表面接触的空穴阻挡层，以提供有源层中的孔的阻挡。阻挡层不提供阻挡电子穿过其的阻挡层。在阻挡层上形成低能带隙层，以至少在与阻挡层相邻的部分中具有低于有源层的导带最小值的导带最小值。第一和第二电极分别与低能带隙层和有源层的第二表面上形成的n型和p型导电层欧姆接触。优选地，p型导电层包括在第二表面上的电子势垒层，形成在电子势垒层上的波导层具有比有源层的能带隙宽的能带隙，以及形成在波导层和第二电极具有比波导层的能量带隙宽的能带宽。波导层可以是可移动的，而不会损失激光器的高速能力。

3. 发明授权

US4994140A Method capable of forming a fine pattern without crystal defects 失效
标题翻译：能够形成没有晶体缺陷的精细图案的方法
公开(公告)号：US4994140A
公开(公告)日：1991-02-19
申请号：US463205
申请日：1990-01-10
申请人： Akita Kenzo , Mototaka Taneya , Yoshimasa Sugimoto , Hiroshi Hidaka
发明人： Akita Kenzo , Mototaka Taneya , Yoshimasa Sugimoto , Hiroshi Hidaka
IPC分类号： H01L21/00 , H01L21/20 , H01L21/203 , H01L21/306 , H01L21/308 , H01L21/311 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/768
CPC分类号： H01L21/76877 , H01L21/02392 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02549 , H01L21/02631 , H01L21/02658 , H01L21/02661 , H01L21/30621 , H01L21/3081 , H01L21/31116 , H01L21/314 , H01L21/31654 , H01L21/3185 , H01L21/67069
摘要： In a method of processing a compound semiconductor wafer to deposit or form a specific layer on a wafer surface, to partially remove the specific layer to partially expose the wafer surface, and to etch a partially exposed area of the wafer, etching is performed by irradiating an electron beam and a specific gas which may be, for example, chlorine gas, bromine gas, iodine, or their compounds. Portions subjected to irradiation of both the electron beam and the specific gas are etched from the wafer. The specific layer is deposited or formed in the form of an oxide layer on the wafer surface by spraying an oxygen gas onto the wafer surface with light irradiated on the wafer surface. Such an oxide layer may be either an adsorbed molecular layer of the oxygen gas or a chemically reacted layer which results from reaction of the oxygen gas with the wafer by the help of irradiation of the light. Alternatively, the specific layer may be either a sulphide layer or a nitride layer. The specific layer and the wafer may be removed and etched by the use of different gases which may be a hydrogen gas and a chlorine gas, respectively. In addition, the above-mentioned processing may be carried out without exposure of the wafer to air by the use of an apparatus which comprises a plurality of rooms or chambers airtightly coupled to one another.
摘要翻译：在化合物半导体晶片处理以沉积或形成晶片表面上的特定层的方法中，为了部分去除特定层以部分地暴露晶片表面，并蚀刻晶片的部分曝光区域，通过照射电子束和特定气体，其可以是例如氯气，溴气，碘或它们的化合物。从晶片上蚀刻经受电子束和特定气体的照射的部分。通过用照射在晶片表面上的光将氧气喷射到晶片表面上，在晶片表面上以氧化物层的形式沉积或形成特定层。这样的氧化物层可以是氧气的吸附分子层或通过借助照射光而使氧气与晶片的反应产生的化学反应层。或者，特定层可以是硫化物层或氮化物层。可以通过使用分别为氢气和氯气的不同气体来去除和蚀刻特定层和晶片。此外，可以通过使用包括彼此气密地联接的多个房间或室的设备来进行上述处理而不将晶片暴露于空气。

4. 发明授权

US5741360A Method of growing a crystal of a compound semiconductor at a low temperature 失效
标题翻译：在低温下生长化合物半导体的晶体的方法
公开(公告)号：US5741360A
公开(公告)日：1998-04-21
申请号：US514229
申请日：1995-08-11
申请人： Shigeo Goto , Yasuhiko Nomura , Yoshitaka Morishita , Seikoh Yoshida , Masahiro Sasaki
发明人： Shigeo Goto , Yasuhiko Nomura , Yoshitaka Morishita , Seikoh Yoshida , Masahiro Sasaki
IPC分类号： C30B25/02 , H01L21/20 , C30B23/04
CPC分类号： H01L21/02463 , C30B25/02 , C30B29/42 , H01L21/02395 , H01L21/02546 , H01L21/0262 , H01L21/02631 , H01L21/02639 , Y10S117/913
摘要： In a method of selectively growing a crystal of a compound semiconductor layer which is composed of gallium and arsenic, a selective growth is selectively carried out on a substrate by using a combination of metallic gallium and a reactive gas, such as trisdimethylminoarsine, which includes a metallic compound of arsenic specified by at least one amine. The combination may includes organometallic gallium, such as trimethylgallium, triethylgallium instead of the metallic gallium. Such a combination serves to selectively deposit the compound semiconductor layer only on an exposed portion uncovered with a mask. Any other compound semiconductor layer may be selectively deposited on the exposed portion. The exposed portion may be composed of GaAs, AlGaAs, or InGaAs.
摘要翻译：在选择性地生长由镓和砷构成的化合物半导体层的晶体的方法中，通过使用金属镓和反应性气体如三甲基氨基胂的组合，在衬底上选择性地进行选择性生长，所述反应性气体包括由至少一种胺指定的金属砷化合物。该组合可以包括有机金属镓，例如三甲基镓，三乙基镓，而不是金属镓。这种组合用于仅将化合物半导体层选择性地沉积在未被掩模覆盖的暴露部分上。任何其它化合物半导体层可以选择性地沉积在暴露部分上。暴露部分可以由GaAs，AlGaAs或InGaAs组成。

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