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1. 发明专利

DE69427536D1 未知
公开(公告)号：DE69427536D1
公开(公告)日：2001-07-26
申请号：DE69427536
申请日：1994-07-15
申请人： NONVOLATILE ELECTRONICS INC
发明人： DAUGHTON M
IPC分类号： G11B5/39 , G11C11/15 , H01F10/32 , H01L43/08 , G11B5/66 , G11B5/127 , G11B5/147 , H01F1/00 , B32B15/00 , B32B15/20 , G01R33/02 , H01F10/08 , G01R33/09
摘要： A composite film on a substrate having a first magnetostrictive, magnetoresistive, anisotropic ferromagnetic thin-film provided on that substrate with a second ferromagnetic thin-film provided immediately thereon which is also magnetorestrictive, magnetoresistive, anisotropic, with a composition differing from the first ferromagnetic thin-film. Various parameters of said first and second ferromagnetic thin-films are selected to provide such a composite film with little or no magnetostriction. Such composite films can be used in various devices.

2. 发明专利

DE69427536T2 未知
公开(公告)号：DE69427536T2
公开(公告)日：2002-04-18
申请号：DE69427536
申请日：1994-07-15
申请人： NONVOLATILE ELECTRONICS INC
发明人： DAUGHTON M
IPC分类号： G11B5/39 , G11C11/15 , H01F10/32 , H01L43/08 , G11B5/66 , G11B5/127 , G11B5/147 , H01F1/00 , B32B15/00 , B32B15/20 , G01R33/02 , H01F10/08 , G01R33/09
摘要： A composite film on a substrate having a first magnetostrictive, magnetoresistive, anisotropic ferromagnetic thin-film provided on that substrate with a second ferromagnetic thin-film provided immediately thereon which is also magnetorestrictive, magnetoresistive, anisotropic, with a composition differing from the first ferromagnetic thin-film. Various parameters of said first and second ferromagnetic thin-films are selected to provide such a composite film with little or no magnetostriction. Such composite films can be used in various devices.

3. 发明专利

CA2269539A1 SPIN DEPENDENT TUNNELING MEMORY 未知
公开(公告)号：CA2269539A1
公开(公告)日：1998-05-14
申请号：CA2269539
申请日：1997-11-07
申请人： NONVOLATILE ELECTRONICS INC
发明人： EVERITT BRENDA A , POHM ARTHUR V , DAUGHTON JAMES M
IPC分类号： G11C11/14 , G11C11/15 , G11C11/16 , G11C11/56 , H01F10/20 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08 , G11C11/00
摘要： A digital data memory having a bit structure (17) in a memory cell based on a dielectric intermediate separating material with two major surfaces having thereon an anisotropic ferromagnetic thin-film of differing thicknesses (12, 13, 13', 12'). These bit structures (17) are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure (22) adjacent corresponding ones of these memory cells is selecting or operating them, or both, in data storage and retrieval operations.

4. 发明专利

AU6121100A Magnetic memory coincident thermal pulse data storage 未知
公开(公告)号：AU6121100A
公开(公告)日：2001-01-09
申请号：AU6121100
申请日：2000-06-16
申请人： NONVOLATILE ELECTRONICS INC
发明人： DAUGHTON JAMES M , POHM ARTHUR V
IPC分类号： G11C11/15 , G11C11/16 , G11C13/00
摘要： A ferromagnetic thin-film based digital memory (FIG. 1) having in a bit structure (17,17') a coupled moment material film (13,14,14',14'') in which magnetic moments of adjacent atoms, ions or molecules are coupled to one another to maintain some alignment thereof below a critical temperature above which such alignment is not maintained, and also having a plurality of word line structures (20) each located across from the coupled moment material film (13,14,14',14'') in a corresponding one of the bit structures (17,17'). The bit structures (17,17') are sufficiently thermally isolated to allow currents in the adjacent word lines (20) and/or the bit structure (17,17') to heat the bit structure (17,17') to approach the critical temperature which may be supplied coincidently and then reduced to cool the bit structure (17,17') while supplying a magnetic field during the cooling.

5. 发明专利

DE69518146D1 未知
公开(公告)号：DE69518146D1
公开(公告)日：2000-08-31
申请号：DE69518146
申请日：1995-01-18
申请人： NONVOLATILE ELECTRONICS INC
发明人： DAUGHTON M
IPC分类号： H01F10/30 , G01R33/09 , G11B5/39 , H01F10/08 , H01F10/32 , H01L21/8246 , H01L27/22 , H01L43/08 , H01L43/10 , H01F1/00 , B32B15/20 , B32B15/18 , B32B9/00 , G11B5/127 , G11B5/33 , G01R33/02
摘要： A magnetoresistive layered structure having on a substrate two or more magnetoresistive, anisotropic ferromagnetic thin-films each two of which are separated by an intermediate layer on a substrate of less than 50 ANGSTROM thickness formed of a substantially nonmagnetic, conductive alloy having two immiscible components therein. A further component to provide temperature stability in some circumstances is to be at least partially miscible in the first two components. Such structures can be formed as a sensor by having them electrically connected together with one positioned in a gap between magnetic material masses and one shielded by one of such masses.

6. 发明专利

CA2261312A1 MAGNETIC CURRENT SENSOR 未知
公开(公告)号：CA2261312A1
公开(公告)日：1998-02-19
申请号：CA2261312
申请日：1997-07-24
申请人： NONVOLATILE ELECTRONICS INC
发明人： HERMANN THEODORE M , BLACK WILLIAM C JR
IPC分类号： G01R33/02 , G01R15/20 , G01R19/00 , G01R33/09 , H01L43/08 , G01R17/12 , G01R15/14
摘要： A current determiner having an output (60) at which representations of input currents are provided including an input conductor (25) for the input current and a current sensor (54) supported on a substrate (10) electrically isolated from one another but with the sensor (54) positioned in the magnetic fields arising about the input conductor (25) due to any input currents. The sensor (54) extends along the substrate (10) in a direction primarily perpendicular to the extent of the input conductor and is formed of at least a pair of thinfilm ferromagnetic layers (12, 13) separated by a non-magnetic conductive layer (14). The sensor (54) can be electrically connected to an electronic circuitry (26-27, 51-52, 58-60) formed in the substrate (10) including a nonlinearity adaptation circuit to provide representations of the input currents of increased accuracy despite nonlinearities in the current sensor (54), and can include further current sensors (54, 55) in bridge circuits.

7. 发明专利

DE69518146T2 未知
公开(公告)号：DE69518146T2
公开(公告)日：2001-03-22
申请号：DE69518146
申请日：1995-01-18
申请人： NONVOLATILE ELECTRONICS INC
发明人： DAUGHTON M
IPC分类号： H01F10/30 , G01R33/09 , G11B5/39 , H01F10/08 , H01F10/32 , H01L21/8246 , H01L27/22 , H01L43/08 , H01L43/10 , H01F1/00 , B32B15/20 , B32B15/18 , B32B9/00 , G11B5/127 , G11B5/33 , G01R33/02
摘要： A magnetoresistive layered structure having on a substrate two or more magnetoresistive, anisotropic ferromagnetic thin-films each two of which are separated by an intermediate layer on a substrate of less than 50 ANGSTROM thickness formed of a substantially nonmagnetic, conductive alloy having two immiscible components therein. A further component to provide temperature stability in some circumstances is to be at least partially miscible in the first two components. Such structures can be formed as a sensor by having them electrically connected together with one positioned in a gap between magnetic material masses and one shielded by one of such masses.

8. 发明专利

AU2897099A Magnetic digital signal coupler 未知
公开(公告)号：AU2897099A
公开(公告)日：1999-09-20
申请号：AU2897099
申请日：1999-03-04
申请人： NONVOLATILE ELECTRONICS INC
发明人： DAUGHTON JAMES M , FAYFIELD ROBERT T , HERMANN THEODORE M , STOKES JOHN F
IPC分类号： G01R15/20 , G01R19/00 , G11B5/39 , H01F10/00 , H01L27/22 , H01L43/08 , H04B5/00 , G01R33/00
摘要： A current determiner having an output at which representations of input currents are provided comprising an input conductor for the input current and a current sensor supported on a substrate electrically isolated from one another but with the sensor positioned in the magnetic fields arising about the input conductor due to any input currents. The sensor extends along the substrate in a direction at an angle to the extent of the input conductor and is formed of at least a pair of thin-film ferromagnetic layers separated by a nonmagnetic layer with one of these two ferromagnetic thin-film layers having a magnetization that is substantially maintained in a selected direction despite the magnetic fields arising from the input currents causing reversals of direction of magnetization of that remaining one of these two ferromagnetic thin-film layers. This first current sensor is spaced apart from the input conductor at least in part by a polymeric electrical insulating material, and the input conductor can be provided on a mechanically stiff base supported on such material and provided with an electric field interrupter supporting such material between the first current sensor and the input conductor. The sensor can be electrically connected to a electronic circuitry formed in the substrate as a monolithic integrated circuit sharing a common reference, and two such monolithic integrated chips in a housing can provide duplex information signal transmission.

9. 发明专利

DE69325459D1 未知
公开(公告)号：DE69325459D1
公开(公告)日：1999-07-29
申请号：DE69325459
申请日：1993-09-21
申请人： NONVOLATILE ELECTRONICS INC
发明人： POHM ARTHUR
IPC分类号： G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08
摘要： A digital memory having a plurality of locations where selectively coincident currents can be selected to flow in a pair of wordline structures, or with a wordline structure paired with a composite line structure (and possibly a bit line structure), to continue an existing, or switch to an opposite, edge magnetization state in a composite line structure or, alternatively, continue or switch a magnetization state in a storage film cell used to magnetically bias such a composite line structure.

10. 发明专利

DE69325459T2 未知
公开(公告)号：DE69325459T2
公开(公告)日：2000-03-02
申请号：DE69325459
申请日：1993-09-21
申请人： NONVOLATILE ELECTRONICS INC
发明人： POHM ARTHUR
IPC分类号： G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08
摘要： A digital memory having a plurality of locations where selectively coincident currents can be selected to flow in a pair of wordline structures, or with a wordline structure paired with a composite line structure (and possibly a bit line structure), to continue an existing, or switch to an opposite, edge magnetization state in a composite line structure or, alternatively, continue or switch a magnetization state in a storage film cell used to magnetically bias such a composite line structure.

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