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1. 发明专利

JP2017085134A メモリ素子およびクロスポイントスイッチと不揮発性ナノチューブブロックとを使用したそのアレイ审中-公开
公开(公告)号：JP2017085134A
公开(公告)日：2017-05-18
申请号：JP2016246351
申请日：2016-12-20
申请人：ナンテロ,インク. , Nantero Inc
发明人： CLAUDE L BERTIN , HUANG X M HENRY , THOMAS RUECKES , RAMESH SIVARAJAN
IPC分类号： H01L27/105 , G11C13/00 , H01L45/00 , H01L49/00 , H01L51/05 , H01L51/30
CPC分类号： H01L51/0587 , B82Y10/00 , G11C11/56 , G11C13/0064 , G11C13/0069 , G11C13/025 , G11C14/00 , G11C17/16 , G11C29/86 , G11C2013/0076 , G11C2213/19 , G11C2213/71 , G11C2213/72 , H01L27/101 , H01L27/1021 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L51/0048
摘要：【課題】不揮発性ナノチューブ素子を使用した不揮発性メモリ素子およびクロスポイントスイッチと、そのアレイとを提供する。【解決手段】上面、下面、および複数の側面を有するナノチューブ素子1020と、ナノチューブ素子1020の上面全体に配置されてこれを実質的に覆う第1の端子1025と、ナノチューブ素子1020の下面の少なくとも一部分と接触する第2の端子1030と、第1および第2の端子1025、1030に電気的刺激を印加することができる制御回路と、を含む。ナノチューブ素子1020は制御回路によって第1および第2の端子1025,1030に印加される、対応する複数の電気的刺激に応じて複数の電子状態を切り替え、それぞれ異なる電子状態に対して、ナノチューブ素子1020は、第1および第2の端子1025、1030間に異なる抵抗の電気経路を提供する。【選択図】図1B

2. 发明专利

CA2608056C TWO-TERMINAL NANOTUBE DEVICES AND SYSTEMS AND METHODS OF MAKING SAME 未知
公开(公告)号：CA2608056C
公开(公告)日：2016-07-26
申请号：CA2608056
申请日：2006-05-09
申请人： NANTERO INC
发明人： GUO FRANK , MEINHOLD MITCHELL , KONSEK STEVEN L , RUECKES THOMAS , HUANG X M HENRY , SIVARAJAN RAMESH , STRASBURG MAX , BERTIN CLAUDE L
IPC分类号： H01L27/00
摘要： A two terminal switching device includes first and second conductive terminals and a nanotube article. The article has at least one nanotube, and overlaps at least a portion of each of the first and second terminals. The device also includes a stimulus circuit in electrical communication with at least one of the first and second terminals. The circuit is capable of applying first and second electrical stimuli to at least one of the first and second terminal(s) to change the relative resistance of the device between the first and second terminals between a relatively high resistance and a relatively low resistance. The relatively high resistance between the first and second terminals corresponds to a first state of the device, and the relatively low resistance between the first and second terminals corresponds to a second state of the device.

3. 发明专利

CA2608106C MEMORY ARRAYS USING NANOTUBE ARTICLES WITH REPROGRAMMABLE RESISTANCE 未知
公开(公告)号：CA2608106C
公开(公告)日：2016-03-29
申请号：CA2608106
申请日：2006-05-09
申请人： NANTERO INC
发明人： BERTIN CLAUDE L , GUO FRANK , RUECKES THOMAS , KONSEK STEVEN L , MEINHOLD MITCHELL , STRASBURG MAX , SIVARAJAN RAMESH , HUANG X M HENRY
IPC分类号： G11C7/10
摘要： A memory array includes a plurality of memory cells, each of which receives a bit line, a first word line, and a second word line. Each memory cell includes a cell selection circuit, which allows the memory cell to be selected. Each memory cell also includes a two-terminal switching device, which includes first and second conductive terminals in electrical communication with a nanotube article. The memory array also includes a memory operation circuit, which is operably coupled to the bit line, the first word line, and the second word line of each cell. The circuit can select the cell by activating an appropriate line, and can apply appropriate electrical stimuli to an appropriate line to reprogrammably change the relative resistance of the nanotube article between the first and second terminals. The relative resistance corresponds to an informational state of the memory cell.

4. 发明专利

CA2454845C NANOTUBE FILMS AND ARTICLES 未知
公开(公告)号：CA2454845C
公开(公告)日：2013-10-01
申请号：CA2454845
申请日：2002-07-25
申请人： NANTERO INC
发明人： RUECKES THOMAS , SEGAL BRENT M
IPC分类号： B82B1/00 , H01B1/04 , B81B3/00 , B82Y30/00 , G11C13/02 , G11C23/00 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L27/10 , H01L27/12 , H01L27/24
摘要： Nanotube films and articles and method of making the same are disclosed. A conductive article (1800) includes an aggregate of nanotube segments in which the nanotube segments (1802) contact other nanotube segments (101) to define a plurality of conductive pathway along the article. The nanotube segments (1802) may be single walled carbon nanotubes, or multi-walled carbon nanotubes. The various segments may have different lengths and may include segments having a length shorter than the length of the article. The articles so formed may be disposed on substrates, and may form an electrical network of nanotubes within the article itself.

5. 发明专利

AU2006287609B2 Method and system of using nanotube fabrics as joule heating elements for memories and other applications 未知
公开(公告)号：AU2006287609B2
公开(公告)日：2012-08-02
申请号：AU2006287609
申请日：2006-09-06
申请人： NANTERO INC
发明人： MEINHOLD MITCHELL , WARD JONATHAN W , SEGAL BRENT M , RUECKES THOMAS
IPC分类号： G11C11/00
摘要： Methods and systems of using nanotube elements as joule heating elements for memories and other applications. Under one aspect, a method includesproviding an electrical stimulus, regulated by a drive circuit, through a nanotube element in order to heat an adjacent article. Further, a detection circuit electrically gauges the state of the article. The article heated by the nanotube element is, in preferred embodiments, a phase changing material, hi memory applications, the invention may be used as a small-scale CRAM capable of employing small amounts of current to induce rapid, large temperature changes in a chalcogenide material. Under various embodiments of the disclosed invention, the nanotube element is composed of a non-woven nanotube fabric which is either suspended from supports and positioned adjacent to the phase change material or is disposed on a substrate and in direct contact with the phase change material. A plurality of designs using various geometric orientations of nanotube fabrics, phase change materials, and drive and detection circuitry is disclosed. Additionally, methods of fabricating nanotube heat emitters are disclosed.

6. 发明专利

CA2570429C RECEIVER CIRCUIT USING NANOTUBE-BASED SWITCHES AND TRANSISTORS 未知
公开(公告)号：CA2570429C
公开(公告)日：2011-09-13
申请号：CA2570429
申请日：2005-05-26
申请人： NANTERO INC
发明人： BERTIN CLAUDE L
IPC分类号： H04B1/16 , G11C13/02
摘要： Receiver circuits using nanotube-based switches and transistors. A receiver circuit includes a differential input having a first and second input link, a differential output having a first and second output link, and first and second switching elements in electrical communication with the input links and the output links. Each switching element has an input node, an output node, a nanotube channel element, and a control structure disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said input node and said output node. First and second MOS transistors are each in electrical communication with a reference signal and with the output node of a corresponding one of the first and second switching elements.

7. 发明专利

AT419676T 未知
公开(公告)号：AT419676T
公开(公告)日：2009-01-15
申请号：AT05856763
申请日：2005-05-26
申请人： NANTERO INC
发明人： BERTIN CLAUDE
IPC分类号： H03K19/20 , H01H59/00
摘要： Hybrid switching devices integrate nanotube switching elements with field effect devices, such as NFETs and PFETs. A switching device forms and unforms a conductive channel from the signal input to the output subject to the relative state of the control input. In embodiments of the invention, the conductive channel includes a nanotube channel element and a field modulatable semiconductor channel element. The switching device may include a nanotube switching element and a field effect device electrically disposed in series. According to one aspect of the invention, an integrated switching device is a four-terminal device with a signal input terminal, a control input terminal, a second input terminal, and an output terminal. The devices may be non-volatile. The devices can form the basis for a hybrid NT-FET logic family and can be used to implement any Boolean logic circuit.

8. 发明专利

CA2608065A1 NON-VOLATILE SHADOW LATCH USING A NANOTUBE SWITCH 未知
公开(公告)号：CA2608065A1
公开(公告)日：2007-01-04
申请号：CA2608065
申请日：2006-05-09
申请人： NANTERO INC
发明人： RUECKES THOMAS , BERTIN CLAUDE L , GUO FRANK , STRASBURG MAX , HUANG X M HENRY , SIVARAJAN RAMESH , MEINHOLD MITCHELL , KONSEK STEVEN L
IPC分类号： G11C14/00
摘要： A non- volatile memory cell includes a volatile storage device that stores a corresponding logic state in response to electrical stimulus; and a shadow memory device coupled to the volatile storage device. The shadow memory devi ce receives and stores the corresponding logic state in response to electrical stimulus. The shadow memory device includes a non- volatile nanotube switch that stores the corresponding state of the shadow device.

9. 发明专利

CA2581248A1 RANDOM ACCESS MEMORY INCLUDING NANOTUBE SWITCHING ELEMENTS 未知
公开(公告)号：CA2581248A1
公开(公告)日：2006-12-28
申请号：CA2581248
申请日：2005-09-20
申请人： NANTERO INC
发明人： SEGAL BRENT M , BERTIN CLAUDE L , RUECKES THOMAS
IPC分类号： G01H1/00

10. 发明专利

CA2570486A1 INTEGRATED NANOTUBE AND FIELD EFFECT SWITCHING DEVICE 未知
公开(公告)号：CA2570486A1
公开(公告)日：2006-07-27
申请号：CA2570486
申请日：2005-05-26
申请人： NANTERO INC
发明人： BERTIN CLAUDE L
IPC分类号： H03K19/20
摘要： Hybrid switching devices integrate nanotube switching elements with field effect devices, such as NFETs and PFETs. A switching device forms and unforms a conductive channel from the signal input to the output subject to the relative state of the control input. In embodiments of the invention, the conductive channel includes a nanotube channel element and a field modulatable semiconductor channel element. The switching device may include a nanotube switching element and a field effect device electrically disposed in series. According to one aspect of the invention, an integrated switching device is a four-terminal device with a signal input terminal, a control input terminal, a second input terminal, and an output terminal. The devices may be non-volatile. The devices can form the basis for a hybrid NT-FET logic family and can be used to implement any Boolean logic circuit.

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