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1. 发明申请

US20130295403A1 SYSTEMS AND METHODS FOR INGOT GRINDING 有权
标题翻译：用于烧结的系统和方法
公开(公告)号：US20130295403A1
公开(公告)日：2013-11-07
申请号：US13875662
申请日：2013-05-02
申请人： MEMC SINGAPORE PTE. LTD. (UEN200614794D)
发明人： James A. Hicks , Nicholas R. Mercurio
IPC分类号： B24B9/06 , C01B33/02
CPC分类号： B24B9/06 , C01B33/02 , C30B29/06 , C30B33/00 , Y10T428/12236 , Y10T428/12285
摘要： A method of grinding an ingot for use in manufacturing a semiconductor or solar wafer is disclosed. The method includes providing an ingot including four flat sides and four rounded corner portions, each corner portion extending between an adjacent pair of the flat sides, and grinding a plurality of planar facets on each corner portion, each planar facet of the corner portion joined to an adjacent facet at a juncture and oriented such that each corner portion has a substantially arcuate shape. A wafer and ingot are also disclosed.
摘要翻译：公开了一种用于制造半导体或太阳能晶片的锭的研磨方法。该方法包括提供包括四个平坦侧面和四个圆角部分的锭，每个拐角部分在相邻的一对平坦侧面之间延伸，并且在每个拐角部分上研磨多个平面小面，角部分的每个平面小面连接到在接合处的相邻小面并且定向成使得每个拐角部分具有基本上弓形的形状。还公开了一种晶片和锭。

2. 发明申请

US20130102129A1 PROCESSES FOR SUPPRESSING MINORITY CARRIER LIFETIME DEGRADATION IN SILICON WAFERS 有权
标题翻译：阻止少量运载火箭降解硅氧烷的方法
公开(公告)号：US20130102129A1
公开(公告)日：2013-04-25
申请号：US13486463
申请日：2012-06-01
申请人： Robert J. Falster , Vladimir V. Voronkov
发明人： Robert J. Falster , Vladimir V. Voronkov
IPC分类号： H01L21/322
CPC分类号： H01L29/16 , H01L21/3221 , H01L31/1804 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： Processes for suppressing minority carrier lifetime degradation in silicon wafers are disclosed. The processes involve quench cooling the wafers to increase the density of nano-precipitates in the silicon wafers and the rate at which interstitial atoms are consumed by the nano-precipitates.
摘要翻译：公开了抑制硅晶片中的少数载流子寿命劣化的方法。该方法包括骤冷冷却晶片以增加硅晶片中的纳米沉淀物的密度以及间隙原子被纳米沉淀物消耗的速率。

3. 发明授权

US08969119B2 Processes for suppressing minority carrier lifetime degradation in silicon wafers 有权
标题翻译：抑制硅晶片中少数载流子寿命衰退的方法
公开(公告)号：US08969119B2
公开(公告)日：2015-03-03
申请号：US13486463
申请日：2012-06-01
申请人： Robert J. Falster , Vladimir V. Voronkov
发明人： Robert J. Falster , Vladimir V. Voronkov
IPC分类号： H01L31/18 , H01L21/322
CPC分类号： H01L29/16 , H01L21/3221 , H01L31/1804 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： Processes for suppressing minority carrier lifetime degradation in silicon wafers are disclosed. The processes involve quench cooling the wafers to increase the density of nano-precipitates in the silicon wafers and the rate at which interstitial atoms are consumed by the nano-precipitates.
摘要翻译：公开了抑制硅晶片中的少数载流子寿命劣化的方法。该方法包括骤冷冷却晶片以增加硅晶片中的纳米沉淀物的密度以及间隙原子被纳米沉淀物消耗的速率。

4. 发明申请

US20130295513A1 Susceptor For Directional Solidification Furnace 审中-公开
标题翻译：定向凝固炉的受体
公开(公告)号：US20130295513A1
公开(公告)日：2013-11-07
申请号：US13464290
申请日：2012-05-04
申请人： Lee William Ferry
发明人： Lee William Ferry
IPC分类号： F27D5/00
CPC分类号： C30B11/002 , C30B11/003
摘要： A susceptor supports a crucible in a furnace and includes a first wall having a vertical edge and a second wall having a vertical edge. A first interlocking member is on the vertical edge of the first wall and a second interlocking member is on the vertical edge of the second wall. The first interlocking member is interlocked with the second interlocking member when the first wall and second wall are in an assembled configuration. Openings are disposed through the first interlocking member and the second interlocking member. Each of the openings through the first interlocking member is coaxial with each of the openings through the second interlocking member.
摘要翻译：感受器在炉中支撑坩埚，并且包括具有垂直边缘的第一壁和具有垂直边缘的第二壁。第一互锁构件位于第一壁的垂直边缘上，第二互锁构件位于第二壁的垂直边缘上。当第一壁和第二壁处于组装构型时，第一互锁构件与第二互锁构件互锁。开口通过第一互锁构件和第二互锁构件设置。通过第一互锁构件的每个开口通过第二互锁构件与每个开口同轴。

5. 发明申请

US20120252950A1 COATING COMPOSITIONS 有权
标题翻译：涂料组合物
公开(公告)号：US20120252950A1
公开(公告)日：2012-10-04
申请号：US13473347
申请日：2012-05-16
申请人： Richard J. Phillips , Steven L. Kimbel , Aditya J. Deshpande , Gang Shi
发明人： Richard J. Phillips , Steven L. Kimbel , Aditya J. Deshpande , Gang Shi
IPC分类号： C09D129/14 , C08K5/05
CPC分类号： C30B11/002 , C04B35/584 , C04B35/6269 , C04B35/6342 , C04B35/63488 , C04B2235/3217 , C04B2235/3225 , C04B2235/3418 , C04B2235/656 , C04B2235/721 , C30B15/10 , C30B29/06 , C30B35/002 , Y10T428/24
摘要： Silicon nitride coated crucibles for holding melted semiconductor material and for use in preparing multicrystalline silicon ingots by a directional solidification process; methods for coating crucibles; methods for preparing silicon ingots and wafers; compositions for coating crucibles and silicon ingots and wafers with a low oxygen content.
摘要翻译：用于保持熔融的半导体材料并用于通过定向凝固工艺制备多晶硅锭的氮化硅涂覆的坩埚; 涂装坩埚的方法; 制备硅锭和晶圆的方法; 用于涂覆具有低氧含量的坩埚和硅锭和晶片的组合物。

6. 发明授权

US08784561B2 Method of adjusting insulation in a directional solidification furnace 有权
标题翻译：定向凝固炉中绝缘调整方法
公开(公告)号：US08784561B2
公开(公告)日：2014-07-22
申请号：US13532096
申请日：2012-06-25
申请人： Rituraj Nandan , Benjamin Michael Meyer , Lee William Ferry
发明人： Rituraj Nandan , Benjamin Michael Meyer , Lee William Ferry
IPC分类号： C30B11/00 , C30B28/08
CPC分类号： F27D1/0033 , C30B11/003 , C30B29/06 , F27B14/10 , Y10T29/49718
摘要： Methods are disclosed for inhibiting heat transfer through lateral sidewalls of a support member positioned beneath a crucible in a directional solidification furnace. The methods include the use of insulation positioned adjacent the lateral sidewalls of the support member. The insulation inhibits heat transfer through the lateral sidewalls of the support member to ensure the one-dimensional transfer of heat from the melt through the support member.
摘要翻译：公开了用于抑制通过位于定向凝固炉内的坩埚下方的支撑构件的侧壁的热传递的方法。这些方法包括使用邻近支撑构件的侧壁的绝缘体。绝缘体阻止通过支撑构件的侧壁的热传递，以确保来自熔体的热量通过支撑构件的一维传递。

7. 发明授权

US08528740B2 Methods to recover and purify silicon particles from saw kerf 有权
标题翻译：从锯片回收和纯化硅颗粒的方法
公开(公告)号：US08528740B2
公开(公告)日：2013-09-10
申请号：US13272847
申请日：2011-10-13
申请人： Alexis Grabbe , Tracy M. Ragan
发明人： Alexis Grabbe , Tracy M. Ragan
IPC分类号： B07C5/02
CPC分类号： B03D1/02 , B01D21/0009 , B03C1/288 , B03C2201/20 , B03D1/085 , B08B3/08 , B24B27/06 , B24B55/12 , B28D5/007 , C10M175/005 , C10M175/02 , C10M2203/1006 , C10M2209/1045 , Y02P70/179
摘要： The present disclosure generally relates to methods for recovering silicon from saw kerf, or an exhausted abrasive slurry, resulting from the cutting of a silicon ingot, such as a single crystal or polycrystalline silicon ingot. More particularly, the present disclosure relates to methods for isolating and purifying silicon from saw kerf or the exhausted slurry, such that the resulting silicon may be used as a raw material, such as a solar grade silicon raw material.
摘要翻译：本公开内容一般涉及从切割硅锭（例如单晶或多晶硅锭）而产生的锯切屑或用尽的磨料浆料回收硅的方法。更具体地说，本公开涉及从锯切或排出的浆料中分离和纯化硅的方法，使得所得的硅可以用作原料，例如太阳能级硅原料。

8. 发明申请

US20130193559A1 CAST SILICON ingot prepared BY DIRECTIONAL SOLIDIFICATION 审中-公开
标题翻译： CAST硅胶锭由方向固化制备
公开(公告)号：US20130193559A1
公开(公告)日：2013-08-01
申请号：US13360144
申请日：2012-01-27
申请人： Jihong Chen
发明人： Jihong Chen
IPC分类号： H01L29/30
CPC分类号： H01L31/028 , C30B11/002 , C30B11/14 , H01L31/03682 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A cast silicon crystalline ingot comprises two major generally parallel surfaces, one of which is the front surface and the other of which is the back surface; a perimeter surface connecting the front surface and the back surface; and a bulk region between the front surface and the back surface; wherein the cast silicon crystalline ingot has no transverse dimension less than about five centimeters; the cast silicon crystalline ingot has a dislocation density of less than 1000 dislocations/cm2. Wafers sliced from the cast silicon crystalline ingot have solar cell efficiency of at least 17.5% and light induced degradation no greater than 0.2%.
摘要翻译：铸造硅晶锭包括两个主要的大致平行的表面，其中一个是前表面，另一个是后表面; 连接前表面和后表面的周边表面; 以及前表面和后表面之间的主体区域; 其中所述铸造硅晶锭的横向尺寸不小于约5厘米; 铸硅晶锭的位错密度小于1000位错/ cm2。从铸硅晶锭切片的晶片具有至少17.5％的太阳能电池效率和光诱导的降解不大于0.2％。

9. 发明申请

US20130026469A1 SILICON WAFERS AND INGOTS WITH REDUCED OXYGEN CONTENT AND METHODS FOR PRODUCING THEM 审中-公开
标题翻译：具有减少氧含量的硅氧化物及其制造方法及其生产方法
公开(公告)号：US20130026469A1
公开(公告)日：2013-01-31
申请号：US13648065
申请日：2012-10-09
申请人： MEMC Singapore Pte. Ltd. (UEN200614794D)
发明人： Richard J. Phillips , Steven L. Kimbel , Aditya J. Deshpande , Gang Shi
IPC分类号： H01L29/04
CPC分类号： C30B11/002 , C04B35/584 , C04B35/6269 , C04B35/6342 , C04B35/63488 , C04B2235/3217 , C04B2235/3225 , C04B2235/3418 , C04B2235/656 , C04B2235/721 , C30B15/10 , C30B29/06 , C30B35/002 , Y10T428/24
摘要： Silicon nitride coated crucibles for holding melted semiconductor material and for use in preparing multicrystalline silicon ingots by a directional solidification process; methods for coating crucibles; methods for preparing silicon ingots and wafers; compositions for coating crucibles and silicon ingots and wafers with a low oxygen content.
摘要翻译：用于保持熔融的半导体材料并用于通过定向凝固工艺制备多晶硅锭的氮化硅涂覆的坩埚; 涂装坩埚的方法; 制备硅锭和晶圆的方法; 用于涂覆具有低氧含量的坩埚和硅锭和晶片的组合物。

10. 发明申请

US20120285373A1 Feed Tool For Shielding A Portion Of A Crystal Puller 有权
标题翻译：用于屏蔽一部分水晶拉拔器的进给工具
公开(公告)号：US20120285373A1
公开(公告)日：2012-11-15
申请号：US13103554
申请日：2011-05-09
申请人： Benjamin Michael Meyer , Hariprasad Sreedharamurthy , Steven Lawrence Kimbel
发明人： Benjamin Michael Meyer , Hariprasad Sreedharamurthy , Steven Lawrence Kimbel
IPC分类号： C30B15/30 , C30B15/10
CPC分类号： C30B15/00 , C30B15/02 , C30B15/14 , C30B15/20 , C30B29/06 , Y10T117/10 , Y10T117/1016 , Y10T117/1024 , Y10T117/1032 , Y10T117/1056 , Y10T117/1068
摘要： A crystal puller for melting silicon and forming a single crystal ingot and a feed tool for shielding a portion of the crystal puller during charging of the crystal puller are disclosed herein. The crystal puller includes a crucible for containing molten silicon. The feed tool includes a cylinder and a plate. The cylinder has an inner surface and an annular ledge formed in a portion of the inner surface. The cylinder has a diameter at the annular ledge that is less than a diameter of the cylinder at the inner surface. The plate is positioned on the annular ledge and includes a first section separate from a second section. The first section and the second section are operable to move laterally with respect to each other. The plate has a central opening formed in at least one of the first section and the second section.
摘要翻译：本文公开了用于熔化硅并形成单晶锭的晶体拉出器和用于在晶体拉出器的充电期间屏蔽一部分晶体拉出器的馈电工具。晶体拉出器包括用于容纳熔融硅的坩埚。进给工具包括圆筒和板。气缸具有形成在内表面的一部分中的内表面和环形凸缘。圆柱体在环形凸缘处具有小于内表面处圆柱体的直径的直径。板被定位在环形凸缘上，并且包括与第二部分分开的第一部分。第一部分和第二部分可操作以相对于彼此横向移动。该板具有形成在第一部分和第二部分中的至少一个中的中心开口。

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