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1. 发明申请

WO2017044909A1 HYPERSPECTRAL OPTICAL ELEMENT FOR MONOLITHIC DETECTORS 审中-公开
标题翻译：用于单片式检测器的高分辨光学元件
公开(公告)号：WO2017044909A1
公开(公告)日：2017-03-16
申请号：PCT/US2016/051186
申请日：2016-09-10
申请人： L-3 COMMUNICATIONS CINCINNATI ELECTRONICS CORPORATION
发明人： BARTOSEWCZ, Michael , VAN HOOREBEKE, Tristan , HENRY, Phillip, Michael , SARTO, Anthony, William
IPC分类号： H01L31/0232 , B28B21/42 , G01J3/50 , H01L21/00 , H01L27/144
CPC分类号： G01J3/26 , B28B21/42 , G01J3/12 , G01J3/28 , G01J3/2823 , G01J2003/123 , G01J2003/2826 , G02B5/201 , G02B5/28 , H01L27/14621 , H01L27/14625 , H01L27/14634 , H01L27/14649
摘要： A hyperspectral optical element for monolithic detectors is provided. In one embodiment, for example a hyperspectral optical element includes a faceplate layer adapted to be mounted on top of a monolithic detector. The faceplate layer comprises a reflective inner surface. A notched layer includes a plurality of notched surfaces and is mounted to the faceplate layer. The notched surfaces oppose the reflective inner surface of the faceplate and define a plurality of variable depth cavities between the reflective inner surface of the faceplate layer and the plurality of notched surfaces of the notched layer. The faceplate layer and the notched layer are substantially transparent to a received signal and the plurality of variable depth cavities provides resonant cavities for one or more wavelengths of the received signal.
摘要翻译：提供了用于单片检测器的高光谱光学元件。在一个实施例中，例如，高光谱光学元件包括适于安装在单片检测器顶部上的面板层。面板层包括反射内表面。缺口层包括多个缺口表面并且安装到面板层。凹口表面与面板的反射内表面相对，并且在面板层的反射内表面和缺口层的多个缺口表面之间限定多个可变深度腔。面板层和缺口层对接收信号基本上是透明的，并且多个可变深度腔为接收信号的一个或多个波长提供谐振腔。

2. 发明申请

WO2014200586A2 SYSTEM AND METHOD FOR CONVERTING AN IMAGE TO AN INTENSITY BASED COLORMAP 审中-公开
标题翻译：将图像转换为基于强度的色彩的系统和方法
公开(公告)号：WO2014200586A2
公开(公告)日：2014-12-18
申请号：PCT/US2014/027547
申请日：2014-03-14
申请人： L-3 COMMUNICATIONS CINCINNATI ELECTRONICS CORPORATION
发明人： MCCLANAHAN, Stephen
IPC分类号： H04N1/46 , H04N1/56
CPC分类号： G09G5/02 , G06T11/60 , G09G2340/14 , H04N5/33
摘要： The systems and methods described herein disclose creating an Intensity Based Colormap by interweaving different Hues between two end points (e.g., black and white) with increasing Luminance. An Intensity Based Colormap may be used to convert Computer Input image data using a Computer Machine encoded with an Intensity Based Colormap.
摘要翻译：本文所述的系统和方法公开了通过增加亮度在两个端点（例如，黑色和白色之间）交织不同色调来创建基于强度的色彩映射。基于强度的色彩映射可以使用使用基于强度的色彩映射编码的计算机进行转换。

3. 发明申请

WO2014165790A1 SELF-CENTERING ELECTROMAGNETIC TRANSDUCERS 审中-公开
标题翻译：自中心电磁传感器
公开(公告)号：WO2014165790A1
公开(公告)日：2014-10-09
申请号：PCT/US2014/033020
申请日：2014-04-04
申请人： L-3 COMMUNICATIONS CINCINNATI ELECTRONICS CORPORATION
发明人： FIEDLER, Andreas
IPC分类号： H02K1/06
CPC分类号： H02K33/16 , H02K35/02
摘要： Self-centering electromagnetic transducers, such as linear motors and generators, are disclosed. In one embodiment, an electromagnetic transducer includes an outer yoke made of a ferromagnetic material, and a coil assembly including a plurality of loops of electrically conductive wire, wherein the coil assembly is substantially surrounded by the outer yoke. The electromagnetic transducer further includes a magnet, and an inner yoke made of ferromagnetic material. The magnet is disposed within the outer yoke such that the coil assembly surrounds the magnet. The inner yoke is disposed within the magnet, and the magnet is free to translate. The electromagnetic transducer further includes at least one high-reluctance zone positioned within the outer yoke and/or the inner yoke. In some embodiments, the electromagnetic transducer includes one or more actuators that vary a width of one or more high-reluctance zones to change a spring rate of the electromagnetic transducer.
摘要翻译：公开了诸如线性电机和发电机的自定心电磁换能器。在一个实施例中，电磁换能器包括由铁磁材料制成的外磁轭以及包括多个导电线环的线圈组件，其中线圈组件基本上被外磁轭包围。电磁换能器还包括磁铁和由铁磁材料制成的内磁轭。磁体设置在外磁轭内，使得线圈组件围绕磁体。内轭设置在磁体内，磁体自由平移。电磁换能器还包括位于外磁轭和/或内磁轭内的至少一个高磁阻区。在一些实施例中，电磁换能器包括一个或多个致动器，其改变一个或多个高磁阻区域的宽度以改变电磁换能器的弹簧刚度。

4. 发明申请

WO2013040184A1 FRONTSIDE-ILLUMINATED BARRIER INFRARED PHOTODETECTOR DEVICE AND METHODS OF FABRICATING THE SAME 审中-公开
标题翻译： FRONTSIDE-ILLUMINATED BARRIER INFREDED PHOTODETECTOR DEVICE AND METHODS OF FABRICATING THE SAME
公开(公告)号：WO2013040184A1
公开(公告)日：2013-03-21
申请号：PCT/US2012/055125
申请日：2012-09-13
申请人： L-3 COMMUNICATIONS CINCINNATI ELECTRONICS CORPORATION , JONES, Robert, A. , FORRAI, David , RAWE, Richard, L., Jr.
发明人： JONES, Robert, A. , FORRAI, David , RAWE, Richard, L., Jr.
IPC分类号： H01L27/146
CPC分类号： H01L27/146 , B82Y20/00 , H01L27/14634 , H01L27/1465 , H01L27/1467 , H01L27/1469 , H01L27/14694 , H01L31/0232 , H01L31/03046 , H01L31/035236 , H01L31/101 , Y02E10/544
摘要： Frontside-illuminated barrier infrared photodetector devices and methods of fabrication are disclosed. In one embodiment, a frontside- illuminated barrier infrared photodetector (100) includes a transparent carrier substrate (122), and a plurality of pixels (130). Each pixel of the plurality of pixels includes an absorber layer (135), a barrier layer (134) on the absorber layer, a collector layer (133) on the barrier layer, and a backside electrical contact coupled to the absorber layer. Each pixel has a frontside and a backside. The absorber layer and the barrier layer are non-continuous across the plurality of pixels, and the barrier layer of each pixel is closer to a scene than the absorber layer of each pixel. A plurality of frontside common electrical contacts (120) is coupled to the frontside of the plurality of pixels, wherein the frontside of the plurality of pixels and the plurality of frontside common electrical contacts are bonded to the transparent carrier substrate (122).
摘要翻译：公开了前照射屏障红外光电检测器件及其制造方法。在一个实施例中，前照射屏障红外光电检测器（100）包括透明载体衬底（122）和多个像素（130）。多个像素的每个像素包括吸收层（135），吸收层上的阻挡层（134），阻挡层上的集电极层（133）和耦合到吸收层的背面电接触。每个像素都有前端和背面。吸收层和阻挡层在多个像素之间是不连续的，并且每个像素的势垒层比每个像素的吸收层更靠近场景。多个正面公共电触点（120）耦合到多个像素的前侧，其中多个像素的前侧和多个前侧公共电触点被接合到透明载体基板（122）。

5. 发明公开

EP2933845A2 TUNNELING BARRIER INFRARED DETECTOR DEVICES 审中-公开
标题翻译： INFRAROTDETEKTOREN，DIE AUF EINER TUNNELBARRIERE BASIEREN
公开(公告)号：EP2933845A2
公开(公告)日：2015-10-21
申请号：EP15163706.3
申请日：2015-04-15
申请人： L-3 Communications Cincinnati Electronics Corporation
发明人： Wei, Yajun
IPC分类号： H01L31/101 , H01L31/0352
CPC分类号： H01L31/035263 , H01L31/022408 , H01L31/03046 , H01L31/035209 , H01L31/035236 , H01L31/035272 , H01L31/101 , H01L31/1013 , H01L31/109 , H01L31/1844 , Y02E10/544
摘要： Infrared detector devices incorporating a tunneling structure are disclosed. The infrared detector device includes a first contact layer (110), an absorber layer (120) adjacent to the first contact layer, and a tunneling structure (133) including a barrier layer (130) adjacent to the absorber layer (120) and a second contact layer (140) adjacent to the barrier layer. The barrier layer has a tailored valence band offset such that a valence band offset of the barrier layer at the interface between the absorber layer and the barrier layer is substantially aligned with the valence band offset of the absorber layer, and the valence band offset of the barrier layer at the interface between the barrier layer and the second contact layer is above a conduction band offset of the second contact layer (140). Such infrared detector devices have a low dark current, low required bias voltage and a high operating temperature.
摘要翻译：公开了结合隧道结构的红外检测器装置。红外检测器装置包括第一接触层（110），与第一接触层相邻的吸收层（120）和包括邻近吸收层（120）的阻挡层（130）的隧道结构（133）与所述阻挡层相邻的第二接触层（140）。阻挡层具有定制的价带偏移，使得阻挡层在吸收层和阻挡层之间的界面处的价带偏移基本上与吸收层的价带偏移对准，并且在阻挡层和第二接触层之间的界面处的阻挡层高于第二接触层（140）的导带偏移。这种红外检测器件具有低暗电流，低所需偏置电压和高工作温度。

6. 发明公开

EP2802018A2 Diode barrier infrared detector devices and superlattice barrier structures 审中-公开
标题翻译：二极管势垒红外检测器件和超晶格屏障结构
公开(公告)号：EP2802018A2
公开(公告)日：2014-11-12
申请号：EP14167441.6
申请日：2014-05-07
申请人： L-3 Communications Cincinnati Electronics Corporation
发明人： Wei, Yajun
IPC分类号： H01L31/101 , H01L31/0352
CPC分类号： H01L31/035236 , H01L31/02005 , H01L31/03046 , H01L31/101 , Y02E10/544
摘要： Diode barrier infrared detector devices and superlattice barrier structures are disclosed. In one embodiment, a diode barrier infrared detector device (100) includes a first contact layer (110), an absorber layer (120) adjacent to the first contact layer, and a barrier layer (130) adjacent to the absorber layer, and a second contact layer (140) adjacent to the barrier layer. The barrier layer includes a diode structure formed by a p-n junction (137) formed within the barrier layer. The barrier layer may be such that there is substantially no barrier to minority carrier holes. In another embodiment, a diode barrier infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, a barrier layer adjacent to the absorber layer, and a diode structure adjacent to the barrier layer. The diode structure includes a second contact layer. The diode structure formed within or adjacent to the barrier layer provides for a built-in electric field for close to zero bias optical turn on and limits the depletion region within the barrier layer within small bias range.

7. 发明公开

EP2802018A3 Diode barrier infrared detector devices and superlattice barrier structures 审中-公开
标题翻译： Diodenbarrieren-Infrarotdetechtorvorrichtung undÜbergitter-Barrierenstrukturen
公开(公告)号：EP2802018A3
公开(公告)日：2015-04-29
申请号：EP14167441.6
申请日：2014-05-07
申请人： L-3 Communications Cincinnati Electronics Corporation
发明人： Wei, Yajun
IPC分类号： H01L31/101 , H01L31/0352 , H01L31/0304
CPC分类号： H01L31/035236 , H01L31/02005 , H01L31/03046 , H01L31/101 , Y02E10/544
摘要： Diode barrier infrared detector devices and superlattice barrier structures are disclosed. In one embodiment, a diode barrier infrared detector device (100) includes a first contact layer (110), an absorber layer (120) adjacent to the first contact layer, and a barrier layer (130) adjacent to the absorber layer, and a second contact layer (140) adjacent to the barrier layer. The barrier layer includes a diode structure formed by a p-n junction (137) formed within the barrier layer. The barrier layer may be such that there is substantially no barrier to minority carrier holes. In another embodiment, a diode barrier infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, a barrier layer adjacent to the absorber layer, and a diode structure adjacent to the barrier layer. The diode structure includes a second contact layer. The diode structure formed within or adjacent to the barrier layer provides for a built-in electric field for close to zero bias optical turn on and limits the depletion region within the barrier layer within small bias range.
摘要翻译：公开了二极管屏障红外探测器和超晶格屏障结构。在一个实施例中，二极管屏障红外检测器装置（100）包括第一接触层（110），与第一接触层相邻的吸收层（120）和与吸收层相邻的阻挡层（130）与所述阻挡层相邻的第二接触层（140）。阻挡层包括由形成在阻挡层内的p-n结（137）形成的二极管结构。阻挡层可以使得对少数载流子孔基本上没有阻挡。在另一个实施例中，二极管屏障红外检测器件包括第一接触层，与第一接触层相邻的吸收层，与吸收层相邻的阻挡层，以及与阻挡层相邻的二极管结构。二极管结构包括第二接触层。形成在阻挡层内或邻近势垒层的二极管结构为接近零偏压的光导通提供了内置的电场，并且在小的偏置范围内限制了阻挡层内的耗尽区。

8. 发明公开

EP2819180A2 Superlattice structures for unipolar infrared detector devices 审中-公开
标题翻译： Übergitter-Strukturenfürunipolare Infrarot-Detektoren
公开(公告)号：EP2819180A2
公开(公告)日：2014-12-31
申请号：EP14173917.7
申请日：2014-06-25
申请人： L-3 Communications Cincinnati Electronics Corporation
发明人： Wei, Yajun
IPC分类号： H01L31/101 , H01L31/0352
CPC分类号： H01L31/035236 , H01L31/03046 , H01L31/101 , Y02E10/544
摘要： Embodiments of strain-balanced superlattice infrared detector devices and their fabrication are disclosed. In one embodiment, an infrared detector device (100) includes a first contact layer (110), an absorber superlattice region (120), a wider gap unipolar barrier region (130), and a second contact layer (140). The absorber superlattice region has a period (121) defined by a first InAs layer (122), strain-balancing structure (124), a second InAs layer (126), and an InAsSb layer (128). The strain-balancing structure (124) comprises an arbitrary alloy layer sequence containing at least one constituent element of aluminum or phosphor, e.g. InGaAs, AlInAs, InAsP. In another embodiment, the absorber superlattice region has a period defined by a first InAs layer, first strain-balancing structure, a second InAs layer, a first GaSb layer, a second strain-balancing structure, and a second GaSb layer. The first strain-balancing structure includes at least one constituent element of aluminum or phosphor, e.g. InGaAs, AlInAs, InAsP. The second strain-balancing structure includes GaInSb and GaSb.
摘要翻译：公开了应变平衡超晶格红外检测器件及其制造的实施例。在一个实施例中，红外检测器装置（100）包括第一接触层（110），吸收体超晶格区域（120），较宽的间隙单极性阻挡区域（130）和第二接触层（140）。吸收体超晶格区具有由第一InAs层（122），应变平衡结构（124），第二InAs层（126）和InAsSb层（128）限定的周期（121）。应变平衡结构（124）包括含有至少一种铝或磷光体构成元素的任意合金层序列。 InGaAs，AlInAs，InAsP。在另一个实施例中，吸收体超晶格区域具有由第一InAs层，第一应变平衡结构，第二InAs层，第一GaSb层，第二应变平衡结构和第二GaSb层限定的周期。第一应变平衡结构包括铝或磷光体的至少一种构成元素， InGaAs，AlInAs，InAsP。第二应变平衡结构包括GaInSb和GaSb。

9. 发明申请

US20180076345A1 Tunneling Barrier Infrared Detector Devices 审中-公开
公开(公告)号：US20180076345A1
公开(公告)日：2018-03-15
申请号：US15807913
申请日：2017-11-09
申请人： L-3 Communications Cincinnati Electronics Corporation
发明人： Yajun Wei
IPC分类号： H01L31/0352 , H01L31/109 , H01L31/0224 , H01L31/0304
CPC分类号： H01L31/035263 , H01L31/022408 , H01L31/03046 , H01L31/032 , H01L31/035209 , H01L31/035236 , H01L31/035272 , H01L31/072 , H01L31/101 , H01L31/1013 , H01L31/109 , H01L31/1844 , Y02E10/544
摘要： Embodiments of the present disclosure are directed to infrared detector devices incorporating a tunneling structure. In one embodiment, an infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a tunneling structure including a barrier layer adjacent to the absorber layer and a second contact layer adjacent to the barrier layer. The barrier layer has a tailored valence band offset such that a valence band offset of the barrier layer at the interface between the absorber layer and the barrier layer is substantially aligned with the valence band offset of the absorber layer, and the valence band offset of the barrier layer at the interface between the barrier layer and the second contact layer is above a conduction band offset of the second contact layer.

10. 发明授权

US09887307B2 Diode barrier infrared detector devices and barrier superlattice structures 有权
公开(公告)号：US09887307B2
公开(公告)日：2018-02-06
申请号：US15334877
申请日：2016-10-26
申请人： L-3 COMMUNICATIONS CINCINNATI ELECTRONICS CORPORATION
发明人： Yajun Wei
IPC分类号： H01L31/0352 , H01L31/101 , H01L31/0304 , H01L31/02
CPC分类号： H01L31/035236 , H01L31/02005 , H01L31/03046 , H01L31/101 , Y02E10/544
摘要： Diode barrier infrared detector devices and superlattice barrier structures are disclosed. In one embodiment, a diode barrier infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a barrier layer adjacent to the absorber layer, and a second contact layer adjacent to the barrier layer. The barrier layer includes a diode structure formed by a p-n junction formed within the barrier layer. The barrier layer may be such that there is substantially no barrier to minority carrier holes. In another embodiment, a diode barrier infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, a barrier layer adjacent to the absorber layer, and a diode structure adjacent to the barrier layer. The diode structure includes a second contact layer.

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