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    • 3. 发明申请
    • APPARATUS AND METHOD FOR INSPECTING A SAMPLE OF A SPECIMEN BY MEANS OF AN ELECTRON BEAM
    • 通过电子束检测样品样品的装置和方法
    • WO2004097378A1
    • 2004-11-11
    • PCT/EP2004/004402
    • 2004-04-26
    • ICT, INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBHFEUERBAUM, Hans-Peter
    • FEUERBAUM, Hans-Peter
    • G01N1/32
    • G01N1/32H01J37/28H01J37/3056H01J2237/20H01J2237/31745
    • The invention refers to an apparatus (10) for inspecting a sample (12) of a specimen (14) by means of an electron beam (34) comprising a vacuum chamber (18); an ion beam device (20) for generating an ion beam (22) used for etching a sample (12) from the specimen (14) within said vacuum chamber (18); an electron beam device (30) having a scanning unit (32) for scanning the electron beam (34) across said specimen (14) within said vacuum chamber (18); said electron beam device (30) having a first detector (36) positioned to detect electrons (38) that are released from the specimen (14) in a backward direction with respect to the direction of the electron beam (34); and said electron beam device (30) having a second detector (40) positioned to detect electrons (42) that are released from the sample (12) of the specimen (14) in a forward direction with respect to the direction of the electron beam (34); and separation means (50; 52) within said vacuum chamber (18) to separate the sample (12) from the specimen (14) for the inspection of the sample (12) by means of the second detector (40). With the apparatus according to the invention, it is possible to perfom a transmission inspection of a sample of a specimen, e.g. a thin slice of a semiconductor wafer, at a high throughput at comparably low costs.
    • 本发明涉及一种用于通过包括真空室(18)的电子束(34)检查试样(14)的样品(12)的装置(10)。 用于产生用于在所述真空室(18)内从样品(14)蚀刻样品(12)的离子束(22)的离子束装置(20); 具有扫描单元(32)的电子束装置(30),用于在所述真空室(18)内扫过所述试样(14)上的电子束(34)。 所述电子束装置(30)具有第一检测器(36),所述第一检测器(36)定位成检测相对于所述电子束(34)的方向在从所述样本(14)向后方释放的电子(38) 并且所述电子束装置(30)具有第二检测器(40),所述第二检测器(40)定位成检测相对于电子束的方向从样品(14)的样品(12)向前方释放的电子(42) (34); 以及在所述真空室(18)内的分离装置(50; 52),以将样品(12)与样品(14)分离,以便通过第二检测器(40)检查样品(12)。 利用根据本发明的装置,可以对试样的样品进行透射检查,例如, 半导体晶片的薄片,在相当低的成本下处于高产量。
    • 8. 发明申请
    • CHARGED PARTICLE BEAM SYSTEM AND METHOD OF OPERATING THEREOF
    • 充电颗粒束系统及其操作方法
    • WO2014202532A1
    • 2014-12-24
    • PCT/EP2014/062570
    • 2014-06-16
    • ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH
    • FROSIEN, JürgenCOOK, Benjamin John
    • H01J37/147H01J37/153H01J37/26
    • H01J37/045H01J37/1478H01J37/153H01J37/263H01J2237/1534H01J2237/281H01J2237/2815
    • A charged particle beam device is described. The charged particle beam device includes a charged particle beam source (12) for emitting a charged particle beam, and a switchable multi-aperture (26) for generating two or more beam bundles (21a, 21b) from the charged particle beam, wherein the switchable multi-aperture includes: two or more aperture openings, wherein each of the two or more aperture openings is provided for generating a corresponding beam bundle of the two or more beam bundles; a beam blanker arrangement (226) configured for individually blanking the two or more beam bundles; and a stopping aperture (227) for blocking beam bundles, which are blanked off by the beam blanker arrangement. The device further includes a control unit electrically connected to the beam blanker arrangement and configured to control the individual blanking of the two or more beam bundles for switching of the switchable multi-aperture and an objective lens (18) configured for focusing the two or more beam bundles on a specimen (19) or wafer, wherein the two or more beam bundles are tilted with respect to the specimen or wafer depending on the position of each of the two or more beam bundles relative to an optical axis defined by the objective lens, and wherein the objective lens is configured for focusing the charged particle beam source, a virtual source provided by the charged particle beam source or a crossover.
    • 描述带电粒子束装置。 带电粒子束装置包括用于发射带电粒子束的带电粒子束源(12)和用于从带电粒子束产生两个或更多束束(21a,21b)的可切换多孔(26),其中 可切换的多孔径包括:两个或更多个孔口,其中两个或更多个孔径开口中的每一个被设置用于产生两个或更多个束束的对应的束束; 光束消除器布置(226),其被配置为单独地消隐所述两个或更多束束; 以及用于阻挡束束的停止孔(227),其被光束消除器布置消隐。 该装置还包括电连接到光束消隐装置并被配置为控制用于切换可切换多孔径的两个或更多束束的单独消隐的控制单元和被配置用于聚焦两个或多个 束(束)在样本(19)或晶片上,其中根据两个或多个束束中的每一个相对于由物镜限定的光轴的位置,两束或更多束束相对于样本或晶片倾斜 ,并且其中所述物镜被配置为聚焦所述带电粒子束源,由所述带电粒子束源提供的虚拟源或交叉。
    • 10. 发明申请
    • APPARATUS AND METHOD FOR CONTROLLING THE BEAM CURRENT OF A CHARGED PARTICLE BEAM
    • 用于控制充电颗粒束的光束电流的装置和方法
    • WO2004088709A1
    • 2004-10-14
    • PCT/EP2004/003329
    • 2004-03-29
    • ICT, INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBHSELLMAIR, Josef
    • SELLMAIR, Josef
    • H01J37/317
    • H01J37/243B82Y10/00B82Y40/00H01J37/3023H01J37/3174H01J2237/06341H01J2237/31774H01J2237/31796
    • An apparatus for producing a beam of charged particles is provided, which comprises an emitter (1, 2) and a switching device (3) adapted to switch between first, second and third beam current levels, wherein the beam current at said first current level is suitable for writing a pixel of an image on the surface of a sample, the beam current at said second current level is suitable for not writing a pixel on the surface of said sample, and the beam current at said third current level is lower than the beam current at the second current level. Furthermore, a method of controlling the beam current of a charged particle beam is provided, comprising the steps of switching the beam current of said charged particle beam between first and second current levels, wherein the beam current at said first current level is suitable for writing a pixel of an image on the surface of a sample and the beam current at said second current level is suitable for not writing a pixel on the surface of said sample, and switching the beam current to a third voltage level, wherein the beam current at said third current level is lower than the beam current at the second current level.
    • 提供一种用于产生带电粒子束的装置,其包括适于在第一,第二和第三束电流水平之间切换的发射极(1,2)和开关装置(3),其中所述第一电流电平 适合于在样品的表面上写入图像的像素,所述第二电流水平的束电流适于不在所述样品的表面上写入像素,并且所述第三电流水平的束电流低于 束电流处于第二电流电平。 此外,提供了一种控制带电粒子束的束电流的方法,包括以下步骤:将所述带电粒子束的束电流切换在第一和第二电流水平之间,其中所述第一电流水平的束电流适于写入 在样品表面上的图像的像素和在所述第二电流电平处的束电流适合于不在所述样品的表面上写入像素,并且将束电流切换到第三电压电平,其中, 所述第三电流水平低于在第二电流水平的束电流。