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    • 4. 发明申请
    • A METHOD AND SYSTEM FOR DEFINING GENE HUNTING STUDIES
    • 一种定义基因检测研究的方法和系统
    • WO2003019451A1
    • 2003-03-06
    • PCT/IE2002/000129
    • 2002-09-02
    • HITACHI LIMITEDSIEVERS, Fabian
    • SIEVERS, Fabian
    • G06F19/00
    • G06F19/18
    • The invention relates to a method for defining or controlling a gene hunting study which is used to determine certain genetic data. The invention provides computerised methods and systems for the theoretical generation of patient data for use in gene hunting studies. Essentially, what is done is to specify the loci to have an initial population specifying the loci of reference markers and the locus of at least one test locus by way of a target reference which corresponds to what is postulated to be the locus where a mutation may be causing a particular disease. Equally, it may be a trait which is caused by the presence of a gene at the test locus. The recombination fraction is obtained between all the loci and with this initial data, a test population of individuals is generated. This then has a theoretical patient population having the disease or trait. This theoretical patient population can then be used to allow an initial assessment of the gene hunting studies. For example, the theoretical patient population can be used to carry out the gene hunting study and the results of the gene hunting study on the theoretical population can then be used to specify and define actual gene hunting studies. The invention can also be used to test the efficacy of gene hunting studies.
    • 本发明涉及用于定义或控制用于确定某些遗传数据的基因寻踪研究的方法。 本发明提供用于理论产生患者数据以用于基因寻踪研究的计算机化方法和系统。 基本上,做出的是指定基因座以具有指定参考标记基因座和至少一个测试基因座的基因座的初始种群,通过目标参照,该参考对应于被假设为突变位点的位点 引起特定的疾病。 同样地,它可能是由在测试基因座上存在基因引起的特征。 在所有基因座之间获得重组分数,并且利用该初始数据,产生个体的测试群体。 这样就有一个具有疾病或性状的理论患者群体。 然后可以将这一理论患者人群用于初步评估基因狩猎研究。 例如,理论患者人群可用于进行基因寻踪研究,然后可以将理论人群的基因狩猎研究结果用于指定和定义实际的基因狩猎研究。 本发明也可以用于测试基因狩猎研究的功效。
    • 10. 发明申请
    • THIN-FILM TRANSISTOR SUBSTRATE, METHOD OF PRODUCING THE SAME, LIQUID CRYSTAL DISPLAY PANEL, AND LIQUID CRYSTAL DISPLAY DEVICE
    • 薄膜晶体管基板,其制造方法,液晶显示面板和液晶显示装置
    • WO1991002999A1
    • 1991-03-07
    • PCT/JP1990001039
    • 1990-08-13
    • HITACHI LIMITEDYAMAMOTO, HideakiMATSUMARU, HaruoTANAKA, YasuoTSUTSUI, KenTSUKADA, ToshihisaSHIRAHASHI, KazuoSASANO, AkiraMATSUKAWA, Yuka
    • HITACHI LIMITED
    • G02F01/136
    • G02F1/136286G02F1/1345G02F1/136213H01L29/4908H01L2924/0002H01L2924/00
    • A thin-film transistor substrate of the active matrix drive type, a method of producing the same, a method of anodic oxidation, a liquid crystal display panel made by using said substrate, a liquid crystal display device, and particularly a structure that serves to improve the characteristics and production thereof. Gate terminals are composed of Cr or Ta, and the gate wirings extending therefrom, gate electrodes and thin-film capacitors (additional capacitors, storage capacitors) are composed of a metal containing aluminum. Further, the anodically oxidized film of the above metal without defects is used for at least any one of the gate insulating film, dielectric film of thin-film capacitors, or interlayer insulating film of the wiring intersections. More preferably, the anodically oxidized film is used for all of the gate insulating film, dielectric film of thin-film capacitors and interlayer insulating film of the wiring intersections. The invention further relates to a method of selectively forming the anodically oxidized film on the aluminum pattern. That is, the method of anodically oxidizing aluminum wherein when a mask for selective oxidation is to be formed using the positive-type photoresist on desired regions of the aluminum pattern, the angle ( THETA ) between the mask for selective oxidation and the aluminum pattern is set to be THETA >/= 110 - 20T (T: thickness of positive-type photoresist).
    • 有源矩阵驱动型的薄膜晶体管基板,其制造方法,阳极氧化方法,使用所述基板制成的液晶显示面板,液晶显示装置,特别是用于 改善其特点和生产。 栅极端子由Cr或Ta构成,从其延伸的栅极布线,栅电极和薄膜电容器(附加电容器,存储电容器)由含铝的金属构成。 此外,上述没有缺陷的金属的阳极氧化膜用于栅极绝缘膜,薄膜电容器的电介质膜或布线交叉点的层间绝缘膜中的至少一个。 更优选地,阳极氧化膜用于所有栅极绝缘膜,薄膜电容器的电介质膜和布线交叉点的层间绝缘膜。 本发明还涉及在铝图案上选择性地形成阳极氧化膜的方法。 也就是说,铝的阳极氧化方法,其中当在铝图案的所需区域上使用正型光致抗蚀剂形成用于选择性氧化的掩模时,用于选择性氧化的掩模与铝图案之间的角度(THETA)是 设置为THETA> / = 110 - 20T(T:正型光刻胶的厚度)。