专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

DE4116036C2 未知
公开(公告)号：DE4116036C2
公开(公告)日：1993-08-05
申请号：DE4116036
申请日：1991-05-16
申请人： GOLDSTAR ELECTRON CO., LTD., CHEONGJU, KR
发明人： YONG-KWAN, KIM, ANYANG, KR
IPC分类号： H04N5/217 , H04N5/335 , H04N5/357 , H04N5/376

2. 发明专利

DE4027699C2 未知
公开(公告)号：DE4027699C2
公开(公告)日：1993-02-18
申请号：DE4027699
申请日：1990-08-31
申请人： GOLDSTAR ELECTRON CO., LTD., CHEONGJU, KR
发明人： CHO, DONG SOO, ANYANG, KR
IPC分类号： H03K7/08 , G06F7/62
摘要： A PWM circuit of programmable subframe system includes a control circuit 20 for generating control signals Cm-CO according to the number of subframes, a PWM data register 60 for storing PWM data, a comparison/correction circuit 40 for determining the sequence of connections of the counter and then comparing the value of a counter 30 with the value of the register 60 to generator overflows under the control of the control signals and also simultaneously generate correction signals, a counter 30 for determining the seqence of connections by the circuit 40 and counting-up to return th e overflows to the circuit 40, a CMP OR Gate 70 for OR operating the correction signals generated in the circuit 40, a modulator 50 for setting and resetting the output and giving correction output.

3. 发明专利

DE4033670C2 未知
公开(公告)号：DE4033670C2
公开(公告)日：1992-10-22
申请号：DE4033670
申请日：1990-10-23
申请人： GOLDSTAR ELECTRON CO., LTD., CHUNGCHEONGBUKDO, KR
发明人： SONG, YOUNG WON, SEOUL/SOUL, KR
IPC分类号： H04N5/922 , G11B20/06 , H03G5/22
摘要： A feed-back type emphasis circuit is disclosed which comprises an input amplifier, a low pass filter, an output amplifier and a feed-back amplifier. The input amplifier receives an input through its positive terminal, and the low pass filter receives the output of the input amplifier, and supplies its output to both the output amplifier and the feed-back amplifier. The output amplifier receives the output of the low pass filter and the input from the outside, while the feed-back amplifier receives both the output of the low pass filter and the input from the outside, with the polarities of its input terminals being shiftable correspondingly with the system specification of the set. The feedback amplifier includes a differential amplifier with adjustable gain and balance for two inputs, whereby the amount of emphasis can be adjusted and the circuit of the present invention can satisfy any specification, thus no new circuit is required when the specification is changed.

4. 发明授权

EP0430815B1 Driving methods and driving circuits for sensorless brushless DC motor 失效
标题翻译：的方法和电路，用于驱动无刷DC马达没有传感器。
公开(公告)号：EP0430815B1
公开(公告)日：1994-09-28
申请号：EP90403418.8
申请日：1990-11-30
申请人： GOLDSTAR CO. LTD. , GOLDSTAR ELECTRON CO., LTD
发明人： Min, Byung Hoon , Park, Seung Kyoon
IPC分类号： H02P6/02
CPC分类号： H02P6/10 , H02P6/182 , H02P6/30

5. 发明公开

EP0430815A1 Driving methods and driving circuits for sensorless brushless DC motor 失效
标题翻译：的方法和电路，用于驱动无刷DC马达没有传感器。
公开(公告)号：EP0430815A1
公开(公告)日：1991-06-05
申请号：EP90403418.8
申请日：1990-11-30
申请人： GOLDSTAR CO. LTD. , GOLDSTAR ELECTRON CO., LTD
发明人： Min, Byung Hoon , Park, Seung Kyoon
IPC分类号： H02P6/02
CPC分类号： H02P6/10 , H02P6/182 , H02P6/30
摘要： A sensorless and brushless DC motor in which phase-corresponding coils are turned on at an electric angle of 180° to increase the maximum speed, less torque ripple is produced to increase the rotational torque by using position detection signals, turn-on signals, charge/discharge control signals, a turn-off decision signal, turn-off signals.
The driving circuit of DC motor comprises comparators for outputting position detection signals, comparators for outputting turn-on signals, power transistors for turning on phase-corresponding coils, a rotation direction control section, a charge/discharge control section, a charge/discharge section, a turn-off signal generating section, transistors for forcedly turning off the power transistors. The circuits is applicable to motors that require precise servo properties and is capable of obtaining a double speed function in a product such a DC motor-used headphone-type stereophonic product.
摘要翻译：无传感器和无刷直流电动机，其中，对应的相线圈被在导通以180°电角度，以增加的最大速度，较小的转矩脉动产生通过使用位置检测用信号，以增加的旋转扭矩，开启信号，电荷 /放电控制信号，关断判断信号关断信号。 DC电动机的驱动电路包括用于输出铃声接通信号，功率晶体管为导通对应的相线圈，旋转方向控制部，充电/放电控制部，充电/放电部分，用于输出铃声位置检测信号的比较器，比较器中，关断信号生成部，用于强制地关断功率晶体管的晶体管。电路适用于马达也需要精确的伺服特性，并且能够在一个productssuch获得一个双速功能的直流电动机使用的耳机型立体声产物。

6. 发明授权

US5878247A Automatic data backup apparatus for microcomputer 失效
标题翻译：微机自动数据备份装置
公开(公告)号：US5878247A
公开(公告)日：1999-03-02
申请号：US899597
申请日：1997-07-24
申请人： Dong-Soo Cho
发明人： Dong-Soo Cho
IPC分类号： G06F11/22 , G06F3/00 , G06F11/14 , G06F11/26 , G06F11/28
CPC分类号： G06F11/1461 , G06F11/261
摘要： An improved automatic data backup apparatus for a microcomputer capable of automatically backing up a user's program at a central processing unit(CPU), which includes a central processing unit(CPU) for performing a user program and a monitor program outputted from a first emulator input/output circuit and a data/address bus; a second emulator input/output circuit for outputting a register signal applied thereto and for inputting/outputting a data between a register data bus connected to an emulator and a backup register bus; and a data backup storing circuit for automatically backing up a data stored in a register of the CPU corresponding to a user program performed in the CPU in accordance with a monitor program request signal outputted from the second emulator input/output circuit, a register signal, a register recording signal, and a register judgement signal and for applying a data stored in a register in the CPU corresponding to a user program which is changed by a backed-up monitor program.
摘要翻译：一种用于能够在中央处理单元（CPU）处自动备份用户程序的微型计算机的自动数据备份装置，其包括用于执行用户程序的中央处理单元（CPU）和从第一仿真器输入输出的监视程序 /输出电路和数据/地址总线; 用于输出施加到其上的寄存器信号并用于在连接到仿真器的寄存器数据总线与备用寄存器总线之间输入/输出数据的第二仿真器输入/输出电路; 以及数据备份存储电路，用于根据从第二仿真器输入/输出电路输出的监视程序请求信号自动备份存储在与CPU执行的用户程序相对应的CPU的寄存器中的数据，寄存器信号，寄存器记录信号和寄存器判断信号，并且用于将存储在CPU中的寄存器中的数据应用于与被备份的监视程序改变的用户程序相对应的数据。

7. 发明授权

US5834816A MOSFET having tapered gate electrode 失效
标题翻译： MOSFET具有锥形栅电极
公开(公告)号：US5834816A
公开(公告)日：1998-11-10
申请号：US816009
申请日：1997-03-10
申请人： Seong Jin Jang
发明人： Seong Jin Jang
IPC分类号： H01L29/78 , H01L21/285 , H01L21/336 , H01L21/768 , H01L29/423 , H01L29/76 , H01L23/48 , H01L29/94 , H01L31/062
CPC分类号： H01L29/66606 , H01L21/28518 , H01L21/76889 , H01L29/42376 , H01L2924/0002 , Y10S148/117
摘要： A MOSFET comprising a gate oxide layer on a silicon substrate, a polysilicon gate formed on the gate oxide layer, the length of which gradually widens going from bottom to top, a side gate oxide layer formed by an oxidation process surrounding the polysilicon gate, the side gate oxide layer also gradually widening from bottom to top, a source/drain region beside the gate oxide layer, a connection element having a stacked structure of a polysilicon and/or polycide layer on the field oxide, a doped polysilicon side wall beside the side gate oxide layer and making electric connection between the source/drain region and the connection element.
摘要翻译：一种MOSFET，包括在硅衬底上的栅极氧化层，形成在栅极氧化物层上的多晶硅栅极，其长度从底部到顶部逐渐变宽，通过围绕多晶硅栅极的氧化工艺形成的侧栅氧化层，侧栅极氧化物层也从底部向上逐渐变宽，在栅极氧化物层旁边的源极/漏极区域，在场氧化物上具有多晶硅和/或多晶硅化物层的堆叠结构的连接元件，旁边的掺杂多晶硅侧壁并且在源极/漏极区域和连接元件之间形成电连接。

8. 发明授权

US5703505A Signal reception apparatus having automatic level selection function 失效
标题翻译：具有自动电平选择功能的信号接收装置
公开(公告)号：US5703505A
公开(公告)日：1997-12-30
申请号：US369456
申请日：1995-01-06
申请人： Ki Jo Kwon
发明人： Ki Jo Kwon
IPC分类号： H04B15/00 , H03K5/08 , H03K5/22
CPC分类号： H03K5/082
摘要： A signal reception apparatus has an automatic level selection function. A comparing circuit compares a level of an input signal with a plurality of sensing levels and outputs a plurality of sensing signals in accordance with the compared result. An auto select level controller receives the plurality of sensing signals from the comparing circuit and selects one of the plurality of sensing levels in response to the plurality of sensing signals. The auto select level controller includes a plurality of flip flop stages. Each of the plurality of flip flop stages has a plurality of flip flops connected in series and is coupled to a corresponding one of the plurality of sensing signals from the comparing circuit. A circuit receives the output signals from the plurality of flip flop stages and selects one of the plurality of sensing levels in response to the inputted sensing signals.
摘要翻译：信号接收装置具有自动电平选择功能。比较电路将输入信号的电平与多个感测电平进行比较，并根据比较结果输出多个感测信号。自动选择电平控制器从比较电路接收多个感测信号，并响应于多个感测信号选择多个感测电平中的一个。自动选择电平控制器包括多个触发器级。多个触发器级中的每一个具有串联连接的多个触发器，并且被耦合到来自比较电路的多个感测信号中的对应的一个触发器。电路接收来自多个触发器级的输出信号，并响应于所输入的感测信号选择多个感测电平中的一个。

9. 发明授权

US5681760A Method for manufacturing thin film transistor 失效
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US5681760A
公开(公告)日：1997-10-28
申请号：US367813
申请日：1995-01-03
申请人： Min Hwa Park
发明人： Min Hwa Park
IPC分类号： H01L21/20 , H01L21/336 , H01L29/786 , H01L21/225
CPC分类号： H01L29/78696 , H01L21/2022 , H01L29/66765 , H01L29/78621 , H01L29/78678
摘要： A method for manufacturing a thin film transistor is disclosed. To solve the problems of leakage current generated at the grain boundary which passes through a source and a drain and the difficulty in obtaining stable device characteristic owing to the change of the lengths of the channel region and the offset region according to the degree of the overlay misalignment, the method includes the steps of forming a polysilicon layer on a substrate, forming an impurity-containing layer on the polysilicon layer, forming a prescribed pattern by patterning the impurity-containing layer, flowing the impurity-containing layer by heat treating, and crystallizing the polysilicon layer by annealing using a prescribed light source, wherein the flowed impurity-containing layer functions a lens during crystallizing the polysilicon layer to generate a partial temperature difference between the portion of the polysilicon layer where the impurity-containing layer is formed and the portion of the polysilicon layer where the impurity-containing layer is not formed.
摘要翻译：公开了一种制造薄膜晶体管的方法。为了解决在通过源极和漏极的晶界处产生的漏电流的问题以及由于沟道区域和偏移区域的长度的变化而导致的难以获得稳定的器件特性，该方法包括以下步骤：在衬底上形成多晶硅层，在多晶硅层上形成含杂质层，通过图案化杂质含量层，通过热处理使含杂质层流动，形成规定图案;以及通过使用规定的光源进行退火来使多晶硅层结晶，其中流动的含杂质层在结晶多晶硅层期间起作用，从而在形成含杂质层的多晶硅层的部分和不形成含杂质层的多晶硅层的部分。

10. 发明授权

US5650957A Semiconductor memory cell and process for formation thereof 失效
标题翻译：半导体存储单元及其形成工艺
公开(公告)号：US5650957A
公开(公告)日：1997-07-22
申请号：US730256
申请日：1996-10-15
申请人： Jong Moo Choi
发明人： Jong Moo Choi
IPC分类号： H01L27/10 , H01L21/8242 , H01L27/108 , H01L27/12 , G11C11/404
CPC分类号： H01L27/1082 , H01L27/1203
摘要： A semiconductor memory cell and a process for formation thereof is disclosed. A capacitor is disposed below a transistor, so that a DRAM cell that may be suitable for a high density semiconductor device is produced. A semiconductor device according to the present invention includes: a buried capacitor consisting of a storage electrode, a dielectric layer and a plate electrode formed on a substrate in a planar form; and a transistor formed above the capacitor, a source/drain region of the transistor being connected to the storage electrode of the capacitor.
摘要翻译：公开了一种半导体存储单元及其形成工艺。电容器设置在晶体管的下方，从而制造可适用于高密度半导体器件的DRAM单元。根据本发明的半导体器件包括：由平面形式形成在基板上的存储电极，电介质层和平板电极组成的埋入电容器; 以及形成在电容器上方的晶体管，晶体管的源极/漏极区域连接到电容器的存储电极。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式