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1. 发明公开

KR20100096002A Movable body driving device 审中-公开
标题翻译：可移动身体驾驶装置
公开(公告)号：KR20100096002A
公开(公告)日：2010-09-01
申请号：KR20100005084
申请日：2010-01-20
申请人： FUJI ELECTRIC SYSTEMS CO LTD
发明人： KITABATA ATSUSHI
IPC分类号： B60J5/08 , B60J5/00 , B60J5/04
CPC分类号： E05F15/635 , E05F15/655 , E05Y2900/51 , F16H19/04 , Y10T74/18056
摘要： PURPOSE: A drive device for a moving body is provided to shortly fix the whole length of the device by freely arranging first and second linear moving bodies. CONSTITUTION: A drive device for a moving body comprises first and second linear moving bodies(22,23), a drive pinion(25), a rotary actuator, and a driven pinion(27). The first and second linear moving bodies are freely arranged in a longitudinal direction of a rack pinion receiving case(21). The rotary actuator integrally forms a first rotary body in one end of an output shaft. The driven pinion linearly moves the first and second linear moving bodies. The drive pinion reversely moves the first and second linear moving bodies moved by the driven pinion.
摘要翻译：目的：提供一种用于移动体的驱动装置，用于通过自由地布置第一和第二直线移动体来短时间地固定装置的整个长度。构成：用于移动体的驱动装置包括第一和第二直线移动体（22,23），驱动小齿轮（25），旋转致动器和从动小齿轮（27）。第一和第二直线移动体沿齿条小齿轮接收壳体（21）的纵向方向自由布置。旋转执行器在输出轴的一端整体形成第一旋转体。从动小齿轮线性移动第一和第二直线移动体。驱动小齿轮使由从动小齿轮移动的第一和第二线性移动体反向移动。

2. 发明申请

WO2011052197A1 SWITCHING POWER SUPPLY CIRCUIT AND POWER FACTOR CONTROLLER 审中-公开
标题翻译：切换电源电路和功率因数控制器
公开(公告)号：WO2011052197A1
公开(公告)日：2011-05-05
申请号：PCT/JP2010/006347
申请日：2010-10-27
申请人： FUJI ELECTRIC SYSTEMS CO., LTD. , SUGAWARA, Takato
发明人： SUGAWARA, Takato
IPC分类号： H02M3/155 , H02M7/12
CPC分类号： H02M3/156 , H02M1/4225 , Y02B70/126
摘要： The switching power supply circuit includes a full-wave rectifier (1) which full-wave rectifies alternating power-supply voltage to output a pulsating current, and an inductor (3) connected to the full-wave rectifier (1). A level conversion circuit (20) includes a plurality of resistors connected in series, and converts inductor current detection voltage to a first current level signal and a second current level signal (S1 and S2) which are different in voltage level and which are proportional to inductor current. A continuous control setting circuit (30) generates a reference potential signal a phase of which is approximately the same as a phase of alternating input voltage from the first current level signal (S1) and compares a voltage level of the reference potential signal with a voltage level of the second current level signal (S2) to output a second set pulse (S8) that specifies timing at which a switching element (4) turns on.
摘要翻译：开关电源电路包括全波整流器（1），全波整流交流电源电压以输出脉动电流，以及连接到全波整流器（1）的电感器（3）。电平转换电路（20）包括串联连接的多个电阻器，并将电感器电流检测电压转换成电压电平不同并与电压电平成正比的第一电流电平信号（S1和S2）电感电流。连续控制设定电路（30）生成与第一电流电平信号（S1）的交流输入电压的相位大致相同的基准电位信号，将基准电位信号的电压电平与电压第二电流电平信号（S2）的电平，以输出指定开关元件（4）导通的定时的第二设定脉冲（S8）。

3. 发明申请

WO2011040005A1 POWER SUPPLY SYSTEM, CONTROLLER THEREFOR, AND METHOD OF MANUFACTURE OF CONTROLLER 审中-公开
标题翻译：电源系统，控制器及其控制器的制造方法
公开(公告)号：WO2011040005A1
公开(公告)日：2011-04-07
申请号：PCT/JP2010/005843
申请日：2010-09-29
申请人： Fuji Electric Systems Co., Ltd. , YAMADAYA, Masayuki
发明人： YAMADAYA, Masayuki
IPC分类号： H02M3/155 , H02J1/00
CPC分类号： H02J1/102 , H02J1/14 , H02M1/084 , H02M3/1584 , H02M2003/1586
摘要： A power supply system of the present invention aims to achieve optimization of the efficiency and therefore includes: z (z is a natural number equal to or larger than 2) power supplies (PS-1 to PS-z) connected in parallel; and a controller (8) for the number of power supplies in operation which controls the number of power supplies in operation among the power supplies (PS-1 to PS-z). The controller (8) for the number of power supplies in operation determines the number of the power supplies in operation based on values of intersection currents i 1 to i (z-1) which are determined through processes of: identifying output loss characteristics with respect to load currents of the z power supplies (PS-1 to PS-z) by use of convex functions f1 to fz, respectively; obtaining a function h n expressing a conversion efficiency of a total load current at the time of operating the n (n is a natural number equal to or smaller than z) power supplies (PS-1 to PS-z) based on the functions f1 to fz; and obtaining an intersection current i q (q is a natural number equal to or smaller than (z-1)) which is a current of an intersection point between a function h q and a function h (q+1) . (Greek letter eta is replaced with h.)
摘要翻译：本发明的供电系统旨在实现效率的优化，因此包括：并联连接的z（z是等于或大于2的自然数）电源（PS-1至PS-z）; 以及用于控制在电源（PS-1至PS-z）之间的操作中的电源的数量的操作中的电源的数量的控制器（8）。用于操作的电源数量的控制器（8）基于通过以下过程确定的交叉电流i1至i（z-1）的值确定运行中的电源的数量：确定相对于分别通过使用凸函数f1至fz来z电源（PS-1至PS-z）的负载电流; 基于函数f1至...，获得表示操作n（n是等于或小于z的自然数）电源（PS-1至PS-z）时的总负载电流的转换效率的函数hn FZ; 得到作为函数hq和函数h（q + 1）的交点的电流的交叉电流iq（q是等于或小于（z-1）的自然数）。（希腊字母eta被替换为h）

4. 发明申请

WO2011018882A1 SEMICONDUCTOR MODULE AND COOLING UNIT 审中-公开
标题翻译：半导体模块和冷却单元
公开(公告)号：WO2011018882A1
公开(公告)日：2011-02-17
申请号：PCT/JP2010/004791
申请日：2010-07-28
申请人： FUJI ELECTRIC SYSTEMS CO., LTD. , GOHARA, Hiromichi , MOROZUMI, Akira , HIGUCHI, Keiichi
发明人： GOHARA, Hiromichi , MOROZUMI, Akira , HIGUCHI, Keiichi
IPC分类号： H01L23/473
CPC分类号： H01L23/473 , H01L23/3735 , H01L2224/32225 , H01L2924/1305 , H01L2924/13055 , H01L2924/00
摘要： A semiconductor module including a cooling unit by which a fine cooling effect is obtained is provided. A plurality of cooling flow paths (21c) which communicate with both of a refrigerant introduction flow path which extends from a refrigerant introduction inlet and a refrigerant discharge flow path which extends to a refrigerant discharge outlet are arranged in parallel with one another in a cooling unit (20). Fins (22) are arranged in each cooling flow path (21c). Semiconductor elements (32) and (33) are arranged over the cooling unit (20) so that the semiconductor elements (32) and (33) are thermally connected to the fins (22). By doing so, a semiconductor module (10) is formed. Heat generated by the semiconductor elements (32) and (33) is conducted to the fins (22) arranged in each cooling flow path (21c) and is removed by a refrigerant which flows along each cooling flow path (21c).
摘要翻译：提供一种半导体模块，其包括获得精细冷却效果的冷却单元。与从制冷剂导入口延伸的制冷剂导入流路和延伸到制冷剂排出口的制冷剂排出流路连通的多个冷却流路（21c）在冷却单元中彼此平行地配置（20）。翅片（22）布置在每个冷却流路（21c）中。半导体元件（32）和（33）布置在冷却单元（20）上方，使得半导体元件（32）和（33）热连接到翅片（22）。通过这样做，形成半导体模块（10）。由半导体元件（32）和（33）产生的热量被传导到布置在每个冷却流路（21c）中的翅片（22），并且通过沿着每个冷却流路（21c）流动的制冷剂去除。

5. 发明申请

WO2011013380A1 MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS 审中-公开
标题翻译：半导体器件和半导体器件的制造方法
公开(公告)号：WO2011013380A1
公开(公告)日：2011-02-03
申请号：PCT/JP2010/004826
申请日：2010-07-29
申请人： FUJI ELECTRIC SYSTEMS CO., LTD. , NIIMURA, Yasushi , WATANABE, Sota , TAKAHASHI, Hidenori , FUJIMOTO, Takumi , NISHIMURA, Takeyoshi , WAKABAYASHI, Takamasa
发明人： NIIMURA, Yasushi , WATANABE, Sota , TAKAHASHI, Hidenori , FUJIMOTO, Takumi , NISHIMURA, Takeyoshi , WAKABAYASHI, Takamasa
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L29/7811 , H01L21/266 , H01L29/0615 , H01L29/0619 , H01L29/063 , H01L29/0638 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/404 , H01L29/41741 , H01L29/41766 , H01L29/42368 , H01L29/66712 , H01L29/66727 , H01L29/7395 , H01L29/7802
摘要： A screen oxide film is formed on an n - drift layer (2) that is disposed on an anterior side of an n-type low-resistance layer (1), and a nitride film is formed on the screen oxide film. The nitride film is photo-etched using a first mask and thereby, a nitride shielding film (61) is formed. N-type impurity ions at a concentration higher than that of the n - drift layer are implanted through the nitride shielding film (61) from an anterior side of a semiconductor substrate and are thermally diffused and thereby, an n counter layer (7) is formed. The screen oxide film is removed. A gate oxide film (3a) is formed. A gate electrode (9) is formed on the gate oxide film (3a). P-type impurity ions are implanted from the anterior side of the semiconductor substrate using the gate electrode (9) and the nitride shielding film (61) as a mask and thereby, p - well regions (10) are formed. N-type impurity ions are implanted from the anterior side of the semiconductor substrate using the gate electrode (9) and the nitride shielding film (61) as a mask and thereby, n source regions (11) are formed.
摘要翻译：在设置在n型低电阻层（1）的前侧的n漂移层（2）上形成荧光体氧化膜，在该荧光体氧化膜上形成氮化膜。使用第一掩模对氮化物膜进行光蚀刻，从而形成氮化物屏蔽膜（61）。浓度高于n-漂移层的N型杂质离子从半导体衬底的前侧通过氮化物屏蔽膜（61）注入并被散热，从而n对准层（7）为形成。去除屏幕氧化膜。形成栅氧化膜（3a）。栅电极（9）形成在栅氧化膜（3a）上。使用栅电极（9）和氮化物屏蔽膜（61）作为掩模，从半导体衬底的前侧注入P型杂质离子，从而形成p-阱区（10）。使用栅电极（9）和氮化物屏蔽膜（61）作为掩模，从半导体衬底的前侧注入N型杂质离子，从而形成n个源区（11）。

6. 发明申请

WO2011007560A1 SUPER-JUNCTION SEMICONDUCTOR DEVICE 审中-公开
标题翻译：超级半导体器件
公开(公告)号：WO2011007560A1
公开(公告)日：2011-01-20
申请号：PCT/JP2010/004549
申请日：2010-07-13
申请人： FUJI ELECTRIC SYSTEMS CO., LTD. , TAKEI, Manabu
发明人： TAKEI, Manabu
IPC分类号： H01L29/78 , H01L29/06
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/7802
摘要： Provision of a super-junction semiconductor device capable of reducing rises in transient on-resistance at the time of repeated switching operation. A super-junction structure is provided that has a striped parallel surface pattern, where a super-junction stripe and a MOS cell 6 stripe are parallel, and a p column Y2 over which no MOS cell 6 stripe is arranged and a p column Y1 over which the MOS cell 6 stripe is arranged are connected at an end.
摘要翻译：提供能够在重复切换操作时减少瞬时导通电阻的上升的超结半导体器件。提供了具有条形平行表面图案的超结结构，其中超结条带和MOS单元6条纹是平行的，以及没有安置MOS单元6条纹的ap列Y2和在其上排列的p1列Y1 MOS单元6条纹布置在一端。

7. 发明申请

WO2010150471A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO2010150471A1
公开(公告)日：2010-12-29
申请号：PCT/JP2010/003834
申请日：2010-06-09
申请人： FUJI ELECTRIC SYSTEMS CO., LTD. , SOYANO, Shin
发明人： SOYANO, Shin
IPC分类号： H01L25/07 , H01L25/18
CPC分类号： H01L25/16 , H01L23/057 , H01L23/552 , H01L24/48 , H01L25/072 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2924/00014 , H01L2924/1305 , H01L2924/13055 , H01L2924/19107 , H01L2924/3025 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device in which the assembly of a shield plate, a metal ring, and a control circuit board is improved is provided. A metal step support 20 implanted in a sheath case includes a base portion 20a, a connection portion 20b, and a step portion 20c. A shield plate 21 is mounted over the step portion 20c. A metal ring 22 is mounted over the shield plate 21 so that it is placed around the connection portion 20b. A control circuit board 23 is mounted over the metal ring 22. The control circuit board 23 is fixed to the connection portion 20b of the step support 20 by the use of a screw 24. The metal ring 22 is positioned by the connection portion 20b, so the assembly can be performed easily. An end of the metal ring 22 over which the control circuit board 23 is mounted protrudes from an end of the connection portion 20b and the control circuit board 23 is fixed onto metal. Therefore, looseness of the screw 24 caused by, for example, vibration can be minimized.
摘要翻译：提供了一种改进了屏蔽板，金属环和控制电路板的组装的半导体器件。植入护套壳体中的金属台阶支撑件20包括基座部分20a，连接部分20b和台阶部分20c。屏蔽板21安装在台阶部20c的上方。金属环22安装在屏蔽板21上，使其围绕连接部分20b放置。控制电路板23安装在金属环22上。控制电路板23通过使用螺钉24固定到台阶支撑件20的连接部分20.金属环22由连接部分20b定位，因此组装可以轻松执行。安装有控制电路板23的金属环22的端部从连接部分20b的一端突出，控制电路板23固定在金属上。因此，可以将例如振动引起的螺杆24的松动减至最小。

8. 发明申请

WO2011040016A1 HIGH VOLTAGE SEMICONDUCTOR DEVICE AND DRIVING CIRCUIT 审中-公开
标题翻译：高电压半导体器件和驱动电路
公开(公告)号：WO2011040016A1
公开(公告)日：2011-04-07
申请号：PCT/JP2010/005867
申请日：2010-09-29
申请人： FUJI ELECTRIC SYSTEMS CO., LTD. , YAMAJI, Masaharu
发明人： YAMAJI, Masaharu
IPC分类号： H01L29/78 , H01L21/336 , H01L21/8234 , H01L27/08 , H01L27/088 , H01L29/06 , H01L29/786
CPC分类号： H01L29/7816 , H01L24/05 , H01L29/0646 , H01L29/0696 , H01L29/1095 , H01L29/402 , H01L29/41758 , H01L29/42368 , H01L29/4238 , H01L2224/02166 , H01L2224/04042 , H01L2224/05552 , H01L2224/48091 , H01L2924/12036 , H01L2924/1301 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H03K17/567 , H03K17/6871 , H03K2217/0063 , H03K2217/0081 , H01L2924/00014 , H01L2924/00
摘要： A high voltage semiconductor device includes an n - -type region 101 encompassed by a p - well region 102 and is provided on a p - -type silicon substrate 100; a drain n + -region 103 connected to a drain electrode 120; a p base region 105 formed so as to be separate from and encompass the drain n + -region 103; and a source n + -region 114 formed in the p base region 105. Further, a p - -region 131 is provided that passes through the n - -type region 101 to the silicon substrate 100. The n - -type region 101 is divided, by the p - -region 131, into an n - -type region 101a having the drain n + -region 103 and an n - -type region 101b as a region having a floating electric potential.
摘要翻译：高电压半导体器件包括由p-阱区域102包围的n型区域101，并且设置在p型硅衬底100上; 连接到漏电极120的漏极n +区域103; 形成为与漏区n +区103分离并包围漏极n +区103的p基区105; 以及形成在p基极区域105中的源极n +区域114.此外，提供通过n型区域101到硅衬底100的p区域131.n-型区域101被分割由p区域131形成具有漏极n +区域103的n型区域101a和具有浮置电位的区域的n型区域101b。

9. 发明申请

WO2011013379A1 SEMICONDUCTOR APPARATUS 审中-公开
公开(公告)号：WO2011013379A1
公开(公告)日：2011-02-03
申请号：PCT/JP2010/004825
申请日：2010-07-29
申请人： FUJI ELECTRIC SYSTEMS CO., LTD. , ONISHI, Yasuhiko , SUGI, Akio
发明人： ONISHI, Yasuhiko , SUGI, Akio
IPC分类号： H01L29/06 , H01L29/78
CPC分类号： H01L29/7811 , H01L29/0619 , H01L29/0634 , H01L29/0638 , H01L29/0696 , H01L29/0878 , H01L29/402 , H01L29/404 , H01L29/41741
摘要： A first parallel pn-layer (12) is formed between an active region (1) and an n + -drain region (2). A peripheral region (3) is provided with a second parallel pn-layer (15), which has a repetition pitch narrower than the repetition pitch of the first parallel pn-layer (12). An n - -surface region (18) is formed between the second parallel pn-layer (15) and a first main surface. On the first main surface side of the n - -surface region (18), a plurality of p-guard ring regions (19), (20), and (21) are formed to be separated from each other. A field plate electrode (23) is connected electrically to the outermost p-guard ring region (19) among the p-guard ring regions (19), (20), and (21). A channel stopper electrode (24) is connected electrically to an outermost peripheral p-region (26) of the peripheral region (3).
摘要翻译：第一并联pn层（12）形成在有源区（1）和n + - 区域（2）之间。周边区域（3）设置有第二平行pn层（15），其具有比第一并联pn层（12）的重复间距窄的重复间距。在第二平行pn层（15）和第一主表面之间形成n表面区域（18）。在n面区域（18）的第一主表面侧，形成有多个p保护环区域（19），（20）和（21）彼此分离。场保护环区域（19），（20）和（21）中的场极板电极（23）电连接到最外层保护环区域（19）。通道阻挡电极（24）电连接到周边区域（3）的最外周边p区域（26）。

10. 发明申请

WO2011024377A1 SEMICONDUCTOR MODULE AND HEAT RADIATION MEMBER 审中-公开
标题翻译：半导体模块和热辐射构件
公开(公告)号：WO2011024377A1
公开(公告)日：2011-03-03
申请号：PCT/JP2010/004610
申请日：2010-07-15
申请人： FUJI ELECTRIC SYSTEMS CO., LTD. , SOYANO, Shin , ONO, Masaki , SUZUKI, Kenji , MOROZUMI, Akira
发明人： SOYANO, Shin , ONO, Masaki , SUZUKI, Kenji , MOROZUMI, Akira
IPC分类号： H01L23/373
CPC分类号： H05K7/2039 , H01L23/3672 , H01L23/3736 , H01L25/072 , H01L2224/32225 , H01L2924/1305 , H01L2924/13055 , H01L2924/00
摘要： The characteristics of a heat radiation member used in a semiconductor module are improved. A heat radiation member (10A) including an aluminum type member (20) which contains aluminum and a copper type member (30) which contains copper, which is embedded in the aluminum type member (20), and sides of which are enclosed by the aluminum type member (20) is formed. A semiconductor element is thermally bonded to the heat radiation member (10A) to fabricate a semiconductor module. The heat radiation member (10A) includes the aluminum type member (20) and the copper type member (30). As a result, it is possible to realize light weight while ensuring certain heat radiation. In addition, the copper type member (30) is enclosed by the aluminum type member (20). Accordingly, the strength of the heat radiation member (10A) can be increased.
摘要翻译：提高了在半导体模块中使用的散热构件的特性。一种散热构件（10A），其包括嵌入铝型构件（20）中的包含铝的铝型构件（20）和包含铜的铜型构件（30），其侧面被形成铝型构件（20）。将半导体元件热粘合到散热构件（10A）以制造半导体模块。散热构件（10A）包括铝型构件（20）和铜构件（30）。结果，可以在确保一定的热辐射的同时实现轻量化。此外，铜型部件（30）由铝型部件（20）包围。因此，可以提高散热构件（10A）的强度。

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