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1. 发明授权

US06861210B2 Resist remover composition 有权
标题翻译：抵抗去除剂组成
公开(公告)号：US06861210B2
公开(公告)日：2005-03-01
申请号：US10478388
申请日：2001-05-21
申请人： Ji-Hum Baik , Chang-Il Oh , Chong-Soon Yoo
发明人： Ji-Hum Baik , Chang-Il Oh , Chong-Soon Yoo
IPC分类号： G03F7/42 , G03F7/32
CPC分类号： G03F7/425
摘要： The present invention relates to a resist remover composition for removing resists during manufacturing processes of semiconductor devices such as integrated circuits, large scale integrated circuits and very large scale integrated circuits. The composition comprises a) 10 to 40 wt. % of water-soluble organic amine compound, b) 10 to 60 wt. % of water-soluble polar organic solvent, c) 10 to 30 wt. % of water, and d) 0.1 to 10 wt. % of organic phenol compound containing two or more hydroxyl groups, and it is characterized in that the water-soluble polar organic solvent is 2-hydroxyisobutyric acid methylester (HBM).
摘要翻译：本发明涉及用于在集成电路，大规模集成电路和大规模集成电路等半导体器件的制造工艺中去除抗蚀剂的抗蚀剂去除剂组合物。该组合物包含a）10至40wt。％的水溶性有机胺化合物，b）10〜60重量％％的水溶性极性有机溶剂，c）10〜30wt。％的水，和d）0.1〜10wt。％的含有两个或多个羟基的有机酚化合物，其特征在于水溶性极性有机溶剂是2-羟基异丁酸甲酯（HBM）。

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