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1. 发明申请

WO2013054941A3 MATING-TYPE CONNECTION TERMINAL, AND MANUFACTURING METHOD THEREFOR 审中-公开
标题翻译：主要类型的连接终端及其制造方法
公开(公告)号：WO2013054941A3
公开(公告)日：2013-06-13
申请号：PCT/JP2012076747
申请日：2012-10-10
申请人： DOWA METALTECH CO LTD , YAZAKI CORP
发明人： ONODERA AKIFUMI , NAKAMURA MASATOSHI , SUGAWARA AKIRA , NARIEDA HIROTO
IPC分类号： H01R13/04 , H01R13/03 , H01R13/11 , H01R43/16
CPC分类号： H01R13/02 , H01R13/03 , H01R13/187 , H01R43/16 , Y10T29/49224
摘要： A mating-type connection terminal comprising a male terminal and female terminal configured by forming an Sn plating layer upon a conductive substrate, wherein a plurality of grooves or recesses that are separated from each other in the lengthwise direction are formed in the surface of one terminal among the male terminal and the female terminal in the section where the one terminal contacts the other terminal, and the grooves or recesses fulfill the relationships d
摘要翻译：一种配合型连接端子，包括通过在导电基板上形成Sn镀层而构成的阳端子和阴端子，其中在一个端子的表面上形成有沿长度方向彼此分离的多个槽或凹部在一个端子与另一个端子接触的部分中的阳端子和阴端子中，凹槽或凹槽满足关系d <= b，d <= a <= L和a + c <= L。其中，a表示凹槽或凹槽的宽度（以母体表示），b表示凹槽或凹槽（母体）的深度，c表示相邻凹槽或凹槽之间在长度方向（以母体）的距离，L表示当阳端子和母端子配合并固定（母体）时，阳端子和阴端子之间的滑动距离，d表示由该滑动产生的磨损产生的颗粒的氧化物的最大粒径。

2. 发明申请

WO2012050242A1 FEMALE TERMINAL AND METHOD FOR FABRICATING FEMALE TERMINAL 审中-公开
标题翻译：用于制造女性终端的女性终端和方法
公开(公告)号：WO2012050242A1
公开(公告)日：2012-04-19
申请号：PCT/JP2011/074244
申请日：2011-10-14
申请人： YAZAKI CORPORATION , DOWA METALTECH CO., LTD. , KUBODERA, Atsushi , SUDA, Hisashi
发明人： KUBODERA, Atsushi , SUDA, Hisashi
IPC分类号： H01R43/16
CPC分类号： H01R43/16 , C22C9/00 , C22C9/06 , H01R13/03 , H01R13/11 , Y10T29/49204
摘要： A female terminal 1 has a box portion 11 which is formed into a quadrangular prism-like shape so as for a tab of a male terminal to fit therein by bending a copper alloy plate which is obtained by being continuously and repeatedly bent before an age heat treatment is applied thereto, which has a proof stress of 700 MPa or larger and a width of 10 mm or larger and in which no crack is produced therein when bent 180 degrees about a bending axis which is at right angles to a rolling direction of the copper alloy plate. In this case, the box portion 11 includes notches which are formed in inner sides of bent portions produced by bending the copper alloy plate, and a depth of the notch is set to be in the range from 1/4 to 1/2 of a thickness of the copper alloy plate.
摘要翻译：阴端子1具有盒形部分11，其形成为四边形棱柱形状，以便通过弯曲铜合金板而将阳端子的突片装配在其中，该铜合金板是在老化之前连续且反复弯曲而获得的对其进行了处理，其具有700MPa以上的弹性应力和10mm以上的宽度，并且当弯曲轴弯曲180°时，在与其的滚动方向成直角的弯曲轴弯曲180度时不产生裂纹铜合金板。在这种情况下，盒部11包括形成在通过弯曲铜合金板而产生的弯曲部分的内侧中的凹口，并且凹口的深度被设定在范围从1/4的1/2 铜合金板的厚度。

3. 发明公开

KR20180042418A Sn 도금재 및 그 제조 방법 审中-公开
公开(公告)号：KR20180042418A
公开(公告)日：2018-04-25
申请号：KR20187008791
申请日：2016-08-23
申请人： DOWA METALTECH CO LTD , YAZAKI CORP
发明人： SONODA YUTA , NARIEDA HIROTO , ENDO HIDEKI , SUGAWARA AKIRA , KOTANI HIROTAKA , TOYOIZUMI JYUN , KONDO TAKAYA , KISHIBATA YUYA
IPC分类号： C25D5/50 , C25D5/12 , C25D7/00 , H01R13/03 , H01R43/16
CPC分类号： C25D5/12 , C25D5/50 , C25D7/00 , H01R13/03 , H01R43/16
摘要： 구리또는구리합금으로이루어지는기재(10)의표면에형성된 Ni로이루어지는하지층(12)의표면에 Sn을포함하는최표층(14)이형성된 Sn 도금재에있어서, 최표층(14)이다수의 Cu-Sn 합금의결정립으로이루어지는 Cu-Sn 합금층(14a)과, 이 Cu-Sn 합금층(14a)의최표면에있어서인접하는 Cu-Sn 합금의결정립간의오목부에형성된 Sn으로이루어지는평균두께 0.01 내지 0.20㎛의 Sn층(14b)과, Cu-Sn 합금층(14a) 내의하지층(12)측에서로이격하도록배치된 Cu-Ni-Sn 합금으로이루어지는복수의 Cu-Ni-Sn 합금층(14c)으로구성되어있다.

4. 发明专利

DE102021119042A1 ALUMINIUM/KERAMIK-VERBINDUNGSSUBSTRAT UND VERFAHREN ZUR HERSTELLUNG DESSELBEN 未知
公开(公告)号：DE102021119042A1
公开(公告)日：2022-02-03
申请号：DE102021119042
申请日：2021-07-22
申请人： DOWA METALTECH CO LTD , MITSUBISHI ELECTRIC CORP
发明人： KOBAYASHI KOJI , TSUBOTA TAKUMA , OSANAI HIDEYO , OYA DAISUKE
IPC分类号： H01L23/15 , C04B37/02
摘要： Es wird ein Aluminium/Keramik-Verbindungssubstrat bereitgestellt, das ein Keramiksubstrat, eine Aluminiumplatte aus einer Aluminiumlegierung, die direkt mit einer Seite des Keramiksubstrats verbunden ist, eine Aluminiumgrundplatte aus der Aluminiumlegierung, die direkt mit der anderen Seite des Keramiksubstrats verbunden ist, und ein plattenförmiges Verstärkungsteil aufweist, das eine höhere Festigkeit besitzt als diejenige der Aluminiumgrundplatte und das in der Aluminiumgrundplatte angeordnet ist, um direkt mit der Aluminiumgrundplatte verbunden zu sein, wobei die Aluminiumlegierung 0,01 bis 0,2 Gewichts-% Magnesium und 0,01 bis 0,1 Gewichts-% Silizium enthält, und der Rest Aluminium und unvermeidbare Verunreinigungen sind.

5. 发明专利

HUE053607T2 Hõsugárzó lemez és eljárás elõállítására 未知
公开(公告)号：HUE053607T2
公开(公告)日：2021-07-28
申请号：HUE13185984
申请日：2013-09-25
申请人： DOWA METALTECH CO LTD
发明人： IDEGUCHI SATORU , OSANAI HIDEYO , KOTANI HIROTAKA
IPC分类号： H01L21/48

6. 发明专利

MY180280A HEAT RADIATING PLATE AND METHOD FOR PRODUCING SAME 未知
公开(公告)号：MY180280A
公开(公告)日：2020-11-26
申请号：MYPI2016001773
申请日：2016-09-30
申请人： DOWA METALTECH CO LTD
发明人： TOMOTSUGU AOYAMA , AKIRA SUGAWARA
摘要： In a method for producing a heat radiating plate (20), the method containing the steps of: finish cold-rolling an annealed material to obtain a strip; causing the strip to wind in the shape of a coil to prepare a coil stock; unwinding the coil stock by means of an uncoiler (10) to obtain a strip (12); causing the strip (12) to pass through a gap between the rolls of a leveler (14) to correct the shape thereof; progressively feeding the corrected strip (12) to a progressive die (18) via a feeder (16) to progressively press-working the strip (12) to produce a heat radiating plate (20), the finish cold-rolling is carried out so that a ratio of the Vickers hardness HV after the finish cold-rolling to the Vickers hardness HV before the finish cold-rolling is not less than 1. 2, and the corrected strip (12) is allowed to bend due to ~ts own weight between the leveler (14) and the feeder (16) so that the minimum value of deflection (11-LO) is 0. 5 to 2. 0 m assuming that LO is a distance between a roll at the last sending side of the leveler (14) and a roll at the first entrance side of the feeder (16) and that L1 is the length of the strip (12) between the roll at the last sending side of the leveler (14) and the roll at the first entrance side of the feeder (16). (Fig. 1)

7. 发明专利

DE602008001515D1 Cu-Ni-Si-basiertes Kupferlegierungsfolienmaterial und Herstellungsverfahren dafür 未知
公开(公告)号：DE602008001515D1
公开(公告)日：2010-07-29
申请号：DE602008001515
申请日：2008-02-13
申请人： DOWA METALTECH CO LTD
发明人： GAO WEILIN , SUDA HISASHI , NARIEDA HIROTO , SUGAWARA AKIRA
IPC分类号： C22C9/06 , C22F1/08

8. 发明专利

AT456681T 未知
公开(公告)号：AT456681T
公开(公告)日：2010-02-15
申请号：AT04009838
申请日：2004-04-26
申请人： ISHIDA KIYOHITO , YAMAHA METANIX CORP , DOWA METALTECH CO LTD
发明人： ISHIDA KIYOHITO , KAINUMA RYOSUKE , KIMURA TAKASHI , MIURA MICHIO , MIZUSHIMA TAKASHI , TSUGANE YOZO
IPC分类号： C22C9/00 , C22C9/01 , C22C9/05 , C22C9/06 , C22C9/10
摘要： A copper alloy having superior thermal conductivity comparable to that of conventional materials, can be produced at low cost. An oxygen free copper, a base material of a Cu-B alloy were melted in vacuo by a casting method, B and at least one element selected from Mg, Ni, Co, Al, Si, Fe, Zr, and Mn are added into the molten metal wherein the content of each element or the alloy of Ni-B, Fe-B, Cu-Mg, and so forth becoming the predetermined content. This alloy is cast into an ingot of 12 mm square, heated at 600 to 900 DEG C for 1 hour, and the cast was rolled to be 3 mm by hot rolling. After these steps, heat treatment at 600 to 900 DEG C was provided and processed into predetermined shape.

9. 发明专利

DE60320083D1 未知
公开(公告)号：DE60320083D1
公开(公告)日：2008-05-15
申请号：DE60320083
申请日：2003-09-26
申请人： DOWA METALTECH CO LTD
发明人： INOHANA YASUO , SUGAWARA AKIRA , SATO TOSHIHIRO
IPC分类号： C22C1/02 , C22C9/04 , C22C9/02 , C22F1/08

10. 发明专利

DE102007015292A1 未知
公开(公告)号：DE102007015292A1
公开(公告)日：2007-10-25
申请号：DE102007015292
申请日：2007-03-29
申请人： DOWA METALTECH CO LTD
发明人： SUGAWARA AKIRA , TAKAHASHI TAKAYUKI
IPC分类号： H01L23/15
摘要： After a molten metal of aluminum or an aluminum alloy having a temperature, which is higher than the liquidus line temperature of aluminum or the aluminum alloy by 5 to 200° C., is injected into a mold, when the mold is cooled to solidify the molten metal, the molten metal injected into the mold is pressurized at a pressure of 1.0 to 100 kPa from a high-temperature side to a low-temperature side, and the mean cooling rate is set to be 5 to 100° C./minute while the mold is cooled from the liquidus line temperature to 450° C., the temperature gradient formed in the mold being set to be in the range of from 1° C./cm to 50° C./cm.

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