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1. 发明申请

WO2023285234A1 POWER MODULE 审中-公开
公开(公告)号：WO2023285234A1
公开(公告)日：2023-01-19
申请号：PCT/EP2022/068732
申请日：2022-07-06
申请人： DANFOSS SILICON POWER GMBH
发明人： SCHUETZ, Tobias , ASAM, Johann , RÖSNER, Robert
IPC分类号： H01L25/07 , H02M7/00 , H01L23/00
摘要： A power module is described comprising: a plurality of DC terminals at a first end of the power module for receiving a DC input, wherein the plurality of DC terminals comprise one or more positive DC terminals and one or more negative DC terminals; an AC terminal for providing an AC output; a plurality of first switching elements, electrically connected in parallel, wherein the first switching elements are provided in one or more lines running from the first end of the power module to a second end of the power module, opposite the first end, wherein the first switching elements selectively connect the one or more positive DC terminals to the AC terminal; a plurality of second switching elements, electrically connected in parallel, wherein the second switching elements are provided in one or more lines running from the first end to the second end of the power module, wherein the second switching elements selectively connect the one or more negative DC terminals to the AC terminal; and a first current diverting structure connecting one of the DC terminals at the first end and a first DC terminal point at or near the second end, such that current received at the respective DC terminal is directed to respective switching elements at or near the second end of the power module.

2. 发明申请

WO2022058311A1 ELECTRONIC MODULE AND METHOD FOR CONNECTING SEVERAL CONDUCTORS TO A SUBSTRATE 审中-公开
公开(公告)号：WO2022058311A1
公开(公告)日：2022-03-24
申请号：PCT/EP2021/075243
申请日：2021-09-14
申请人： DANFOSS SILICON POWER GMBH
发明人： WOEHL, Robert , MÖSS, Frederic
IPC分类号： H01L23/498 , H05K3/328 , H01L21/485
摘要： A method for connecting two or more conductors with connection pads to a substrate, comprising the steps of: placing a first connection pad of a first conductor and a second connection pad of a second conductor such that the first connection pad is arranged between the second connection pad and the substrate and subsequently carrying out a welding process, in which the second connection pad and the first connection pad are welded to each other and to the substrate.

3. 发明申请

WO2021239984A1 METHOD OF ASSEMBLING A SEMICONDUCTOR COMPONENT 审中-公开
公开(公告)号：WO2021239984A1
公开(公告)日：2021-12-02
申请号：PCT/EP2021/064423
申请日：2021-05-28
申请人： DANFOSS SILICON POWER GMBH
发明人： BICAKCI, Aylin , BECKER, Martin , MÜLLER, Zeno
IPC分类号： H01L21/56 , H01L21/48 , H01L23/495 , H01L25/07
摘要： A method of assembling a semiconductor component is described, wherein the semiconductor component comprises a substrate and one or more components mounted on the substrate, the method comprising: placing an electrical connection structure on the substrate of the semiconductor component and/or on one or more of the one or more components of the semiconductor component; using a molding press to apply pressure to the electrical connection structure, the substrate and the one or more components of the semiconductor component; and introducing a molding compound into the molding press, thereby encapsulating the semiconductor component.

4. 发明申请

WO2021130110A1 POWER MODULE WITH IMPROVED ELECTRICAL AND THERMAL CHARACTERISTICS 审中-公开
公开(公告)号：WO2021130110A1
公开(公告)日：2021-07-01
申请号：PCT/EP2020/086965
申请日：2020-12-18
申请人： DANFOSS SILICON POWER GMBH
发明人： BERGMANN, Jörg , STRÖBEL-MAIER, Henning
IPC分类号： H01L23/66 , H01L23/498 , H01L23/538 , H01L23/00 , H01L25/07 , H02M7/00 , H01L23/3735 , H01L23/49811 , H01L23/49844 , H01L23/5386 , H01L24/48 , H01L24/49 , H01L25/072 , H02M7/003
摘要： A power module (1) comprising a group of at least three rectangular electrical power components (11, 12, 13, 14, 23, 24, 25, 26) arranged on a substrate (2), wherein in that at least one side (31) of at least one of the rectangular electrical power components (11, 14) is not orthogonal or parallel to a line (3) that passes through the geometric centres of the remaining rectangular electrical power components (12, 13) of the group.

5. 发明申请

WO2020078647A1 FLOW DISTRIBUTOR FOR COOLING AN ELECTRICAL COMPONENT, A SEMICONDUCTOR MODULE COMPRISING SUCH A FLOW DISTRIBUTOR, AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：WO2020078647A1
公开(公告)日：2020-04-23
申请号：PCT/EP2019/074892
申请日：2019-09-17
申请人： DANFOSS SILICON POWER GMBH
发明人： WECKER, Georg
IPC分类号： H01L23/473 , B33Y80/00 , F28F3/12
摘要： A flow distributor (1) is provided for distributing a heat transporting fluid flow (2) of an electrical component across a surface to be cooled and/or heated by the fluid. The distributor comprises at least one flow channel configured to direct the fluid flow across the surface, the flow channels being delimited on either side by walls (4) so as to form a path (6) for the fluid flow (2) within the flow channels (3), and comprising wall sections (5) extending into the at least one flow channel (3); and at least one of the wall sections (5) comprises at least one bypass passage (7) to connect two adjacent spaces (8) separated by the wall section (5) where the at least one bypass passage (7) extends from one side of the wall section to the other one with an inclined orientation (10) so as to create a short circuit flow (9) for apart of the fluid flow (2).Furthermore, a method of manufacturing such a flow distributor is provided, having an insert with the wall structure of the inventive flow distributor which is manufactured by injection molding or by 3D-printing.

6. 发明申请

WO2019185391A1 METHOD OF ASSEMBLING A SEMICONDUCTOR POWER MODULE COMPONENT, SEMICONDUCTOR POWER MODULE WITH SUCH A MODULE COMPONENT HAVING COMPONENT PARTS SOLDERED TOGETHER AND COMPONENT PARTS SINTERED TOGETHER, AS WELL AS MANUFACTURING SYSTEM THEREFOR 审中-公开
公开(公告)号：WO2019185391A1
公开(公告)日：2019-10-03
申请号：PCT/EP2019/056730
申请日：2019-03-18
申请人： DANFOSS SILICON POWER GMBH
发明人： OSTERWALD, Frank , ULRICH, Holger
IPC分类号： H01L23/373 , H01L23/367 , H01L21/603 , H01L21/48 , H01L21/67 , H01L23/31 , H01L23/049 , H01L23/053 , H01L23/24 , H01L23/46
摘要： A method of assembling a semiconductor power module component (30) and a manufacturing system comprising such a semiconductor power module component and a pressing apparatus (20) for manufacturing a semiconductor power module component are described. The semiconductor power module component (30) comprises at least a first element (1) (e.g. a semiconductor chip), a second element (2) (e.g. a substrate, such a DCB substrate) and a third element (3) (e.g. a base plate) arranged in a stack (10). The first element (1) and the second element (2) are joined by sintering in a sintering area (4) and the second element (2) and the third element (3) are joined by soldering in a soldering area (6). The sintering and the soldering are simultaneously executed, wherein the soldering area (6) is heated to a temperature of soldering and the sintering area (4) is heated to a temperature of sintering, the temperature of soldering and the temperature of sintering being harmonized to each other. Pressure is being applied to the stack (10), comprising the at least one soldering area (6) and the at least one sintering area (4) with stabilizing means (7) such as bumps on a surface of the second element (2) or third element (3), solid spacer means incorporated in a solder perform (8) or a wire mesh incorporated in a solder preform (8) being arranged in the soldering area (6). Additional component parts (14, 15) may be sintered onto the first element and/or the second element simultaneously with the sintering and the soldering of the stack (10). The pressure may be applied by a soft cushion-like element (23) surrounding component parts (1, 2, 3, 14, 15) of the module (30).

7. 发明申请

WO2018130432A1 POWER MODULE WITH IMPROVED CURRENT DISTRIBUTION 审中-公开
公开(公告)号：WO2018130432A1
公开(公告)日：2018-07-19
申请号：PCT/EP2018/050058
申请日：2018-01-02
申请人： DANFOSS SILICON POWER GMBH
发明人： MÜHLFELD, Ole , MANNMEUSEL, Guido , BERGMANN, Jörg
IPC分类号： H02M7/00 , H01L25/07 , H03K17/12
CPC分类号： H02M7/003 , H01L25/072 , H01L25/18 , H01L2224/49111 , H01L2924/19107 , H03K17/122
摘要： The present disclosure provides a power module comprising at least one substrate on which at least two semiconductor switches are mounted, wherein the at least two semiconductor switches are configured to operate in parallel, and wherein at least one of a control circuit and a load circuit for the semiconductor switches is designed to minimize a difference between electrical parameters of the at least one circuit for respective semiconductor switches.

8. 发明申请

WO2018041949A1 AXIAL BEARING ARRANGEMENT FOR A DRIVE SHAFT OF A CENTRIFUGAL COMPRESSOR 审中-公开
标题翻译：离心压缩机驱动轴的轴向轴承安装
公开(公告)号：WO2018041949A1
公开(公告)日：2018-03-08
申请号：PCT/EP2017/071874
申请日：2017-08-31
申请人： DANFOSS SILICON POWER GMBH
发明人： BONNEFOI, Patrice , ROSSON, Yves
IPC分类号： F16C32/06 , F04D17/10 , F04D29/057
CPC分类号： F04D29/0513 , F04D17/10 , F04D29/057 , F04D29/059 , F16C32/0614 , F16C32/0674 , F16C32/0685 , F16C32/0692 , F16C2360/44
摘要： Axial bearing arrangement for a drive shaft of a centrifugal compressor The axial bearing arrangement comprises a first axial bearing plate (12) and a second axial bearing plate (13) each having an annular ring shape, the first axial bearing plate (12) having a first surface (12.1) axially facing the second axial bearing plate (13) and a second surface (12.2) opposite to the respective first surface (12.1), the second axial bearing plate (13) having a first surface (13.1) axially facing the first axial bearing plate (12) and a second surface (13.2) opposite to the respective first surface (13.1); a spacer ring (14) clamped between the first surfaces (12.1, 13.1) of the first and second axial bearing plates (12, 13), the spacer ring (14) defining an axial distance between the first and second axial bearing plates (12, 13); and a bearing sleeve (15) abutting the second surface (13.2) of the second axial bearing plate (13) and being secured to a compressor block (16). The axial bearing arrangement includes an elastic element (22) axially biasing the first and second axial bearing plates (12, 13) and the spacer ring (14) with a predetermined force against an abutment surface (17) of the bearing sleeve (15).
摘要翻译：用于离心式压缩机的驱动轴的轴向轴承装置轴向轴承装置包括各自具有圆环形状的第一轴向轴承板（12）和第二轴向轴承板（13），第一轴向轴承板（12）具有轴向面向所述第二轴向轴承板（13）的第一表面（12.1）和与所述相应的第一表面（12.1）相对的第二表面（12.2），所述第二轴向轴承板（13）具有沿轴向面向第一轴向支承板（12）的第一表面（13.1）和与相应第一表面（13.1）相对的第二表面（13.2）。在第一和第二轴向支承板（12,13）的第一表面（12.1,13.1）之间夹紧的隔离环（14），间隔环（14）限定第一和第二轴向支承板（12,13）之间的轴向距离，13）; 以及邻接第二轴向支承板（13）的第二表面（13.2）并固定到压缩机组（16）的轴承套筒（15）。所述轴向轴承装置包括弹性元件（22），所述弹性元件（22）以预定的力轴向偏置所述第一和第二轴向轴承板（12,13）和所述间隔环（14）抵靠所述轴承套筒（15）的邻接表面（17）

9. 发明申请

WO2017029082A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND THE CORRESPONDING DEVICE 审中-公开
标题翻译：制造半导体器件和相应器件的方法
公开(公告)号：WO2017029082A1
公开(公告)日：2017-02-23
申请号：PCT/EP2016/067792
申请日：2016-07-26
申请人： DANFOSS SILICON POWER GMBH
发明人： OSTERWALD, Frank , BECKER, Martin , ULRICH, Holger , EISELE, Ronald , RUDZKI, Jacek
IPC分类号： H01L23/492
CPC分类号： H01L24/92 , H01L24/94 , H01L24/97 , H01L2224/291 , H01L2224/32225 , H01L2224/48491 , H01L2224/83447 , H01L2224/8384 , H01L2224/9221 , H01L2224/9222 , H01L2224/94 , H01L2224/97 , H01L2924/00014
摘要： A method for manufacturing semiconductor chips (2, 3) having arranged thereon metallic shaped bodies (6), having the following steps: arranging a plurality of metallic shaped bodies (6) on a processed semiconductor wafer while forming a layer arranged between the semiconductor wafer and the metallic shaped bodies (6), exhibiting a first connection material (4) and a second connection material (5), and processing the first connection material (4) for connecting the metallic shaped bodies (6) to the semiconductor wafer without processing the second connecting material (5), wherein the semiconductor chips (2, 3) are separated either prior to arranging the metallic shaped bodies (6) on the semiconductor wafer or after processing the first connection material (4).
摘要翻译：一种在其上配置有金属成形体（6）的半导体芯片（2,3）的制造方法，具有以下步骤：将多个金属体（6）配置在经处理的半导体晶片上，同时形成配置在半导体晶片和呈现第一连接材料（4）和第二连接材料（5）的金属成形体（6），并且处理用于将金属成形体（6）连接到半导体晶片的第一连接材料（4），而不加工第二连接材料（5），其中半导体芯片（2,3）在将金属成形体（6）布置在半导体晶片上之后或在处理第一连接材料（4）之后被分离。

10. 发明申请

WO2016071079A1 POWER SEMICONDUCTOR CONTACT STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF 审中-公开
标题翻译：功率半导体接触结构及其生产方法
公开(公告)号：WO2016071079A1
公开(公告)日：2016-05-12
申请号：PCT/EP2015/073562
申请日：2015-10-12
申请人： DANFOSS SILICON POWER GMBH
发明人： BECKER, Martin , EISELE, Ronald , OSTERWALD, Frank , RUDZKI, Jacek
IPC分类号： H01L23/49 , H01L23/485 , H01L21/60
CPC分类号： H01L24/45 , H01L24/03 , H01L24/05 , H01L24/48 , H01L24/85 , H01L2224/03334 , H01L2224/03505 , H01L2224/04042 , H01L2224/05017 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/0518 , H01L2224/05184 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45147 , H01L2224/4554 , H01L2224/48491 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/4888 , H01L2224/48884 , H01L2224/85238 , H01L2224/85365 , H01L2924/181 , H01L2924/00015 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： A power semiconductor contact structure for power semiconductor modules, which has at least one substrate (1) and a metal moulded body (2) as an electrode, which are sintered one on top of the other by means of a substantially uninterrupted sintering layer (3a) with regions of varying thickness. The metal moulded body (2) takes the form here of a flexible contacting film (5) of such a thickness that this contacting film is sintered with its side (4) facing the sintering layer (3a) onto the regions of varying thickness of the sintering layer substantially over the full surface area. A description is also given of a method for forming a power semiconductor contact structure in a power semiconductor module that has a substrate and a metal moulded body. The forming of the power semiconductor contact structure is performed firstly by applying a layer of sintering material of locally varying thickness to either the metal moulded body (2) or the substrate, followed by sintering together the contacting film (5) with the substrate (1) by using the properties of the layer of sintering material that are conductive to connection, the contacting film (5) being made to develop its distinct form to correspond to the varying thickness of the layer of sintering material (3a).
摘要翻译：一种用于功率半导体模块的功率半导体接触结构，其具有至少一个基板（1）和作为电极的金属模制体（2），其通过基本上不间断的烧结层（3a）而彼此烧结）与不同厚度的区域。金属成型体（2）在这里形成柔性接触膜（5），其厚度使得该接触膜与其面向烧结层（3a）的侧面（4）烧结到不同厚度的区域上烧结层基本上在整个表面积上。还描述了在具有基板和金属成型体的功率半导体模块中形成功率半导体接触结构的方法。首先通过向金属成型体（2）或基板施加局部变化的厚度的烧结材料层，然后将接触膜（5）与基板（1）烧结在一起来进行功率半导体接触结构的形成）通过使用导电连接的烧结材料层的特性，使得接触膜（5）形成其对应于烧结材料层（3a）的变化厚度的不同形式。

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