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1. 发明专利

HK1142870A1 METHOD FOR CONTROLLING RESISTIVITY IN INGOTS MADE OF COMPENSATED FEEDSTOCK SILICON 未知
公开(公告)号：HK1142870A1
公开(公告)日：2010-12-17
申请号：HK10109315
申请日：2010-09-29
申请人： CALISOLAR INC
发明人： KIRSCHT FRITZ , ABROSIMOVA VERA , HEUER MATTHIAS , LINKE DIETER , RAKOTONIANA JEAN PATRICE , OUNADJELA KAMEL
IPC分类号： C01B20060101
摘要： Techniques for controlling resistivity in the formation of a silicon ingot from compensated feedstock silicon material prepares a compensated, upgraded metallurgical silicon feedstock for being melted to form a silicon melt. The compensated, upgraded metallurgical silicon feedstock provides a predominantly p-type semiconductor for which the process assesses the concentrations of boron and phosphorus and adds a predetermined amount of aluminum or/and gallium. The process further melts the silicon feedstock together with a predetermined amount of aluminum or/and gallium to form a molten silicon solution from which to perform directional solidification and, by virtue of adding aluminum or/and gallium, maintains the homogeneity the resistivity of the silicon ingot throughout the silicon ingot. In the case of feedstock silicon leading to low resistivity in respective ingots, typically below 0.4 ©cm, a balanced amount of phosphorus can be optionally added to aluminum or/and gallium. Adding phosphorus becomes mandatory at very low resistivity, typically close to 0.2 ©cm and slightly below.

2. 发明专利

BR112012009877A2 "célula solar resistente à polarização com interface rica em oxigênio" 未知
公开(公告)号：BR112012009877A2
公开(公告)日：2016-08-09
申请号：BR112012009877
申请日：2010-10-27
申请人： CALISOLAR INC
发明人： BLOSSE ALAIN PAUL , PHAN BILL , RAKOTONIAINA JEAN PATRICE , GORMAN JOHN , KAES MARTIN , SIDELKHEIR OMAR , ZHANG RENHUA
IPC分类号： H01L31/0216 , H01L31/18
摘要： "célula solar resistente à polarização com interface rica em oxigênio" trata-se de uma célula solar resistente à polarização que usa uma camada de interface rica em oxigênio. a camada de interface rica em oxigênio pode ser compreendida de sioxny, que pode ter um perfil graduado que varia entre próximo à célula solar rica em oxigênio e distal à célula solar rica em nitrogênio. uma camada de passivação de óxido de silício pode ser interposta entre a célula solar e a camada dielétrica graduada de sioxny. a camada dielétrica graduadade sioxny pode ser substituída por uma camada dielétrica não graduada de sioxny e um revestimento ar de sin.

3. 发明专利

BR112012003658A2 "método de purificação de silíco utilizando processo em cascata." 未知
公开(公告)号：BR112012003658A2
公开(公告)日：2016-08-09
申请号：BR112012003658
申请日：2010-08-20
申请人： CALISOLAR INC
发明人： TURENNE ALAIN , SMITH DAN , NICHOL SCOTT
IPC分类号： C01B33/037 , C30B9/10

4. 发明专利

BR112012009883A2 "célula solar resistente a polarização" 未知
公开(公告)号：BR112012009883A2
公开(公告)日：2018-03-20
申请号：BR112012009883
申请日：2010-10-27
申请人： CALISOLAR INC
发明人： ALAIN PAUL BLOSSE , BILL PHAN , JOHN GORMAN , MARTIN KAES , OMAR SIDELKHEIR , RENHUA ZHANG
IPC分类号： H01L31/0216 , H01L31/18
摘要： "célula solar resistente a polarização" tem-se provisão de uma célula solar resistente a polarização. a célula solar faz emprego de uma pilha dielétrica de dupla camada posicionada junta a superfície frontal da célula. a pilha dielétrica consiste de uma camada passiva posicionada diretamente sobre a superfície frontal da célula e contendo tanto siox quanto sion, e uma camada ar externa contendo sicn.

5. 发明专利

IN2313DEN2012A "METHOD OF PURIFYING SILICON UTILIZING CASCADING PROCESS" 未知
公开(公告)号：IN2313DEN2012A
公开(公告)日：2015-08-21
申请号：IN2313DEN2012
申请日：2012-03-16
申请人： CALISOLAR INC
发明人： TURENNE ALAIN , NICHOL SCOTT , SMITH DAN
IPC分类号： C01B33/037
摘要： The present invention relates to a method of purifying a material using a metallic solvent. The present invention includes a method of purifying silicon utilizing a cascade process. In a cascade process, as the silicon moves through the purification process, it contacts increasingly pure solvent metal that is moving through the process in an opposite direction.

6. 发明专利

ES2377343T3 Procedimiento para controlar la resistividad en lingotes hechos de silicio de carga de alimentación compensado 未知
公开(公告)号：ES2377343T3
公开(公告)日：2012-03-26
申请号：ES08772195
申请日：2008-06-27
申请人： CALISOLAR INC
发明人： KIRSCHT FRITZ , ABROSIMOVA VERA , HEUER MATTHIAS , LINKE DIETER , RAKOTONIAINA JEAN , OUNADJELA KAMEL
IPC分类号： C01B33/26
摘要： Un procedimiento para controlar la resistividad en la formación de un lingote de silicio, que comprende las etapas de:preparar una carga de alimentación de silicio metalúrgico mejorado y compensado para ser fundida con el fin de formar una fundición de silicio, comprendiendo dicha carga de alimentación de silicio metalúrgico mejorado y compensado un semiconductor predominantemente de tipo p;evaluar las concentraciones de boro y fósforo en dicha carga de alimentación de silicio metalúrgico mejorado y compensado; añadir a dicha carga de alimentación de silicio metalúrgico mejorado y compensado, antes de la fundición, una cantidad predeterminada de un elemento o elementos del grupo que consiste en aluminio, galio, mezclas de aluminio y galio, u otros elementos del Grupo III, en la que dichas concentraciones relativas de boro y fósforo determinan dicha cantidad predeterminada; fundir dicha carga de alimentación de silicio metalúrgico mejorada y dicha cantidad predeterminada de dicho elemento para formar una solución de silicio fundida que incluye dicha cantidad predeterminada de dicho elemento;y realizar una solidificación direccional de dicha solución de silicio fundida para formar un lingote de silicio y, en virtud de dicha adición de dicha cantidad predeterminada de dicho elemento, reducir la pérdida de rendimiento a nivel de un lingote, en virtud de la reducción del efecto de los diferentes coeficientes de segregación de boro y fósforo.

7. 发明专利

AT532749T 未知
公开(公告)号：AT532749T
公开(公告)日：2011-11-15
申请号：AT08772195
申请日：2008-06-27
申请人： CALISOLAR INC
发明人： KIRSCHT FRITZ , ABROSIMOVA VERA , HEUER MATTHIAS , LINKE DIETER , RAKOTONIAINA JEAN , OUNADJELA KAMEL
IPC分类号： C01B33/26
摘要： Techniques for controlling resistivity in the formation of a silicon ingot from compensated feedstock silicon material prepares a compensated, upgraded metallurgical silicon feedstock for being melted to form a silicon melt. The compensated, upgraded metallurgical silicon feedstock provides a predominantly p-type semiconductor for which the process assesses the concentrations of boron and phosphorus and adds a predetermined amount of aluminum or/and gallium. The process further melts the silicon feedstock together with a predetermined amount of aluminum or/and gallium to form a molten silicon solution from which to perform directional solidification and, by virtue of adding aluminum or/and gallium, maintains the homogeneity the resistivity of the silicon ingot throughout the silicon ingot. In the case of feedstock silicon leading to low resistivity in respective ingots, typically below 0.4 ©cm, a balanced amount of phosphorus can be optionally added to aluminum or/and gallium. Adding phosphorus becomes mandatory at very low resistivity, typically close to 0.2 ©cm and slightly below.

8. 发明专利

CA2718012A1 A SOLAR CELL AND FABRICATION METHOD USING CRYSTALLINE SILICON BASED ON LOWER GRADE FEEDSTOCK MATERIALS 未知
公开(公告)号：CA2718012A1
公开(公告)日：2009-09-17
申请号：CA2718012
申请日：2009-03-09
申请人： CALISOLAR INC
发明人： OUNADJELA KAMEL , RAKOTONIAINA JEAN PATRICE , KAES MARTIN , ZICKERMANN DIRK , BLOSSE ALAIN , ZERGA ABDELLATIF , HEUER MATTHIAS , KIRSCHT FRITZ
IPC分类号： H01L31/00 , H01L31/042
摘要： Formation of a solar cell device from upgraded metallurgical grade silicon which has received at least one defect engineering process and including a low contact resistance electrical path. An anti- reflective coating is formed on an emitter layer and back contacts are formed on a back surface of the bulk silicon substrate. This photovoltaic device may be fired to form back surface field temperatures sufficiently low to avoid reversal of previous defect engineering processes. The process further forms openings in the anti-reflective coating and a low contact resistance metal layer, such as nickel layer, over the openings in the coating. The process may anneal the low contact resistance metal layer to form n- doped portion and complete an electrically conduct path to the n-doped layer. This low temperature metallization (e.g.,

9. 发明专利

AU2009223574A1 A solar cell and fabrication method using crystalline silicon based on lower grade feedstock materials 未知
公开(公告)号：AU2009223574A1
公开(公告)日：2009-09-17
申请号：AU2009223574
申请日：2009-03-09
申请人： CALISOLAR INC
发明人： KAES MARTIN , OUNADJELA KAMEL , HEUER MATTHIAS , RAKOTONIAINA JEAN PATRICE , BLOSSE ALAIN , ZICKERMANN DIRK , ZERGA ABDELLATIF , KIRSCHT FRITZ
IPC分类号： H01L31/00
摘要： Formation of a solar cell device from upgraded metallurgical grade silicon which has received at least one defect engineering process and including a low contact resistance electrical path. An anti-reflective coating is formed on an emitter layer and back contacts are formed on a back surface of the bulk silicon substrate. This photovoltaic device may be fired to form a back surface field at a temperature sufficiently low to avoid reversal of previous defect engineering processes. The process further forms openings in the anti-reflective coating and a low contact resistance metal layer, such as nickel layer, over the openings in the anti-reflective coating. The process may anneal the low contact resistance metal layer to form n-doped portion and complete an electrically conduct path to the n-doped layer. This low temperature metallization (e.g.,

10. 发明申请

WO2011056201A3 POLARIZATION RESISTANT SOLAR CELL 审中-公开
公开(公告)号：WO2011056201A3
公开(公告)日：2011-05-12
申请号：PCT/US2010/002845
申请日：2010-10-27
申请人： CALISOLAR, INC. , PHAN, Bill , ZHANG, Renhua , GORMAN, John , SIDELKHEIR, Omar , BLOSSE, Alain, Paul , KAES, Martin
发明人： PHAN, Bill , ZHANG, Renhua , GORMAN, John , SIDELKHEIR, Omar , BLOSSE, Alain, Paul , KAES, Martin
IPC分类号： H01L31/0216 , H01L31/18
摘要： A polarization resistant solar cell is provided. The solar cell (200) uses a dual layer dielectric stack disposed on the front surface of the cell. The dielectric stack consists of a passivation layer (209) disposed directly on the front cell surface and comprised of either SiO x or SiON, and an outer AR coating (211) comprised of SiCN.

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