专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP3762233B2 Showerhead apparatus for radical evaporation 有权
公开(公告)号：JP3762233B2
公开(公告)日：2006-04-05
申请号：JP2001036908
申请日：2001-02-14
申请人：エイペックスカンパニーリミテッドAPEX Co.,Ltd.
发明人：相俊朴 , 寅 ▲徹▼ 申 , ▲寛▼ 球羅 , 宰湖金 , 尚浩金
IPC分类号： C23C16/455 , C23C16/44 , C23C16/452 , H01J37/32 , H01L21/00 , H01L21/205 , H01L21/3065
CPC分类号： C23C16/45565 , C23C16/452 , C23C16/45574 , H01J37/32082 , H01L21/67069

2. 发明专利

JP2002294454A CHEMICAL VAPOR DEPOSITION APPARATUS 审中-公开
公开(公告)号：JP2002294454A
公开(公告)日：2002-10-09
申请号：JP2002076975
申请日：2002-03-19
申请人： APEX CO LTD
发明人： KIN SAIKO , PARK SANG JUN
IPC分类号： C23C16/455 , C23C16/44 , C23C16/515 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a chemical vapor deposition apparatus which deposits a thin film with superior step coverage and film quality without bringing damage to a substrate and a circuit element, while keeping a fast evaporation speed at low temperature. SOLUTION: An RF power source connection portion 303 connected to an external RF power source 302 is installed on an upper side of a chamber 300. An RF electrode plate 306 is installed within the chamber to be spaced with a predetermined gap from an upper surface of a showerhead 309. Plasma is generated in a first buffer portion 310, which is defined by a gap between the RF electrode plate and an upper surface of the showerhead, by means of the electric power applied from the RF power source to the RF electrode plate. A second buffer portion 316 is defined by a space between the showerheads 309 and 313 respectively arranged in upper and lower portions. Reactant gases are supplied from the first buffer portion in which the plasma is generated; and source gases are supplied from the second buffer portion.

3. 发明专利

JP2001262352A SHOWER HEAD DEVICE FOR RADICAL VAPOR DEPOSITION 失效
公开(公告)号：JP2001262352A
公开(公告)日：2001-09-26
申请号：JP2001036908
申请日：2001-02-14
申请人： APEX CO LTD
发明人： KIN SAIKO , SHIN INTETSU , PARK SANG JUN , RA KANKYU , KIN SHOKO
IPC分类号： C23C16/455 , C23C16/44 , C23C16/452 , H01J37/32 , H01L21/00 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a shower head device having a simplified structure and capable of depositing a high quality thin film on a wafer at a relatively low temperature. SOLUTION: The shower head device (300) comprises: a first shower head (15) having a first buffer part (15a) and a material gas injection hole (15c) for injecting material gas distributed throughout the first buffer part at prescribed flow velocity; a second shower head (18) having a second buffer part (18a) for uniformly distributing plasma generation gas, a plurality of plasma generation gas injection hole parts (18c) for injecting the plasma generation gas, and a through hole (18d); a guide tube (20) which makes the material gas injection hole communicate with the through hole and guides the material gas and the plasma generation gas so that they do not mix with each other; and an RF generating means (19) including an RF load (19a) for impressing an external RF power source on the first shower head.

4. 发明申请

US20020129769A1 Chemical vapor deposition apparatus 有权
标题翻译：化学气相沉积装置
公开(公告)号：US20020129769A1
公开(公告)日：2002-09-19
申请号：US10102108
申请日：2002-03-19
申请人： Apex Co. Ltd.
发明人： Jae-Ho Kim , Sang-Joon Park
IPC分类号： C23F001/00 , C23C016/00
CPC分类号： C23C16/45544 , C23C16/45514 , C23C16/45538 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/515
摘要： The present invention relates to chemical vapor deposition apparatus. In the chemical vapor deposition apparatus, an RF power source connection portionconnected to an external RF power source is installed on an upper side of a chamber; an RF electrode plate is installed within the chamber to be spaced with a predetermined gap from an inner upper surface of the chamber and to be spaced with a predetermined gap from a showerhead disposed below the RF electrode plate; plasma is generated in a first buffer portion, which is defined by a gap between the RF electrode plate and an upper surface of the showerhead, by means of the electric power applied from the external RF power source to the RF electrode plate; the showerhead is divided into two sections in a vertical direction and a second buffer portion is defined by a space between the two sections; reactant gases are supplied to the first buffer portion in which the plasma is generated; and source gases are supplied to the second buffer portion.
摘要翻译：本发明涉及化学气相沉积装置。在化学气相沉积设备中，连接到外部RF电源的RF电源连接部分安装在室的上侧; 射频电极板安装在腔室内以与腔室的内上表面隔开预定的间隙，并与设置在RF电极板下方的喷头隔开预定间隙; 通过从外部RF电源向RF电极板施加的电力，在由RF电极板和喷头的上表面之间的间隙限定的第一缓冲部分中产生等离子体; 淋浴头在垂直方向上分为两部分，第二缓冲部分由两部分之间的空间限定; 将反应气体供给到其中产生等离子体的第一缓冲部分; 并且源气体被供应到第二缓冲部分。

5. 发明申请

US20010042799A1 Showerhead apparatus for radical-assisted deposition 有权
标题翻译：用于自由基辅助沉积的喷头装置
公开(公告)号：US20010042799A1
公开(公告)日：2001-11-22
申请号：US09776004
申请日：2001-02-02
申请人： APEX Co. Ltd.
发明人： Jae Ho Kim , In Chel Shin , Sang Joon Park , Kwan Goo Rha , Sang Ho Kim
IPC分类号： B05B001/14
CPC分类号： C23C16/45565 , C23C16/452 , C23C16/45574 , H01J37/32082 , H01L21/67069
摘要： There is disclosed a showerhead apparatus for radical-assisted deposition including a showerhead of a two-stair structure separated by a given distance, which has a first buffer for uniformly distributing a raw material gas and a second buffer for uniformly distributing a plasma gas, wherein a plasma is generated within the showerheads and the raw material gas sprayed into the plasma is constantly maintained, thus forming a uniform thin film on a wafer or a substrate. The showerhead apparatus for radical-assisted deposition comprises a raw material gas spray means including a first buffer which is divided into upper and lower layers for uniformly distributing a gas introduced from a raw material gas injection tube, wherein a plurality of raw material gas spray holes for spraying the raw material gas distributed within the first buffer at a given flow rate is formed at a lower plate of the spray means; a plasma generating gas spray means including a second buffer for uniformly distributing a plasma generating gas between with the raw material gas spray means, wherein a plurality of plasma generating gas spray holes and through holes for spraying the plasma generating gas distributed within the second buffer are formed at a lower plate of the spray means, respectively; a guide means for communicating the raw material gas spray holes in the raw material gas spray means and the through holes in the plasma generating gas spray means and for inducing the raw material gas and the plasma generating gas so that they are not mixed; and a RF generating means mounted at one outside side of the raw material gas spray means, wherein a RF rod for applying an outside RF power is included at a lower plate of the RF generating means.
摘要翻译：公开了一种用于自由基辅助沉积的喷头装置，包括分隔给定距离的两层结构的喷头，其具有用于均匀分布原料气体的第一缓冲器和用于均匀分布等离子体气体的第二缓冲器，其中在喷淋头内产生等离子体，并且恒定地保持喷射到等离子体中的原料气体，从而在晶片或基板上形成均匀的薄膜。用于自由基辅助沉积的喷头装置包括原料气体喷射装置，其包括第一缓冲器，其分为上层和下层，用于均匀分布从原料气体注入管引入的气体，其中多个原料气体喷射孔为了喷射在喷射装置的下板处形成以给定流量分布在第一缓冲器内的原料气体; 一种等离子体产生气体喷射装置，包括用于在原料气体喷射装置之间均匀分布等离子体产生气体的第二缓冲器，其中多个等离子体产生气体喷射孔和用于喷射分布在第二缓冲器内的等离子体产生气体的通孔分别形成在喷雾装置的下板上; 用于将原料气体喷射装置中的原料气体喷射孔和等离子体产生气体喷射装置中的通孔连通并引导原料气体和等离子体产生气体使其不混合的引导装置; 以及安装在所述原料气体喷射装置的一个外侧的RF产生装置，其中用于施加外部RF功率的RF杆包括在所述RF产生装置的下板处。

6. 发明授权

US5997603A Sintered metal mould and method for producing the same 失效
标题翻译：烧结金属模具及其制造方法
公开(公告)号：US5997603A
公开(公告)日：1999-12-07
申请号：US864425
申请日：1997-05-28
申请人： Yoshihisa Noro , Junichi Adachi
发明人： Yoshihisa Noro , Junichi Adachi
IPC分类号： B21D37/20 , B22F1/00 , B22F3/02 , B22F3/12 , B22F5/00 , B29C33/38 , C04B35/636 , C04B38/00 , B27C43/18
CPC分类号： C04B35/636 , B22F1/0059 , B22F3/1283 , B22F5/007 , C04B38/00 , B22F2998/00 , B22F2998/10 , C04B2111/00939
摘要： A sintered metal mould formed by plastically forming a material consisting of a metal powder or ceramic powder being mixed with a binder consisting of agar powder, and sintering the material.
摘要翻译：通过将由金属粉末或陶瓷粉末组成的材料与由琼脂粉末组成的粘合剂混合并烧结所述材料而形成的烧结金属模具。

7. 发明申请

US20050217582A1 Chemical vapor deposition method 有权
标题翻译：化学气相沉积法
公开(公告)号：US20050217582A1
公开(公告)日：2005-10-06
申请号：US11080237
申请日：2005-03-14
申请人： Jae-Ho Kim , Sang-Joon Park
发明人： Jae-Ho Kim , Sang-Joon Park
IPC分类号： C23C16/455 , C23C16/44 , C23C16/515 , H01L21/205 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45514 , C23C16/45538 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/515
摘要： The present invention relates to chemical vapor deposition apparatus. In the chemical vapor deposition apparatus, an RF power source connection portion connected to an external RF power source is installed on an upper side of a chamber; an RF electrode plate is installed within the chamber to be spaced with a predetermined gap from an inner upper surface of the chamber and to be spaced with a predetermined gap from a showerhead disposed below the RF electrode plate; plasma is generated in a first buffer portion, which is defined by a gap between the RF electrode plate and an upper surface of the showerhead, by means of the electric power applied from the external RF power source to the RF electrode plate; the showerhead is divided into two sections in a vertical direction and a second buffer portion is defined by a space between the two sections; reactant gases are supplied to the first buffer portion in which the plasma is generated; and source gases are supplied to the second buffer portion.
摘要翻译：本发明涉及化学气相沉积装置。在化学气相沉积装置中，连接到外部RF电源的RF电源连接部安装在室的上侧; 射频电极板安装在腔室内以与腔室的内上表面隔开预定的间隙，并与设置在RF电极板下方的喷头隔开预定间隙; 通过从外部RF电源向RF电极板施加的电力，在由RF电极板和喷头的上表面之间的间隙限定的第一缓冲部分中产生等离子体; 淋浴头沿垂直方向分为两部分，第二缓冲部分由两部分之间的空间限定; 将反应气体供给到其中产生等离子体的第一缓冲部分; 并且源气体被供应到第二缓冲部分。

8. 发明授权

US5602368A Muffler for an internal combustion engine 失效
标题翻译：内燃机消声器
公开(公告)号：US5602368A
公开(公告)日：1997-02-11
申请号：US338902
申请日：1994-11-14
申请人： Hiroto Kaneso
发明人： Hiroto Kaneso
IPC分类号： F01N1/00 , F01N1/02 , F01N1/08 , F01N1/24
CPC分类号： F01N1/24 , F01N1/003 , F01N1/02 , F01N1/08 , F01N1/082 , F01N2490/155
摘要： In the exhaust fluid path, there are provided a porous pipe that is in communication with a muffling chamber via a plurality of small through-holes formed across a wall thickness of the pipe, and an inner pipe of a given length is inserted in the porous pipe with a gap formed between the outer surface of the inner pipe and the inner surface of the porous pipe. The gap is narrowed or closed in its outlet portion and thus the exhaust sound waves flowing through the gap are compressed so that interference and scattering into the muffling chamber of the exhaust sound waves via the small through-holes are promoted, thereby enhancing muffling performance. A plurality of small through-holes may also be formed in the inner pipe. A relatively large opening may be formed in part of the porous pipe to open into the muffling chamber, or a relatively large space may be formed which divides the porous pipe into two pipe elements and opens into the muffling chamber. The porous pipe may be formed as a dual-pipe structure to provide a triple-pipe structure as a whole. Another alternative arrangement may be such that the muffling chamber is partitioned by a wall having a plurality of small through-holes so as to provide a sub-chamber and that the tubular exhaust path opens into the sub-chamber so as to enhance exhaust efficiency.
摘要翻译：在废气流路中，设置有多孔管，其通过多个形成在管的壁厚上的小通孔与消音室连通，并且将具有给定长度的内管插入多孔管在内管的外表面和多孔管的内表面之间形成间隙的管。间隙在其出口部分变窄或闭合，因此流过间隙的排气声波被压缩，从而促进通过小通孔对排气声波的消声室的干扰和散射，从而提高消声性能。也可以在内管中形成多个小的通孔。可以在多孔管的一部分中形成相对大的开口以打开到消声室中，或者可以形成相当大的空间，其将多孔管分成两个管元件并打开到消音室中。多孔管可以形成为双管结构，以提供整体的三管结构。另一种替代方案可以是消音室被具有多个小通孔的壁隔开，以便提供一个子室，并且管状排气路径通向子室，以提高排气效率。

9. 发明授权

US06886491B2 Plasma chemical vapor deposition apparatus 有权
标题翻译：等离子体化学气相沉积装置
公开(公告)号：US06886491B2
公开(公告)日：2005-05-03
申请号：US10102108
申请日：2002-03-19
申请人： Jae-Ho Kim , Sang-Joon Park
发明人： Jae-Ho Kim , Sang-Joon Park
IPC分类号： C23C16/455 , C23C16/44 , C23C16/515 , H01L21/205 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45514 , C23C16/45538 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/515
摘要： The present invention relates to chemical vapor deposition apparatus. In the chemical vapor deposition apparatus, an RF power source connection portionconnected to an external RF power source is installed on an upper side of a chamber; an RF electrode plate is installed within the chamber to be spaced with a predetermined gap from an inner upper surface of the chamber and to be spaced with a predetermined gap from a showerhead disposed below the RF electrode plate; plasma is generated in a first buffer portion, which is defined by a gap between the RF electrode plate and an upper surface of the showerhead, by means of the electric power applied from the external RF power source to the RF electrode plate; the showerhead is divided into two sections in a vertical direction and a second buffer portion is defined by a space between the two sections; reactant gases are supplied to the first buffer portion in which the plasma is generated; and source gases are supplied to the second buffer portion.
摘要翻译：本发明涉及化学气相沉积装置。在化学气相沉积设备中，连接到外部RF电源的RF电源连接部分安装在室的上侧; 射频电极板安装在腔室内以与腔室的内上表面隔开预定的间隙，并与设置在RF电极板下方的喷头隔开预定间隙; 通过从外部RF电源向RF电极板施加的电力，在由RF电极板和喷头的上表面之间的间隙限定的第一缓冲部分中产生等离子体; 淋浴头在垂直方向上分为两部分，第二缓冲部分由两部分之间的空间限定; 将反应气体供给到其中产生等离子体的第一缓冲部分; 并且源气体被供应到第二缓冲部分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式