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    • 9. 发明专利
    • Method of isolation for acoustic resonator device
    • 声学谐振器装置隔离方法
    • JP2014017881A
    • 2014-01-30
    • JP2013217576
    • 2013-10-18
    • Alcatel-Lucent Usa Incアルカテル−ルーセント ユーエスエー インコーポレーテッド
    • BARBER BRADLEY PAULFETTER LINUS ALBERTZIERDT MICHAEL GEORGE
    • H01L41/22H03H3/02H01L41/09H01L41/18H03H9/02H03H9/17H03H9/54
    • H03H3/02H03H9/02118H03H9/172
    • PROBLEM TO BE SOLVED: To isolate bulk acoustic wave devices such as acoustic resonators from detrimental effects that laterally generated waves have on device efficiency and performance.SOLUTION: A method of isolating piezoelectric thin film acoustic resonator devices to prevent laterally propagating waves generated by the device from leaving the device and/or interfering with adjacent devices or systems is provided. Specifically, this isolation technique involves the manipulation or isolation of a piezoelectric material layer between the devices, in an effort to limit the amount of acoustic energy which propagates in a lateral direction away from the device. In one aspect, at least a portion of the piezoelectric material not involved in signal transmission by transduction between RF energy and acoustic energy is removed from the device. In another aspect, the growth of the piezoelectric material is limited to certain regions during fabrication of the device. In a further aspect, the crystal orientation of the piezoelectric material is disrupted or altered during device fabrication so as to form regions having excellent piezoelectric properties and regions exhibiting poor piezoelectric characteristics.
    • 要解决的问题:隔离诸如声谐振器的体声波器件,从而产生横向产生的波对器件效率和性能的不利影响。解决方案:隔离压电薄膜声谐振器器件以防止由器件产生的横向传播波的方法 提供离开设备和/或干扰相邻设备或系统。 具体地说,这种隔离技术涉及在器件之间操作或隔离压电材料层,以努力限制沿横向方向远离器件传播的声能量。 在一个方面,通过RF能量和声能之间的转换而不涉及信号传输的压电材料的至少一部分被从器件中去除。 另一方面,压电材料的生长在制造装置期间被限制到某些区域。 在另一方面,在器件制造期间压电材料的晶体取向被破坏或改变,以便形成具有优异的压电性能的区域和表现出差的压电特性的区域。