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    • 6. 发明专利
    • Nano-structure
    • 纳结构
    • JP2008006581A
    • 2008-01-17
    • JP2007190137
    • 2007-07-20
    • Btg Internatl Ltdビーティージー・インターナショナル・リミテッド
    • DEPPERT KNUT WILFRIEDMAGNUSSON CARL MARTIN HALLSAMUELSON LARS IVARKRINKE THOMAS JOHANNES
    • B82B3/00B05D1/00B82B1/00C01B31/02G03F7/00H01L21/28H01L21/285H01L21/288H01L21/8247H01L27/115H01L29/788H01L29/792H01L49/00
    • H01L21/28273B05D1/007B82Y10/00B82Y40/00G03F7/0002H01L49/006
    • PROBLEM TO BE SOLVED: To provide an improved method allowing the fabrication of a nano-structural device having a very small geometric feature. SOLUTION: The nano-structure is formed on a surface of a semiconductor substrate or a surface of a passivated semiconductor substrate by the process comprising a step of forming one or more electrically charged sites having a preliminarily decided shape, where a first surface part corresponding to the one or more sites is brought into contact with a solid material tool (9) so that an electric charge moves between the tool and the first surface; a step of depositing particles (7) of a second material onto the first surface by making the particles (7) to flow near the one or more electrically charged sites to attract or repulse the particles (7) to or from the one or more electrically charged sites so as to conform the particles (7) to the electrically charged sites, provided in the step of forming, by virtue of the polarity of the charge against the potarity of the electrically charged sites; and a step of creating a chain (148) of a nanometer-size filament or particle, an array of filament (158) of carbon nanotubes or a filament or nanorod (168) of a semiconductor material or a magnetic material. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供一种允许制造具有非常小的几何特征的纳米结构装置的改进方法。 解决方案:通过包括形成具有预定形状的一个或多个带电部位的步骤的方法,在半导体衬底的表面或钝化的半导体衬底的表面上形成纳米结构,其中第一表面 与一个或多个位置对应的部分与固体材料工具(9)接触,使得电荷在工具和第一表面之间移动; 通过使颗粒(7)在一个或多个带电位置附近流动以将颗粒(7)吸引或排斥到一个或多个电气位置之上,从而将第二材料的颗粒(7)沉积到第一表面上的步骤 带电部位,以使颗粒(7)符合形成步骤中提供的颗粒(7),由于电荷的极性相对于带电位点的能力; 以及创建纳米尺寸的细丝或颗粒的链条(148),碳纳米管的细丝(158)阵列或半导体材料或磁性材料的细丝或纳米棒(168)的阵列。 版权所有(C)2008,JPO&INPIT