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81. 发明专利

FR1248145A 未知
公开(公告)号：FR1248145A
公开(公告)日：1960-12-09
申请号：FR812032
申请日：1959-12-03
申请人： VICKERS ELECTRICAL CO LTD
IPC分类号： C30B15/16 , C30B15/30

82. 发明专利

DE968582C 未知
公开(公告)号：DE968582C
公开(公告)日：1958-03-06
申请号：DET0006541
申请日：1952-08-07
申请人： TELEFUNKEN GMBH
发明人： ROTHE DR HORST
IPC分类号： C22B4/00 , C30B15/10 , C30B15/16 , C30B35/00

83. 发明专利

SU113874A1 Способ плавления кремния и устройство для его осуществления 未知
公开(公告)号：SU113874A1
公开(公告)日：1957-11-30
申请号：SU581986
申请日：1956-12-29
申请人： ROMANOV B N
发明人： ROMANOV B N
IPC分类号： C30B15/16 , C30B29/06

84. 发明申请

WO2020001939A1 VERFAHREN UND VORRICHTUNG ZUM ZIEHEN EINES EINKRISTALLS AUS HALBLEITERMATERIAL UND HALBLEITERSCHEIBE AUS SILIZIUM 审中-公开
公开(公告)号：WO2020001939A1
公开(公告)日：2020-01-02
申请号：PCT/EP2019/064553
申请日：2019-06-04
申请人： SILTRONIC AG
发明人： KNERER, Dieter
IPC分类号： C30B15/04 , C30B15/10 , C30B15/14 , C30B15/16 , C30B29/06
摘要： Die Erfindung betrifft ein Verfahren zum Ziehen eines Einkristalls (150) unter Verwendung einer Vorrichtung (100) mit einem Tiegel, die zum Ziehen des Einkristalls (150) aus einer Schmelze in dem Tiegel (130) dient, wobei als Tiegel (130) ein Tiegel verwendet wird, der wenigstens teilweise aus einem Nitrid des Halbleitermaterials besteht, und wobei in der Vorrichtung (100) ein Partialdruck für Stickstoff auf einen Wert von wenigstens 0,1 mbar eingestellt oder eingeregelt wird, und/oder wobei auf Höhe des Tiegels (130) eine den Tiegel umgebende, insbesondere ringförmige, Kühlplatte (121) vorgesehen wird, die in thermischem Kontakt mit einer die Kühlplatte (121) und den Tiegel (130) umgebenden Kühlvorrichtung (120) steht, und/oder wobei auf einer der Schmelze zugewandten Oberfläche (131) des Tiegels Kristallnadeln (156) aus dem Nitrid des Halbleitermaterials gebildet werden, und/oder wobei mittels einer Heizvorrichtung (135) das feste und zu schmelzende Halbleitermaterial (153) von oben und/oder der Tiegel (130) von unten jeweils wenigstens teilweise durch mittels der Heizvorrichtung erzeugter Wärmestrahlung (W) direkt erwärmt werden, sowie eine solche Vorrichtung (100).

85. 发明专利

JPH1053490A APPARATUS FOR PULLING UP SINGLE CRYSTAL 失效
公开(公告)号：JPH1053490A
公开(公告)日：1998-02-24
申请号：JP22591696
申请日：1996-08-07
申请人： SUMITOMO SITIX CORP
发明人： ONIZUKA TOSHIHIRO , KANEKO KYOJIRO , MIZUMOTO HIDEYUKI
IPC分类号： C30B15/00 , C30B15/16 , C30B29/06 , H01L21/208
摘要： PROBLEM TO BE SOLVED: To stably produce a sound single crystal long in the whole length while avoiding the polycrystallization caused by fall of a deposited layer by installing a deposit layer retaining plate for depositing silicon evaporated from a melt in the interior of a furnace in pulling up a silicon single crystal by electron beam dissolution. SOLUTION: A silicon raw material 2 is melted in a furnace body 1 by an electron beam and a silicon single crystal 5 is pulled up from the silicon melt 3 by a CZ method. In order to deposit vapor generated from the silicon melt 3, a deposit layer retaining plate 8 having a rough surface is laid along the interior of a furnace body 1. Preferably, the deposit layer retaining plate 8 has surface roughness (preferably >=10μm shown by maximum height) suitable for subjecting evaporated silicon to film growth in a polycrystalline state having a great number of crystal nuclei. A sintered compact of SiC ceramic may be cited as a material for the film growth.

86. 发明专利

JPH07133185A PRODUCTION OF SINGLE CRYSTAL 失效
公开(公告)号：JPH07133185A
公开(公告)日：1995-05-23
申请号：JP27858593
申请日：1993-11-08
申请人： JAPAN ENERGY CORP
发明人： YAMAMOTO HIROMASA , KANO MANABU
IPC分类号： C30B15/16 , C30B15/20 , C30B29/40 , H01L21/208
摘要： PURPOSE:To provide a process for production of a single crystal capable of producing the long-sized crystal having a high single crystallization rate by a pulling up method. CONSTITUTION:A sub-heater 9 is disposed between a grown crystal 7 which is pulled up together with a seed crystal 6 by a crystal pulling-up shaft 5 from a raw material melt 4 sealed by a liquid sealing material 3 in a crucible 2 installed above a crucible shaft 1 and a heat insulating material 8. The raw material melt 4 is heated by a main heater 10 and the grown crystal 7 is heated by the sub-heater 9. The amt. of the electric power to be supplied to the sub- heater 9 is controlled to suppress the fluctuation in the electric power of the main heater 10 by diameter control within a prescribed range. As a result, the solid-liquid boundary of the grown crystal and the raw material melt is maintained in the stable state during the crystal growth, by which the production of the long-sized single crystal is enabled. The establishment of the operating conditions of various kinds of single crystal growth furnaces is easily executed and the process is extremely industrially useful.

87. 发明专利

JPH0741392A SILICON SINGLE CRYSTAL AND PRODUCTION THEREOF 失效
公开(公告)号：JPH0741392A
公开(公告)日：1995-02-10
申请号：JP18854193
申请日：1993-07-29
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： IWASAKI TOSHIO , KOJIMA KIYOSHI , TAKEBAYASHI MASARU , NAKASHIZU TSUNEO
IPC分类号： C30B15/00 , C30B15/16 , C30B29/06 , C30B33/02 , H01L21/208
摘要： PURPOSE:To produce a silicon single crystal by the Czochralski method as a silicon single crystal inhibiting he occurrence of etch pits of >=0.07mum size when a silicon wafer sliced from the silicon single crystal is subjected to mirror polishing and ammonia cleaning. CONSTITUTION:In a process for producing a silicon single crystal by the Czochralski method, a silicon single crystal is passed through the temp. range of 1,100-850 deg.C in =0.07mum size when a silicon wafer sliced from the silicon single crystal is subjected to mirror polishing and ammonia cleaning.

88. 发明专利

JPH0114169B2 失效
公开(公告)号：JPH0114169B2
公开(公告)日：1989-03-09
申请号：JP12346285
申请日：1985-06-06
申请人： UEDOTETSUKU CORP
发明人： EDEYUAADO PINKAASOFU
IPC分类号： C30B15/16 , C01B33/02 , C30B15/10 , C30B15/14 , C30B29/06 , H01L21/18 , H01L21/208

89. 发明专利

JPS61146786A DEVICE FOR MANUFACTURING SEMICONDUCTOR SINGLE CRYSTAL 失效
公开(公告)号：JPS61146786A
公开(公告)日：1986-07-04
申请号：JP26532184
申请日：1984-12-18
申请人： TOSHIBA CORP
发明人： SAITO TETSUO
IPC分类号： C30B15/16 , C30B15/14 , H01L21/18 , H01L21/208
摘要： PURPOSE:To manufacture easily a high-purity semiconductor single crystal by providing an endothermic body consisting of a noncarbonaceous heat-resistant member and a heater consisting of an infrared heater and an infrared reflector and formed by the noncarbonaceous heat-resistant member. CONSTITUTION:A heater is composed of an infrared heater 15 coated with a heat-resistant member and an infrared reflector 18 capable of reflecting efficiently infrared rays from the infrared radiation heater 15 at high temps. and coated with an infrared ray-transmissive and heat-resistant member. Consequently, the heat loss is reduced, and hence a semiconductor material can be melted with less electric power to manufacture a semiconductor single crystal. An endothermic body 19 furnished at the outside of a crucible 2 helps to save the power. Since the heater and the endothermic body 19 both exposed to high temps. are formed of a noncarbonaceous heat-resistant member in the device for manufacturing a semiconductor single crystal, carbon is never brought into the semiconductor crystal, and the desired high-purity single crystal can be obtained.

90. 发明专利

JPS5945991A Method for controlling diameter of single crystal 失效
标题翻译：用于控制单晶直径的方法
公开(公告)号：JPS5945991A
公开(公告)日：1984-03-15
申请号：JP15135482
申请日：1982-08-31
申请人： Nippon Telegr & Teleph Corp , Sumitomo Electric Ind Ltd
发明人： MIYAZAWA SHINTAROU , NAKAI RIYUUSUKE
IPC分类号： C30B15/18 , C30B15/16 , C30B15/22 , H01L21/208
CPC分类号： C30B15/22 , C30B15/16
摘要： PURPOSE: To control the diameter of a single crystal at a definite value, in the pulling of the single crystal using the Czochralski method, by heating the molten liquid around the single crystal locally with infrared heating.
CONSTITUTION: In the pulling of a single crystal by the Czochralski method, a pair of condenser-type infrared heaters 7 are placed at the symmetrical positions slantly above the crucible 5, and the infrared ray reflected by the condenser mirror 9 is focused to a part 10 of the molten raw material liquid 1 around the single crystal. The lowering of the height of the molten liquid according to the growth of the crystal is calculated by the computer 12 from the change in the weight of the crystal, and the angle and the position of the infrared heater 7 are controlled by the computer so as to keep the focus of the infrared ray and the distance of the part 10 heated by the infrared heater 7 from the center of the crucible to the preset levels. The symmetrical parts 10, 10 at the circumference of the single crystal 3 are concentratedly irradiated with infrared ray, and the surface of the molten liquid is locally heated at a high temperature, however, the ring 11 can be heated uniformly by the rotation of the crucible 5.
COPYRIGHT: (C)1984,JPO&Japio
摘要翻译：目的：为了以一定的值控制单晶的直径，在使用Czochralski法拉伸单晶时，通过红外加热局部加热单晶周围的熔融液体。构成：在通过Czochralski法拉制单晶时，将一对冷凝器型红外线加热器7放置在坩埚5上方的对称位置处，并且将由聚光镜9反射的红外线聚焦到部分 10个熔融原料液1围绕单晶。计算机12根据晶体重量的变化计算熔融液体的高度随着晶体生长而降低，红外加热器7的角度和位置由计算机控制，以便将红外线的焦点和由红外线加热器7加热的部分10的距离从坩埚的中心保持到预设水平。在单晶3的周围的对称部分10,10被红外线集中照射，并且熔融液体的表面在高温下被局部加热，然而，可以通过旋转来均匀地加热环11 坩埚5。

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