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81. 发明授权

EP1073171B1 Lateral injection vertical cavity surface-emitting laser 有权
标题翻译：表面发射激光器的垂直腔横向喷射
公开(公告)号：EP1073171B1
公开(公告)日：2004-10-13
申请号：EP00306045.6
申请日：2000-07-17
申请人： Agere Systems Optoelectronics Guardian Corporation
发明人： Chirovsky, Leo Maria , D'Asaro, Lucian Arthur , Hobson, William Scott , Lopata, John
IPC分类号： H01S5/183
CPC分类号： H01S5/18341 , H01S5/0421 , H01S5/0422 , H01S5/18308 , H01S5/18327 , H01S5/18369 , H01S5/18377 , H01S5/2063

82. 发明公开

EP0981843A1 LASER DEVICES 失效
标题翻译：激光装置
公开(公告)号：EP0981843A1
公开(公告)日：2000-03-01
申请号：EP98921631.2
申请日：1998-05-15
申请人： UNIVERSITY OF BRISTOL
发明人： DOWD, Philip , WHITE, Ian, Hugh , PENTY, Richard, Vincent , HEARD, Peter, John , ALLEN, Geoffrey, Charles , TAN, Michael, Renne, Ty
IPC分类号： H01S3/085
CPC分类号： H01S5/18355 , H01S5/1078 , H01S5/18308 , H01S5/18327 , H01S5/2063 , H01S5/2081
摘要： A vertical cavity surface emitting laser device (10) has a discontinuity (11) formed within the body of the device. When the device is in use, the direction of polarisation of light emitted from the device is substantially aligned with a boundary of the discontinuity.

83. 发明公开

EP0712182A3 Surface-emitting laser 失效
标题翻译：表面发射激光器
公开(公告)号：EP0712182A3
公开(公告)日：1997-01-22
申请号：EP95308105.6
申请日：1995-11-13
申请人： SHARP KABUSHIKI KAISHA
发明人： Dawson, Martin David , Duggan, Geoffrey , Bestwick, Tomothy David
IPC分类号： H01S3/085 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/0267 , H01S5/1064 , H01S5/18308 , H01S5/18327 , H01S5/18333 , H01S5/18358 , H01S5/18388 , H01S5/2063 , H01S5/3421 , H01S5/3428 , H01S2301/18
摘要： A surface-emitting laser comprises an optical cavity including a multiple quantum well (MQW) active region (16) providing a source of optical emission in use. Top and bottom mirrors (22 and 12) are disposed respectively above and below the MQW active region (16). The MQW active region (16) is profiled so that it has a greater number of quantum wells in a central portion (16a) thereof than in a peripheral portion (16b) thereof (Figure 2). In alternative embodiments, (a) a current- guiding region (26) is profiled so that it has a first current-guiding portion (26a) with a relatively smaller aperture therethrough extending over a central portion (16a) of the MQW active region (16), and a second current-guiding portion (26b) with a relatively larger aperture therethrough (Figure 3); and (b) one of the mirrors (20) has a layer structure which, in a central portion of the cross-sectional area of such mirror, is different to that in a peripheral portion of said cross-sectional area (Figure 4).

84. 发明公开

EP0674367A1 VCSEL with lateral index guide 失效
标题翻译：激光打印机激光打标机和激光打标机。
公开(公告)号：EP0674367A1
公开(公告)日：1995-09-27
申请号：EP94104719.3
申请日：1994-03-24
申请人： MOTOROLA, INC.
发明人： Ackley Donald E.
IPC分类号： H01S3/085
CPC分类号： H01S5/18391 , H01S5/0207 , H01S5/18308 , H01S5/18327 , H01S5/2059
摘要： A VCSEL including a first mirror stack, an active region and a second mirror stack positioned on a substrate having a surface lying in a first plane and a centrally located offset area of the surface lying in a second plane parallel to the first plane and spaced therefrom. Portions of the active region and the first and second mirror stacks being offset from surrounding portions by the offset area in the surface of the substrate so as to define a lateral waveguide which confines the operating region of the VCSEL.
摘要翻译：一种VCSEL，其包括位于基板上的第一反射镜叠层，有源区和第二反射镜叠层，该基板具有位于第一平面中的表面和位于与第一平面平行的第二平面中的表面的位于中心的偏移区域，。有源区域和第一和第二反射镜叠层的部分通过衬底表面中的偏移区域与周围部分偏移，以便限定限制VCSEL的操作区域的横向波导。

85. 发明公开

EP0618625A2 Fabrication of electronic devices with an internal window 失效
标题翻译：芬斯特·芬克斯（Anstenung von elektronischen）Anordnungen mit internem Fenster。
公开(公告)号：EP0618625A2
公开(公告)日：1994-10-05
申请号：EP94302070.1
申请日：1994-03-23
申请人： AT&T Corp.
发明人： Vakhshoori, Daryoosh , Wynn, James Dennis , Zydzik, George John
IPC分类号： H01L33/00 , H01S3/085 , H01L21/266 , H01S3/19
CPC分类号： H01S5/18327 , H01L33/0062 , H01S5/0201 , H01S5/2063 , H01S5/423
摘要： A process is described of producing devices, such as vertical cavity surface emitting lasen or resonant cavity light emitting devices, with an insulating region between an active region and top electrode, the insulating region having a centrally located window permitting passage of the electric current from the top electrode to the bottom electrode centrally of the active region. The insulating region is formed by ion implantation. The window is defined by a photoresist mask formed by angle etching a photoresist masking layer by RIE, so as to form the mask with parallel side walls inclined at an angle to the normal to the masked surface. The ion implantation is conducted at the same angle and parallel to the side walls of the of the mask. This permits fabrication of devices individually or in arrays. An exemplary independently addressable top emitting 8×18 VCSEL array (VCSELA) with GaAs multi-quantum well gain region was fabricated with excellent properties using the angle etched masks. The typical threshold current and voltage of the exemplary devices in this array are approximately 4 mA and 2.65V respectively. The L-I-V characteristics of the devices do not change by current annealing. Also, a comparison between devices produced by using the novel angled implantation mask and devices produced by using conventional lithography implantation mask indicates the importance of the implantation mask preparation on the final VCSEL operating characteristics.
摘要翻译：具有在绝缘离子注入区域中具有内部窗口的制造电子器件，所述器件包括半导体结构以及顶部和底部金属电极到该结构，包括在电极的顶表面上沉积足够厚度的光致抗蚀剂层防止注入离子到达顶部电极下方的半导体材料，图案化光致抗蚀剂层，并将质子离子注入到半导体材料中，形成具有居中定位的窗口的绝缘区域。其中光致抗蚀剂层通过用RIE进行角度蚀刻来图案化，以产生掩模图案侧壁，其倾斜预定角度，切割成与顶表面垂直并且彼此平行，并且离子的注入在与光致抗蚀剂图案的侧壁平行的角度。

86. 发明公开

EP2478600A4 SURFACE-EMITTING LASER, SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNING APPARATUS, AND IMAGE FORMING APPARATUS 有权转让
标题翻译：表面发射激光器，OBERFLÄCHENEMITTIERENDES激光器阵列，光学及摄像装置拾取
公开(公告)号：EP2478600A4
公开(公告)日：2014-09-10
申请号：EP10817307
申请日：2010-09-14
申请人： RICOH CO LTD
发明人： JIKUTANI NAOTO , HARASAKA KAZUHIRO , SUGAWARA SATORU , SATO SHUNICHI
IPC分类号： H01S5/183
CPC分类号： H01S5/18313 , B82Y20/00 , H01S5/0014 , H01S5/18327 , H01S5/1835 , H01S5/18355 , H01S5/18369 , H01S5/18394 , H01S5/2009 , H01S5/3054 , H01S5/3202 , H01S5/3406 , H01S5/423 , H01S2301/166

87. 发明公开

EP2478600A1 SURFACE-EMITTING LASER, SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNING APPARATUS, AND IMAGE FORMING APPARATUS 有权转让
标题翻译：表面发射激光器，OBERFLÄCHENEMITTIERENDES激光器阵列，光学及摄像装置拾取
公开(公告)号：EP2478600A1
公开(公告)日：2012-07-25
申请号：EP10817307.1
申请日：2010-09-14
申请人： Ricoh Company, Limited
发明人： JIKUTANI, Naoto , HARASAKA, Kazuhiro , SUGAWARA, Satoru , SATO, Shunichi
IPC分类号： H01S5/183
CPC分类号： H01S5/18313 , B82Y20/00 , H01S5/0014 , H01S5/18327 , H01S5/1835 , H01S5/18355 , H01S5/18369 , H01S5/18394 , H01S5/2009 , H01S5/3054 , H01S5/3202 , H01S5/3406 , H01S5/423 , H01S2301/166
摘要： A surface-emitting laser includes a substrate; a lower semiconductor multilayer film reflector disposed on the substrate; a resonator structure including an active layer and disposed on the lower semiconductor multilayer film reflector; and an upper semiconductor multilayer film reflector disposed on the resonator structure. The second semiconductor multilayer film reflector includes a confinement structure in which a current passage region is surrounded by an oxidized portion of a selectively oxidized layer containing aluminum. An emission region includes a central portion and a peripheral portion, the peripheral portion being covered with a transparent dielectric film whose reflectivity is lower than a reflectivity of the central portion. The selectively oxidized layer has a thickness in a range from 30 nm to 40 nm. The temperature at which an oscillation threshold current is minimized is 60°C or lower.

88. 发明公开

EP2395612A1 Surface emitting laser element, surface emitting laser array, optical scanning unit, image forming apparatus and method of manufacturing surface emitting laser element 有权
标题翻译： Oberflächenemittierendes激光元件oberflächenemittierendes激光器阵列，光学扫描装置和图像形成装置和方法，用于制造表面发射激光器元件
公开(公告)号：EP2395612A1
公开(公告)日：2011-12-14
申请号：EP11168290.2
申请日：2011-05-31
申请人： Ricoh Company, Ltd.
发明人： Irinoda,, Mitsugu
IPC分类号： H01S5/183 , H01S5/042 , H01S5/42 , B41J2/45
CPC分类号： H01S5/0425 , B41J2/455 , B41J2/473 , H01S5/18311 , H01S5/18327 , H01S5/18347 , H01S5/18352 , H01S5/18386 , H01S2301/176
摘要： A surface emitting laser element includes a light emission part (100a) having a mesa structure. The light emission part includes a lower reflector (103), a resonator structure including an active layer (105) and an upper reflector (107). The lower reflector, the resonator structure and the upper reflector are laminated on a substrate (101). A peripheral part of a top surface of the mesa structure is covered by a dielectric layer (111a) that has a tapered surface such that a thickness decreases in a direction toward an outermost part, a taper angle (δ) of the tapered surface with respect to a surface of the substrate is smaller than a slope angle (θ) of a side wall of the mesa structure with respect to the surface of the substrate, and an end part of the dielectric layer coincides with an end part of the upper reflector.
摘要翻译：一种表面发射激光器元件包括具有台面结构的光发射部分（100A）。光发射部分包括下部反射体（103），谐振器结构，其包括上活性层（105），并在上部反射器（107）。下部反射器，所述谐振器结构和上部反射器层叠在一基片（101）。台面结构的顶表面的外围部分由（111A）做了介电层覆盖具有锥形表面搜索做了厚度沿朝向到最外部分减小相对于锥形表面的锥角（“）于基板的表面比所述台面结构相对于所述衬底的表面的侧壁的倾斜角（¸）更小，并结束该介电层的一部分与重合结束上部反射器的一部分。

89. 发明公开

EP2381544A2 Surface emitting laser device, surface emitting laser array, optical scanning device, image forming apparatus, and manufacturing method of surface emitting laser device 有权
标题翻译：表面发射激光器器件，oberflächenemittierendes激光器阵列，光学扫描装置和图像形成装置及其制造方法的表面发射激光器器件
公开(公告)号：EP2381544A2
公开(公告)日：2011-10-26
申请号：EP11162686.7
申请日：2011-04-15
申请人： Ricoh Company, Limited
发明人： Shouji, Hiroyoshi , Sato, Shunichi
IPC分类号： H01S5/183 , H01S5/028
CPC分类号： H01S5/18344 , B41J2/471 , H01S5/18311 , H01S5/18327 , H01S5/18338 , H01S5/18347 , H01S5/1835 , H01S5/18355 , H01S5/18377 , H01S5/18386 , H01S5/18391 , H01S5/3202 , H01S5/423 , H01S2301/18
摘要： A disclosed surface emitting laser device (100) includes a light emitting section having a mesa structure where a lower reflection mirror (103), an oscillation structure, and an upper reflection mirror (107) are laminated on a substrate (101), the oscillation structure including an active layer (105), the upper reflection mirror including a current confined structure where an oxide (108a) surrounds a current passage region (108b), a first dielectric film that coats the entire surface of an emitting region (125) of the light emitting section, the transparent dielectric-including a part where the refractive index is relatively high (122) and a part where the refractive index is relatively low (121), and a second dielectric film that coats a peripheral part on the upper surface of the mesa structure. Further, the second dielectric film includes a lower dielectric film (11a) and an upper dielectric film (111b), and the lower dielectric film is coated with the upper dielectric film.
摘要翻译：一种盘游离缺失表面发射激光器器件（100）包括具有台面结构，其中振荡结构的下部反射镜（103），并且在上反射镜（107）层叠而成的基板（101），所述振荡上的发光部结构，其包括有源层（105），上反射镜，包括一电流限制结构，其中在氧化物（108A）围绕电流通过区域（108B），第一电介质膜做涂层发光区域（125）的整个表面上发光部，所述透明电介质包括其中折射率比较高的（122）的一部分，并且其中的折射率相对较低的部分（121）和第二电介质膜那样涂覆在上表面上的周边部分的台面结构。此外，该第二介电电影包括下介电电影（11A），并且在上电介质电影（111B），和下电介质电影涂覆有上介电电影。

90. 发明公开

EP1876679A1 Surface-emitting type semiconductor laser 审中-公开
标题翻译： OberflächenemittierenderHalbleiterlaser
公开(公告)号：EP1876679A1
公开(公告)日：2008-01-09
申请号：EP07013248.5
申请日：2007-07-06
申请人： Seiko Epson Corporation
发明人： Mochizuki, Masamitsu
IPC分类号： H01S5/183
CPC分类号： H01S5/18386 , H01S5/18311 , H01S5/18327 , H01S2301/166 , H01S2301/176
摘要： A surface-emitting type semiconductor laser includes: a lower mirror (10); an active layer (103) formed above the lower mirror (10); and an upper mirror (20) formed above the active layer (103), wherein the upper mirror (20) includes a first region (70) in which a plurality of holes (60) are formed and a second region (72) inside the first region (70) in which no hole is formed, the second region (72) is in a circular shape as viewed in a plan view, the circular shape has a radius with which an energy increasing rate in the active layer (103) becomes positive with a lower-order resonance mode component and becomes negative with a higher-order resonance mode component, and the holes (60) have a depth with which the energy increasing rate becomes positive with the lower-order resonance mode component, and becomes negative with the higher-order resonance mode component.
摘要翻译：表面发射型半导体激光器包括：下反射镜（10）; 形成在所述下反射镜（10）上方的活性层（103）; 以及形成在所述有源层（103）上方的上反射镜（20），其中所述上反射镜（20）包括其中形成有多个孔（60）的第一区域（70）和位于所述第一区域没有形成孔的第一区域（70），第二区域（72）在平面图中呈圆形，圆形形状具有活性层（103）中的能量增加率成为的半径具有较低阶共振模式分量的正值，并且随着高次谐振模式分量而变为负，并且空穴（60）具有随着低次谐振模式分量而增加能量变为正的深度，并且变为负具有高次谐振模式分量。

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