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81. 发明申请

WO2013050670A1 MODULE DE COMMANDE POUR IMPLANTEUR IONIQUE EN MODE IMMERSION PLASMA 审中-公开
标题翻译：用于离子注入模式的离子植入物的控制模块
公开(公告)号：WO2013050670A1
公开(公告)日：2013-04-11
申请号：PCT/FR2012/000391
申请日：2012-10-03
申请人： ION BEAM SERVICES , TORREGROSA, Frank , ROUX, Laurent
发明人： TORREGROSA, Frank , ROUX, Laurent
IPC分类号： H01J37/32 , C23C14/48 , G01R19/00
CPC分类号： H01J37/243 , G01R19/0061 , H01J37/32174 , H01J37/32311 , H01J37/32412 , H01J37/32422 , H01J37/32917 , H01J37/32972
摘要： La présente invention concerne un module de commande pour implanteur ionique comportant une alimentation, cette alimentation comprenant : - un générateur électrique HT dont le pôle positif est raccordé à la masse, - un premier interrupteur SW1 dont le premier pôle est raccordé au pôle négatif du générateur HT et dont le second pôle est raccordé à la borne de sortie S de cette alimentation, - un deuxième interrupteur SW2 dont le premier pôle est raccordé à la borne de sortie S et dont le second pôle est relié à une borne de neutralisation N. De plus, ce module de commande comprend un circuit de mesure du courant AMP qui s'écoule entre le second pôle du second interrupteur SW2 et la borne de neutralisation N. L'invention vise également un implanteur ionique muni de ce module de commande.
摘要翻译：本发明涉及一种用于离子注入机的控制模块，包括电源，所述电源包括：发电机（HT），其正极连接到地面; 第一开关（SW1），其第一极连接到发电机（HT）的负极，其第二极连接到所述电源的输出端子; 以及第二开关（SW2），其第一极连接到输出端子（S），其第二极端连接到中性端子（N）。此外，所述控制模块包括用于测量在第二开关（SW2）的第二极与中性端子（N）之间流动的电流的电路（AMP）。本发明还涉及一种设置有所述控制模块的离子注入机。

82. 发明申请

WO2012078569A1 PLASMA PROCESSING SYSTEM CONTROL BASED ON RF VOLTAGE 审中-公开
标题翻译：基于射频电压的等离子体处理系统控制
公开(公告)号：WO2012078569A1
公开(公告)日：2012-06-14
申请号：PCT/US2011/063422
申请日：2011-12-06
申请人： LAM RESEARCH CORPORATION , VALCORE, JR., John C. , POVOLNY, Henry S.
发明人： VALCORE, JR., John C. , POVOLNY, Henry S.
IPC分类号： G01R31/26
CPC分类号： H01J37/32137 , G05B15/02 , G05B19/418 , G05B2219/45031 , H01J37/32082 , H01J37/32174 , H01J37/32183 , H01J37/32917 , H01J37/32926 , H01J37/3299
摘要： A method for controlling a plasma processing system using wafer bias information derived from RF voltage information is proposed. The RF voltage is processed via an analog or digital methodology to obtain peak voltage information at least for each of the fundamental frequencies and the broadband frequency. The peak voltage information is then employed to derive the wafer bias information to serve as a feedback or control signal to hardware/software of the plasma processing system.
摘要翻译：提出了使用从RF电压信息导出的晶片偏置信息来控制等离子体处理系统的方法。 RF电压通过模拟或数字方法进行处理，以获得至少对于每个基本频率和宽带频率的峰值电压信息。然后使用峰值电压信息来导出晶片偏置信息以用作到等离子体处理系统的硬件/软件的反馈或控制信号。

83. 发明申请

WO2011090850A2 PROCESS CONDITION SENSING DEVICE FOR PLASMA CHAMBER 审中-公开
标题翻译：用于等离子体室的过程状态感测装置
公开(公告)号：WO2011090850A2
公开(公告)日：2011-07-28
申请号：PCT/US2011020872
申请日：2011-01-11
申请人： KLA TENCOR CORP , JENSEN EARL , SUN MEI
发明人： JENSEN EARL , SUN MEI
IPC分类号： H05H1/46 , G01N27/60 , H01L21/205
CPC分类号： H01J37/32954 , G01R19/0061 , H01J37/32 , H01J37/32917 , H01J37/32935 , H01L21/67069 , H01L21/67253 , H01L22/34
摘要： A sensing device for measuring a plasma process parameter in a plasma chamber for processing workpieces may include a substrate with one or more sensor embedded in the substrate. The substrate can have a surface made of substantially the same material as workpieces that are plasma processed in the plasma chamber. Each sensor can include a collector portion made of substantially the same material as the substrate surface. The collector portion includes a surface that is level with the surface of the substrate. Sensor electronics are embedded into the substrate and coupled to the collector portion. When the substrate surface is exposed to a plasma one or more signals resulting from the plasma can be measured with the sensor(s).
摘要翻译：用于测量用于处理工件的等离子体室中的等离子体工艺参数的感测装置可以包括具有嵌入在衬底中的一个或多个传感器的衬底。基板可以具有由在等离子体室中等离子体处理的与工件基本相同的材料制成的表面。每个传感器可以包括由与基底表面基本相同的材料制成的收集器部分。集电器部分包括与衬底的表面平齐的表面。传感器电子器件嵌入基板并耦合到收集器部分。当衬底表面暴露于等离子体时，可以用传感器测量由等离子体产生的一个或多个信号。

84. 发明公开

EP3229265A1 METHODS AND APPARATUS FOR DEPOSITING AND/OR ETCHING MATERIAL ON A SUBSTRATE 有权
标题翻译：用于在衬底上沉积和/或蚀刻材料的方法和设备
公开(公告)号：EP3229265A1
公开(公告)日：2017-10-11
申请号：EP17172932.0
申请日：2013-02-27
申请人： Oxford Instruments Nanotechnology Tools Limited
发明人： MCNIE, Mark Edward , COOKE, Michael Joseph , LEA, Leslie Michael
IPC分类号： H01L21/3213 , H01L21/3065
CPC分类号： H01J37/32926 , C23C16/50 , C23C16/52 , G05B19/418 , G05B2219/34198 , H01J37/32449 , H01J37/32816 , H01J37/32834 , H01J37/32917 , H01J2237/24564 , H01J2237/24585 , H01J2237/248 , H01J2237/3321 , H01J2237/334 , H01L21/306 , H01L21/30655 , H01L22/12 , H01L22/26
摘要： Methods are disclosed for depositing material onto and/or etching material from a substrate in a surface processing tool having a processing chamber, a controller and one or more devices for adjusting the process parameters within the chamber. The method comprises: the controller instructing the one or more devices according to a series of control steps, each control step specifying a defined set of process parameters that the one or more devices are instructed to implement, wherein at least one of the control steps comprises the controller instructing the one or more devices to implement a defined set of constant process parameters for the duration of the step, including at least a chamber pressure and gas flow rate through the chamber, which duration is less than the corresponding gas residence time (T gr ) of the processing chamber for the step.
摘要翻译：公开了用于在具有处理室，控制器和一个或多个用于调节室内的工艺参数的装置的表面处理工具中将材料沉积到衬底上和/或从衬底蚀刻材料的方法。该方法包括：控制器根据一系列控制步骤指示一个或多个设备，每个控制步骤指定一个或多个设备被指示实施的定义的一组过程参数，其中至少一个控制步骤包括所述控制器指示所述一个或多个装置在所述步骤的持续时间内实施限定的恒定过程参数组，所述恒定过程参数包括至少腔室压力和通过所述腔室的气体流量，所述持续时间小于相应的气体停留时间（Tgr ）用于该步骤的处理室。

85. 发明公开

EP3206223A1 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体处理方法和等离子体处理设备
公开(公告)号：EP3206223A1
公开(公告)日：2017-08-16
申请号：EP15849097.9
申请日：2015-09-25
申请人： Tokyo Electron Limited
发明人： HIRAYAMA, Yusuke , MIYAGAWA, Masaaki
IPC分类号： H01L21/3065 , C23C16/42 , C23C16/44 , C23C16/50 , H01L21/205 , H05H1/46
CPC分类号： H01J37/32862 , B29C59/14 , C23C16/0272 , C23C16/44 , C23C16/4404 , C23C16/4405 , C23C16/509 , H01J37/32009 , H01J37/32082 , H01J37/32165 , H01J37/32477 , H01J37/32495 , H01J37/32532 , H01J37/32917 , H01J2237/334 , H01L21/205 , H01L21/3065 , H05H1/46
摘要： To protect a member within a chamber from a plasma, thereby preventing the member from change of the properties and consumption. This plasma processing method comprises a film formation step, a plasma processing step, and a removal step. In the film formation step, a silicon-containing film is formed on the surface of a member within a chamber by means of plasmas of a silicon-containing gas and a reducing gas. In the plasma processing step, an object to be processed introduced into the chamber is plasma-processed by means of a plasma of a processing gas after the formation of the silicon-containing film on the surface of the member. In the removal step, the silicon-containing film is removed from the surface of the member by means of a plasma of a fluorine-containing gas after the plasma-processed object is carried out of the chamber.
摘要翻译：为了保护等离子体室内的构件，从而防止构件改变性能和消耗。该等离子体处理方法包括膜形成步骤，等离子体处理步骤和去除步骤。在成膜工序中，利用含硅气体和还原性气体的等离子体，在腔室内部件的表面形成含硅膜。在等离子体处理步骤中，在构件表面上形成含硅膜之后，通过处理气体的等离子体对引入腔室中的待处理物体进行等离子体处理。在去除步骤中，在将等离子体处理后的物体从腔室中取出之后，利用含氟气体的等离子体将含硅膜从部件的表面去除。

86. 发明公开

EP2717292A4 MASS SPECTROMETRY DEVICE 有权转让
标题翻译：群发器
公开(公告)号：EP2717292A4
公开(公告)日：2015-04-22
申请号：EP12791957
申请日：2012-04-09
申请人： HITACHI HIGH TECH CORP
发明人： SAMPEI MAKOTO
IPC分类号： H01J49/06 , G01N27/62 , H01J49/10 , H01J49/42
CPC分类号： H01J49/02 , G01N27/624 , H01J37/32862 , H01J37/32917 , H01J37/32935 , H01J37/32981 , H01J37/3299 , H01J49/067
摘要： When a specimen from a specimen ionizing unit (ion source) is introduced, the specimen, if not sufficiently ionized, is caused to remain in sites other than a pore in an introducing section and then deposited as a product such as an oxide or carbide by an energy such as heat. The deposited deposit causes a deterioration in the performance of the mass spectrometry device. The present invention has a specimen supply source, a specimen ionizing section for ionizing a specimen supplied from the specimen supply source, a specimen-introduction regulating chamber into which ions of the ionized specimen are introduced, a differential evacuation chamber located at the downstream side of the specimen-introduction regulating chamber, and an analyzing section located at the downstream side of the differential evacuation chamber, in which a discharge generating means is formed for generating an electric discharge inside at least one of the specimen-introduction regulating chamber and the differential evacuation chamber. The discharge generating means has a specimen introducing section electrode and a first-pore-section-forming member (electrode) located oppositely to each other inside the specimen-introduction regulating chamber, or a first-pore-section-forming member (electrode) and a second-pore-section-forming member (electrode) located oppositely to each other inside the differential evacuation chamber.

87. 发明公开

EP2806714A3 Remote plasma system having self management function and self management method of the same 审中-公开
标题翻译：具有自管理功能和自我管理方法及其远程等离子体系统
公开(公告)号：EP2806714A3
公开(公告)日：2015-01-07
申请号：EP13182154.8
申请日：2013-08-29
申请人： Choi Dae, Kyu
发明人： Choi Dae, Kyu
IPC分类号： H05H1/46 , H01J37/32
CPC分类号： H01J37/32935 , H01J37/32357 , H01J37/32917 , H01J37/3299 , H05H1/46 , H05H2001/463
摘要： A remote plasma system having a self management function of the present invention measures an operating state of a remote plasma generator while a remote plasma generator operates, which generates plasma and remotely supplies the generated plasma to a process chamber, thereby allowing a process manager to check the measured operating state and performing a required process control depending on an operating state. According to the remote plasma system having the self management function of the present invention, it is possible to check operating state information of the remote plasma generator in real time so as to judge whether the remote plasma generator normally operates and immediately sense occurrence of an error during the operation. Further, it is possible to check in real time the operating state information of the remote plasma generator and plasma treatment process progress state information in the process chamber while the plasma generated from the remote plasma generator is supplied to the process chamber. Therefore, a process manager can determine an operating state of the remote plasma system in real time and immediately cope with an abnormal operation when the abnormal operation occurs. Further, the process manager can determine the system in real time at the time when maintenance of the system is required, thereby increasing maintenance efficiency.

88. 发明公开

EP2562784A3 Sensoranordnung zur Charakterisierung von Plasmabeschichtungs-, Plasmaätz- und Plasmabehandlungsprozessen sowie Verfahren zur Ermittlung von Kenngrößen in diesen Prozessen 有权
标题翻译：用于参数在这些过程中的确定等离子喷涂，等离子蚀刻和等离子处理过程和程序的表征传感器布置
公开(公告)号：EP2562784A3
公开(公告)日：2014-06-25
申请号：EP12005982.9
申请日：2012-08-22
申请人： Helmholtz-Zentrum Berlin für Materialien und Energie GmbH
发明人： Ellmer, Klaus , Harbauer, Karsten
IPC分类号： H01J37/32 , G01B7/06
CPC分类号： H01J37/32935 , G01B7/066 , H01J37/32917 , H05H1/0075
摘要： Bei der beanspruchten Sensoranordnung ist die dem Plasmaätz-, Plasmabeschichtungs- oder Plasmabehandlungsprozess ausgesetzte Frontelektrode (2) des Schwingquarzes (1) isoliert gegen das Gehäuse (5) der Anordnung und als planare Langmuir-Sonde ausgebildet und mit einem außerhalb der Plasmaanlage angeordneten Strom-Spannungs-Kennlinien-Messgerät (14) zur Messung der Langmuir-Kennlinie (I L (U)) verbunden, gegenüber der Rückelektrode (3) des Schwingquarzes (1) ist ein pyrometrischer Sensor (4) zur Messung der mittleren Temperatur (T Q ) der Rückelektrode (3) des Schwingquarzes (1) angeordnet und der Schwingquarz (1) mit seiner als planare Langmuir-Sonde ausgebildeten Frontelektrode (2) und der pyrometrische Sensor (4) bilden einen Kombinationssensor (10), der in einem Sensorgehäuse (5) angeordnet ist, das eine der Frontelektrode (2) des Schwingquarzes (1) gegenüber liegende Öffnung aufweist, außerhalb des Sensorgehäuses (5) zwischen dessen Öffnung und der Plasmaquelle in der Plasmaanlage eine schwenkbare Abschirmblende (9) angeordnet ist, der Kombinationssensor (10) verfahrbar ausgebildet und mit Mess-(12, 13, 14) und Auswerteeinheiten und diese mit einem Rechner (15) zur Datenaufnahme, -auswertung und -darstellung verbunden sind, wobei der Schwingquarz (1) mit einer Messeinheit (13) für die Bestimmung der Schwingquarzfrequenz (f Q ) und die planare Langmuir-Sonde (14) mit einer Messeinheit für die Messung ihrer Strom-Spannungs-Kennlinie (I L (U)) und der pyrometrische Sensor (4) mit einem Messverstärker (12) verbunden ist, und der Rechner (15) mittels eines Messprogramms aus diesen Messgrößen die Abscheide - bzw. Ätzrate (R(t)), die Plasmadichte (n e bzw. n i ), die Elektronentemperatur (T e ) und den totalen Energieeintrag (E ein ) der Plasmaprozesse ermittelt.

89. 发明公开

EP2717292A1 MASS SPECTROMETRY DEVICE 有权转让
标题翻译： MASSENSPEKTROMETRIEVORRICHTUNG
公开(公告)号：EP2717292A1
公开(公告)日：2014-04-09
申请号：EP12791957.9
申请日：2012-04-09
申请人： Hitachi High-Technologies Corporation
发明人： SAMPEI, Makoto
IPC分类号： H01J49/06 , G01N27/62 , H01J49/10 , H01J49/42
CPC分类号： H01J49/02 , G01N27/624 , H01J37/32862 , H01J37/32917 , H01J37/32935 , H01J37/32981 , H01J37/3299 , H01J49/067
摘要： When a specimen from a specimen ionizing unit (ion source) is introduced, the specimen, if not sufficiently ionized, is caused to remain in sites other than a pore in an introducing section and then deposited as a product such as an oxide or carbide by an energy such as heat. The deposited deposit causes a deterioration in the performance of the mass spectrometry device. The present invention has a specimen supply source, a specimen ionizing section for ionizing a specimen supplied from the specimen supply source, a specimen-introduction regulating chamber into which ions of the ionized specimen are introduced, a differential evacuation chamber located at the downstream side of the specimen-introduction regulating chamber, and an analyzing section located at the downstream side of the differential evacuation chamber, in which a discharge generating means is formed for generating an electric discharge inside at least one of the specimen-introduction regulating chamber and the differential evacuation chamber. The discharge generating means has a specimen introducing section electrode and a first-pore-section-forming member (electrode) located oppositely to each other inside the specimen-introduction regulating chamber, or a first-pore-section-forming member (electrode) and a second-pore-section-forming member (electrode) located oppositely to each other inside the differential evacuation chamber.
摘要翻译：当引入来自试样离子化单元（离子源）的样品时，如果不充分离子化，则将样品保留在导入部中除了孔以外的位置，然后通过以下方式沉积作为产物如氧化物或碳化物一种能量如热量。沉积的沉积物导致质谱装置的性能的劣化。本发明提供了一种试样供给源，用于离子化从试样供给源供给的试样的试样离子化部，导入离子化试样的离子的试样导入调节室，位于下游侧的差动抽空室试样引入调节室和位于差动排空室的下游侧的分析部，其中形成有用于在至少一个试样导入调节室和差动抽出中产生放电的排出产生装置室。放电产生装置具有在试样引入调节室内的相对定位的试样导入部电极和第一孔部形成部件（电极），或第一孔部形成部件（电极）和位于差动抽空室内的彼此相对设置的第二孔部形成部件（电极）。

90. 发明公开

EP2237309A3 Apparatus for chemically etching a workpiece 有权
标题翻译：一种用于化学蚀刻的工件设备
公开(公告)号：EP2237309A3
公开(公告)日：2011-08-03
申请号：EP10154656.2
申请日：2010-02-25
申请人： SPP Process Technology Systems UK Limited
发明人： Ansell, Oliver , Barrass, Anthony , Bennett, Paul , Tossell, David
IPC分类号： H01L21/00
CPC分类号： H01L21/67253 , H01J37/32917 , H01J37/32935 , H01J37/32963 , H01J37/32972 , H01J37/32981 , H01J37/3299
摘要： Apparatus for chemically etching a Workpiece includes a chamber for receiving a process gas and having a pumping port for extracting exhaust gases, and a Workpiece support located in the chamber upstream of the pumping port. The chamber further includes a sub-chamber located upstream of the pumping port and downstream of the Workpiece support, and the sub-chamber includes a window and an excitation source, adjacent the window, for creating a plasma in a sample of the exhaust gases to create an optical emission which can be monitored through the window.

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