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81. 发明授权

US09570540B2 Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same 有权
标题翻译：氮化物晶体，氮化物晶体衬底，含外延层的氮化物晶体衬底，半导体器件及其制造方法
公开(公告)号：US09570540B2
公开(公告)日：2017-02-14
申请号：US14455781
申请日：2014-08-08
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Keiji Ishibashi , Tokiko Kaji , Seiji Nakahata , Takayuki Nishiura
IPC分类号： C30B25/14 , H01L29/04 , C30B29/40 , C30B33/00 , H01L29/20 , C30B29/38
CPC分类号： G01N23/207 , C30B25/186 , C30B25/20 , C30B29/38 , C30B29/403 , C30B29/406 , C30B33/00 , C30B33/10 , G01B15/08 , G01N2223/602 , G01N2223/634 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L22/12 , H01L29/04 , H01L29/045 , H01L29/2003 , Y10T428/2978
摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1−d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 μm and the plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.
摘要翻译：氮化物晶体的特征在于，结合由X射线衍射测量得到的氮化物晶体的任意特定平行晶格面的平面间隔，与X射线的X射线满足特定平行晶格面的衍射条件，在由X射线穿透深度为0.3μm的平面间距d1获得的由| d1-d2 | / d2值表示的晶体的表面层处的均匀畸变并且在X射线穿透深度为5μm的平面间距d2等于或低于2.1×10-3。上述结构提供了具有晶体表面层的氮化物晶体，其直接可靠地评估而不破坏晶体，使得其可以以优选的方式用作半导体器件的衬底以及氮化物晶体衬底，含氮化物晶体基板，半导体装置及其制造方法。

82. 发明授权

US09236219B2 Measurement of line-edge-roughness and line-width-roughness on pre-layered structures 有权
标题翻译：预分层结构上线边粗糙度和线宽粗糙度的测量
公开(公告)号：US09236219B2
公开(公告)日：2016-01-12
申请号：US13886631
申请日：2013-05-03
申请人： Macronix International Co., Ltd.
发明人： Yu-Chung Chen , Shin-Chang Tsai , Ta-Hung Yang
IPC分类号： H01J37/26
CPC分类号： H01J37/26 , G01B15/08 , G01B2210/56 , H01J37/28 , H01J2237/2814 , H01J2237/2817 , H01L22/12
摘要： Measurements of line roughness are separated into groups depending upon pre-layers. Image data collected from similar pre-layer types are considered together in order to separate effects of line roughness from distortion of measurements caused by the pre-layers. The resulting line roughness measurements are used to estimate an aspect of line quality.
摘要翻译：线粗糙度的测量根据预层分为几组。从相似的预先图层类型收集的图像数据被一起考虑，以便分离线粗糙度与由预层引起的测量失真的影响。所得线粗糙度测量用于估计线质量的一个方面。

83. 发明申请

US20140349112A1 NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NITRIDE CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：氮化物晶体，氮化物晶体衬底，含氮化物晶体衬底，半导体器件及其制造方法
公开(公告)号：US20140349112A1
公开(公告)日：2014-11-27
申请号：US14455781
申请日：2014-08-08
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Keiji ISHIBASHI , Tokiko KAJI , Seiji NAKAHATA , Takayuki NISHIURA
IPC分类号： H01L29/04 , H01L29/20 , C30B29/38
CPC分类号： G01N23/207 , C30B25/186 , C30B25/20 , C30B29/38 , C30B29/403 , C30B29/406 , C30B33/00 , C30B33/10 , G01B15/08 , G01N2223/602 , G01N2223/634 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L22/12 , H01L29/04 , H01L29/045 , H01L29/2003 , Y10T428/2978
摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1−d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 μm and the plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.
摘要翻译：氮化物晶体的特征在于，结合由X射线衍射测量得到的氮化物晶体的任意特定平行晶格面的平面间隔，与X射线的X射线满足特定平行晶格面的衍射条件，在由X射线穿透深度为0.3μm的平面间距d1获得的由| d1-d2 | / d2值表示的晶体的表面层处的均匀畸变并且在X射线穿透深度为5μm的平面间距d2等于或低于2.1×10-3。上述结构提供了具有晶体表面层的氮化物晶体，其直接可靠地评估而不破坏晶体，使得其可以以优选的方式用作半导体器件的衬底以及氮化物晶体衬底，含氮化物晶体基板，半导体装置及其制造方法。

84. 发明申请

US20140219545A1 SEMICONDUCTOR INSPECTION SYSTEM 有权
标题翻译：半导体检测系统
公开(公告)号：US20140219545A1
公开(公告)日：2014-08-07
申请号：US14234977
申请日：2012-07-20
申请人： Akiyuki Sugiyama , Yuichi Abe
发明人： Akiyuki Sugiyama , Yuichi Abe
IPC分类号： G06T7/00
CPC分类号： G06T7/001 , G01B15/08 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： When the lengths of FEM wafers are automatically measured, not only the sizes of targets, the lengths of which are to be measured, are often varied from those in registration, but also the patterns of the targets are often deformed. Therefore, it is difficult to automatically determine whether the length measurement is possible or not. Therefore, the following are executed with a semiconductor inspection system: (1) a process of identifying the position of the contour line of an inspected image using a distance image calculated from a reference image, (2) a process of calculating a defect size image based on the position of the contour line with respect to the identified distance image, and detecting a defect candidate from the defect size image, and (3-1) a process of, upon detection of the defect candidate, calculating the size of the detected defect candidate, or (3-2) a process of detecting a portion different between the first and second contour lines as the defect candidate.
摘要翻译：当自动测量有限元晶片的长度时，不仅要测量其长度的目标的尺寸通常与注册的尺寸不同，而且目标的图案也经常变形。因此，难以自动确定长度测量是否可行。因此，使用半导体检查系统执行以下操作：（1）使用从参考图像计算的距离图像来识别被检查图像的轮廓线的位置的处理，（2）计算缺陷尺寸图像的处理基于所述轮廓线相对于所识别的距离图像的位置，以及从所述缺陷尺寸图像检测缺陷候选，以及（3-1）在检测到所述缺陷候选时，计算所检测到的所述缺陷候选的大小的处理缺陷候选者，或（3-2）检测第一和第二轮廓线之间的部分的缺陷候选的处理。

85. 发明申请

US20110241924A1 PROJECTION DETECTING APPARATUS AND PROJECTION DETECTING METHOD 有权
标题翻译：投影检测装置和投影检测方法
公开(公告)号：US20110241924A1
公开(公告)日：2011-10-06
申请号：US13126061
申请日：2010-09-15
申请人： Masahiro Yamamoto , Mitsutoshi Kenmochi , Toshihiro Sasaki
发明人： Masahiro Yamamoto , Mitsutoshi Kenmochi , Toshihiro Sasaki
IPC分类号： G01B15/08 , G01N22/02
CPC分类号： G01B15/08 , G01S13/04
摘要： A projection detecting apparatus according to the present invention is that for detecting a projection on a surface of a running metal object, and includes a transmission antenna for radiating electromagnetic waves; a reception antenna for receiving reflected electromagnetic waves; and a transmission and reception signal processing section for processing a transmission signal and a reception signal. The transmission antenna and the reception antenna have unidirectionality and the transmission antenna and the reception antenna are installed in such a way that the reception antenna does not catch electromagnetic waves which have been radiated by the transmission antenna and reflected on the surface of the metal object and the reception antenna catches electromagnetic waves alone which have been radiated by the transmission antenna and reflected on the projection.
摘要翻译：根据本发明的投影检测装置是用于检测行进的金属物体的表面上的突起，并且包括用于辐射电磁波的发射天线; 用于接收反射电磁波的接收天线; 以及发送和接收信号处理部分，用于处理发送信号和接收信号。发送天线和接收天线具有单方向性，发送天线和接收天线的安装方式使得接收天线不会捕获被发送天线辐射并在金属物体的表面上反射的电磁波，接收天线捕获由发射天线辐射并在投影上反射的单独的电磁波。

86. 发明申请

US20080272392A1 Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same 有权
标题翻译：氮化物晶体，氮化物晶体衬底，含外延层的氮化物晶体衬底，半导体器件及其制造方法
公开(公告)号：US20080272392A1
公开(公告)日：2008-11-06
申请号：US12216236
申请日：2008-07-01
申请人： Keiji Ishibashi , Tokiko Kaji , Seiji Nakahata , Takayuki Nishiura
发明人： Keiji Ishibashi , Tokiko Kaji , Seiji Nakahata , Takayuki Nishiura
IPC分类号： H01L33/00 , C01B21/00
CPC分类号： G01N23/207 , C30B25/186 , C30B25/20 , C30B29/38 , C30B29/403 , C30B29/406 , C30B33/00 , C30B33/10 , G01B15/08 , G01N2223/602 , G01N2223/634 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L22/12 , H01L29/04 , H01L29/045 , H01L29/2003 , Y10T428/2978
摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1−d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 μm and the plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.
摘要翻译：氮化物晶体的特征在于，结合由X射线衍射测量得到的氮化物晶体的任意特定平行晶格面的平面间隔，与X射线的X射线满足特定平行晶格面的衍射条件，在由d 1的值表示的晶体的表面层上的均匀的畸变-d 2/2 在0.3μm的X射线穿透深度处从平面间隔d 1> 1获得的平面间隔d <2>和在X射线处的平面间隔d 2 <2> 5μm的穿透深度等于或低于2.1×10 -3 -3。上述结构提供了具有晶体表面层的氮化物晶体，其直接可靠地评估而不破坏晶体，使得其可以以优选的方式用作半导体器件的衬底以及氮化物晶体衬底，含氮化物晶体基板，半导体装置及其制造方法。

87. 发明申请

US20050090999A1 Method of determining the irregularities of a hole 有权
标题翻译：确定孔的不规则性的方法
公开(公告)号：US20050090999A1
公开(公告)日：2005-04-28
申请号：US10954254
申请日：2004-09-29
申请人： Hyo-Cheon Kang
发明人： Hyo-Cheon Kang
IPC分类号： H01L21/66 , G01B15/08 , G01B7/00
CPC分类号： G01B15/08
摘要： In a method of calculating irregularities of a hole, a center coordinate of an actual hole is set. Inner wall coordinates of the actual hole are obtained from the center coordinate of the actual hole. An area of the actual hole is determined based on the inner wall coordinates of the actual hole. A radius of a virtual hole is determined based on the area of the actual hole. A center coordinate of the virtual hole is determined based on the inner wall coordinates of the actual hole to obtain a circumference line of the virtual hole. A standard deviation of the inner wall coordinates of the actual hole relative to the circumference line of the virtual hole is calculated, thereby obtaining the irregularities of the actual hole.
摘要翻译：在计算孔的凹凸的方法中，设定实际孔的中心坐标。实际孔的内壁坐标是从实际孔的中心坐标得到的。基于实际孔的内壁坐标确定实际孔的面积。基于实际孔的面积确定虚拟孔的半径。基于实际孔的内壁坐标来确定虚拟孔的中心坐标，以获得虚拟孔的圆周线。计算出实际孔相对于虚拟孔的圆周线的内壁坐标的标准偏差，从而获得实际孔的凹凸。

88. 发明申请

US20040195507A1 Pattern inspection method 失效
标题翻译：图案检验方法
公开(公告)号：US20040195507A1
公开(公告)日：2004-10-07
申请号：US10752527
申请日：2004-01-08
发明人： Atsuko Yamaguchi , Hiroshi Fukuda , Ryuta Tsuchiya , Hiroki Kawada , Shozo Yoneda
IPC分类号： G01N023/00
CPC分类号： G01B15/04 , G01B15/08
摘要： The present invention may include a pattern inspection method of extracting a pattern edge shape from an image obtained by a scanning microscope and inspecting the pattern. A control section and a computer of the scanning microscope process the intensity distribution of reflected electrons or secondary electrons, find the distribution of gate lengths in a single gate from data about edge positions, estimate the transistor performance by assuming a finally fabricated transistor to be a parallel connection of a plurality of transistors having various gate lengths, and determine the pattern quality and grade based on an estimated result. In this manner, it is possible to highly, accurately and quickly estimate an effect of edge roughness on the device performance and highly accurately and efficiently inspect patterns in accordance with device specifications.
摘要翻译：本发明可以包括从由扫描显微镜获得的图像中提取图案边缘形状并检查图案的图案检查方法。扫描显微镜的控制部分和计算机处理反射电子或二次电子的强度分布，从关于边缘位置的数据中找到单个栅极中栅极长度的分布，通过假设最终制造的晶体管为具有各种栅极长度的多个晶体管的并联连接，并且基于估计结果确定图案质量和等级。以这种方式，可以高度，准确和快速地估计边缘粗糙度对器件性能的影响，并且根据器件规格高精度和有效地检查图案。

89. 发明授权

US5460034A Method for measuring and analyzing surface roughness on semiconductor laser etched facets 失效
标题翻译：测量和分析半导体激光刻蚀面上表面粗糙度的方法
公开(公告)号：US5460034A
公开(公告)日：1995-10-24
申请号：US917546
申请日：1992-07-21
申请人： Robert W. Herrick
发明人： Robert W. Herrick
IPC分类号： G01B15/08 , G01Q80/00 , H01J37/22 , G01N27/00 , H01J37/26
CPC分类号： H01J37/222 , B82Y10/00 , G01B15/08 , H01J2237/223 , H01J2237/24578
摘要： A scanning electron microscope is used to scan the etched facet edge to produce digital data representative of its profile. A Fourier transform of the edge profile is produced and the resulting plurality of spatial frequency components can be used to generate a first low frequency waveform component indicative of lack of precise edge definition, a midrange frequency component indicative of poor liftoff samples, and a high frequency component indicative of metal grain size. A tilt adjustment feature of the electron microscope is optionally used to advantageously magnify the shape of the profile in the y direction.
摘要翻译：扫描电子显微镜用于扫描蚀刻的刻面边缘以产生代表其轮廓的数字数据。产生边缘轮廓的傅里叶变换，并且所得到的多个空间频率分量可用于产生指示缺少精确边缘定义的第一低频波形分量，指示不良提升样本的中频频率分量，以及高频表示金属粒度的组分。任选地使用电子显微镜的倾斜调节特征来有利地沿y方向放大轮廓的形状。

90. 发明授权

US3876879A Method and apparatus for determining surface characteristics incorporating a scanning electron microscope 失效
标题翻译：用于确定扫描电子显微镜的表面特性的方法和装置
公开(公告)号：US3876879A
公开(公告)日：1975-04-08
申请号：US41456873
申请日：1973-11-09
申请人： CALSPAN CORP
发明人： MCADAMS HIRAMIE T , GASIECKI EDWARD A
IPC分类号： G01B15/00 , G01B15/04 , G01B15/08 , G01N23/225 , H01J37/28 , H01J37/26 , G01N23/04
CPC分类号： G01N23/225 , G01B15/04 , G01B15/08 , H01J37/28
摘要： Method and apparatus for determining surface characteristics such as elevations of points on a surface wherein; an electron beam scans the surface causing electrons to be emitted from the surface; an electron sensitive detector develops signals in response to the emitted electrons impinging thereupon; a shield is located above the surface for blocking electrons emitted from an area of the surface from reaching the detector, the boundary of the area comprising a line that is a function of the elevation or contour of points on the surface, which line is sensed by the detector as a locus of points on the surface wherein the output of the detector abruptly changes in value.

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