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    • 81. 发明申请
    • METHOD FOR PRODUCING A SEMICONDUCTOR ELEMENT OF A DIRECT-CONVERTING X-RAY DETECTOR
    • 用于生产直接转换X射线探测器的半导体元件的方法
    • US20140054734A1
    • 2014-02-27
    • US13973038
    • 2013-08-22
    • SIEMENS AKTIENGESELLSCHAFT
    • Fabrice DIERREPeter HACKENSCHMIEDMatthias STRASSBURG
    • H01L31/18H01L31/0296
    • H01L31/1828C23C18/1605C23C18/1648C23C18/1651H01L31/0224H01L31/0296H01L31/115
    • A production method of a semiconductor element of a direct-converting x-ray detector is disclosed, wherein at least one intermediate layer is applied to a semiconductor layer and at least one contact layer is applied to an exposed intermediate layer by chemically currentless deposition of a contact material from a solution in each instance. The materials for the individual layers are selected such that the electrochemical potential of the materials of the at least one intermediate layer is greater than the electrochemical potential of at least one element of the semiconductor layer and the electrochemical potential of the contact material of the contract layer is greater than the electrochemical potential of the materials of the intermediate layers. Semiconductor elements produced in accordance with the method, an x-ray detector with semiconductor elements, an x-ray system with an x-ray detector and also a CT system with an x-ray detector are also disclosed.
    • 公开了直接转换X射线检测器的半导体元件的制造方法,其中至少一个中间层被施加到半导体层,并且至少一个接触层通过化学电流沉积施加到暴露的中间层 在每种情况下从解决方案中联系材料。 选择各层的材料,使得至少一个中间层的材料的电化学电位大于半导体层的至少一个元素的电化学电势和合金层的接触材料的电化学势 大于中间层材料的电化学势。 还公开了根据该方法制造的半导体元件,具有半导体元件的x射线检测器,具有x射线检测器的x射线系统以及具有x射线检测器的CT系统。
    • 87. 发明申请
    • Electrode forming method
    • 电极成型方法
    • US20060225994A1
    • 2006-10-12
    • US10525202
    • 2003-08-25
    • Kazuo OnishiShingo Sewa
    • Kazuo OnishiShingo Sewa
    • H01H57/00B05D5/12
    • C23C18/1648C23C18/1658C23C18/166C23C18/31C23C26/02Y10T156/10
    • The present invention provides an electrode forming method in which an electrode layer is formed on a solid electrolyte, capable of obtaining an electrode layer having a large electrode surface area, decreasing the number of steps required in formation of the electrode layer and reducing a human labor and time. The electrode forming method of the invention is an electrode forming method, in which a metal salt solution and a reducing agent solution are disposed on respective both sides of a solid electrolyte form and the metal salt solution is caused to pass through the solid electrolyte form by osmosis to thereby deposit a metal near the interface on the reducing agent solution side of the solid electrolyte form to thereby form the electrode on the solid electrolyte form.
    • 本发明提供一种电极形成方法,其中电极层形成在固体电解质上,能够获得具有大的电极表面积的电极层,减少形成电极层所需的步骤数量并减少人力 和时间。 本发明的电极形成方法是电极形成方法,其中金属盐溶液和还原剂溶液设置在固体电解质形式的两侧,并且使金属盐溶液通过固体电解质形式通过 从而在固体电解质形式的还原剂溶液侧的界面附近沉积金属,从而在固体电解质形式上形成电极。