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    • 87. 发明授权
    • Process for drilling chamfered holes
    • 倒角孔钻孔工艺
    • US4818834A
    • 1989-04-04
    • US171040
    • 1988-03-21
    • Gary F. Rupert
    • Gary F. Rupert
    • B23H5/00B23H9/14B23K26/38B23K26/40B23H1/00B23H5/02B23K26/00
    • B23H9/14B23H5/00B23K26/386B23K26/40B23K2201/35B23K2203/52
    • A process for drilling chamfered holes includes the steps of directing noncontact energy onto the outer surface of the part to form a recessed crater-like entrance with chamfered walls and thereafter directing a small diameter wire electrode adjacent the substrate and spark eroding the base without removing material from the chamfered walls so as to produce a combined passage through the part with a chamfered entrance leading to a smaller outlet. In one embodiment the part has a ceramic coating which is initially removed from the part by either focusing a laser beam to a penetration depth which removes the ceramic coating while forming the entrance and in another embodiment the coating is initially removed by imposing a high voltage pulse thereagainst from a spark erosion electrode of electrical discharge machining equipment.
    • 用于钻削倒角孔的方法包括以下步骤:将非接触能量引导到部件的外表面上,以形成具有倒角壁的凹陷的凹坑状入口,然后将小直径线电极引导到邻近基板并且使基体火花侵蚀而不去除材料 从倒角的墙壁上产生通过该零件的组合通道,其具有通向较小出口的倒角入口。 在一个实施例中,部件具有陶瓷涂层,其通过将激光束聚焦到穿透深度而最初从部件去除,该穿透深度在形成入口的同时移除陶瓷涂层,并且在另一实施例中,涂层最初通过施加高电压脉冲而被去除 放电放电加工设备的火花腐蚀电极。