会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 82. 发明申请
    • Enhanced PFC waste-gas treating system
    • 增强型PFC废气处理系统
    • US20060013745A1
    • 2006-01-19
    • US10892184
    • 2004-07-16
    • Yi-Rong Chen
    • Yi-Rong Chen
    • B01D53/34B01D50/00
    • B01D53/8659B01D53/8662B01D2257/2027B01D2257/2047B01D2257/2066Y02C20/30
    • The waste-gas treating system is designed for treating the waste gas created in general semiconductor processing in production; the waste-gas treating system mainly is provided at one side of a waste-gas treating equipment, and contains therein mainly a condensing tube, a catalyst treating unit, a water treating unit and water collecting tanks; the catalyst treating unit decomposes toxic gases such as per-fluorine compound (PFC) etc. that are remained in the waste-gas treating equipment and are unable to be dealt with to thereby form non-toxic gases, and does water treating on the byproduct from dissociation, thus a function of lowering temperature can be acquired, then the gases are exhausted to the atmosphere to perform secondarily treating to reduce the content of PFC in the atmosphere and to reduce damage of the hothouse effect.
    • 废气处理系统设计用于处理生产中通常的半导体加工产生的废气; 废气处理系统主要设置在废气处理设备的一侧,主要包括冷凝管,催化剂处理单元,水处理单元和集水箱; 催化剂处理单元分解残留在废气处理设备中的无氟化合物(PFC)等有毒气体,不能处理,从而形成无毒气体,并对副产物进行水处理 从解离出来,可以获得降低温度的功能,然后将气体排放到大气中进行二次处理以降低大气中PFC的含量并减少温室效应的损害。
    • 83. 发明授权
    • Process for treating gas containing fluorine-containing compounds and CO
    • 含氟化合物和CO的气体处理方法
    • US06764666B2
    • 2004-07-20
    • US10060224
    • 2002-02-01
    • Yoichi Mori
    • Yoichi Mori
    • B01J2104
    • B01D53/8659B01D53/86B01D53/864B01D2251/00B01D2251/102B01D2257/2027B01D2257/502
    • The purpose of the present invention is to provide a process and an apparatus for efficiently treating a gas containing fluorine-containing compounds and CO to be discharged, for example, from the step of dry cleaning the inner surfaces and the like of a semiconductor manufacturing apparatus or the step of etching various types of formed films such as oxide films in the semiconductor industry. In order to accomplish the above-mentioned purpose, the gas treating process according to the present invention is a process for treating a gas containing fluorine-containing compounds and CO which comprises contacting the above described gas with O2 and H2O at a temperature of 850° C. or higher to oxidize the CO to CO2; and then contacting the gas with &ggr;-alumina at a temperature of 600 to 900° C. to decompose the fluorine-containing compounds.
    • 本发明的目的是提供一种用于有效处理含氟化合物和待排出的CO的气体的方法和装置,例如,从干燥半导体制造装置的内表面等的步骤 或在半导体工业中蚀刻各种类型的成膜(例如氧化物膜)的步骤。 为了实现上述目的,根据本发明的气体处理方法是一种处理含有氟化合物和CO的气体的方法,该方法包括使上述气体与O 2和H 2 O在850℃的温度下接触 C以上以将CO氧化成CO 2; 然后使气体与γ-氧化铝在600〜900℃的温度下接触,分解含氟化合物。
    • 85. 发明申请
    • Method for processing perfluorocarbon, and apparatus therefor
    • 全氟化碳加工方法及其设备
    • US20030049190A1
    • 2003-03-13
    • US10244010
    • 2002-09-16
    • Kazuyoshi IrieToshihiro MoriHisao YokoyamaTakayuki TomiyamaToshihide TakanoShin TamataShuichi Kanno
    • B01D053/70
    • B01D53/8659B01D53/8662Y02C20/30
    • An exhaust gas containing a perfluoride compound (PFC) and SiF4 is conducted into a silicon remover and brought into contact with water. A reaction water supplied from a water supplying piping and air supplied from an air supplying piping are mixed with the exhaust gas exhausted from the silicon remover. The exhaust gas containing water, air, and CF4 is heated at 700null C. by a heater. The exhaust gas containing PFC is conducted to a catalyst layer filled with an alumina group catalyst. The PFC is decomposed to HF and CO2 by the catalyst. The exhaust gas containing HF and CO2 at a high temperature exhausted from the catalyst layer is cooled in a cooling apparatus. Subsequently, the exhaust gas is conducted to an acidic gas removing apparatus to remove HF. In this way, the silicon component is removed from the exhaust gas before introducing the exhaust gas into the catalyst layer. Therefore, the surface of the catalyst can be utilized effectively, and the decomposition reaction of the perfluoride compound can be improved.
    • 将含有全氟化合物(PFC)和SiF 4的废气导入硅去除剂中并与水接触。 从供水管道供应的反应水和从供气管道供应的空气与从硅去除器排出的废气混合。 含有水,空气和CF4的废气通过加热器在700℃加热。 含有PFC的废气被传导到填充有氧化铝基催化剂的催化剂层。 PFC通过催化剂分解成HF和CO2。 在从催化剂层排出的高温下含有HF和CO 2的废气在冷却装置中被冷却。 随后,将废气导入酸性气体去除装置中去除HF。 以这种方式,在将废气引入催化剂层之前,从排气中除去硅组分。 因此,可有效利用催化剂的表面,可以提高全氟化合物的分解反应。
    • 87. 发明授权
    • Process for cleaning harmful gas
    • 清洁有害气体的过程
    • US5756060A
    • 1998-05-26
    • US740855
    • 1996-11-04
    • Kenji OtsukaSatoshi ArakawaYouji Nawa
    • Kenji OtsukaSatoshi ArakawaYouji Nawa
    • B01D53/34B01D53/68B01D53/86
    • B01D53/68B01D53/8659
    • A process for cleaning a harmful gas which comprises bringing a harmful gas containing a halogen gas and/or a halogen compound gas such as hydrogen fluoride, hydrogen chloride, tungsten hexafluoride, silicon tetrafluoride and boron trifluoride into contact with a cleaning agent comprising metal oxides composed principally of copper (II) oxide and manganese (IV) oxide that are spreadingly and adhesively incorporated with sodium formate so as to remove a harmful component from the harmful gas. According to the cleaning process of the present invention, it is possible to remove harmful components from the harmful gas in extremely high efficiency at ordinary temperature, dispensing with heating or cooling irrespective of the concentration of the harmful components. The cleaning capacity of the cleaning agent is favorably maintained without deterioration even when the harmful gas is in a dry state. Furthermore, the cleaning agent can remove the harmful gas in safety without a fear of causing fire or elimination of the harmful component therefrom. The cleaning process is highly useful and significant in that it is well suited for cleaning exhaust gases from a semiconductor manufacturing process as well as an emergency countermeasure against the leakage of harmful gas from a gas cylinder.
    • 一种清洁有害气体的方法,包括使含有卤素气体和/或卤素化合物气体如氟化氢,氯化氢,六氟化钨,四氟化硅和三氟化硼的有害气体与包含金属氧化物的清洗剂接触 主要是氧化铜(II)和氧化锰(IV),它们与甲酸钠扩散并粘合并入,以便从有害气体中除去有害成分。 根据本发明的清洗方法,可以在常温下以非常高的效率从有害气体中除去有害成分,而不管有害成分的浓度如何,分配加热或冷却。 即使当有害气体处于干燥状态时,清洁剂的清洁能力也被有利地保持而不劣化。 此外,清洁剂可以安全地除去有害气体,而不用担心引起火灾或从中消除有害成分。 清洁过程是非常有用和重要的,因为它非常适合于清洁半导体制造过程中的废气以及应对措施,防止来自气瓶的有害气体的泄漏。