专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明授权

US07485611B2 Supercritical fluid-based cleaning compositions and methods 失效
标题翻译：超临界流体清洗组合物和方法
公开(公告)号：US07485611B2
公开(公告)日：2009-02-03
申请号：US10249763
申请日：2003-05-06
申请人： Jeffrey F. Roeder , Thomas H. Baum , Matthew Healy , Chongying Xu
发明人： Jeffrey F. Roeder , Thomas H. Baum , Matthew Healy , Chongying Xu
IPC分类号： H01L21/302
CPC分类号： C11D3/28 , C11D1/004 , C11D3/02 , C11D3/164 , C11D3/187 , C11D3/2072 , C11D3/2093 , C11D3/245 , C11D3/43 , C11D7/02 , C11D7/247 , C11D7/261 , C11D7/264 , C11D7/266 , C11D7/28 , C11D7/3281 , C11D7/50 , C11D11/0047 , G03F7/422 , G03F7/427 , H01L2224/16225
摘要： Compositions and methods employing supercritical fluids, e.g., supercritical carbon dioxide, for removal of unwanted material from microelectronic device structures and process equipment. One composition of such type, having utility for removing flux and solder perform surface films, includes supercritical fluid, e.g., supercritical CO2, and organic co-solvent, e.g., xylene. Another composition of such type having utility for removal of metals, metal oxides, metal-containing post-etch residues and CMP particles from semiconductor substrates includes supercritical fluid and at least one β-diketone.
摘要翻译：使用超临界流体（例如超临界二氧化碳）从微电子器件结构和工艺设备中除去不想要的材料的组合物和方法。这种类型的一种组合物，具有用于去除焊剂和焊料进行表面膜的实用性，包括超临界流体，例如超临界CO 2和有机共溶剂，例如二甲苯。具有用于从半导体衬底去除金属，金属氧化物，含金属的蚀刻后残余物和CMP颗粒的这种类型的另一种组合物包括超临界流体和至少一种β-二酮。

82. 发明申请

US20080233276A1 COPPER (I) COMPOUNDS USEFUL AS DEPOSITION PRECURSORS OF COPPER THIN FILMS 有权
标题翻译： COPPER（I）化合物作为铜薄膜沉积前体有用
公开(公告)号：US20080233276A1
公开(公告)日：2008-09-25
申请号：US12119362
申请日：2008-05-12
申请人： Chongying Xu , Alexander Borovik , Thomas H. Baum
发明人： Chongying Xu , Alexander Borovik , Thomas H. Baum
IPC分类号： C23C16/06 , C09D5/00
CPC分类号： C07C257/14 , C07F1/005 , C23C16/18
摘要： Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes.
摘要翻译：用于在制造半导体器件中形成铜薄膜的铜（I）脒前体，以及使用化学气相沉积或原子层沉积工艺在基片上沉积铜（I）脒前体的方法。

83. 发明授权

US07294528B2 Supercritical fluid-assisted deposition of materials on semiconductor substrates 有权
标题翻译：材料在半导体衬底上的超临界流体辅助沉积
公开(公告)号：US07294528B2
公开(公告)日：2007-11-13
申请号：US11078211
申请日：2005-03-11
申请人： Chongying Xu , Thomas H. Baum
发明人： Chongying Xu , Thomas H. Baum
IPC分类号： H01L51/40
CPC分类号： C23C18/1204 , C23C18/122 , C23C18/125 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/288 , H01L21/3122 , H01L21/31695 , H01L21/76841 , H01L21/76877
摘要： Supercritical fluid-assisted deposition of materials on substrates, such as semiconductor substrates for integrated circuit device manufacture. The deposition is effected using a supercritical fluid-based composition containing the precursor(s) of the material to be deposited on the substrate surface. Such approach permits use of precursors that otherwise would be wholly unsuitable for deposition applications, as lacking requisite volatility and transport characteristics for vapor phase deposition processes.
摘要翻译：材料在衬底上的超临界流体辅助沉积，例如用于集成电路器件制造的半导体衬底。使用含有待沉积在基材表面上的材料的前体的超临界流体基组合物进行沉积。这种方法允许使用否则将完全不适合于沉积应用的前体，因为对于气相沉积工艺缺乏必要的挥发性和传输特性。

84. 发明授权

US07285308B2 Chemical vapor deposition of high conductivity, adherent thin films of ruthenium 有权
标题翻译：化学气相沉积的高导电性，粘附的钌薄膜
公开(公告)号：US07285308B2
公开(公告)日：2007-10-23
申请号：US10803750
申请日：2004-03-18
申请人： Bryan C. Hendrix , James J. Welch , Steven M. Bilodeau , Jeffrey F. Roeder , Chongying Xu , Thomas H. Baum
发明人： Bryan C. Hendrix , James J. Welch , Steven M. Bilodeau , Jeffrey F. Roeder , Chongying Xu , Thomas H. Baum
IPC分类号： C23C16/00
CPC分类号： C23C16/45557 , C23C16/0272 , C23C16/16 , C23C16/18
摘要： A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.
摘要翻译：描述了一种用于沉积具有高导电性和优异的基底附着性的钌薄膜的多步法。该方法包括沉积钌成核层，随后沉积高度导电的钌上层。使用低沉积速率的化学气相沉积（CVD）沉积两层。

85. 发明授权

US07208427B2 Precursor compositions and processes for MOCVD of barrier materials in semiconductor manufacturing 有权
标题翻译：半导体制造中阻挡材料的MOCVD的前体组成和工艺
公开(公告)号：US07208427B2
公开(公告)日：2007-04-24
申请号：US10643110
申请日：2003-08-18
申请人： Jeffrey F. Roeder , Chongying Xu , Bryan C. Hendrix , Thomas H. Baum
发明人： Jeffrey F. Roeder , Chongying Xu , Bryan C. Hendrix , Thomas H. Baum
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/45553 , C07F7/10 , C07F9/005 , C07F11/005 , C23C16/34 , C23C16/345 , C23C16/45525 , H01L21/28556 , H01L21/28562 , H01L21/76801 , H01L21/76841
摘要： Metalorganic precursors of the formula: (R1R2N)a−bMXb wherein: M is the precursor metal center, selected from the group of Ta, Ti, W, Nb, Si, Al and B; a is a number equal to the valence of M; 1≦b≦(a−1); R1 and R2 can be the same as or different from one another, and are each independently selected from the group of H, C1–C4 alkyl, C3–C6 cycloalkyl, and R03Si, where each R0 can be the same or different and each R0 is independently selected from H and C1–C4 alkyl; and X is selected from the group of chlorine, fluorine, bromine and iodine. Precursors of such formula are useful for chemical vapor deposition (MOCVD) of conductive barrier materials in the manufacture of microelectronic device structures, e.g., by atomic layer chemical vapor deposition on a substrate bearing nitrogen-containing surface functionality. Further described is a method of forming Si3N4 on a substrate at low temperature, e.g., using atomic layer chemical vapor deposition (ALCVD).
摘要翻译：式中的金属有机前体：<？in-line-formula description =“In-line Formulas”end =“lead”？>（R 1 R 2 N N）其中：M是前体金属中心，其选自下列的化合物：其中：M是前体金属中心， Ta，Ti，W，Nb，Si，Al和B组; a是等于M的化合价数; 1 <= b <=（A-1）; R 1和R 2可以彼此相同或不同，并且各自独立地选自H，C 1〜 C 1 -C 4烷基，C 3 -C 6环烷基和R 0〜3个 > Si，其中每个R 0可以相同或不同，并且每个R 0独立地选自H和C 1 -C 3 > 4 烷基; X选自氯，氟，溴和碘。这种配方的前体可用于制造微电子器件结构中的导电阻挡材料的化学气相沉积（MOCVD），例如通过在含有氮的表面官能团的基底上的原子层化学气相沉积。进一步描述了在低温下，例如使用原子层化学气相沉积（ALCVD）在衬底上形成Si 3 N 4 N 4的方法。

86. 发明授权

US07022864B2 Ethyleneoxide-silane and bridged silane precursors for forming low k films 失效
标题翻译：用于形成低k膜的环氧乙烷 - 硅烷和桥联硅烷前体
公开(公告)号：US07022864B2
公开(公告)日：2006-04-04
申请号：US10619785
申请日：2003-07-15
申请人： Alexander S. Borovik , Chongying Xu , Thomas H. Baum , Steven Bilodeau , Jeffrey F. Roeder , Abigail Ebbing , Daniel Vestyck
发明人： Alexander S. Borovik , Chongying Xu , Thomas H. Baum , Steven Bilodeau , Jeffrey F. Roeder , Abigail Ebbing , Daniel Vestyck
IPC分类号： C07F7/18 , B05D5/12 , H05H1/42
CPC分类号： C23C16/401 , C07F7/0814 , C07F7/1804 , C09D4/00 , C08G77/04
摘要： An organosilicon precursor for vapor deposition, e.g., low pressure (
摘要翻译：一种用于气相沉积的有机硅前体，例如低k（高于100托）的低k高强度电介质膜的等离子体增强化学气相沉积（PECVD），其中所述前体包括以下中的至少一种：（i）侧链环氧乙烷基官能团; 和（ii）下式的二甲硅烷基部分，其中x是0至4的整数，包括端值在内。这些前体可用于形成绝缘膜的介电常数约为3以下，硬度超过1吉比帕斯卡。

87. 发明授权

US07011716B2 Compositions and methods for drying patterned wafers during manufacture of integrated circuitry products 失效
公开(公告)号：US07011716B2
公开(公告)日：2006-03-14
申请号：US10249658
申请日：2003-04-29
申请人： Chongying Xu , Michael Korzenski , Thomas H. Baum , Alexander Borovik , Eliodor G. Ghenciu
发明人： Chongying Xu , Michael Korzenski , Thomas H. Baum , Alexander Borovik , Eliodor G. Ghenciu
IPC分类号： B08B3/08 , H01L21/302 , B23G1/34
CPC分类号： H01L21/02101
摘要： Drying of patterned wafers is achieved in a manner effecting removal of water from the patterned wafers without collapse or deterioration of the pattern structures thereof. The drying is carried out in one aspect of the invention with a composition containing supercritical fluid, and at least one water-reactive agent that chemically reacts with water to form reaction product(s) more soluble in the supercritical fluid than water. Various methodologies are described for use of supercritical fluids to dry patterned wafers, which avoid the (low water solubility) deficiency of supercritical fluids such as supercritical CO2.

88. 发明授权

US07005392B2 Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same 失效
标题翻译：使用酰胺前体形成栅介质薄膜的CVD试剂组合物及其使用方法
公开(公告)号：US07005392B2
公开(公告)日：2006-02-28
申请号：US09823196
申请日：2001-03-30
申请人： Thomas H. Baum , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder
发明人： Thomas H. Baum , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder
IPC分类号： H01L21/31 , H01L31/469 , C07F5/00 , B05D5/12
CPC分类号： H01L21/28185 , C07F7/003 , C07F7/025 , C07F7/10 , C23C14/08 , C23C14/083 , C23C16/401 , C23C16/405 , H01L21/02142 , H01L21/02148 , H01L21/02164 , H01L21/02181 , H01L21/02219 , H01L21/02222 , H01L21/02271 , H01L21/28167 , H01L21/28194 , H01L21/3125 , H01L21/31604 , H01L21/3185 , H01L29/517 , H01L29/518
摘要： A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR1R2)x, wherein M is selected from the group consisting of: Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, Al; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1–C8 alkyl, C1–C8 perfluoroalkyl, alkylsilyl and x is the oxidation state on metal M; and an aminosilane compound of the formula HxSi(NR1R2)4-x, wherein H is hydrogen; x is from 0 to 3; Si is silicon; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1–C8 alkyl, and C1–C8 perfluoroalkyl. By comparison with the standard SiO2 gate dielectric materials, these gate dielectric materials provide low levels of carbon and halide impurity.
摘要翻译：一种使用式M（NR 1，R 2）2 x的金属茂化合物在基片上形成栅极电介质薄膜的CVD方法，其中M 选自Zr，Hf，Y，La，镧系元素，Ta，Ti，Al; N是氮; R 1和R 2各自相同或不同，并且独立地选自H，芳基，全氟芳基，C 1 -C 8烷基，C 1 全氟烷基，烷基甲硅烷基，x是金属M上的氧化态; 和式H x Si（NR 1，R 2）4-x N的氨基硅烷化合物，其中H 是氢; x为0〜3; 硅是硅; N是氮; R 1和R 2各自相同或不同，并且独立地选自H，芳基，全氟芳基，C 1 -C 8烷基和C 1 -C 8烷基，全氟烷基。与标准的SiO 2栅极电介质材料相比，这些栅极电介质材料提供低水平的碳和卤化物杂质。

89. 发明授权

US06736993B1 Silicon reagents and low temperature CVD method of forming silicon-containing gate dielectric materials using same 有权
标题翻译：硅试剂和使用其形成含硅栅极电介质材料的低温CVD法
公开(公告)号：US06736993B1
公开(公告)日：2004-05-18
申请号：US09551018
申请日：2000-04-18
申请人： Chongying Xu , Thomas H. Baum , Bryan C. Hendrix
发明人： Chongying Xu , Thomas H. Baum , Bryan C. Hendrix
IPC分类号： C09K300
CPC分类号： H01L21/28194 , C23C16/401 , H01L21/02164 , H01L21/02216 , H01L21/02271 , H01L21/28167 , H01L21/31612 , H01L29/51 , H01L29/517 , H01L29/518 , H01L29/66181
摘要： Silicon precursors for forming silicon films. Hexacoordinated silicon beta-diketonate compositions are described, of the formula R2Si(-diketonate)2 or (RO)2Si(&bgr;-diketonate)2, wherein each R is the same as or different from the other R, and each R is independently selected from H, aryl, fluoroaryl, C1-C12 alkyl, C1-C12 fluoroalkyl and C1-C12 silicon-containing alkyl. The precursors are compatible with dopant co-precursors such as transition metal &bgr;-diketonate coordination complexes. The compositions enable low temperature (e.g.,
摘要翻译：用于形成硅膜的硅前体。六配位硅β-二酮组合物描述为式R 2 Si（ - 二酮）2或（RO）2 Si（β-二酮酸酯）2，其中每个R与另一个R相同或不同，并且每个R独立地选择由H，芳基，氟芳基，C 1 -C 12烷基，C 1 -C 12氟代烷基和C 1 -C 12含硅烷基组成。前体与掺杂剂共前体如过渡金属β-二酮配位络合物相容。该组合物能够在VLSI微电子器件的制造中形成栅极电介质，电容器膜等的低温（例如<600℃）。

90. 发明授权

US06735978B1 Treatment of supercritical fluid utilized in semiconductor manufacturing applications 失效
标题翻译：半导体制造应用中超临界流体的处理
公开(公告)号：US06735978B1
公开(公告)日：2004-05-18
申请号：US10364558
申请日：2003-02-11
申请人： Glenn M. Tom , Michael B. Korzenski , Eliodor G. Ghenciu , Chongying Xu , Thomas H. Baum
发明人： Glenn M. Tom , Michael B. Korzenski , Eliodor G. Ghenciu , Chongying Xu , Thomas H. Baum
IPC分类号： F25D100
CPC分类号： C01B32/50 , Y02P20/544
摘要： A system and process for utilization and disposition of a supercritical fluid composition, in which a supercritical fluid (SCF) composition is used in an SCF-using process facility such as a semiconductor manufacturing plant. The supercritical fluid composition is withdrawn from the process facility containing at least one component that is extraneous with respect to the further disposition of the supercritical fluid composition. The withdrawn supercritical fluid composition is converted to a pressurized liquid, which is treated to at least partially remove the extraneous component(s) therefrom. The extraneous component(s)-depleted pressurized liquid in its further disposition can be reconverted to a supercritical state for recycle to the SCF-using process facility, or it can be gasified and discharged to the atmosphere in the case of supercritical fluids such as CO2.
摘要翻译：一种用于利用和处置超临界流体组合物的系统和方法，其中超临界流体（SCF）组合物在诸如半导体制造厂的SCF使用过程设备中使用。超临界流体组合物从处理设备中取出，其中含有至少一种相对于超临界流体组合物的进一步处置是无关的组分。将取出的超临界流体组合物转化为加压液体，其被处理以至少部分地从其中除去外来成分。在其进一步的处置中，去除加压液体的外来成分可以再转化为超临界状态，以再循环至使用SCF的工艺设备，或者在超临界流体如CO2的情况下，可将其气化并排放到大气中。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式