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81. 发明申请

US20060063898A1 Process for producing polar olefin copolymer and polar olefin copolymer obtained thereby 有权
标题翻译：制备极性烯烃共聚物和极性烯烃共聚物的方法
公开(公告)号：US20060063898A1
公开(公告)日：2006-03-23
申请号：US11253963
申请日：2005-10-20
申请人： Yoshihisa Inoue , Shigekazu Matsui , Yasuhiko Suzuki , Yasunori Yoshida , Yukihiro Takagi , Terunori Fujita , Tomoaki Matsugi , Takashi Nakano
发明人： Yoshihisa Inoue , Shigekazu Matsui , Yasuhiko Suzuki , Yasunori Yoshida , Yukihiro Takagi , Terunori Fujita , Tomoaki Matsugi , Takashi Nakano
IPC分类号： C08F4/44
CPC分类号： C08F210/02 , C08F4/619 , C08F4/639 , C08F4/659 , C08F10/00 , C08F4/54 , C08F4/64048 , C08F220/06 , C08F2500/20 , C08F2500/17 , C08F220/12 , C08F220/04 , C08F232/00 , C08F222/06 , C08F4/6812 , C08F4/6912 , C08F4/7022 , C08F4/64044 , C08F4/68112 , C08F4/69112 , C08F4/69474 , C08F4/68474 , C08F4/64189 , C08F4/64051 , C08F4/68129 , C08F4/69129 , C08F4/68293 , C08F4/64186 , C08F4/68465 , C08F4/69465 , C08F4/69103 , C08F4/68103
摘要： A process for producing a polar olefin copolymer comprises copolymerizing a non-polar olefin and a polar olefin in the presence of a transition metal compound selected from Groups 4, 5, 6 and 11 of the periodic table, which is represented by the following formula (IV): wherein M′ is a transition metal atom selected from Groups 4, 5, 6 and 11 of the periodic table, m is an integer of 1 to 6, A is —O—, —Si—, —Se—, —N(R6)—, n is a number satisfying a valence of M′, R1 to R4 and R6 are each a hydrogen atom, a halogen atom, a hydrocarbon group and the like, and X is a halogen atom, an oxygen atom, a hydrocarbon group and the like, and at least one compound (B) selected from the group consisting of an organometallic compound (B-1), an organoaluminum oxy-compound (B-2) and an ionic ionizing compound (B-3). Therefore, the process is capable of obtaining a polar olefin copolymer having excellent properties under mild polymerization conditions.
摘要翻译：一种制备极性烯烃共聚物的方法，包括在选自元素周期表第4,5,6和11族的过渡金属化合物存在下使非极性烯烃和极性烯烃共聚合，其由下式（ IV）：

82. 发明申请

US20050245213A1 Communication apparatus 失效
标题翻译：通讯设备
公开(公告)号：US20050245213A1
公开(公告)日：2005-11-03
申请号：US11074871
申请日：2005-03-09
申请人： Takayuki Hirano , Yasuhiko Suzuki
发明人： Takayuki Hirano , Yasuhiko Suzuki
IPC分类号： H03G3/20 , H03F1/06 , H03F3/21 , H03F3/24 , H03G3/30 , H03K19/00 , H04B1/02 , H04B1/04
CPC分类号： H03F3/24 , H03F1/0205 , H03F3/211 , H03F2200/78 , H03G3/3042
摘要： In a communication apparatus, effective automatic power control (APC) is realized. Transmission object signal level changing units change a level of a transmission object signal of each channel, and transmission filter units carry out filtering for a signal of each channel after its level was changed with a characteristic for allowing a passage of a frequency component of each channel, and a transmission signal coupling unit couples signals of plural channels after the filtering was carried out, and an antenna transmits a coupled signal by wireless, and coupled signal dividing units divide a part of the coupled signal into a plurality of signals, and level detection filter units carry out filtering for each divided signal with an identical characteristic to the above-described characteristic, and signal level detecting units detect a level of a signal of each channel after the filtering was carried out, and a transmission object signal level change mode controlling unit controls a level change mode of a transmission object signal of each channel on the basis of the detection result.
摘要翻译：在通信装置中，实现了有效的自动功率控制（APC）。传输对象信号电平改变单元改变每个信道的传输对象信号的电平，并且发送滤波器单元在其电平改变之后对每个信道的信号进行滤波，具有允许每个信道的频率分量通过的特性并且发送信号耦合单元在执行滤波之后耦合多个信道的信号，并且天线通过无线发送耦合信号，并且耦合信号分割单元将一部分耦合信号划分为多个信号，并且电平检测滤波器单元对与上述特性具有相同特性的每个分频信号进行滤波，并且信号电平检测单元在执行滤波之后检测每个信道的信号电平，并且传输对象信号电平改变模式控制单元基于d控制每个通道的传输对象信号的电平变化模式检查结果。

83. 发明申请

US20050175524A1 Method and apparatus for treating exhaust gas 审中-公开
标题翻译：废气处理方法及装置
公开(公告)号：US20050175524A1
公开(公告)日：2005-08-11
申请号：US10517063
申请日：2004-03-30
申请人： Yoichi Mori , Toyoji Shinohara , Yasuhiko Suzuki
发明人： Yoichi Mori , Toyoji Shinohara , Yasuhiko Suzuki
IPC分类号： B01D53/68
CPC分类号： B01D53/68 , Y02C20/30
摘要： The present invention relates to a method and apparatus for treating an exhaust gas containing a fluorine compound. A method according to the present invention includes heating the exhaust gas in the presence of O2, and then adding H2O to the exhaust gas to decompose or oxidize the fluorine compound. An apparatus according to the present invention includes a heating section (30) for heating the exhaust gas, an exhaust gas supply (11) for supplying the exhaust gas to the heating section (30), an H2O adding section (40) located just downstream of the heating section (30) for adding H2O to the exhaust gas by supplying H2O or H2 to the exhaust gas; and an acid gas removal section (13) for removing an acid gas produced by a reaction between the exhaust gas and H2O.
摘要翻译：本发明涉及一种处理含氟化合物的废气的方法和装置。根据本发明的方法包括在O 2存在下加热废气，然后向排气中加入H 2 O 2以分解或氧化氟化合物。根据本发明的装置包括：用于加热废气的加热部分（30），用于将排气供应到加热部分（30）的排气供应源（11），H 2 O添加部分（40），其位于加热部分（30）的下游，用于通过提供H 2 O或H 2 O将H 2 O 2添加到排气中到废气; 和用于除去由废气和H 2 O 2之间的反应产生的酸性气体的酸性气体去除部分（13）。

84. 发明申请

US20050098791A1 Nitride semiconductor, semiconductor device, and manufacturing methods for the same 审中-公开
公开(公告)号：US20050098791A1
公开(公告)日：2005-05-12
申请号：US11001951
申请日：2004-12-02
申请人： Osamu Goto , Takeharu Asano , Motonobu Takeya , Katsunori Yanashima , Shinro Ikeda , Katsuyoshi Shibuya , Yasuhiko Suzuki
发明人： Osamu Goto , Takeharu Asano , Motonobu Takeya , Katsunori Yanashima , Shinro Ikeda , Katsuyoshi Shibuya , Yasuhiko Suzuki
IPC分类号： H01L21/20 , H01L29/04 , H01L29/20 , H01L33/00
CPC分类号： H01L29/045 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02645 , H01L29/2003 , H01L33/007
摘要： A nitride semiconductor having a large low-defect region in a surface thereof, and a semiconductor device using the same are provided. Also, a manufacturing method for a nitride semiconductor comprising a layer formation step using a transverse growth technique where surface defects can easily be reduced, and a manufacturing method for a semiconductor device using the same are provided. On a substrate, a seed crystal part is formed in a stripe pattern with a buffer layer in between. Next, crystals are grown from the seed crystal part in two stages of growth conditions to form a nitride semiconductor layer. Low temperature growing parts with a trapezoid shaped cross section are formed at a growth temperature of 1030° C. in the first stage and a transverse growth is dominantly advanced at a growth temperature of 1070° C. to form a high temperature growing part between the low temperature growing parts in the second stage. Thereby, hillocks and conventional lattice defects are reduced in a surface of the nitride semiconductor layer which is above the low temperature growing part.

85. 发明授权

US06890785B2 Nitride semiconductor, semiconductor device, and manufacturing methods for the same 有权
标题翻译：氮化物半导体，半导体器件及其制造方法
公开(公告)号：US06890785B2
公开(公告)日：2005-05-10
申请号：US10372903
申请日：2003-02-24
申请人： Osamu Goto , Takeharu Asano , Motonobu Takeya , Katsunori Yanashima , Shinro Ikeda , Katsuyoshi Shibuya , Yasuhiko Suzuki
发明人： Osamu Goto , Takeharu Asano , Motonobu Takeya , Katsunori Yanashima , Shinro Ikeda , Katsuyoshi Shibuya , Yasuhiko Suzuki
IPC分类号： H01L21/20 , H01L29/04 , H01L29/20 , H01L33/00 , H01L21/00
CPC分类号： H01L29/045 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02645 , H01L29/2003 , H01L33/007
摘要： A nitride semiconductor having a large low-defect region in a surface thereof, and a semiconductor device using the same are provided. Also, a manufacturing method for a nitride semiconductor comprising a layer formation step using a transverse growth technique where surface defects can easily be reduced, and a manufacturing method for a semiconductor device using the same are provided. On a substrate, a seed crystal part is formed in a stripe pattern with a buffer layer in between. Next, crystals are grown from the seed crystal part in two stages of growth conditions to form a nitride semiconductor layer. Low temperature growing parts with a trapezoid shaped cross section are formed at a growth temperature of 1030° C. in the first stage and a transverse growth is dominantly advanced at a growth temperature of 1070° C. to form a high temperature growing part between the low temperature growing parts in the second stage. Thereby, hillocks and conventional lattice defects are reduced in a surface of the nitride semiconductor layer which is above the low temperature growing part.
摘要翻译：提供了其表面具有大的低缺陷区域的氮化物半导体和使用其的半导体器件。而且，提供一种氮化物半导体的制造方法，其包括使用横向生长技术的层形成步骤，其中可以容易地降低表面缺陷，并且提供了使用其的半导体器件的制造方法。在基板上，以条纹图案形成晶种部分，其间具有缓冲层。接下来，在生长条件的两个阶段从晶种部分生长晶体以形成氮化物半导体层。在第一阶段中在1030℃的生长温度下形成具有梯形横截面的低温生长部件，并且在1070℃的生长温度下横向生长主要进展，以形成高温生长部分低温生长部件在第二阶段。因此，在低温生长部分以上的氮化物半导体层的表面，减少了小丘和常规晶格缺陷。

86. 发明授权

US06829270B2 Nitride III-V compound semiconductor substrate, its manufacturing method, manufacturing method of a semiconductor light emitting device, and manufacturing method of a semiconductor device 有权
标题翻译：氮化物III-V化合物半导体衬底，其制造方法，半导体发光器件的制造方法以及半导体器件的制造方法
公开(公告)号：US06829270B2
公开(公告)日：2004-12-07
申请号：US10228181
申请日：2002-08-27
申请人： Yasuhiko Suzuki , Takeharu Asano , Motonobu Takeya , Osamu Goto , Shinro Ikeda , Katsuyoshi Shibuya
发明人： Yasuhiko Suzuki , Takeharu Asano , Motonobu Takeya , Osamu Goto , Shinro Ikeda , Katsuyoshi Shibuya
IPC分类号： H01S500
CPC分类号： C30B25/18 , C30B25/02 , C30B29/40 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02647 , H01L33/007
摘要： When GaN or other nitride III-V compound semiconductor layers are grown on a substrate such as a sapphire substrate, thickness x of the substrate relative to thickness y of the nitride III-V compound semiconductor layers is controlled to satisfy 0
摘要翻译：当GaN或其它氮化物III-V化合物半导体层在诸如蓝宝石衬底的衬底上生长时，衬底的厚度x相对于氮化物III-V化合物半导体层的厚度y被控制为满足0 =450μm。或者，如果基板的最大尺寸为D（cm），则其翘曲H在0

87. 发明授权

US5116899A Resin composition for electric insulation materials for vehicles 失效
标题翻译：用于车辆的电绝缘材料的树脂组合物
公开(公告)号：US5116899A
公开(公告)日：1992-05-26
申请号：US742281
申请日：1991-08-08
申请人： Kazuhiko Aratake , Masayoshi Horikoshi , Fumio Kato , Yasuhiko Suzuki , Yuki Morimoto
发明人： Kazuhiko Aratake , Masayoshi Horikoshi , Fumio Kato , Yasuhiko Suzuki , Yuki Morimoto
IPC分类号： C08K3/34 , C08K5/02 , C08K7/00 , C08K13/04 , C08L23/16 , F02B77/00 , H01B3/44
CPC分类号： H01B3/441 , C08K13/04
摘要： The present invention is directed to a resin composition for electric insulation materials for vehicles such as distributor caps which is prepared by blending a crystalline propylene-ethylene copolymer resin with 3 to 10 wt. % of a glass fiber, 10 to 20 wt. % of talc or mica, 5 to 20 wt. % of silica, 4 to 20 wt. % of modified polyolefin resins, 10 to 30 wt. % of halogen-containing flame retardants and 3 to 15 wt. % of flame retardant auxiliaries. In the resin composition of the present invention, balance is kept in all points of mechanical characteristics, mechanical characteristics at high temperature, electrical characteristics, nitric acid resistance, weld characteristics, blooming resistance, corona resistance and flame retardance.

88. 发明授权

US4844029A Heater for starting engine 失效
标题翻译：加热器起动发动机
公开(公告)号：US4844029A
公开(公告)日：1989-07-04
申请号：US870080
申请日：1986-06-03
申请人： Yasuhiko Suzuki
发明人： Yasuhiko Suzuki
IPC分类号： F01M5/00 , F01M5/02 , F01M11/03 , F02B1/04 , F02B75/02
CPC分类号： F01M5/021 , F02B1/04 , F02B2075/025
摘要： A heater for starting an engine is disclosed which comprises a cast body and a sheathed heating element embedded in the body at the time of casting thereof and is secured to the outside surface of the lubricating oil accumulation part of the engine or a transmission case. The cast body is mounted so as to close a hole provided in the outside surface of the lubricating oil accumulation part.
摘要翻译：公开了一种用于起动发动机的加热器，其包括在铸造时嵌入体内的铸体和护套加热元件，并且固定到发动机的润滑油积存部分的外表面或变速箱上。铸造体安装成封闭设置在润滑油积存部的外表面的孔。

89. 发明授权

US4266324A Silver weight unevenness correcting apparatus 失效
标题翻译：银重量不均匀校正装置
公开(公告)号：US4266324A
公开(公告)日：1981-05-12
申请号：US107571
申请日：1979-12-27
申请人： Junzo Hasegawa , Susumu Kawabata , Hiroshi Niimi , Yasuhiko Suzuki , Masaki Akatsuka , Takahiko Tsunekawa
发明人： Junzo Hasegawa , Susumu Kawabata , Hiroshi Niimi , Yasuhiko Suzuki , Masaki Akatsuka , Takahiko Tsunekawa
IPC分类号： D01H5/42 , D01H5/38
CPC分类号： D01H5/42
摘要： Sliver weight unevenness correcting apparatus of a feed-forward type has: a sliver weight measuring section for detecting the variations in weight of a bundle of slivers; a correcting draft device having front rollers disposed downstream of the sliver weight measuring section relative to the direction of advancement of slivers, the front rollers being rotated at a constant speed, and back rollers disposed between the sliver weight measuring section and the front rollers, the back rollers being rotated at a variable speed; a rotation detector for detecting the number of revolutions of the front rollers; an unevenness correcting circuit having a ratio circuit for operating a ratio (E.sub.0 /E.sub.1) between a reference sliver weight (E.sub.0) and the detected weight (E.sub.1) thereof, a delay circuit for delaying the speed control of the back rollers of the correcting draft device for a predetermined period of time, and a contrasting operational circuit for multiplying the ratio (E.sub.0 /E.sub.1) and a ratio (N.sub.F /k) between the number (N.sub.F) of revolutions of the front rollers and a reference draft value (k) and for producing a multiplied signal (E.sub.0 /E.sub.1 .multidot. N.sub.F /k); and a speed control circuit for producing a speed control signal responsive to the multiplied signal to control the speed of back rollers through a rotation transmitting mechanism. This arrangement enables accurate correction of sliver weight unevenness even short in wavelength in a drawing frame running at a high speed.
摘要翻译：前馈式的条子重量不均匀性校正装置具有：条子重量测量部分，用于检测条束重量的变化; 校正牵伸装置，其具有相对于条子前进方向设置在条子重量测量部分的下游的前辊，前辊以恒定速度旋转，以及设置在条子重量测量部分和前辊之间的后辊，后辊以可变速度旋转; 旋转检测器，用于检测前辊的转数; 不平坦校正电路，具有用于操作参考条子重量（E0）与检测到的重量（E1）之间的比率（E0 / E1）的比率电路，延迟电路，用于延迟校正纸张的后辊的速度控制装置，以及用于将前轮的转数（NF）与参考吃水值（k）之比（E0 / E1）和比（NF / k）之比的对比运算电路，并产生相乘信号（E0 / E1x NF / k）; 以及速度控制电路，用于响应于相乘的信号产生速度控制信号，以通过旋转传递机构来控制后滚筒的速度。这种布置使得能够精确地校正在高速运行的绘图框中甚至短波长的条子重量不均匀性。

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