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81. 发明授权

US08620193B2 Image forming apparatus and control method 有权
标题翻译：图像形成装置及控制方法
公开(公告)号：US08620193B2
公开(公告)日：2013-12-31
申请号：US13279598
申请日：2011-10-24
申请人： Yuichi Yamamoto , Hiroaki Tomiyasu , Shinnosuke Iwadate , Takahiko Yamaoka , Hiromi Shimura
发明人： Yuichi Yamamoto , Hiroaki Tomiyasu , Shinnosuke Iwadate , Takahiko Yamaoka , Hiromi Shimura
IPC分类号： G03G15/08
CPC分类号： G03G15/161 , G03G15/0131 , G03G15/5054 , G03G21/168
摘要： An image forming apparatus which performs toner discharge control for held toners of respective colors, comprises: an image carrier; a transfer member on which toner images of the respective colors formed on the image carrier are transferred and superposed; a calculation unit configured to calculate toner amounts used to form the toner images of the respective colors; and a control unit configured to superpose toners of at least two colors onto the transfer member when the toner amounts calculated by the calculation unit are smaller than a predetermined consumption amount, wherein the control unit decides a combination of colors of the toners to be superposed in accordance with differences between the toner amounts and the predetermined consumption amount.
摘要翻译：一种用于对各种颜色的保持的调色剂执行调色剂排放控制的图像形成装置，包括：图像载体; 形成在图像载体上的各种颜色的调色剂图像转印并重叠的转印部件; 计算单元，被配置为计算用于形成各种颜色的调色剂图像的调色剂量; 以及控制单元，其被配置为当由计算单元计算的调色剂量小于预定消耗量时，将至少两种颜色的调色剂叠加到转印部件上，其中控制单元决定要重叠的调色剂的颜色的组合根据调色剂量和预定消耗量之间的差异。

82. 外观设计

USD690660S1 Electromagnetic contact device 有权
公开(公告)号：USD690660S1
公开(公告)日：2013-10-01
申请号：US29419026
申请日：2012-04-24
申请人： Kenji Suzuki , Kouetsu Takaya , Yuichi Yamamoto , Yuji Shiba , Yasuhiro Naka
设计人： Kenji Suzuki , Kouetsu Takaya , Yuichi Yamamoto , Yuji Shiba , Yasuhiro Naka

83. 发明申请

US20120326815A1 ELECTROMAGNETIC SWITCH 失效
标题翻译：电磁开关
公开(公告)号：US20120326815A1
公开(公告)日：2012-12-27
申请号：US13519782
申请日：2011-06-14
申请人： Kenji Suzuki , Yasuhiro Naka , Kouetsu Takaya , Yuichi Yamamoto , Yuji Shiba
发明人： Kenji Suzuki , Yasuhiro Naka , Kouetsu Takaya , Yuichi Yamamoto , Yuji Shiba
IPC分类号： H01H50/16
CPC分类号： H01H50/546 , H01H50/34
摘要： An electromagnetic switch has a contact device having a pair of fixed contacts fixed thereof and maintaining a predetermined interval inside an arc-extinguishing chamber receptacle, and a movable contact disposed to be connectable with the pair of fixed contacts; and an electromagnetic device driving the movable contact. The electromagnetic device has a cylindrical exciting coil, a fixed core passing through center of the exciting coil, a magnetic yoke covering an outer side of the exciting coil, and a movable core facing the fixed core and the magnetic yoke, and armature surfaces of the fixed core and the magnetic yoke are formed on a side of the contact device than the exciting coil.
摘要翻译：电磁开关具有接触装置，其具有固定的一对固定触点，并且在灭弧室插座内保持预定的间隔，以及设置成可与该对固定触点连接的可动触头; 以及驱动可动触头的电磁装置。电磁装置具有圆柱形励磁线圈，通过励磁线圈的中心的固定铁芯，覆盖励磁线圈外侧的磁轭和面向固定铁心和磁轭的可动铁芯，以及固定铁芯和磁轭形成在接触装置的比励磁线圈的一侧。

84. 发明授权

US08314411B2 Particle beam therapy system 有权
标题翻译：粒子束治疗系统
公开(公告)号：US08314411B2
公开(公告)日：2012-11-20
申请号：US12738705
申请日：2009-04-24
申请人： Hisashi Harada , Takaaki Iwata , Taizo Honda , Yuehu Pu , Yuichi Yamamoto , Toshihiro Otani , Hidenobu Sakamoto
发明人： Hisashi Harada , Takaaki Iwata , Taizo Honda , Yuehu Pu , Yuichi Yamamoto , Toshihiro Otani , Hidenobu Sakamoto
IPC分类号： A61N5/10 , H01J37/256
CPC分类号： A61N5/1077 , A61N2005/1087 , A61N2005/1095
摘要： There is obtained a particle beam therapy system in which the beam size is reduced. There are provided an accelerator 14 that accelerates a charged particle beam; an irradiation apparatus that has a beam scanning apparatus 5a, 5b for performing scanning with the charged particle beam and irradiates the charged particle beam onto an irradiation subject; and a beam transport apparatus 15 that has a duct for ensuring a vacuum region or gas region that continues from the accelerator 14 to a beam outlet window 7 disposed at a more downstream position than the beam scanning apparatus 5a, 5b, and that transports the charged particle beam exiting from the accelerator 14 to the irradiation apparatus.
摘要翻译：获得了粒径减小的粒子束治疗系统。提供加速带电粒子束的加速器14; 具有用于利用带电粒子束进行扫描并将带电粒子束照射到照射对象上的光束扫描装置5a，5b的照射装置; 以及具有用于确保从加速器14延伸到设置在比光束扫描装置5a，5b的更下游位置处的光束出射窗口7的真空区域或气体区域的管道的光束传送装置15，并且传送带电粒子束从加速器14离开到照射装置。

85. 发明授权

US08222613B2 Scanning irradiation device of charged particle beam 有权
标题翻译：带电粒子束扫描照射装置
公开(公告)号：US08222613B2
公开(公告)日：2012-07-17
申请号：US12574136
申请日：2009-10-06
申请人： Shinya Tajiri , Yuichi Yamamoto , Yuehu Pu , Haruo Yamashita
发明人： Shinya Tajiri , Yuichi Yamamoto , Yuehu Pu , Haruo Yamashita
IPC分类号： G01K1/08 , H01J3/14 , H01J3/26
CPC分类号： G21K1/093 , A61N5/1042 , A61N5/1043 , A61N5/1078 , A61N5/1084 , A61N2005/1087 , G21K5/00
摘要： An inexpensive scanning irradiation device of a particle beam is obtained without using a rotating gantry. A first scanning electromagnet and a second scanning electromagnet, whose deflection surfaces of the particle beam are the same, and which bend the particle beam having an incident beam axis angle of approximately 45 degrees relative to a horizontal direction in reverse directions to each other; an electromagnet rotation driving mechanism which integrates the first and the second scanning electromagnets and rotates these scanning electromagnets around the incident beam axis; and a treatment bed are provided. The particle beam deflected by the first and the second scanning electromagnets can be obtained at a range of −45 degrees to +45 degrees in deflection angle from an incident beam axis direction.
摘要翻译：在不使用旋转机架的情况下获得粒子束的便宜的扫描照射装置。第一扫描电磁体和第二扫描电磁体，其粒子束的偏转面相同，并且使相对于水平方向的相反方向的入射光束轴角大约为45度的粒子束彼此弯曲; 电磁体旋转驱动机构，其对第一和第二扫描电磁体进行积分并使这些扫描电磁体绕入射光束轴线旋转; 并提供治疗床。由第一和第二扫描电磁体偏转的粒子束可以在从入射光束轴方向偏转角度-45度至+45度的范围内获得。

86. 发明授权

US07942399B2 Sheet processing apparatus and image forming apparatus having the same 有权
标题翻译：片材处理装置和具有该片材处理装置的图像形成装置
公开(公告)号：US07942399B2
公开(公告)日：2011-05-17
申请号：US12127426
申请日：2008-05-27
申请人： Katsuaki Hirai , Takeshi Aoyama , Shoko Magata , Yuichi Yamamoto , Masahiro Funakoshi , Daijiro Kato
发明人： Katsuaki Hirai , Takeshi Aoyama , Shoko Magata , Yuichi Yamamoto , Masahiro Funakoshi , Daijiro Kato
IPC分类号： B65H37/04
CPC分类号： B42C9/0081 , B65H31/34 , B65H37/04 , B65H2301/422 , B65H2301/5113 , B65H2801/27 , G03G15/6544 , G03G2215/00426 , G03G2215/00848 , G03G2215/00936
摘要： The invention is to stabilize an amount of application of a glue to sheets, to stabilize adhesive force between the sheets, and to further improve the productivity of a glued sheet bundle. A sheet processing apparatus includes a processing tray 130 that stacks a sheet discharged by a pair of discharge rollers, an attitude changing unit 150 that displaces the aligned sheet bundle on the processing tray 130 to partially expose sheet surfaces, an adhesive agent delivery device 160 that applies a glue to the exposed parts of the sheet surfaces of the displaced sheet bundle on the processing tray 130, and a sheet bundle aligning portion such as aligning plates 140 and 141 that aligns the glued sheet bundle.
摘要翻译：本发明是为了稳定胶粘剂在片材上的使用量，以稳定片材之间的粘合力，并进一步提高胶合片材的生产率。片材处理设备包括：堆叠由一对排出辊排出的片材的处理托盘130;位于处理托盘130上的排列的片材束以使部分地暴露片材表面的姿态改变单元150;粘合剂递送装置160，对处理托盘130上的移动的纸张束的片材表面的暴露部分施加胶水，以及对准粘合片材捆的对准板140和141的片材对齐部分。

87. 发明授权

US07771831B2 Infrared shielding film-coated glass plate and process for its production 有权
标题翻译：红外屏蔽薄膜镀膜玻璃板及其生产工艺
公开(公告)号：US07771831B2
公开(公告)日：2010-08-10
申请号：US11695893
申请日：2007-04-03
申请人： Hirokazu Kodaira , Hiroyuki Tomonaga , Kazuo Sunahara , Yuichi Yamamoto , Daisuke Kobayashi
发明人： Hirokazu Kodaira , Hiroyuki Tomonaga , Kazuo Sunahara , Yuichi Yamamoto , Daisuke Kobayashi
IPC分类号： B32B15/04 , B32B17/06
CPC分类号： C03C17/007 , C03C2217/45 , C03C2217/475 , C03C2217/476 , C03C2218/11
摘要： An infrared shielding film-coated glass plate comprising a glass substrate and an infrared shielding film formed thereon, wherein the infrared shielding film comprises fine ITO particles having an average primary particle diameter of at most 100 nm dispersed in a matrix containing silicon oxide as the main component and containing nitrogen in an amount of at least 2 at % based on Si and has a film thickness of from 200 to 3,000 nm.
摘要翻译：一种红外线屏蔽薄膜包覆玻璃板，包括玻璃基板和形成在其上的红外屏蔽膜，其中所述红外线屏蔽膜包括分散在含有氧化硅为主体的基体中的平均一次粒径为至多100nm的细小ITO颗粒组分，并且含有基于Si至少2at％的氮并具有200-3000nm的膜厚度。

88. 发明申请

US20100009274A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM 有权
标题翻译：基板加工方法和基板加工系统
公开(公告)号：US20100009274A1
公开(公告)日：2010-01-14
申请号：US12446289
申请日：2007-11-14
申请人： Yuichi Yamamoto
发明人： Yuichi Yamamoto
IPC分类号： G03F7/20 , G03B27/42
CPC分类号： H01L21/0274 , H01L21/3086 , H01L21/3088 , Y10S414/135 , Y10S414/137
摘要： There is disclosed a substrate processing method by a multi-patterning technique, which comprises a lithography process and an etching process, each of the processes is performed to one substrate at least twice. The substrate processing method is performed by using a substrate processing system comprising a plurality of process units for performing respective steps of the lithography process. When a second lithography process is performed to a substrate, process unit(s) for performing one or more steps of the second lithography process to be used in the second lithography process is automatically selected based on the process history of the first lithography process in such a way that the process unit(s) to be used in the second lithography process is (are) identical to the processed unit(s) used in the first lithography process.
摘要翻译：公开了一种通过多图案化技术的衬底处理方法，其包括光刻工艺和蚀刻工艺，每个工艺至少进行两次到一个衬底。基板处理方法通过使用包括用于执行光刻处理的各个步骤的多个处理单元的基板处理系统来执行。当对基板执行第二光刻工艺时，根据第一光刻工艺的处理历史自动选择用于执行在第二光刻工艺中使用的第二光刻工艺的一个或多个步骤的处理单元在第二光刻工艺中使用的处理单元与第一光刻工艺中使用的处理单元相同的方式。

89. 发明申请

US20090185151A1 SUBSTRATE PROCESSING SYSTEM AND SUBSTRATE TRANSFER METHOD 有权
标题翻译：基板处理系统和基板传输方法
公开(公告)号：US20090185151A1
公开(公告)日：2009-07-23
申请号：US12302853
申请日：2007-06-15
申请人： Yuichi Yamamoto , Tadayuki Yamaguchi , Yasuhito Saiga , Yoshiaki Yamada
发明人： Yuichi Yamamoto , Tadayuki Yamaguchi , Yasuhito Saiga , Yoshiaki Yamada
IPC分类号： G03B27/42 , G03B27/32
CPC分类号： H01L21/67225 , G03F7/70525 , G03F7/7075 , G03F7/70991 , H01L21/67727 , H01L21/67733 , Y10S414/135
摘要： A substrate processing system (100) includes a first automated substrate transfer line or main transfer line (20) configured to transfer wafers (W) over the entire system and to transfer wafers to and from respective process sections, and a second automated substrate transfer line or auxiliary transfer line (30) configured to transfer wafers (W) inside a photolithography process section (1a). The auxiliary transfer line (30) is disposed as a transfer mechanism independent of the main transfer line (20). An OHT (31) is configured to travel around on the auxiliary transfer line (30) having a loop shape, so as to transfer wafers (W) to and from and among the respective process apparatuses in the photolithography process section (1a).
摘要翻译：衬底处理系统（100）包括第一自动化衬底传送线或主传输线（20），其被配置为在整个系统上传送晶片（W）并将晶片传送到相应工艺部分和从相应工艺部分传送晶片，以及第二自动衬底传送线或辅助传输线（30），其配置成在光刻工艺部分（1a）内转移晶片（W）。辅助传输线（30）被设置为独立于主传输线（20）的传送机构。 OHT（31）构造成在具有环形的辅助传输线（30）周围行进，以便在光刻处理部分（1a）中将晶片（W）传送到各自的处理装置之间和之间。

90. 发明申请

US20090042348A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090042348A1
公开(公告)日：2009-02-12
申请号：US12182322
申请日：2008-07-30
申请人： Yuichi Yamamoto
发明人： Yuichi Yamamoto
IPC分类号： H01L21/8234
CPC分类号： H01L21/823456 , H01L29/66545 , H01L29/7843
摘要： In the present invention, there is provided a method for manufacturing a semiconductor device that has on a semiconductor substrate first and second transistor groups having different operating voltages respectively, the first transistor group having a first gate electrode, the second transistor group having a second gate electrode, the method including the steps of: forming the silicide layer on the first gate electrode of the first transistor group after setting a height of the first gate electrode smaller than a height of a dummy gate electrode formed in a dummy gate part; and forming a gate forming trench by removing the dummy gate part after forming an interlayer insulating film that covers a silicide layer and planarizing a surface of the interlayer insulating film.
摘要翻译：在本发明中，提供了一种制造半导体器件的方法，该半导体器件在半导体衬底上具有分别具有不同工作电压的第一和第二晶体管组，第一晶体管组具有第一栅电极，第二晶体管组具有第二栅极电极，该方法包括以下步骤：在将第一栅电极的高度设置为比形成在虚拟栅极部分中的虚设栅电极的高度之后，在第一晶体管组的第一栅电极上形成硅化物层; 以及在形成覆盖硅化物层并平面化层间绝缘膜的表面的层间绝缘膜之后，通过去除伪栅极部分来形成栅极形成沟槽。

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