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    • 84. 发明授权
    • Light emitting device having different multi-quantum well materials
    • 具有不同多量子阱材料的发光器件
    • US08502265B2
    • 2013-08-06
    • US12561761
    • 2009-09-17
    • Akira Tanaka
    • Akira Tanaka
    • H01L33/00
    • H01L33/145H01L33/08H01L33/305
    • A light emitting device includes: an active layer including a multi-quantum well having a well layer and a barrier layer, the active layer including a non-emitting region and an emitting region formed around the non-emitting region; a first cladding layer provided on a first major surface of the active layer; a pad electrode provided above the first cladding layer so that its center is located near a center of the non-emitting region as viewed in a direction perpendicular to the first major surface; and a second cladding layer provided below a second major surface of the active layer opposite to the first major surface. A bandgap of the well layer in the non-emitting region is wider than a bandgap of the well layer in the emitting region and narrower than a bandgap of the first cladding layer.
    • 发光器件包括:有源层,包括具有阱层和阻挡层的多量子阱,所述有源层包括非发射区和形成在所述非发射区周围的发射区; 设置在所述有源层的第一主表面上的第一覆层; 焊接电极,其设置在所述第一包层上方,使得其中心位于与所述第一主表面垂直的方向上观察的所述非发光区域的中心附近; 以及第二包覆层,设置在与第一主表面相对的有源层的第二主表面的下方。 非发光区域中的阱层的带隙比发光区域中的阱层的带隙宽,并且比第一包层的带隙窄。
    • 86. 发明申请
    • SEMICONDUCTOR LIGHT EMITTING DEVICE
    • 半导体发光器件
    • US20120273753A1
    • 2012-11-01
    • US13234014
    • 2011-09-15
    • Akira Tanaka
    • Akira Tanaka
    • H01L33/04H01L33/62
    • H01L33/38H01L33/20H01L2933/0016
    • According to an embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a plurality of thin parts thinner than other part being provided in the first semiconductor layer; a second semiconductor layer of a second conductivity type; and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. A transparent electrode is provided on a surface of the first semiconductor layer; a first electrode is provided on the transparent electrode; and a second electrode contacts a surface of the second semiconductor layer, wherein the second semiconductor layer is provided between the second electrode and the light emitting layer. A current blocking layer is provided for blocking a part of a current path between the transparent electrode and the second electrode, not overlapping the thin part in a planar view parallel to the surface of the second semiconductor layer.
    • 根据实施例,半导体发光器件包括第一导电类型的第一半导体层,在第一半导体层中设置有比其它部分薄的多个薄部分; 第二导电类型的第二半导体层; 以及设置在第一半导体层和第二半导体层之间的发光层。 在第一半导体层的表面上设置透明电极; 在透明电极上设置第一电极; 并且第二电极接触第二半导体层的表面,其中第二半导体层设置在第二电极和发光层之间。 提供电流阻挡层用于阻挡透明电极和第二电极之间的电流路径的一部分,而不是平行于第二半导体层的表面的平面图中的薄部分重叠。
    • 88. 发明申请
    • LIGHT-EMITTING DEVICE
    • 发光装置
    • US20110133154A1
    • 2011-06-09
    • US12782925
    • 2010-05-19
    • Akira TanakaYoko Motojima
    • Akira TanakaYoko Motojima
    • H01L33/04H01L33/30H01L33/36
    • H01L33/42H01L33/145
    • A light emitting device includes: a laminated body including a first conductivity type layer, a light emitting layer provided on the first conductivity type layer, and a second conductivity type layer provided on the light emitting layer, the laminated body being made of InxGayAl1-x-yN (0≦x≦1, 0≦y≦1, x+y≦1); a first electrode provided on the first conductivity type layer exposed to a bottom surface of a step difference provided in the laminated body; a translucent electrode provided on one portion of an upper face of the second conductivity type layer; and a second electrode provided on the translucent electrode and being smaller than the translucent electrode. A length of the other portion of the upper face of the second conductivity layer between an end portion of the translucent electrode and the side face of the step difference is 30 μm or more along a line connecting between a center of the first electrode and a center of the second electrode.
    • 发光器件包括:层叠体,其包括第一导电型层,设置在第一导电类型层上的发光层和设置在发光层上的第二导电类型层,所述层叠体由In x Ga y Al 1-x -yN(0≦̸ x≦̸ 1,0≦̸ y≦̸ 1,x + y≦̸ 1); 第一电极,其设置在暴露于设置在层叠体中的台阶差的底面的第一导电类型层上; 设置在所述第二导电类型层的上表面的一部分上的半透明电极; 以及设置在所述透光性电极上并且比所述透光性电极小的第二电极。 另外,透光性电极的端部与台阶差的侧面之间的第二导电层的上表面的另一部分的长度沿着连接在第一电极的中心与中心之间的线为30μm以上 的第二电极。
    • 89. 发明申请
    • COMMUNICATION SHEET STRUCTURE
    • 通讯表结构
    • US20110084890A1
    • 2011-04-14
    • US12996839
    • 2008-06-27
    • Akira TanakaMachiko OouchidaHiroyuki Mori
    • Akira TanakaMachiko OouchidaHiroyuki Mori
    • H01Q1/36
    • H04B13/00
    • A communication sheet structure for transmitting electromagnetic waves, and thereby performing communication, is characterized in that the communication sheet structure includes a planar base material with a relative dielectric constant at a frequency of from 800 MHz to 10 GHz of from 1.0 to 15.0, and one side of the base material includes conductor A existing portion and non-existing portion, and the other side of the base material includes a conductor B existing over 90% or more thereof. The communication sheet structure enables communication in two dimensions, and the communication sheet structure is extremely excellent in communication performances.
    • 用于传送电磁波,从而进行通信的通信片结构的特征在于,通信片结构包括平面基底材料,其相对介电常数在800MHz至10GHz的频率范围为1.0至15.0,一个 基体材料的一侧包括导体A存在部分和不存在部分,并且基材的另一侧包括存在于其中90%以上的导体B. 通信片结构使得能够在二维方面进行通信,并且通信片结构在通信性能方面非常优异。