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81. 发明授权

US08450911B2 Piezoelectric thin film having a high piezoelectric constant and a low leak current 有权
标题翻译：具有高压电常数和低泄漏电流的压电薄膜
公开(公告)号：US08450911B2
公开(公告)日：2013-05-28
申请号：US12948083
申请日：2010-11-17
申请人： Kenji Shibata , Kazufumi Suenaga , Akira Nomoto , Kazutoshi Watanabe
发明人： Kenji Shibata , Kazufumi Suenaga , Akira Nomoto , Kazutoshi Watanabe
IPC分类号： H01L41/187
CPC分类号： H01L41/316 , C04B35/495 , C04B2235/3201 , C04B2235/3251 , C04B2235/656 , C04B2235/762 , C04B2235/768 , C04B2235/787 , H01L41/0477 , H01L41/094 , H01L41/1873 , H01L41/29
摘要： To provide a piezoelectric thin film element comprising: a piezoelectric thin film on a substrate, having an alkali-niobium oxide-based perovskite structure expressed by a composition formula (K1-xNax)yNbO3, wherein composition ratios x, y of the piezoelectric thin film expressed by (K1-xNax)yNbO3 are in a range of 0.4≦x≦0.7 and 0.7≦y≦0.94.
摘要翻译：本发明提供一种压电薄膜元件，其特征在于，具有：基板上具有由组成式（K1-xNax）yNbO3表示的碱铌氧化物系钙钛矿结构的压电薄膜，其中，压电薄膜的组成比x，y 由（K1-xNax）yNbO3表示，在0.4 @ x @ 0.7和0.7 @ y @ 0.94的范围内。

82. 发明申请

US20130106242A1 PIEZOELECTRIC FILM ELEMENT AND PIEZOELECTRIC FILM DEVICE 审中-公开
标题翻译：压电薄膜元件和压电薄膜器件
公开(公告)号：US20130106242A1
公开(公告)日：2013-05-02
申请号：US13808718
申请日：2011-03-30
申请人： Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto , Fumimasa Horikiri
发明人： Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto , Fumimasa Horikiri
IPC分类号： H01L41/187 , H01L41/18
CPC分类号： H01L41/1873 , C04B35/495 , C04B2235/3201 , C04B2235/3251 , C04B2235/6588 , C04B2235/761 , C04B2235/768 , C04B2235/79 , H01L41/094 , H01L41/18 , H01L41/316
摘要： To provide a piezoelectric film element, including: a substrate; and a piezoelectric film having an alkali niobium oxide-based perovskite structure represented by a composition formula (K1-xNax)yNbO3 (0
摘要翻译：提供一种压电膜元件，包括：基板; 以及在基板上设置有由组成式（K1-xNax）yNbO3（0

83. 发明申请

US20130009519A1 PIEZOELECTRIC THIN-FILM ELEMENT AND PIEZOELECTRIC THIN-FILM DEVICE 有权
标题翻译：压电薄膜元件和压电薄膜器件
公开(公告)号：US20130009519A1
公开(公告)日：2013-01-10
申请号：US13636883
申请日：2011-03-24
申请人： Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto , Fumimasa Horikiri
发明人： Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto , Fumimasa Horikiri
IPC分类号： H01L41/18
CPC分类号： C23C14/025 , C23C14/088 , C23C14/35 , H01L41/0805 , H01L41/1873 , H01L41/316
摘要： There is provided a piezoelectric thin film element, comprising: a substrate 1; and a piezoelectric thin film 3 having an alkali niobium oxide-based perovskite structure represented by a composition formula (K1-xNax)yNbO3 provided on the substrate 1, wherein a carbon concentration of the piezoelectric thin film 3 is 2×1019/cm3 or less, or a hydrogen concentration of the piezoelectric thin film 3 is 4×1019/cm3 or less.
摘要翻译：提供了一种压电薄膜元件，包括：基板1; 以及设置在基板1上的由组成式（K1-xNax）yNbO3表示的碱铌氧化物系钙钛矿结构的压电薄膜3，其中压电薄膜3的碳浓度为2×1019 / cm3以下，或压电薄膜3的氢浓度为4×1019 / cm3以下。

84. 发明授权

US08198437B2 6-pyrimidinyl-pyrimid-4-one derivative 有权
标题翻译：嘧啶-4-酮衍生物
公开(公告)号：US08198437B2
公开(公告)日：2012-06-12
申请号：US12677213
申请日：2008-09-12
申请人： Kenji Fukunaga , Kazutoshi Watanabe , Pascal Barneoud , Jesus Benavides , Jeremy Pratt
发明人： Kenji Fukunaga , Kazutoshi Watanabe , Pascal Barneoud , Jesus Benavides , Jeremy Pratt
IPC分类号： C07D413/00
CPC分类号： C07D413/14
摘要： A compound represented by the formula (I) or a pharmaceutically acceptable salt thereof: which is used for preventive and/or therapeutic treatment of a disease caused by abnormal activity of tau protein kinase 1 such as a neurodegenerative diseases (e.g. Alzheimer disease).
摘要翻译：由式（I）表示的化合物或其药学上可接受的盐：用于预防和/或治疗由tau蛋白激酶1的异常活性（例如神经变性疾病（例如阿尔茨海默病））引起的疾病。

85. 发明申请

US20120025667A1 Method for manufacturing a piezoelectric film wafer, piezoelectric film element, and piezoelectric film device 有权
标题翻译：制造压电薄膜晶片，压电薄膜元件和压电薄膜器件的方法
公开(公告)号：US20120025667A1
公开(公告)日：2012-02-02
申请号：US13137202
申请日：2011-07-27
申请人： Fumimasa Horikiri , Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto
发明人： Fumimasa Horikiri , Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto
IPC分类号： H01L41/04 , B32B3/00 , H01L41/22
CPC分类号： H01L41/0805 , H01L21/67069 , H01L41/1873 , H01L41/314 , H01L41/316 , H01L41/318 , H01L41/332 , H05K3/108 , Y10T428/24479
摘要： A method for manufacturing a piezoelectric film wafer includes a first processing step for carrying out an ion etching on a KNN piezoelectric film formed on a substrate by using a gas containing Ar, and a second processing step for carrying out a reactive ion etching by using a mixed etching gas containing a fluorine-based reactive gas and Ar after the first processing step.
摘要翻译：一种压电薄膜晶片的制造方法，其特征在于，包括：通过使用含有Ar的气体，在形成于基板上的KNN压电薄膜进行离子蚀刻的第一加工工序;以及第二加工工序，含有氟系反应性气体的混合蚀刻气体和第一处理工序后的Ar。

86. 发明申请

US20110187237A1 PIEZOELECTRIC FILM ELEMENT, AND MANUFACTURING METHOD OF THE SAME AND PIEZOELECTRIC FILM DEVICE 有权
标题翻译：压电薄膜元件及其制造方法及压电薄膜器件
公开(公告)号：US20110187237A1
公开(公告)日：2011-08-04
申请号：US13018693
申请日：2011-02-01
申请人： Kazufumi SUENAGA , Kenji Shibata , Kazutoshi Watanabe , Akira Nomoto
发明人： Kazufumi SUENAGA , Kenji Shibata , Kazutoshi Watanabe , Akira Nomoto
IPC分类号： H01L41/047
CPC分类号： H01L41/187 , H01L41/0477 , H01L41/0805 , H01L41/094 , H01L41/1873 , H01L41/29 , H01L41/316
摘要： A piezoelectric film element is provided, which is capable of improving piezoelectric properties, having on a substrate at least a lower electrode, a lead-free piezoelectric film, and an upper electrode, wherein at least the lower electrode out of the lower electrode and the upper electrode has a crystal structure of a cubic crystal system, a tetragonal crystal system, an orthorhombic crystal system, a hexagonal crystal system, a monoclinic crystal system, a triclinic crystal system, a trigonal crystal system, or has a composition in which one of these crystals exists or two or more of them coexist, and crystal axes of the crystal structure are preferentially oriented to a specific axis smaller than or equal to two axes of these crystals, and a ratio c/a′ is set in a range of 0.992 or more and 0.999 or less, which is the ratio of a crystal lattice spacing c in a direction of a normal line to the substrate surface, with respect to a crystal lattice spacing a′ whose inclination angle from the substrate surface is in a range of 10° or more and 30° or less.
摘要翻译：提供一种能够改善压电性能的压电膜元件，其在基板上至少具有下电极，无铅压电膜和上电极，其中至少下电极中的下电极和上电极具有立方晶系，四方晶系，正交晶系，六方晶系，单斜晶系，三斜晶系，三
晶体系的晶体结构，或其组成为：这些晶体存在或其中的两种以上共存，并且晶体结构的晶轴优先取向小于或等于这些晶体的两个轴的特定轴，并且将比率c / a'设定在0.992的范围内以上且0.999以下，其是法线方向的晶格间距c与基板表面的比率，相对于晶格间距a'，其倾斜角从基板表面的厚度为10°以上且30°以下的范围。

87. 发明申请

US20110175488A1 PIEZOELECTRIC THIN FILM ELEMENT AND PIEZOELECTRIC THIN FILM DEVICE 有权
标题翻译：压电薄膜元件和压电薄膜器件
公开(公告)号：US20110175488A1
公开(公告)日：2011-07-21
申请号：US13006842
申请日：2011-01-14
申请人： Kenji Shibata , Kazufumi Suenaga , Akira Nomoto , Kazutoshi Watanabe
发明人： Kenji Shibata , Kazufumi Suenaga , Akira Nomoto , Kazutoshi Watanabe
IPC分类号： H01L41/08 , H01L41/18 , H01L41/047
CPC分类号： H01L41/094 , H01L41/1873 , H03H9/02031
摘要： To provide a piezoelectric thin film on a substrate, having an alkali-niobium oxide-based perovskite structure expressed by a composition formula (K1−xNax)yNbO3, wherein the composition ratio x of the piezoelectric thin film expressed by (K1−xNax)yNbO3 is in a range of 0.4≦x≦0.7, and a half width of a rocking curve of (001) plane by X-ray diffraction measurement is in a range of 0.5° or more and 2.5° or less.
摘要翻译：为了在基板上提供具有由组成式（K1-xNax）yNbO3表示的碱金属氧化铌基钙钛矿结构的压电薄膜，其中由（K1-xNax）yNbO3表示的压电薄膜的组成比x 在0.4≤n1E的范围内，x＆nlE; 0.7，通过X射线衍射测定的（001）面的摆动曲线的半宽度在0.5°以上且2.5°以下的范围内。

88. 发明申请

US20110038392A1 Softening point measuring apparatus and thermal conductivity measuring apparatus 有权
标题翻译：软化点测量仪和热导率测量仪
公开(公告)号：US20110038392A1
公开(公告)日：2011-02-17
申请号：US12806364
申请日：2010-08-11
申请人： Kazunori Ando , Masayuki Iwasa , Masatsugu Shigeno , Hiroumi Momota , Kazutoshi Watanabe
发明人： Kazunori Ando , Masayuki Iwasa , Masatsugu Shigeno , Hiroumi Momota , Kazutoshi Watanabe
IPC分类号： G01N25/02 , G01N25/18
CPC分类号： G01N25/18 , G01N25/04 , G01Q60/58
摘要： In a local softening point measuring apparatus and thermal conductivity measuring apparatus using a probe microscope as a base, environment of the prob˜ and a sample surface is set to 1/100 atmospheric pressure (103 Pa) or lower. Otherwise, a side surface of the probe is coated with a thermal insulation material having a thickness that enables thermal dissipation to be reduced to 1/100 or lower, to thereby reduce the thermal dissipation from the side surface of the probe, and exchange heat substantially only at the contacting portion between the probe and the sample surface.
摘要翻译：在使用探针显微镜作为基础的局部软化点测定装置和热导率测定装置中，将试样表面的环境设定为1/100大气压（103Pa）以下。否则，探针的侧表面涂覆有能够使散热减小到1/100或更低的厚度的绝热材料，从而减少从探针侧表面的散热，并且基本上交换热量仅在探针和样品表面之间的接触部分处。

89. 发明授权

US07787133B2 Optical displacement-detecting mechanism and probe microscope using the same 有权
标题翻译：光学位移检测机构和探针显微镜使用相同
公开(公告)号：US07787133B2
公开(公告)日：2010-08-31
申请号：US11840549
申请日：2007-08-17
申请人： Masato Iyoki , Hiroyoshi Yamamoto , Kazutoshi Watanabe
发明人： Masato Iyoki , Hiroyoshi Yamamoto , Kazutoshi Watanabe
IPC分类号： G01B11/14
CPC分类号： G01Q20/02
摘要： The optical displacement-detecting mechanism has: a light source for irradiating a target for measurement with light; a light source-driving circuit for driving the light source; an optical detector made from a semiconductor for receiving light after the irradiation of the target for measurement by the light source and converting the light into an electric signal thereby to detect an intensity of light; and an amplifier including a current-voltage conversion circuit for performing current-to-voltage conversion on a detection signal of the optical detector with a predetermined amplification factor. In the optical displacement-detecting mechanism, a light source having a spectrum half width of 10 nm or larger is used, whereby the light source can be driven with an output power of 2 mW or larger without generating mode hop noise and optical feedback noise.
摘要翻译：光学位移检测机构具有：用光照射被测物的光源; 用于驱动光源的光源驱动电路; 由半导体制成的光检测器，用于在由光源照射测量目标物之后接收光，并将光转换成电信号从而检测光的强度; 以及放大器，其包括用于以预定的放大系数对光学检测器的检测信号进行电流 - 电压转换的电流 - 电压转换电路。在光学位移检测机构中，使用光谱半宽度为10nm以上的光源，由此可以以2mW以上的输出功率驱动光源，而不产生模式跳噪声和光反馈噪声。

90. 发明授权

US07571639B2 Method of correcting opaque defect of photomask using atomic force microscope fine processing device 有权
标题翻译：使用原子力显微镜精细加工装置校正光掩模不透明缺陷的方法
公开(公告)号：US07571639B2
公开(公告)日：2009-08-11
申请号：US11796996
申请日：2007-04-27
申请人： Toshio Doi , Kazutoshi Watanabe , Osamu Takaoka , Atsushi Uemoto
发明人： Toshio Doi , Kazutoshi Watanabe , Osamu Takaoka , Atsushi Uemoto
IPC分类号： H01J37/352
CPC分类号： G03F1/72 , G01Q10/06 , G01Q30/06 , G01Q80/00
摘要： An opaque defect is processed by scanning with a high load or height fixed mode using a probe harder than a pattern material of a photomask at the time of going scanning, and is observed by scanning with a low load or intermittent contact mode at the time of returning scanning so as to detect an ending point of the opaque defect by the height information. When there is a portion reaching to a glass substrate as an ending point, this portion is not scanned by the high load or height fixed mode in the next processing, and only a portion not reaching to the ending point is scanned by the high load or height fixed mode.
摘要翻译：通过使用在扫描时比光掩模的图案材料更硬的探针，以高负载或高度固定模式进行扫描来处理不透明缺陷，并且通过在低负载或间歇接触模式下扫描来观察不透明缺陷返回扫描，以便通过高度信息检测不透明缺陷的终点。当到达玻璃基板的部分为终点时，在下一个处理中该部分不被高负载或高度固定模式扫描，并且只有未到达终点的部分被高负载扫描高度固定模式。

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