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    • 82. 发明申请
    • MOLD-RELEASING AGENT
    • 模具发酵剂
    • US20120077930A1
    • 2012-03-29
    • US13376335
    • 2010-06-03
    • Yoshiyama KaneumiSeiichiro MurataKatsuyuki Sato
    • Yoshiyama KaneumiSeiichiro MurataKatsuyuki Sato
    • C09D171/08
    • B29C33/62B29K2027/12B29K2096/02C08F283/06C08G2261/128C08L27/12C08L71/02C08L2205/05C09D151/00C08F214/18C08L2666/04
    • Disclosed is a mold-releasing agent comprising, as active ingredients, a graft copolymer (A) in which a polyalkylene glycol or an alkyl ether thereof is graft-copolymerized with a polyfluoro-1-alkene represented by the general formula: CnF2n+1(CH2CF2)a(CF2CF2)bCH═CH2 (wherein n is an integer of 1 to 6, a is an integer of 1 to 4, and b is an integer of 1 to 3), and a polyfluoroalkylphosphonic acid represented by the general formula: CnF2n+1(CH2CF2)a(CF2CF2)b(CH2CH2)cP(O)(OH)2 (wherein n is an integer of 1 to 6, a is an integer of 1 to 4, and b is an integer of 1 to 3, and c is an integer of 1 to 3) or a salt thereof (B). The mold-releasing agent comprises, as an active ingredient, a compound having a perfluoroalkyl group containing 6 or less carbon atoms, which is said to have low bioaccumulation potential, and having mold release performance equivalent to or more than that of a mold-releasing agent comprising a compound having a perfluoroalkyl group containing 8 or more carbon atoms as an active ingredient.
    • 公开了一种脱模剂,其包含作为活性成分的接枝共聚物(A),其中聚亚烷基二醇或其烷基醚与由下列通式表示的多氟-1-烯烃接枝共聚:CnF2n + 1( CH 2 CF 2)a(CF 2 CF 2)b CH = CH 2(其中,n为1〜6的整数,a为1〜4的整数,b为1〜3的整数),以及由以下通式表示的多氟烷基膦酸: CnF2n + 1(CH2CF2)a(CF2CF2)b(CH2CH2)cP(O)(OH)2(其中n为1〜6的整数,a为1〜4的整数,b为1〜 3,c为1〜3的整数)或其盐(B)。 脱模剂包含具有6个以下碳原子的全氟烷基的化合物作为活性成分,其被认为具有低的生物累积潜力,并且具有与脱模剂相当或更多的脱模性能 包含具有8个以上碳原子的全氟烷基的化合物作为活性成分的药剂。
    • 83. 发明申请
    • CONTROL DEVICE, CONTROL METHOD, AND PROGRAM
    • 控制装置,控制方法和程序
    • US20110301722A1
    • 2011-12-08
    • US13116400
    • 2011-05-26
    • Katsuyuki SatoYoshimasa UtsumiKazuhiro Sato
    • Katsuyuki SatoYoshimasa UtsumiKazuhiro Sato
    • G05B11/01
    • H04L12/2816G08C17/02G08C2201/40G08C2201/42H04L12/282
    • A control device, which handles a network system in which electronic devices installed in each of multiple rooms are connected via a communication network and each electronic device can perform communication via the communication network, includes: a control unit to selectively set a first control mode in which operation control according to operation input is performed as to a particular single electronic device, a second control mode in which operation control according to operation input is performed in common as to electronic devices installed in the same room, and a third control mode in which operation control according to operation input is performed in common as to electronic devices connected to the communication network, as an operation control mode according to predetermined operation input, and to generate a control command; and a transmission unit to transmit a control command that the control unit has generated according to the control mode.
    • 一种控制装置,其处理网络系统,其中安装在多个房间中的电子设备经由通信网络连接,并且每个电子设备可以经由通信网络执行通信,包括:控制单元,用于选择性地设置第一控制模式 对特定的单个电子设备执行根据操作输入的操作控制,其中根据操作输入的操作控制与安装在同一房间中的电子设备共同执行的第二控制模式,以及第三控制模式,其中 根据操作输入的操作控制与连接到通信网络的电子设备共同执行,作为根据预定操作输入的操作控制模式,并且产生控制命令; 以及发送单元,其根据控制模式发送控制单元已经生成的控制命令。
    • 84. 发明授权
    • Polyfluoro-1-alkene and method for producing the same
    • 多氟-1-烯烃及其制备方法
    • US07956225B2
    • 2011-06-07
    • US12993564
    • 2009-06-12
    • Katsuyuki SatoSeiichiro MurataAkihiko IkedaYoshiyama Kaneumi
    • Katsuyuki SatoSeiichiro MurataAkihiko IkedaYoshiyama Kaneumi
    • C07C17/00C07C21/18
    • C07C21/18C07C17/25C08F14/18C08F2/10
    • A polyfluoro-1-alkene represented by the general formula: CF3(CF2)nCH2(CF2)mCH═CH2 [I], wherein n is an integer of 0 to 5, and m is an integer of 1 to 7, is produced by reacting a polyfluoroalkyl iodide represented by the general formula: CF3(CF2)nCH2(CF2)m(CH2CH2)I [II], wherein n is an integer of 0 to 5, and m is an integer of 1 to 7, with an inorganic basic compound in the presence of a phase transfer catalyst. Alternatively, the polyfluoro-1-alkene is produced by reacting the polyfluoroalkyl iodide [II] with a nitrogen-containing organic basic compound, and is obtained product [I] as one fraction thereof. By the copolymerization of the polyfluoro-1-alkene with other fluorinated olefin monomers, a fluorine-containing copolymer having excellent light transmittance in the visible light range is formed.
    • 由通式CF 3(CF 2)n CH 2(CF 2)m CH = CH 2 [I]表示的多氟-1-烯烃,其中n为0〜5的整数,m为1〜7的整数,由 使由通式CF 3(CF 2)n CH 2(CF 2)m(CH 2 CH 2)I [II]表示的多氟烷基碘反应,其中n为0〜5的整数,m为1〜7的整数,与无机 在相转移催化剂存在下的碱性化合物。 或者,通过使多氟烷基碘化物[II]与含氮有机碱性化合物反应来制造多氟-1-烯烃,得到作为其一部分的产物[I]。 通过多氟-1-烯烃与其它氟化烯烃单体的共聚,形成在可见光范围内具有优异的透光率的含氟共聚物。
    • 89. 发明授权
    • Semiconductor memory
    • 半导体存储器
    • US5629899A
    • 1997-05-13
    • US415510
    • 1995-04-03
    • Katsuyuki Sato
    • Katsuyuki Sato
    • G11C7/10G11C11/4096G11C8/00
    • G11C7/1075G11C11/4096
    • A semiconductor memory, such as, of a dual-port type includes dynamic RAM cells, such as of the single-transistor, single-capacitor type in which each such cell is coupled to one data line of a corresponding pair of data lines and a word line. The memory has a plurality of sense amplifiers which are coupled to a plurality of data line pairs, respectively, a plurality of pairs of switching MOSFETs respectively coupled between the plurality of data line pairs and a common data line pair for providing either selective or simultaneous connection of the plurality of data line pairs to the common data line during a first write mode and a second write mode, respectively. The disclosed memory also has a write circuit coupled between an external input/output terminal and a common data line pair and provides a first write signal which has a first two-level signal range in accordance with the first write mode and a second write signal having a second two-level signal range different from that of the first-signal range in accordance with the second write mode. The semiconductor memory is also used for storing image data and is provided with a serial output circuit having a converter coupling the plurality of data lines therethrough to a serial input/output port external terminal.
    • 诸如双端口类型的半导体存储器包括诸如单晶体管单电容器类型的动态RAM单元,其中每个这样的单元耦合到相应的一对数据线的一个数据线,以及 字线。 存储器具有多个读出放大器,其分别耦合到多个数据线对,分别耦合在多个数据线对之间的多对开关MOSFET和用于提供选择性或同时连接的公共数据线对 分别在第一写入模式和第二写入模式期间将多条数据线对分配给公共数据线。 所公开的存储器还具有耦合在外部输入/输出端子和公共数据线对之间的写入电路,并提供具有根据第一写入模式的第一两级信号范围的第一写信号和具有第一写信号的第二写信号, 与根据第二写入模式的第一信号范围不同的第二二级信号范围。 半导体存储器还用于存储图像数据,并且具有串行输出电路,该串行输出电路具有将多个数据线耦合到串行输入/输出端口外部端子的转换器。
    • 90. 再颁专利
    • Semiconductor memory device having a back-bias voltage generator
    • 具有背偏电压发生器的半导体存储器件
    • USRE34797E
    • 1994-11-22
    • US962329
    • 1992-10-16
    • Katsuyuki SatoKazumasa Yanagisawa
    • Katsuyuki SatoKazumasa Yanagisawa
    • G11C11/407G11C5/14G11C11/4074G11C7/02
    • G11C5/146G11C11/4074
    • In typical MOS integrated circuit devices, the level of the back-bias voltage which is generated by a built-in back-bias generation circuit and is supplied to a semiconductor substrate is changed by an undesirable leakage current flowing through the semiconductor substrate. The leakage current is not constant. Instead, it becomes relatively small when a main circuit formed on the semiconductor substrate such as a dynamic RAM is not operative, and relatively great when such a circuit is operative. To reduce the change of the back-bias voltage resulting from the change of the leakage current, a back-bias voltage generation circuit is provided which has output capacity of a plurality of levels. Its output capacity is increased in response to an operation control signal of the main circuit. The level change of the back-bias voltage generation circuit can further be reduced by providing a level detection circuit for detecting the level change and a feedback circuit for controlling the back-bias voltage generation circuit in accordance with the output of the level detection circuit.
    • 在典型的MOS集成电路器件中,内置反向偏置产生电路产生并提供给半导体衬底的背偏电压的电平由于流过半导体衬底的不期望的漏电流而改变。 漏电流不是恒定的。 相反,当形成在诸如动态RAM的半导体衬底上的主电路不可操作时,其变得相对较小,并且当这种电路工作时相对较大。 为了减少由漏电流的变化引起的背偏电压的变化,提供了具有多个电平的输出容量的背偏压产生电路。 其输出容量响应于主电路的操作控制信号而增加。 通过提供用于检测电平变化的电平检测电路和根据电平检测电路的输出来控制反偏压产生电路的反馈电路,可以进一步降低背偏压产生电路的电平变化。