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    • 89. 发明申请
    • Semiconductor device, a manufacturing method thereof, and a camera
    • 半导体装置及其制造方法以及照相机
    • US20060186439A1
    • 2006-08-24
    • US11407270
    • 2006-04-20
    • Hiroshi Tanaka
    • Hiroshi Tanaka
    • H01L27/148H01L21/339
    • H01L29/66946H01L27/14689H01L27/14806
    • A semiconductor device includes a transfer channel for transferring charge generated by photoelectric conversion, an insulating film formed on the transfer channel, and a transfer electrode for applying a transfer voltage to the transfer channel via the insulating film. The insulating film has a first thickness and a second thickness that is thinner than the first thickness. The insulating film has the first thickness below both ends of the transfer electrode in a width direction of the transfer channel that is orthogonal to a charge transfer direction through the transfer channel, and the insulating film has the second thickness on a part including a center of the transfer channel in the width direction.
    • 半导体器件包括用于传输由光电转换产生的电荷的转移通道,形成在转移通道上的绝缘膜,以及用于经由绝缘膜向转移通道施加转印电压的转印电极。 绝缘膜具有比第一厚度薄的第一厚度和第二厚度。 所述绝缘膜在与所述传输沟道的电荷传输方向正交的所述传输沟道的宽度方向上具有位于所述传输电极的两端下方的第一厚度,并且所述绝缘膜在包括所述传输通道的中心的部分上具有第二厚度 传输通道在宽度方向。