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81. 发明授权

US4294975A Hydroalkenyloxysilanes 失效
标题翻译：羟基烷氧基硅烷
公开(公告)号：US4294975A
公开(公告)日：1981-10-13
申请号：US151696
申请日：1980-05-20
申请人： Toshio Takago , Masatoshi Arai , Koji Futatsumori
发明人： Toshio Takago , Masatoshi Arai , Koji Futatsumori
IPC分类号： C08K5/00 , C07F7/02 , C07F7/04 , C07F7/08 , C07F7/18 , C08K5/5425 , C08L83/04
CPC分类号： C07F7/1868 , C07F7/025 , C07F7/04 , C07F7/0896 , C08K5/54
摘要： The invention provides a novel class of organosilicon compounds which are hydrogenalkenyloxysilanes represented by the general formula ##STR1## in which R.sup.1 is a monovalent hydrocarbon group having from 1 to 8 carbon atoms, R.sup.2, R.sup.3 and R.sup.4 are each a hydrogen atom or a monovalent hydrocarbon group having from 1 to 8 carbon atoms and n is a number of zero, 1 or 2. The silane compounds are readily obtained by the dehydrochlorination reaction between a corresponding hydrogen-containing chlorosilane compound and an .alpha., .beta.-unsaturated aldehyde compound or a ketone compound in the presence of an acid acceptor. The compounds are useful as a modifying agent in the silicone technology and also serve as a curing agent.
摘要翻译：本发明提供了一类新的有机硅化合物，它们是由通式“IMAGE”表示的氢链烷氧基硅烷，其中R 1是具有1至8个碳原子的一价烃基，R 2，R 3和R 4各自为氢原子或一价烃具有1至8个碳原子的基团，n是0,1或2的数。硅烷化合物通过相应的含氢氯硅烷化合物和α，β-不饱和醛化合物或酮之间的脱氯化氢反应容易地获得化合物在酸受体的存在下。该化合物可用作硅氧烷技术中的改性剂，并且还用作固化剂。

82. 发明授权

US4288375A Novel organosilane compounds 失效
标题翻译：新型有机硅烷化合物
公开(公告)号：US4288375A
公开(公告)日：1981-09-08
申请号：US162534
申请日：1980-06-24
申请人： Masatoshi Arai , Koji Futatsumori
发明人： Masatoshi Arai , Koji Futatsumori
IPC分类号： C08K5/00 , C07F7/18 , C08K5/5435 , C08K9/06 , C08L67/00 , C07D303/02
CPC分类号： C07F7/1828 , C08K9/06
摘要： The invention provides a novel class of organosilane compounds having a glycidyloxy group and one or more of alkenyloxy groups bonded to the silicon atom as represented by the general formula ##STR1## in which R.sup.1 is a monovalent hydrocarbon group having from 1 to 8 carbon atoms, R.sup.2, R.sup.3 and R.sup.4 are each a hydrogen atom or a monovalent hydrocarbon group having from 1 to 8 carbon atoms, m is an integer of 3, 4 or 5 and n is a number of zero, 1 or 2. The organosilane compound, e.g. 3-glycidyloxypropyl-containing alkenyloxysilanes can be readily prepared by the addition reaction of glycidyl allyl ether and a corresponding alkenyloxysilane having a hydrogen atom directly bonded to the silicon atom in the presence of a platinum catalyst. The organosilane compounds are useful as a coupling agent to increase adhesive bonding strength between inorganic and organic materials.
摘要翻译：本发明提供一种具有缩水甘油氧基和一个或多个与硅原子键合的链烯氧基的新一类有机硅烷化合物，如通式“IMAGE”所示，其中R 1是具有1至8个碳原子的一价烃基， R2，R3和R4各自为氢原子或具有1至8个碳原子的一价烃基，m为3,4或5的整数，n为0,1或2的数。有机硅烷化合物，例如通过在铂催化剂存在下，缩水甘油基烯丙基醚和具有直接与硅原子键合的氢原子的相应的烯基氧基硅烷的加成反应，可以容易地制备含有3-缩水甘油氧基丙烯的烯基氧基硅烷。有机硅烷化合物可用作偶联剂以增加无机和有机材料之间的粘合强度。

83. 发明授权

US08987386B2 Method of producing polymeric compound, resist composition, and method of forming resist pattern 有权
标题翻译：制备高分子化合物的方法，抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US08987386B2
公开(公告)日：2015-03-24
申请号：US13491860
申请日：2012-06-08
申请人： Yoshiyuki Utsumi , Takahiro Dazai , Masatoshi Arai , Takaaki Kaiho
发明人： Yoshiyuki Utsumi , Takahiro Dazai , Masatoshi Arai , Takaaki Kaiho
IPC分类号： C08F228/02 , C08F228/06 , C08F8/34 , C08F20/36 , C08F20/38 , C08F220/18 , C08F220/28 , C08F220/34 , C08F220/38 , C08F8/00 , G03F7/20 , G03F7/004 , G03F7/11 , G03F7/038 , G03F7/039
CPC分类号： C08F8/34 , C08F220/18 , C08F220/28 , C08F228/02 , C08F228/06 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/20 , G03F7/2041 , Y10S522/904
摘要： A method of producing a polymeric compound containing a structural unit that decomposes upon exposure to generate an acid, the method including: synthesizing a precursor polymer by polymerizing a water-soluble monomer having an anionic group, washing the precursor polymer with water, and subsequently subjecting the precursor polymer to a salt exchange with an organic cation. Also, a polymeric compound produced using the method of producing a polymeric compound, and a method of forming a resist pattern using the resist composition.
摘要翻译：一种制备含有暴露后分解产生酸的结构单元的聚合物的方法，该方法包括：通过聚合具有阴离子基团的水溶性单体，用水洗涤前体聚合物，然后经受该前体聚合物与有机阳离子进行盐交换。另外，使用高分子化合物的制造方法制造的高分子化合物，以及使用该抗蚀剂组合物形成抗蚀剂图案的方法。

84. 发明申请

US20120241854A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120241854A1
公开(公告)日：2012-09-27
申请号：US13239101
申请日：2011-09-21
申请人： Tsuyoshi OHTA , Masatoshi Arai , Miwako Suzuki
发明人： Tsuyoshi OHTA , Masatoshi Arai , Miwako Suzuki
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7813 , H01L29/0619 , H01L29/0856 , H01L29/0865 , H01L29/1095 , H01L29/167 , H01L29/407 , H01L29/4236 , H01L29/42368 , H01L29/42376 , H01L29/66734 , H01L29/7397 , H01L29/861 , H01L29/8725
摘要： According to one embodiment, the semiconductor device includes a first semiconductor layer. The semiconductor device includes a plurality of base regions, the base regions are provided on a surface of the first semiconductor layer. The semiconductor device includes a source region selectively provided on each of surfaces of the base regions. The semiconductor device includes a gate electrode provided via a gate insulating film in each of a pair of trenches, each of the trenches penetrate the base regions from a surface of the source region to the first semiconductor layer. The semiconductor device includes a field plate electrode provided via a field plate insulating film in each of the pair of trenches under the gate electrode. A thickness of a part of the field plate insulating film is greater than a thickness of the gate insulating film.
摘要翻译：根据一个实施例，半导体器件包括第一半导体层。所述半导体器件包括多个基极区域，所述基极区域设置在所述第一半导体层的表面上。半导体器件包括选择性地设置在基极区域的每个表面上的源极区域。半导体器件包括在一对沟槽中的每一个中经由栅极绝缘膜提供的栅电极，每个沟槽从源极区域的表面到第一半导体层穿透基极区域。半导体器件包括在栅电极下的一对沟槽中的每一个中经由场板绝缘膜设置的场板电极。场板绝缘膜的一部分的厚度大于栅极绝缘膜的厚度。

85. 发明申请

US20090317955A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090317955A1
公开(公告)日：2009-12-24
申请号：US12551848
申请日：2009-09-01
申请人： Nobuyoshi TAKAHASHI , Satoshi Iwamoto , Fumihiko Noro , Masatoshi Arai
发明人： Nobuyoshi TAKAHASHI , Satoshi Iwamoto , Fumihiko Noro , Masatoshi Arai
IPC分类号： H01L21/336
CPC分类号： H01L27/11568 , H01L21/823878 , H01L27/105 , H01L27/1052 , H01L27/11573 , H01L29/792 , Y10S438/954
摘要： A semiconductor device includes a memory section formed at a semiconductor substrate and including a first transistor having an ONO film that can store charges between the semiconductor substrate and a memory electrode and a first STI region for isolating the first transistor, and a CMOS section formed at the semiconductor substrate and including a second transistor having a CMOS electrode and a gate dielectric and a second STI region for isolating the second transistor. The height of the top surface of the first STI region is set equal to or smaller than the height of the top surface of the second STI region.
摘要翻译：一种半导体器件包括形成在半导体衬底上的存储器部分，并且包括具有可存储半导体衬底和存储电极之间的电荷的ONO膜的第一晶体管和用于隔离第一晶体管的第一STI区域和形成在半导体衬底并且包括具有CMOS电极和栅极电介质的第二晶体管和用于隔离第二晶体管的第二STI区域。第一STI区域的顶表面的高度被设定为等于或小于第二STI区域的顶表面的高度。

86. 发明授权

US07598589B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07598589B2
公开(公告)日：2009-10-06
申请号：US11152114
申请日：2005-06-15
申请人： Nobuyoshi Takahashi , Satoshi Iwamoto , Fumihiko Noro , Masatoshi Arai
发明人： Nobuyoshi Takahashi , Satoshi Iwamoto , Fumihiko Noro , Masatoshi Arai
IPC分类号： H01L27/105
CPC分类号： H01L27/11568 , H01L21/823878 , H01L27/105 , H01L27/1052 , H01L27/11573 , H01L29/792 , Y10S438/954
摘要： A semiconductor device includes a memory section formed at a semiconductor substrate and including a first transistor having an ONO film that can store charges between the semiconductor substrate and a memory electrode and a first STI region for isolating the first transistor, and a CMOS section formed at the semiconductor substrate and including a second transistor having a CMOS electrode and a gate dielectric and a second STI region for isolating the second transistor. The height of the top surface of the first STI region is set equal to or smaller than the height of the top surface of the second STI region.
摘要翻译：一种半导体器件包括形成在半导体衬底上的存储器部分，并且包括具有可存储半导体衬底和存储电极之间的电荷的ONO膜的第一晶体管和用于隔离第一晶体管的第一STI区域和形成在半导体衬底并且包括具有CMOS电极和栅极电介质的第二晶体管和用于隔离第二晶体管的第二STI区域。第一STI区域的顶表面的高度被设定为等于或小于第二STI区域的顶表面的高度。

87. 发明申请

US20070225433A1 Curable silicone composition 审中-公开
标题翻译：可固化硅酮组合物
公开(公告)号：US20070225433A1
公开(公告)日：2007-09-27
申请号：US11723897
申请日：2007-03-22
申请人： Masatoshi Arai
发明人： Masatoshi Arai
IPC分类号： C08L83/04 , C08G77/00
CPC分类号： C08G77/50 , C08G77/12 , C08G77/20 , C08L83/04 , C08L83/00
摘要： A composition comprising (A) a cyclopolysiloxane represented by the following formula (1) having a norbornenyl group and/or a vinyl group each bonded to a silicon atom, (B) a polycyclopolysiloxane comprising a cyclopolysiloxane unit represented by the following formula (2) (C) a cyclopolysiloxane represented by the following formula (3) having two SiH bonds and (D) an addition reaction catalyst. The composition forms a cured product which is flexible and resistant to heat and organic solvents and is suitable as a binder resin for powder.
摘要翻译：一种组合物，其包含（A）由下式（1）表示的具有降冰片烯基和/或各自键合到硅原子上的乙烯基的环聚硅氧烷，（B）包含由下式（2）表示的环聚硅氧烷单元的聚环氧硅氧烷，（C）由具有两个SiH键的下式（3）表示的环聚硅氧烷和（D）加成反应催化剂。该组合物形成柔软且耐热和有机溶剂的固化产物，并且适合作为粉末的粘合剂树脂。

88. 发明授权

US07200382B2 Advertisement presenting and charging system 失效
标题翻译：广告呈报和收费系统
公开(公告)号：US07200382B2
公开(公告)日：2007-04-03
申请号：US10771443
申请日：2004-02-05
申请人： Masatoshi Arai
发明人： Masatoshi Arai
IPC分类号： G08G1/00 , H04M11/00
CPC分类号： G07B15/063 , G06Q30/0242 , G06Q30/0267 , G06Q30/0273 , G09F21/04
摘要： An advertisement presenting and charging system includes an instrument C/U and a navigator provided in a motor vehicle, and a display device obtaining information from the instrument C/U and the navigator. The display device is connected to a timer detecting time and an operation switch for changeover between operation and non-operation of the display device. The display device is connected to an ETC unit and an ETC antenna, so that a plurality of advertisement data are sent to the display device when the display device communicates with an ETC fixed station. The ETC fixed station sends an entrance data including an advertisement data to the display device, and the display device sends an exit data including a traveling section, a traveling time, a traveling distance to the ETC fixed station.
摘要翻译：广告呈现和收费系统包括设置在机动车辆中的仪器C / U和导航器，以及从仪器C / U和导航器获取信息的显示装置。显示装置连接到定时器检测时间和用于在显示装置的操作和不操作之间切换的操作开关。显示设备连接到ETC单元和ETC天线，使得当显示设备与ETC固定站通信时，多个广告数据被发送到显示设备。 ETC固定站向显示装置发送包括广告数据的入口数据，并且显示装置发送包括行驶部分，行驶时间，到ETC固定站的行驶距离的出口数据。

89. 发明申请

US20070073025A1 Curable silicone composition 有权
标题翻译：可固化硅酮组合物
公开(公告)号：US20070073025A1
公开(公告)日：2007-03-29
申请号：US11519088
申请日：2006-09-12
申请人： Masatoshi Arai
发明人： Masatoshi Arai
IPC分类号： C08G77/12 , C08G77/20
CPC分类号： C08G77/50 , C08G77/12 , C08G77/20 , C08L83/04 , C08L83/00
摘要： A composition comprising (A) polycycloolefin-functional polysiloxane represented by the following average compositional formula (1) wherein R1 is a monovalent organic group which does not have an unsaturated bond and may be different from each other, k is the number of 0 or larger, n is the number of from 0.01 to less than 4, m is the number of from 0 to less than 4, provided that the sum of m and n is larger than 0 and less than 4, (B) a siloxane having an SiH bond represented by the following average compositional formula (2) in such an amount that a molar ratio of the SiH bond to the unsaturated bond in the component (A) ranges from 0.1 to 10, HSiR2aO(4-a)/2 (2) wherein R2 is a monovalent organic group and a is the number larger than 0 and less than 4, and (C) an addition reaction catalyst in a catalytic amount.
摘要翻译：一种组合物，其包含（A）由以下平均组成式（1）表示的聚环烯烃官能聚硅氧烷，其中R 1是不具有不饱和键且可以彼此不同的一价有机基团， k为0以上的数，n为0.01以上且小于4的数，m为0以上且小于4的数，只要m与n的和大于0且小于4，（B）具有以下平均组成式（2）表示的SiH键的硅氧烷，其量使得组分（A）中SiH键与不饱和键的摩尔比为0.1〜10，< -line-formula description =“In-line Formulas”end =“lead”？> HSiR <2> （4-a）/ 2 （2）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中R 2是一价有机基团，a是大于0的数，小于4，和（C）催化剂a中的加成反应催化剂安装。

90. 发明授权

US07157325B2 Method for fabricating semiconductor memory device 有权
标题翻译：半导体存储器件的制造方法
公开(公告)号：US07157325B2
公开(公告)日：2007-01-02
申请号：US10959984
申请日：2004-10-08
申请人： Masatoshi Arai
发明人： Masatoshi Arai
IPC分类号： H01L21/32
CPC分类号： H01L27/11568 , H01L27/105 , H01L27/11526 , H01L27/11539 , Y10S438/961
摘要： A method for fabricating a semiconductor memory device in which a logic circuit and a nonvolatile memory are provided on a semiconductor substrate includes the steps of: forming an isolation region; forming a protective film made of an insulating material over the semiconductor substrate in a logic circuit region and a nonvolatile memory region; selectively introducing impurity ions in part of the semiconductor substrate in the logic circuit region; and removing the protective film formed over the logic circuit region. The step of introducing the impurity ions is performed before the step of removing the protective film is performed.
摘要翻译：一种用于制造半导体存储器件的方法，其中在半导体衬底上设置有逻辑电路和非易失性存储器包括以下步骤：形成隔离区; 在逻辑电路区域和非易失性存储区域中在半导体衬底上形成由绝缘材料制成的保护膜; 在半导体衬底的一部分中选择性地将杂质离子引入到逻辑电路区域中; 以及去除在逻辑电路区域上形成的保护膜。引入杂质离子的步骤是在除去保护膜的步骤之前进行的。

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