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81. 发明授权

US07589464B2 Nanotip electrode electroluminescence device with contoured phosphor layer 失效
标题翻译：具有成像荧光粉层的纳米技术电极电致发光器件
公开(公告)号：US07589464B2
公开(公告)日：2009-09-15
申请号：US11070051
申请日：2005-03-01
申请人： John F. Conley, Jr. , David R. Evans , Wei Gao , Yoshi Ono
发明人： John F. Conley, Jr. , David R. Evans , Wei Gao , Yoshi Ono
IPC分类号： H05B33/26
CPC分类号： H05B33/10 , B82Y20/00 , C09K11/54 , C09K11/642 , H01L33/18 , H05B33/14
摘要： A device and a fabrication method are provided for an EL device with a nanotip-contoured phosphor layer. The method comprises: forming a bottom electrode with nanotips; forming a phosphor layer overlying the bottom electrode, having irregularly-shaped top and bottom surfaces; and, forming a top electrode overlying the phosphor layer. The bottom electrode top surface has a nanotip contour, and the phosphor layer irregularly-shaped top and bottom surfaces have contours approximately matching the bottom electrode top surface nanotip contour. In one aspect, a contoured bottom dielectric is interposed between the bottom electrode and the phosphor layer, having top and bottoms surfaces with contours approximately matching the nanotip contour. Likewise, a top dielectric may be interposed between the top electrode and the phosphor layer, having a bottom surface with a contour approximately matching the contour of phosphor layer top surface.
摘要翻译：提供了一种具有纳米尺度荧光体层的EL器件的器件和制造方法。该方法包括：形成具有纳米尖端的底部电极; 形成覆盖在底部电极上的荧光体层，具有不规则形状的顶部和底部表面; 并且形成覆盖磷光体层的顶部电极。底部电极顶表面具有纳米尖端轮廓，并且荧光体层不规则形状的顶表面和底表面具有与底部电极顶表面纳米尖端轮廓近似匹配的轮廓。在一个方面，在底部电极和荧光体层之间插入有轮廓的底部电介质，其具有顶部和底部表面，轮廓几乎与纳米尖端轮廓相匹配。类似地，顶部电介质可以插入在顶部电极和荧光体层之间，具有大致与荧光体层顶表面的轮廓相匹配的轮廓的底面。

82. 发明授权

US06472337B1 Precursors for zirconium and hafnium oxide thin film deposition 有权
标题翻译：锆和氧化铪薄膜沉积的前体
公开(公告)号：US06472337B1
公开(公告)日：2002-10-29
申请号：US10020471
申请日：2001-10-30
申请人： Wei-Wei Zhuang , David R. Evans
发明人： Wei-Wei Zhuang , David R. Evans
IPC分类号： H01L2131
CPC分类号： H01L21/31625 , C01G25/02 , C01G27/02 , C07F7/003 , C23C16/405 , H01L21/02181 , H01L21/02189 , H01L21/02271 , H01L21/0228 , H01L21/3141
摘要： A method of making a precursor for a thin film formed by chemical vapor deposition processes, includes mixing ZCl4 with H(tmhd)3 solvent and benzene to form a solution, where Z is an element taken from the group of elements consisting of hafnium and zirconium; refluxing the solution for twelve hours in an argon atmosphere; removing the solvents via vacuum, thereby producing a solid compound; and sublimating the compound at 200° C. in a near vacuum of 0.1 mmHg. A ZOx precursor, for use in a chemical vapor deposition process, includes a Z-containing compound taken from the group of compounds consisting of ZCl(tmhd)3 and ZCl2(tmhd)2.
摘要翻译：通过化学气相沉积法制备薄膜前体的方法包括将ZCl4与H（tmhd）3溶剂和苯混合形成溶液，其中Z是从由铪和锆组成的元素组成的元素 ; 在氩气氛中回流12小时; 通过真空除去溶剂，从而产生固体化合物; 并在0.1mmHg的接近真空下在200℃升华该化合物。用于化学气相沉积方法的ZOx前体包括从ZCl（tmhd）3和ZCl 2（tmhd）2组成的化合物组中取代的含Z化合物。

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