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    • 84. 发明授权
    • Surface plasmon enhanced Raman spectroscopy
    • 表面等离子体增强拉曼光谱
    • US07397559B1
    • 2008-07-08
    • US11657424
    • 2007-01-23
    • Alexandre Bratkovski
    • Alexandre Bratkovski
    • G01J3/44G01N21/65
    • G01N21/658
    • An apparatus and related methods for spectroscopic analysis of analyte molecules is described. The analyte molecules are disposed near a metallic film that is positioned between a first medium on a first side and a second medium on a second side, the second medium being of higher refractive index than the first medium. A radiation source provides excitation radiation that propagates through the second medium toward the metallic film. The second medium and the metallic film are positioned in evanescent communication with respect to the excitation radiation, and the metallic film comprises lithographically patterned features designed to intensify surface plasmon resonance along the metallic film to promote the emission of Raman radiation from the analyte molecules. A radiation detector detects the Raman radiation emitted from the analyte molecules.
    • 描述了用于分析物分子的光谱分析的装置和相关方法。 分析物分子设置在位于第一侧的第一介质和第二侧的第二介质之间的金属膜附近,第二介质的折射率高于第一介质。 辐射源提供通过第二介质向金属膜传播的激发辐射。 第二介质和金属膜位于相对于激发辐射的ev逝连通中,并且金属膜包括设计成加强沿着金属膜的表面等离子体共振的光刻图案特征,以促进来自分析物分子的拉曼辐射的发射。 辐射检测器检测从分析物分子发射的拉曼辐射。
    • 90. 发明申请
    • Polarized radiation source using spin extraction/injection
    • 使用旋转萃取/注射的极化辐射源
    • US20060186432A1
    • 2006-08-24
    • US11061060
    • 2005-02-18
    • Viatcheslav OsipovAlexandre Bratkovski
    • Viatcheslav OsipovAlexandre Bratkovski
    • H01L33/00
    • H01L33/02H01L33/0004H01S5/04H01S5/32
    • Spin-polarized electrons can be efficiently extracted from an n-doped semiconductor layer (n-S) by forming a modified Schottky contact with a ferromagnetic material (FM) and a δ-doped layer at an interface under forward bias voltage conditions. Due to spin-selection property of the FM-S junction, spin-polarized carriers appear in the n-doped semiconductor layer near the FM-S interface. If a FM-n-n′-p heterostructure is formed, where the n′ region is a narrower gap semiconductor, polarized electrons from the n-S region and holes from the p-S region can diffuse into the n′-S region under the influence of independent voltages applied between the FM and n′ regions and the n′ and p regions. The polarized electrons and holes recombine in the n′-S region and produce polarized light. The polarization can be controlled and modulated by controlling the applied voltages.
    • 通过在正向偏压条件下在界面处形成与铁磁材料(FM)和δ掺杂层的改性肖特基接触,可以从n掺杂半导体层(n-S)有效地提取自旋极化电子。 由于FM-S结的自旋选择性质,自旋极化载流子出现在FM-S界面附近的n掺杂半导体层中。 如果形成FM-n-n'-p异质结构,其中n'区域是较窄的间隙半导体,则来自nS区域的极化电子和来自pS区域的空穴可以扩散到n'-S区域的影响下 在FM和n'区域以及n'和p区域之间施加独立电压。 极化的电子和空穴在n'-S区域复合并产生偏振光。 可以通过控制施加的电压来控制和调制极化。