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81. 发明授权

US5895225A Semiconductor light-emitting device and production method thereof 失效
公开(公告)号：US5895225A
公开(公告)日：1999-04-20
申请号：US978848
申请日：1997-11-26
申请人： Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Kiyoshi Ohnaka , Yuzaburo Ban , Minoru Kubo
发明人： Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Kiyoshi Ohnaka , Yuzaburo Ban , Minoru Kubo
IPC分类号： H01L33/00 , H01L33/02 , H01L33/06 , H01L33/32 , H01L33/36 , H01L33/64 , H01S5/02 , H01S5/022 , H01S5/024 , H01S5/042 , H01S5/16 , H01S5/20 , H01S5/223 , H01S5/30 , H01S5/323 , H01S5/327 , H01S3/02
CPC分类号： H01L33/642 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/81 , H01L33/007 , H01L33/025 , H01L33/32 , H01L33/325 , H01S5/2231 , H01S5/305 , H01S5/32341 , H01S5/327 , H01L2224/73204 , H01L2224/83192 , H01L2933/0075 , H01S5/0213 , H01S5/02236 , H01S5/0224 , H01S5/02272 , H01S5/0422 , H01S5/162 , H01S5/2059 , H01S5/2063 , H01S5/3063 , H01S5/3086
摘要： A semiconductor light-emitting device with a double hetero structure, including: an active layer made of Ga.sub.1-x In.sub.x N (0.ltoreq.x.ltoreq.0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so as to sandwich the active layer.

82. 发明授权

US08018134B2 Light source, optical pickup, and electronic apparatus 有权
标题翻译：光源，光学拾取器和电子设备
公开(公告)号：US08018134B2
公开(公告)日：2011-09-13
申请号：US12137894
申请日：2008-06-12
申请人： Isao Kidoguchi , Yasuo Kitaoka , Hiroyoshi Yajima , Keiji Ito , Akihiko Ishibashi , Yoshiaki Hasegawa , Kiminori Mizuuchi
发明人： Isao Kidoguchi , Yasuo Kitaoka , Hiroyoshi Yajima , Keiji Ito , Akihiko Ishibashi , Yoshiaki Hasegawa , Kiminori Mizuuchi
IPC分类号： H01J1/62
CPC分类号： H01S5/02204 , H01S5/02212 , H01S5/02296
摘要： A light source of the present invention includes: a semiconductor light emitting device which has a light emitting face and emits light from part of the light emitting face; a container which has a light transmitting window for transmitting the light and accommodates the semiconductor light emitting device; and a gettering portion for performing gettering of a material containing at least one of carbon and silicon. The gettering portion is positioned, in the container, in a region other than the part of the light emitting face of the semiconductor light emitting device.
摘要翻译：本发明的光源包括：具有发光面并从发光面的一部分发光的半导体发光器件; 容器，其具有用于传输光的透光窗并容纳半导体发光器件; 以及用于吸收含有至少一种碳和硅的材料的吸气部分。吸气部位于容器内，位于半导体发光元件的发光面以外的区域。

83. 发明授权

US07839911B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US07839911B2
公开(公告)日：2010-11-23
申请号：US12298258
申请日：2007-06-19
申请人： Tomoya Satoh , Toru Takayama , Koichi Hayakawa , Isao Kidoguchi
发明人： Tomoya Satoh , Toru Takayama , Koichi Hayakawa , Isao Kidoguchi
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0202 , H01S5/0287 , H01S5/1014 , H01S5/1039 , H01S5/221 , H01S5/34326 , H01S5/3436 , H01S2301/18
摘要： A semiconductor laser device 100 having a ridge stripe structure comprises: an n-type clad layer 105 having a protrusion; and an n-type current block layer 107 covering the clad layer, except the upper surface of the protrusion. When the width of the upper surface is W, the distance between front and rear cleavage planes is L, the width of the upper surface at the front cleavage plane is Wf, and the width of the upper surface at the rear cleavage is Wr. In a range where a distance from the front cleavage plane is shorter than or equal to L/2, an area Sc of the upper surface is in a range of L/8×(3Wf+Wr)
摘要翻译：具有脊条状结构的半导体激光装置100包括：具有突起的n型覆盖层105; 以及覆盖包层的n型电流阻挡层107，除了突起的上表面以外。当上表面的宽度为W时，前后解理面之间的距离为L，前解理面上表面的宽度为Wf，后裂纹的上表面的宽度为Wr。在与前解体面的距离小于或等于L / 2的范围内，上表面的面积Sc在L / 8×（3Wf + Wr）

84. 发明授权

US07729401B2 Semiconductor laser device and fabrication method for the same 有权
标题翻译：半导体激光器件及其制造方法相同
公开(公告)号：US07729401B2
公开(公告)日：2010-06-01
申请号：US12167559
申请日：2008-07-03
申请人： Toru Takayama , Tomoya Sato , Isao Kidoguchi
发明人： Toru Takayama , Tomoya Sato , Isao Kidoguchi
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0287 , H01S5/0655 , H01S5/1039 , H01S5/1064 , H01S5/162 , H01S5/2214 , H01S5/2216 , H01S5/2218 , H01S5/34326
摘要： The semiconductor laser device includes a cavity structure having a first clad layer, an active layer and a second clad layer formed on a substrate. The second clad layer has a stripe portion extending between the front end face from which laser light is extracted and the rear end face opposite to the front end face. The stripe portion has a first region located closer to the front end face, a second region located closer to the rear end face and a change region whose width changes located between the first and second regions. The effective refractive index difference between the inside and outside of the stripe portion in the change region is greater than that in the first region.
摘要翻译：半导体激光器件包括具有形成在衬底上的第一覆盖层，有源层和第二覆盖层的空腔结构。所述第二包层具有在从所述前端面和所述前端面相反的所述前端面之间延伸出的条纹部分。条状部分具有位于更靠近前端面的第一区域，位于更靠近后端面的第二区域和宽度在第一和第二区域之间变化的变化区域。变化区域中的条状部分的内部和外部之间的有效折射率差大于第一区域中的有效折射率差。

85. 发明授权

US07704759B2 Semiconductor laser device and method for fabricating the same 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07704759B2
公开(公告)日：2010-04-27
申请号：US12208833
申请日：2008-09-11
申请人： Toru Takayama , Satoshi Murasawa , Yasuhiro Fujimoto , Hisashi Nakayama , Isao Kidoguchi
发明人： Toru Takayama , Satoshi Murasawa , Yasuhiro Fujimoto , Hisashi Nakayama , Isao Kidoguchi
IPC分类号： H01L21/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0655 , H01S5/0658 , H01S5/209 , H01S5/2219 , H01S5/3202 , H01S5/3211 , H01S5/34313 , H01S5/34326 , H01S5/4087
摘要： In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements.
摘要翻译：在半导体激光器件中，将发射不同波长的光的多个发光元件集成在基板上。每个发光元件在基板上包括分别设置在有源层的顶部和底部上的有源层和包覆层。设置在有源层顶部的包层之一是具有台面脊部的上包层。用于形成脊部的蚀刻停止层插入在上部包层的脊部与另一部分之间。蚀刻阻挡层的厚度在发光元件之间变化。

86. 发明授权

US07564884B1 Ridge-stripe semiconductor laser 失效
标题翻译：脊条半导体激光器
公开(公告)号：US07564884B1
公开(公告)日：2009-07-21
申请号：US11524277
申请日：2006-09-21
申请人： Keiji Ito , Isao Kidoguchi , Hiroyoshi Yajima
发明人： Keiji Ito , Isao Kidoguchi , Hiroyoshi Yajima
IPC分类号： H01S5/00
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/0287 , H01S5/0425 , H01S5/16 , H01S5/2214 , H01S5/34333
摘要： A laminated composite includes: a 1st-conductive-type cladding layer laid on a substrate; an active layer laid on the 1st-conductive-type cladding layer; and a ridge-stripe 2nd-conductive-type cladding layer laid on the active layer. A pair of films is disposed at the end faces of the laminated composite so as to oppose each other along the lamination direction. The paired films are formed to have different spectral reflectances from each other. The resonator structure is formed with the laminated composite and the paired films. When, in the length direction of the resonator, a side with one of the paired films which has a smaller spectral reflectance is the forward side and a side with the other film having a larger spectral reflectance is the backward side, the laminated composite is structured so that the optical confinement factor becomes smaller on the forward side than on the backward side.
摘要翻译：层压复合体包括：第一导电型包覆层，其设置在基板上; 位于第1导电型包覆层上的有源层; 和设置在有源层上的脊条第二导电型覆层。一层薄膜配置在叠层复合材料的端面上，以沿层叠方向彼此相对。成对的膜被形成为具有彼此不同的光谱反射率。谐振器结构由层压复合材料和成对薄膜形成。当在谐振器的长度方向上，具有较小光谱反射率的成对膜中的一个的一侧是前侧，并且具有较大光谱反射率的另一个膜的一侧为后侧时，层叠复合体的结构使得光学约束因子在前侧比在后侧变小。

87. 发明授权

US07435295B2 Method for producing compound single crystal and production apparatus for use therein 有权
标题翻译：复合单晶的制造方法及其制造装置
公开(公告)号：US07435295B2
公开(公告)日：2008-10-14
申请号：US10598095
申请日：2005-02-18
申请人： Yasuo Kitaoka , Hisashi Minemoto , Isao Kidoguchi , Yasuhito Takahashi , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Yasuo Kitaoka , Hisashi Minemoto , Isao Kidoguchi , Yasuhito Takahashi , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： C30B25/12
CPC分类号： C30B29/406 , C30B9/10 , C30B19/02 , C30B19/063 , C30B19/064 , Y10T117/1016
摘要： The present invention provides a method for producing a compound single crystal that can improve a growth rate and grow a large single crystal with high crystal uniformity in a short time, and a production apparatus used for the method. The compound single crystal is grown while stirring a material solution to create a flow from a gas-liquid interface in contact with a source gas toward the inside of the material solution. With this stirring, the source gas can be dissolved easily in the material solution, and supersaturation can be achieved in a short time, thus improving the growth rate of the compound single crystal. Moreover, the flow formed by the stirring goes from the gas-liquid interface where a source gas concentration is high to the inside of the material solution where the source gas concentration is low, so that dissolution of the source gas becomes uniform. Accordingly, it is possible not only to suppress nonuniform nucleation at the gas-liquid interface, but also to improve the quality of the compound single crystal produced.
摘要翻译：本发明提供了一种能够在短时间内提高生长速度和生长具有高结晶均匀性的大单晶的化合物单晶的制造方法和用于该方法的制造装置。在搅拌材料溶液的同时培养复合单晶以产生与源气体接触的气液界面朝向材料溶液内部的流动。通过该搅拌，能够将源气体容易地溶解在原料溶液中，可以在短时间内实现过饱和，从而提高复合单晶的生长速度。此外，通过搅拌形成的流动源于源气体浓度高的气液界面到源气体浓度低的材料溶液的内部，使得源气体的溶解变得均匀。因此，不仅可以抑制气液界面的不均匀成核，而且可以提高制造的复合单晶的质量。

88. 发明授权

US07426227B2 Semiconductor laser device, optical disk apparatus and optical integrated unit 有权
标题翻译：半导体激光器件，光盘设备和光学集成单元
公开(公告)号：US07426227B2
公开(公告)日：2008-09-16
申请号：US11447951
申请日：2006-06-07
申请人： Masahiro Kume , Isao Kidoguchi , Yuzaburo Ban , Ryoko Miyanaga , Masakatsu Suzuki
发明人： Masahiro Kume , Isao Kidoguchi , Yuzaburo Ban , Ryoko Miyanaga , Masakatsu Suzuki
IPC分类号： H01S5/00
CPC分类号： H01S5/32341 , B82Y20/00 , G11B7/123 , G11B7/127 , H01L2224/16225 , H01S5/005 , H01S5/0213 , H01S5/02208 , H01S5/02212 , H01S5/0224 , H01S5/02272 , H01S5/02292 , H01S5/0286 , H01S5/0683 , H01S5/1078 , H01S5/2022 , H01S5/2027 , H01S5/22 , H01S5/34333 , H01S2301/02 , H01S2301/173 , H01S2301/176 , H01S2304/04
摘要： A semiconductor laser device includes: a first cladding layer, which is made of a nitride semiconductor of a first conductivity type and is formed over a substrate; an active layer, which is made of another nitride semiconductor and is formed over the first cladding layer; and a second cladding layer, which is made of still another nitride semiconductor of a second conductivity type and is formed over the active layer. A spontaneous-emission-absorbing layer, which is made of yet another nitride semiconductor of the first conductivity type and has such an energy gap as absorbing spontaneous emission that has been radiated from the active layer, is formed between the substrate and the first cladding layer.
摘要翻译：半导体激光器件包括：第一覆层，其由第一导电类型的氮化物半导体制成并形成在衬底上; 活性层，其由另一个氮化物半导体制成并形成在第一包层上; 以及第二覆层，其由另一种第二导电类型的氮化物半导体制成并形成在有源层上。由第一导电类型的又一个氮化物半导体制成并具有从有源层辐射的吸收自发发射的能隙的自发发射吸收层形成在衬底和第一覆层之间。

89. 发明授权

US07418019B2 Multi-wavelength semiconductor laser 有权
标题翻译：多波长半导体激光器
公开(公告)号：US07418019B2
公开(公告)日：2008-08-26
申请号：US11501064
申请日：2006-08-09
申请人： Toru Takayama , Isao Kidoguchi , Takayuki Kashima
发明人： Toru Takayama , Isao Kidoguchi , Takayuki Kashima
IPC分类号： H01S5/00
CPC分类号： H01S5/40 , H01S5/162 , H01S5/22 , H01S5/4087
摘要： Semiconductor lasers for respective wavelengths have window regions with different lengths so as to obtain optimum FFPs for emitted light of the respective wavelengths, and thus dependence on optical output can be equal between the wavelengths, facilitating the design of an optical system.
摘要翻译：用于各波长的半导体激光器具有不同长度的窗口区域，以获得用于各个波长的发射光的最佳FFP，因此对波长的依赖性可以相等于波长，从而有助于光学系统的设计。

90. 发明申请

US20080198887A1 Semiconductor laser device and method of fabricating the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20080198887A1
公开(公告)日：2008-08-21
申请号：US11907016
申请日：2007-10-09
申请人： Yasuhiro Fujimoto , Toru Takayama , Isao Kidoguchi
发明人： Yasuhiro Fujimoto , Toru Takayama , Isao Kidoguchi
IPC分类号： H01S5/22 , H01L33/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/1039 , H01S5/162 , H01S5/222 , H01S5/34313 , H01S5/34326 , H01S5/4087
摘要： A semiconductor laser device includes a first cavity and a second cavity formed apart from each other over a semiconductor substrate. The first cavity includes a first buffer layer and a first semiconductor layer including a first active layer, and the second cavity includes a second buffer layer and a second semiconductor layer including a second active layer. A window structure is provided in a region near an end face of each of the first semiconductor layer and the second semiconductor layer. A band gap of the first buffer layer is greater than that of the first active layer, and a band gap of the second buffer layer is greater than that of the second active layer.
摘要翻译：半导体激光器件包括在半导体衬底上彼此分开形成的第一腔和第二腔。第一腔包括第一缓冲层和包括第一有源层的第一半导体层，第二腔包括第二缓冲层和包括第二有源层的第二半导体层。在第一半导体层和第二半导体层的端面附近的区域设置有窗口结构。第一缓冲层的带隙大于第一缓冲层的带隙，第二缓冲层的带隙大于第二有源层的带隙。

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