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81. 发明授权

US08125023B2 Vertical type power semiconductor device having a super junction structure 有权
标题翻译：具有超结结构的垂直型功率半导体器件
公开(公告)号：US08125023B2
公开(公告)日：2012-02-28
申请号：US12620045
申请日：2009-11-17
申请人： Hiroshi Ohta , Wataru Saito , Syotaro Ono , Munehisa Yabuzaki , Nana Hatano , Miho Watanabe
发明人： Hiroshi Ohta , Wataru Saito , Syotaro Ono , Munehisa Yabuzaki , Nana Hatano , Miho Watanabe
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/0638 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/402 , H01L29/41741 , H01L29/7395 , H01L29/7811 , Y10S257/901
摘要： In a vertical power semiconductor device having the super junction structure both in a device section and a terminal section, an n-type impurity layer is formed on the outer peripheral surface in the super junction structure. This allows an electric field on the outer peripheral surface of the super junction structure region to be reduced. Accordingly, a reliable vertical power semiconductor device of a high withstand voltage can be provided.
摘要翻译：在器件部分和端子部分都具有超结结构的垂直功率半导体器件中，在超结结构的外周表面上形成n型杂质层。这允许减小超结结构区域的外周表面上的电场。因此，可以提供高耐受电压的可靠的垂直功率半导体器件。

82. 发明申请

US20120015402A1 Method of Proliferating Plasma Cells 失效
标题翻译：增殖血浆细胞的方法
公开(公告)号：US20120015402A1
公开(公告)日：2012-01-19
申请号：US13187677
申请日：2011-07-21
申请人： Masayuki Tsuchiya , Masami Suzuki , Kenji Yoshida , Etsuko Fujii , Miho Watanabe , Koichi Matsubara , Yu Jau Chen , Juliana Sim
发明人： Masayuki Tsuchiya , Masami Suzuki , Kenji Yoshida , Etsuko Fujii , Miho Watanabe , Koichi Matsubara , Yu Jau Chen , Juliana Sim
IPC分类号： C12P21/00 , C12N5/071
CPC分类号： A01K67/027 , A01K2267/01 , A61K35/16 , C07K16/00 , C07K16/30
摘要： An objective of the present invention is to facilitate the acquisition of antibody-producing cells that are infiltrating virus-infected cells, cancer cells, abnormal cells forming a benign hyperplasia, and the like, and to improve the efficiency of the production of antibodies as well as nucleic acids encoding them from the antibody-producing cells.The present inventors discovered that, when cancer tissues comprising infiltrating lymphocytes are transplanted into highly immunodeficient animals that do not have T cells, B cells, and NK cells and further exhibit a low IFN production ability, the differentiation and proliferation of infiltrating lymphocytes are unexpectedly promoted, and the number of plasma cells that produce antibodies recognizing cancer tissues increases dramatically, plasma cells can be separated easily, and antibodies or nucleic acids encoding them can be easily prepared from the plasma cells.
摘要翻译：本发明的目的是便于获得渗透病毒感染细胞的抗体产生细胞，癌细胞，形成良性增生的异常细胞等，以及提高抗体生产的效率作为从抗体产生细胞编码它们的核酸。本发明人发现，当将包含浸润性淋巴细胞的癌组织移植到不具有T细胞，B细胞和NK细胞的高度免疫缺陷的动物中并且进一步表现出低的IFN产生能力时，意外地促进了浸润性淋巴细胞的分化和增殖并且产生识别癌组织的抗体的浆细胞的数量急剧增加，可以容易地分离浆细胞，并且可以容易地从浆细胞制备抗体或编码它们的核酸。

83. 发明授权

US08030706B2 Power semiconductor device 失效
标题翻译：功率半导体器件
公开(公告)号：US08030706B2
公开(公告)日：2011-10-04
申请号：US12540192
申请日：2009-08-12
申请人： Miho Watanabe , Masaru Izumisawa , Yasuto Sumi , Hiroshi Ohta , Wataru Sekine , Wataru Saito , Syotaro Ono , Nana Hatano
发明人： Miho Watanabe , Masaru Izumisawa , Yasuto Sumi , Hiroshi Ohta , Wataru Sekine , Wataru Saito , Syotaro Ono , Nana Hatano
IPC分类号： H01L29/66
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/1095 , H01L29/7802
摘要： A semiconductor device according to an embodiment of the present invention includes a device part and a terminal part. The device includes a first semiconductor layer, and second and third semiconductor layers formed on the first semiconductor layer, and alternately arranged along a direction parallel to a surface of the first semiconductor layer, wherein the device part is provided with a first region and a second region, each of which includes at least one of the second semiconductor layers and at least one of the third semiconductor layers, and with regard to a difference value ΔN (=NA−NB) obtained by subtracting an impurity amount NB per unit length of each of the third semiconductor layers from an impurity amount NA per unit length of each of the second semiconductor layers, a difference value ΔNC1 which is the difference value ΔN in the first region of the device part, a difference value ΔNC2 which is the difference value ΔN in the second region of the device part, and a difference value ΔNT which is the difference value ΔN in the terminal part satisfy a relationship of ΔNC1>ΔNT>ΔNC2.
摘要翻译：根据本发明实施例的半导体器件包括器件部分和端子部分。该器件包括第一半导体层，以及形成在第一半导体层上的第二和第三半导体层，并且沿着与第一半导体层的表面平行的方向交替布置，其中器件部分设置有第一区域和第二半导体层区域，其中每一个包括第二半导体层和至少一个第三半导体层中的至少一个，并且关于通过从每单位长度减去杂质量NB获得的差值Dgr; N（= NA-NB）从每个第二半导体层的每单位长度的杂质量NA中的每个第三半导体层的差分值＆Dgr; NC1，其是器件部分的第一区域中的差值＆Dgr; N，差值＆Dgr ;作为装置部分的第二区域中的差值Dgr; N的NC2，作为终端部分中的差值Dgr; N的差值＆Dgr; NT满足关系的＆Dgr; NC1>＆Dgr; NT>＆Dgr; NC2。

84. 发明申请

US20110227154A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110227154A1
公开(公告)日：2011-09-22
申请号：US13052032
申请日：2011-03-18
申请人： Syotaro ONO , Wataru Saito , Munehisa Yabuzaki , Shunji Taniuchi , Miho Watanabe
发明人： Syotaro ONO , Wataru Saito , Munehisa Yabuzaki , Shunji Taniuchi , Miho Watanabe
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/66712
摘要： A semiconductor device comprising: a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type formed on the first semiconductor layer; a first buried layer of the first conductivity type selectively formed in the second semiconductor layer and having a first peak impurity concentration at a first depth; a second buried layer of a second conductivity type selectively formed in the second semiconductor layer and having a second peak impurity concentration at a second depth; a base layer of the second conductivity type selectively formed in the second semiconductor layer and overlapping with an upper portion of the second buried layer; a source layer of the first conductivity type selectively formed in the base layer; and a gate electrode formed on the base layer and on the second semiconductor layer above the first buried layer with a gate insulating film being interposed therebetween.
摘要翻译：一种半导体器件，包括：第一导电类型的第一半导体层; 形成在第一半导体层上的第一导电类型的第二半导体层; 第一导电类型的第一掩埋层选择性地形成在第二半导体层中，并且在第一深度处具有第一峰值杂质浓度; 第二导电类型的第二掩埋层选择性地形成在第二半导体层中，并且在第二深度具有第二峰值杂质浓度; 第二导电类型的基极层选择性地形成在第二半导体层中并与第二掩埋层的上部重叠; 选择性地形成在所述基底层中的所述第一导电类型的源极层; 以及形成在所述第一掩埋层上的所述基极层和所述第二半导体层上的栅电极，其间插入有栅极绝缘膜。

85. 发明申请

US20110215418A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110215418A1
公开(公告)日：2011-09-08
申请号：US13029925
申请日：2011-02-17
申请人： Wataru SAITO , Syotaro Ono , Munehisa Yabuzaki , Shunji Taniuchi , Miho Watanabe
发明人： Wataru SAITO , Syotaro Ono , Munehisa Yabuzaki , Shunji Taniuchi , Miho Watanabe
IPC分类号： H01L27/07 , H01L29/72
CPC分类号： H01L27/07 , H01L29/72
摘要： According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, a first main electrode, a third semiconductor region of a second conductivity type, a second main electrode, and a plurality of embedded semiconductor regions of the second conductivity type. The second semiconductor region is formed on a first major surface of the first semiconductor region. The first main electrode is formed on a face side opposite to the first major surface of the first semiconductor region. The third semiconductor region is formed on a second major surface of the second semiconductor region on a side opposite to the first semiconductor region. The second main electrode is formed to bond to the third semiconductor region. The embedded semiconductor regions are provided in a termination region. A distance between the embedded semiconductor region and the second major surface along a direction from the second major surface toward the first major surface becomes longer toward outside from the device region.
摘要翻译：根据一个实施例，半导体器件包括第一导电类型的第一半导体区域，第一导电类型的第二半导体区域，第一主电极，第二导电类型的第三半导体区域，第二主电极和多个第二导电类型的嵌入式半导体区域。第二半导体区域形成在第一半导体区域的第一主表面上。第一主电极形成在与第一半导体区域的第一主表面相对的正面上。第三半导体区域形成在第二半导体区域的与第一半导体区域相对的一侧的第二主表面上。第二主电极形成为结合到第三半导体区域。嵌入式半导体区域设置在终端区域中。沿着从第二主表面朝向第一主表面的方向在嵌入式半导体区域和第二主表面之间的距离从器件区域向外部变长。

86. 发明授权

US07576172B2 Method of preparing aliphatic polymer having ketone group in main chain thereof and method of preparing composition containing the same 失效
标题翻译：制备主链中具有酮基的脂族聚合物的方法及其制备方法
公开(公告)号：US07576172B2
公开(公告)日：2009-08-18
申请号：US10568428
申请日：2004-04-30
申请人： Taishi Shigematsu , Chikara Manabe , Masaki Hirakata , Kentaro Kishi , Miho Watanabe , Hiroyuki Watanabe
发明人： Taishi Shigematsu , Chikara Manabe , Masaki Hirakata , Kentaro Kishi , Miho Watanabe , Hiroyuki Watanabe
IPC分类号： C08G65/34 , C08G2/00 , C08G4/00 , C08G6/00 , C08G10/00 , C08G12/00 , C08G14/00 , C08G16/00 , C23C14/12 , C23C14/10 , C08K3/00 , H01B1/12 , B60C1/00 , C08K3/04
CPC分类号： C08G65/34 , B82Y30/00 , C08G65/00 , C08G65/48
摘要： The present invention discloses a method of synthesizing an aliphatic polymer having a ketone group in the main chain thereof, in which polyhydric alcohol (for example, glycerin) as a raw material is polymerized in the presence of a catalyst, and a method of preparing a composition containing an aliphatic polymer having a ketone group in the main chain thereof, including such a process.
摘要翻译：本发明公开了在催化剂存在下，使主链中含有作为原料的多元醇（例如甘油）聚合的主链中的具有酮基的脂肪族聚合物的合成方法，包含其主链中具有酮基的脂肪族聚合物的组合物，包括这种方法。

87. 发明申请

US20080105544A1 Electrode for electrochemical measurement 失效
标题翻译：电极用于电化学测量
公开(公告)号：US20080105544A1
公开(公告)日：2008-05-08
申请号：US10863732
申请日：2004-06-09
申请人： Taishi Shigematsu , Miho Watanabe , Chikara Manabe , Hiroyuki Watanabe
发明人： Taishi Shigematsu , Miho Watanabe , Chikara Manabe , Hiroyuki Watanabe
IPC分类号： G01N27/26 , G01N27/30
CPC分类号： B82Y15/00 , B82Y30/00 , G01N27/308
摘要： The present invention provides an electrode for electrochemical measurement including a carbon nanotube, a catalyst causing a specific chemical reaction, and an insulator in which the carbon nanotube and the catalyst are embedded, wherein a part of the catalyst is exposed at the surface of the insulator and a part of the carbon nanotube is exposed at the surface of the insulator to form an electoconductive portion, or wherein a part of the catalyst is exposed at the surface of the insulator, and a part of the carbon nanotube is electrically connected to the exposed catalyst to form an electoconductive portion.
摘要翻译：本发明提供一种用于电化学测量的电极，包括碳纳米管，引起特定化学反应的催化剂，以及嵌入有碳纳米管和催化剂的绝缘体，其中一部分催化剂在绝缘体的表面露出并且所述碳纳米管的一部分在所述绝缘体的表面露出以形成电导体部分，或者其中所述催化剂的一部分在所述绝缘体的表面露出，并且所述碳纳米管的一部分与所述暴露的催化剂形成电导电部分。

88. 发明申请

US20060287470A1 Alphatic polymer having ketone group and ether bonding in its main chain, and resin composition 失效
标题翻译：在其主链中具有酮基和醚键的Alphatic聚合物和树脂组合物
公开(公告)号：US20060287470A1
公开(公告)日：2006-12-21
申请号：US10567907
申请日：2004-04-30
申请人： Taishi Shigematsu , Chikara Manabe , Masaki Hirakata , Kentaro Kishi , Miho Watanabe , Hiroyuki Watanabe
发明人： Taishi Shigematsu , Chikara Manabe , Masaki Hirakata , Kentaro Kishi , Miho Watanabe , Hiroyuki Watanabe
IPC分类号： C08G16/00
CPC分类号： C08G65/34 , B82Y30/00 , C08G65/48 , C08K3/08
摘要： The invention provides an aliphatic polymer having a ketone group and ether bonding in its main chain, characterized by comprising structural units represented by the Formula (1) and by the Formula (2). In the Formulae (1) and (2), Ra and Rb each independently represents a substituted or unsubstituted divalent aliphatic hydrocarbon group. Rc represents a substituted or unsubstituted divalent aliphatic hydrocarbon group having ether bonding in a terminal thereof, or a single bond. n1 represents an integer of 1 or more. n2 represents an integer of 0 or more. And, n1+n2 is in a range of 2 to 1000. The polymer preferably contains ether bonds and ketone groups in a ratio of 0.01 to 100. The polymer can be substantially comprised of a structural unit represented by the Formula (1) as a repeating unit. A resin composition containing as a component structural units represented by the Formula (1) is also provided. The resin composition may further comprise an electrically conductive powder.
摘要翻译：本发明提供了在其主链中具有酮基和醚键的脂族聚合物，其特征在于包括由式（1）和式（2）表示的结构单元。在式（1）和（2）中，Ra和Rb各自独立地表示取代或未取代的二价脂族烃基。 Rc表示在其末端具有醚键的取代或未取代的二价脂族烃基或单键。 n1表示1以上的整数。 n2表示0以上的整数。并且，n1 + n2在2〜1000的范围内。聚合物优选以0.01〜100的比例含有醚键和酮基。聚合物可以基本上由式（1）表示的结构单元作为重复单位。还提供了含有由式（1）表示的组分结构单元的树脂组合物。树脂组合物还可以包含导电粉末。

89. 发明申请

US20050212395A1 Electron beam generator device and method for producing the same 失效
标题翻译：电子束发生装置及其制造方法
公开(公告)号：US20050212395A1
公开(公告)日：2005-09-29
申请号：US10933296
申请日：2004-09-03
申请人： Kazunori Anazawa , Chikara Manabe , Kentaro Kishi , Taishi Shigematsu , Miho Watanabe , Masaki Hirakata , Takashi Isozaki , Hiroyuki Watanabe , Shigeki Ooma , Shinsuke Okada
发明人： Kazunori Anazawa , Chikara Manabe , Kentaro Kishi , Taishi Shigematsu , Miho Watanabe , Masaki Hirakata , Takashi Isozaki , Hiroyuki Watanabe , Shigeki Ooma , Shinsuke Okada
IPC分类号： H01J37/06 , H01J1/02 , H01J1/304 , H01J9/02 , H01J29/04 , H01J37/073
CPC分类号： H01J1/304 , B82Y10/00 , H01J1/3044 , H01J9/025 , H01J37/073 , H01J2201/30446 , H01J2201/30469 , H01J2329/00
摘要： An electron beam generator device includes a base body having a conductive surface and a electron-emission electrode having a carbon nanotube structure on the conductive surface of the substrate. The carbon nanotube structure constitutes a network structure which has plural carbon nanotubes and a crosslinked part including a chemical bond of plural functional groups. The chemical bond connects one end of one of the carbon nanotubes to another one of the carbon nanotubes. A method for producing an electron beam generator device, includes applying plural carbon nanotubes each having a functional group onto a conductive surface of a base body, and crosslinking the functional groups with a chemical bond to form a crosslinked part, thereby forming a carbon nanotube structure constituting a network structure having plural carbon nanotubes electrically connected to each other.
摘要翻译：电子束发生器装置包括具有导电表面的基体和在基底的导电表面上具有碳纳米管结构的电子发射电极。碳纳米管结构构成具有多个碳纳米管和包含多个官能团的化学键的交联部分的网络结构。化学键将一个碳纳米管的一端连接到另一个碳纳米管。一种电子束发生装置的制造方法，其特征在于，将具有官能团的多个碳纳米管涂布在基体的导电性表面上，并且通过化学键使所述官能团交联而形成交联部，由此形成碳纳米管结构体构成具有彼此电连接的多个碳纳米管的网络结构。

90. 发明申请

US20050069701A1 Carbon nanotube composite structure and method of manufacturing the same 审中-公开
标题翻译：碳纳米管复合结构及其制造方法
公开(公告)号：US20050069701A1
公开(公告)日：2005-03-31
申请号：US10771429
申请日：2004-02-05
申请人： Miho Watanabe , Chikara Manabe , Taishi Shigematsu , Kazunori Anazawa , Takashi Isozaki , Kentaro Kishi , Masaki Hirakata , Shigeki Ooma , Shinsuke Okada , Hiroyuki Watanabe
发明人： Miho Watanabe , Chikara Manabe , Taishi Shigematsu , Kazunori Anazawa , Takashi Isozaki , Kentaro Kishi , Masaki Hirakata , Shigeki Ooma , Shinsuke Okada , Hiroyuki Watanabe
IPC分类号： B82B1/00 , B82B3/00 , C01B31/02 , D02G3/00
CPC分类号： B82B3/00 , B82Y30/00 , B82Y40/00 , Y10T428/2913
摘要： Provided are a carbon nanotube structure more excellent in electric conductivity, thermal conductivity, and mechanical strength, and a method of manufacturing the carbon nanotube structure. A carbon nanotube composite structure is characterized by including: a first carbon nanotube structure in which functional groups bonded to plural carbon nanotubes are chemically bonded and mutually cross-linked to construct a network structure; and a second carbon nanotube structure in which functional groups bonded to plural carbon nanotubes are chemically bonded and mutually cross-linked to construct a network structure, the second carbon nanotube structure being combined with the network structure of the first carbon nanotube structure.
摘要翻译：提供了导电性，导热性和机械强度更优异的碳纳米管结构体以及碳纳米管结构体的制造方法。碳纳米管复合结构的特征在于包括：第一碳纳米管结构，其中键合到多个碳纳米管的官能团化学键合并相互交联以构建网络结构; 以及第二碳纳米管结构，其中与多个碳纳米管结合的官能团化学键合并相互交联以构建网络结构，所述第二碳纳米管结构与所述第一碳纳米管结构的网络结构组合。

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