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81. 发明专利

JP2008156142A Aluminum nitride sintered compact and method for manufacturing the same 审中-公开
标题翻译：硝酸铝烧结紧凑型及其制造方法
公开(公告)号：JP2008156142A
公开(公告)日：2008-07-10
申请号：JP2006344926
申请日：2006-12-21
申请人： Tokuyama Corp , 株式会社トクヤマ
发明人： KAITO YURIKO , KANECHIKA YUKIHIRO , AZUMA MASANOBU
IPC分类号： C04B35/581 , C04B35/58 , H01L23/15
摘要： PROBLEM TO BE SOLVED: To provide an AlN-BN composite sintered compact formed by uniformly dispersing fine BN particles in an auxiliary agent phase. SOLUTION: The aluminum nitride sintered compact comprises ≤10 wt.% auxiliary agent phase in at least a grain boundary of aluminum nitride crystal and flake like boron nitride particles having 1.0-3.0 μm average length are dispersed in the auxiliary agent phase. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供通过将BN颗粒均匀地分散在助剂相中形成的AlN-BN复合烧结体。解决方案：氮化铝烧结体在氮化铝晶体的至少晶界中含有≤10重量％的助剂相，平均长度为1.0-3.0μm的片状氮化硼颗粒分散在助剂相中。版权所有（C）2008，JPO＆INPIT

82. 发明专利

JP2008074644A Aluminum nitride sintered compact and method for producing the same 有权
标题翻译：氮化铝烧结紧凑型及其制造方法
公开(公告)号：JP2008074644A
公开(公告)日：2008-04-03
申请号：JP2006253157
申请日：2006-09-19
申请人： Tokuyama Corp , 株式会社トクヤマ
发明人： IKEDA SUSUMU , KANECHIKA YUKIHIRO , AZUMA MASANOBU
IPC分类号： C04B35/581
摘要： PROBLEM TO BE SOLVED: To provide an aluminum nitride sintered compact having a low volume resistivity, and to provide a method for producing the same. SOLUTION: The aluminum nitride comprises a mayenite phase and 500-20,000 ppm of calcium. The method for producing the aluminum nitride sintered compact comprises firing a mixture comprising 100 pts.mass of aluminum nitride and 0.01-5.0 pts.mass in terms of calcium atom of a calcium-containing sintering aid in a neutral atmosphere at 1,500-1,700°C for 50 hours or more. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供具有低体积电阻率的氮化铝烧结体，并提供其制造方法。解决方案：氮化铝包括钙铝石相和500-20,000ppm的钙。制造氮化铝烧结体的方法包括在1500-1,700℃的中性气氛中烧结含有100质量份的氮化铝和0.01-5.0质量度的含钙烧结助剂的钙原子的混合物 50小时以上版权所有（C）2008，JPO＆INPIT

83. 发明专利

JP2006272506A Method of producing polished aluminum nitride sintered compact 审中-公开
标题翻译：生产抛光的氮化铝烧结的方法
公开(公告)号：JP2006272506A
公开(公告)日：2006-10-12
申请号：JP2005095231
申请日：2005-03-29
申请人： Tokuyama Corp , 株式会社トクヤマ
发明人： YAMANE KAZUHIRO , AZUMA MASANOBU
IPC分类号： B24B1/00 , B24B7/22
摘要： PROBLEM TO BE SOLVED: To provide a method of producing a polished aluminum nitride sintered compact having a small arithmetic mean roughness Ra and a small maximum height Ry, the method contributing to shortening of a polishing time, and being sufficiently industrially practical.
SOLUTION: According to the method, when a surface of the aluminum nitride sintered compact is polished so as to set its arithmetic mean roughness Ra to 0.1 μm or less, finish polishing is carried out by means of fixed abrasive grain having a mean grain size of 1 μm or less and a concentration degree of abrasive grain of 300 to 700 mg/cm
3 .
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有较小算术平均粗糙度Ra和较小最大高度Ry的抛光氮化铝烧结体的制造方法，该方法有助于缩短抛光时间，并且在工业上具有实用性。解决方案：根据该方法，当将氮化铝烧结体的表面抛光以将其算术平均粗糙度Ra设定为0.1μm以下时，通过具有平均值的固定磨粒进行精加工粒度为1μm以下，磨粒的浓度为300〜700mg / cm 3。版权所有（C）2007，JPO＆INPIT

84. 发明专利

JP2001308355A ELECTRICAL EQUIPMENT 失效
公开(公告)号：JP2001308355A
公开(公告)日：2001-11-02
申请号：JP2000117444
申请日：2000-04-19
申请人： TOKUYAMA CORP
发明人： AZUMA MASANOBU , YAMAMOTO YASUYUKI
IPC分类号： H01L31/04
摘要： PROBLEM TO BE SOLVED: To provide electrical equipment that has a photovoltaic element and uses power generated when the photovoltaic element is irradiated with light as a heat source, light source, power source or control signal, wherein, even in a situation where only light with low intensity of, for example, 50 mW/cm2 or lower, particularly, 10 mW/cm2 or lower, can be irradiated, for example, indoors, its functions are not deteriorated and no additional components are required to secure the functions. SOLUTION: As a photovoltaic element used is a photovoltaic element including as a component a laminate wherein an n-type impurity semiconductor silicon thin film and a p-type impurity semiconductor silicon thin film are bonded via an intrinsic semiconductor silicon thin film, and at least one of those silicon thin films is a silicon thin film containing chlorine atoms at a concentration of, for example, 0.005 to 5 atom.%.

85. 发明专利

JP2001135149A ZINC OXIDE-BASED TRANSPARENT ELECTRODE 失效
公开(公告)号：JP2001135149A
公开(公告)日：2001-05-18
申请号：JP31113099
申请日：1999-11-01
申请人： TOKUYAMA CORP
发明人： AZUMA MASANOBU
IPC分类号： H01B5/14 , C23C14/08 , C23C16/40
摘要： PROBLEM TO BE SOLVED: To provide a transparent electrode using a zinc oxide-based material featured by high plasma resistance and low cost and having a reduced specific resistance and improved other characteristics including thermal oxidation resistance, as compared with a transparent electrode composed only of zinc oxide. SOLUTION: This transparent electrode comprises a zinc oxide layer containing at least two elements selected from group III of the periodic table, such as aluminum or gallium. Assuming that any specified two types of at least two elements are an additional element 1 and an additional element 2, respectively, the concentration of the additional element 1 on one surface or in the vicinity of the zinc oxide layer is higher than the concentration of the additional element 2, and the concentration of the additional element 2 on the opposite face to or in the vicinity of the zinc oxide layer is higher than the concentration of the additional element 1.

86. 发明专利

JP2000232073A POLYCRYSTALLINE SILICON FILM 失效
公开(公告)号：JP2000232073A
公开(公告)日：2000-08-22
申请号：JP20876999
申请日：1999-07-23
申请人： TOKUYAMA CORP
发明人： SHIRAI HAJIME , AZUMA MASANOBU
IPC分类号： H01L21/205 , C23C16/24 , H01L31/04
摘要： PROBLEM TO BE SOLVED: To realize a polycrystalline silicon film which does not contain an amorphous silicon phase so as to provide a photovaltaic element based on a polycrystalline silicon film having a high short-circuit current, and a method for efficiently manufacturing the polycrystalline silicon film. SOLUTION: A mixture gas, containing a chlorinated silane gas such as hydrogen and dichloro-silane and having an H/Cl ratio of 1 to 50 as a ratio of the number of hydrogen atoms to the number of chlorine atoms is used as a material gas, polycrystalline silicon is deposited on a substrate, such as a glass substrate through a plasma chemical vapor deposition method to form a polycrystalline silicon film which does not substantially contain amorphous silicon phase.

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